Abstract:
A FinFET device may include a dummy FinFET structure laterally adjacent an active FinFET structure to reduce stress imbalance and the effects of stress imbalance on the active FinFET structure. The FinFET device comprises an active FinFET comprising a plurality of semiconductor fins, and a dummy FinFET comprising a plurality of semiconductor fins. The active FinFET and the dummy FinFET are laterally spaced from each other by a spacing that is related to the fin pitch of the active FinFET.
Abstract:
An example semiconductor wafer includes a semiconductor layer, a dielectric layer disposed on the semiconductor layer, and a layer of the metal disposed on the dielectric layer. An example method of determining an effective work function of a metal on the semiconductor wafer includes determining a surface barrier voltage of the semiconductor wafer, and determining a metal effective work function of the semiconductor wafer based, at least in part, on the surface barrier voltage.
Abstract:
An interspinous stabilization device includes: (1) a supporting member with a top surface and a bottom surface both being configured to engage spinous processes; (2) two side members connected to the supporting member; (3) a fastener attached to the side members; and optionally (4) two extendable arms each secured on one of the side members.
Abstract:
A method for fabricating a semiconductor device is disclosed. A strained material is formed in a cavity of a substrate and adjacent to an isolation structure in the substrate. The strained material has a corner above the surface of the substrate. The disclosed method provides an improved method for forming the strained material adjacent to the isolation structure with an increased portion in the cavity of a substrate to enhance carrier mobility and upgrade the device performance. In an embodiment, the improved formation method is achieved using an etching process to redistribute the strained material by removing at least a portion of the corner to be located in the cavity.
Abstract:
An optoelectronic semiconductor device includes: an optoelectronic semiconductor stack including an upper surface; and a metal electrode structure formed on the optoelectronic semiconductor stack, wherein the metal electrode structure comprises a side surface including oxidized metal formed by oxidizing the metal electrode structure.
Abstract:
Thermal responsive compositions for treating bone diseases are provided. The thermal responsive composition for treating bone diseases includes a bone growth factor and a biodegradable copolymer. The biodegradable copolymer has a structure of Formula (I) or Formula (II): A-B-BOX-B-A Formula (I) B-A-B-(BOX-B-A-B)n-BOX-B-A-B Formula (II) wherein, A includes a hydrophilic polyethylene glycol polymer, B includes a hydrophobic polyester polymer, BOX is a bifunctional group monomer of 2, 2′-Bis(2-oxazoline) and used for coupling the blocks A-B or B-A-B, and n is an integer and the same or more than 0.
Abstract:
An apparatus, a system and a method are disclosed. An exemplary apparatus includes a first portion configured to hold an overlying wafer. The first portion includes a central region and an edge region circumscribing the central region. The first portion further including an upper surface and a lower surface. The apparatus further includes a second portion extending beyond an outer radius of the wafer. The second portion including an upper surface and a lower surface. The lower surface of the first portion in the central region has a first reflective characteristic. The lower surface of the first portion in the edge region and the second portion have a second reflective characteristic.
Abstract:
A fabrication method of a semiconductor structure includes providing a chip having at least an electrode pad, forming a titanium layer on the electrode pad, forming a dielectric layer on the chip and a portion of the titanium layer, forming a copper layer on the dielectric layer and the titanium layer, forming a conductive pillar on the copper layer corresponding in position to the titanium layer, and removing a portion of the copper layer that is not covered by the conductive pillar. When the portion of the copper layer is removed by etching, undercutting of the titanium layer is avoided since the titanium layer is covered by the dielectric layer, thereby providing an improved support for the conductive pillar to increase product reliability.
Abstract:
A cosmetics container includes a main body, a top cover, and a colored plate. Thus, the reflective face of the top cover co-operates with the colored plate to produce a colorful optical reflective effect, and the refractive face of the top cover produces a refractive effect, thereby enhancing the aesthetic quality of the cosmetics container so that the cosmetics container has an outstanding appearance.
Abstract:
A cosmetic powder case includes a case body having a lip wall. The lip wall has a position slot at interior side thereof and an order slot at exterior side thereof. The order slot has a locking slot thereon. A separate disk has an axial hole at central, channel portions around the axial hole, and a lock sidewall at the edge thereof which has position flange at exterior side thereof and a ring slot at interior side thereof. The ring slot has position blocks therein. A rotatable disk has an axial rod at bottom side thereof, channels located around the axial rod, and an L-shaped lock flange extended from the edge thereof. The lock flange has a ring rib at distal end of interior side thereof, and a puff has a band thereon for facilitating user to grip.