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1.发明申请公开(公告)号：US20130239993A1
公开(公告)日：2013-09-19
申请号：US13988411
申请日：2011-11-22
申请人： Yohei Ogawa , Satoru Toyoda , Yoshihiro Okamura
发明人： Yohei Ogawa , Satoru Toyoda , Yoshihiro Okamura
IPC分类号： C23C16/44
CPC分类号： C23C16/4405 , C23C16/34 , C23C16/448 , C23C16/4488
摘要： A film-forming apparatus includes a heat generator exposed to a film-forming gas drawn into a chamber to generate film formation species. A film-forming gas supply system supplies the film-forming gas into the chamber. A control unit sets the heat generator in a non-heated state during a cleaning process that discharges a film formation residue from the chamber. A cleaning gas supplying system supplies a cleaning gas including ClF3 into the chamber. A temperature adjustment unit adjusts the chamber to a target temperature from 100° C. or higher to 200° C. or less in the cleaning process. A discharge system discharges a reaction product produced by a reaction between the film formation residue and the cleaning gas from the chamber.
摘要翻译： 一种成膜装置包括一个暴露于成膜气体的热发生器，该成膜气体被吸入腔室以产生成膜物质。 成膜气体供应系统将成膜气体供应到室中。 在从腔室排出成膜残渣的清洗过程中，控制单元将发热体置于非加热状态。 清洁气体供给系统将包括ClF 3的清洁气体供应到室中。 温度调节单元在清洁过程中将室调节至目标温度为100℃以上至200℃以下。 放电系统从室内排出由成膜残渣和清洁气体之间的反应产生的反应产物。
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公开(公告)号：US20090120787A1
公开(公告)日：2009-05-14
申请号：US12352011
申请日：2009-01-12
IPC分类号： C23C14/34
CPC分类号： H01L23/53238 , C23C14/046 , C23C14/185 , H01L21/2855 , H01L21/76831 , H01L21/76844 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L21/76877 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A barrier film of a semiconductor device is formed. The present invention forms a middle layer having copper as a main component and including a predetermined quantity of diffusible metal with the addition of a reaction gas, by sputtering an alloy target having copper as a main component with the addition of a diffusible metal, while supplying a reaction gas including oxygen or nitrogen. Since contents of the diffusible metal are accurately controlled when heating the middle layer, the barrier film is certainly formed. Additionally, the reaction gas is added to the middle layer so that the reactivity of the diffusible metal becomes high; and accordingly, it is possible to form the barrier film at a heating temperature lower than the conventional art.
摘要翻译： 形成半导体器件的阻挡膜。 本发明通过溅射具有铜作为主要成分的合金靶，通过添加可扩散金属，形成以铜为主要成分并包含预定量的可扩散金属并添加反应气体的中间层，同时供给 包括氧或氮的反应气体。 由于在加热中间层时能够精确地控制可扩散金属的含量，因此肯定形成阻挡膜。 另外，将反应气体添加到中间层，使得可扩散金属的反应性变高; 因此，可以在比传统技术更低的加热温度下形成阻挡膜。
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3.发明授权Method for the formation of Co film and method for the formation of Cu interconnection film 有权形成Co膜的方法和形成Cu互连膜的方法公开(公告)号：US08809193B2
公开(公告)日：2014-08-19
申请号：US13393790
申请日：2010-09-02
IPC分类号： H01L21/44
CPC分类号： H01L23/53238 , C23C16/18 , H01L21/28556 , H01L21/28562 , H01L21/32051 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L2924/0002 , H01L2924/00
摘要： A Co film is formed by supplying cobalt alkylamidinate, and a combined gas containing H2 gas with at least one member selected from the group consisting of NH3, N2H4, NH(CH3)2, N2H3CH, and N2 as a reducing gas, or at least one gas selected from the group consisting of NH3, N2H4, NH(CH3)2, N2H3CH, and N2 as a reducing gas, on the surface of a base material, which consists of an SiO2 film or a barrier film serving as a primary layer. A Cu interconnection film is formed on the surface of the Co film.
摘要翻译： 通过提供烷基酰胺钴化合物和含有H 2气体的组合气体与选自NH 3，N 2 H 4，NH（CH 3）2，N 2 H 3 CH和N 2中的至少一种作为还原气体形成Co膜，或至少 在由SiO 2膜或作为主层的阻挡膜构成的基材的表面上，选自由NH 3，N 2 H 4，NH（CH 3）2，N 2 H 3 CH和N 2组成的组中的一种气体作为还原气体 。 在Co膜的表面上形成Cu互连膜。
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公开(公告)号：US08158198B2
公开(公告)日：2012-04-17
申请号：US11885399
申请日：2006-03-03
IPC分类号： C23C16/00
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/45525 , C23C16/45534 , C23C16/45536 , C23C16/4554 , C23C16/45553 , H01L21/28562
摘要： A tantalum nitride film-forming method comprises the steps of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms), and a halogen gas into a vacuum chamber; and reacting these components with one another on a substrate to thus form a surface adsorption film comprising a mono-atomic or multi (several)-atomic layer and composed of a compound represented by the following general formula: TaNx(Hal)y(R, R′)z (in the formula, Hal represents a halogen atom), then introducing radicals generated from an H atom-containing compound to thus remove Ta—N bonds present in the resulting compound through breakage thereof and remove, at the same time, the remaining R(R′) groups bonded to the N atoms present in the compound through the cleavage thereof and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译： 氮化钽膜形成方法包括以下步骤：引入由具有由以下通式表示的配位配体的元素钽（Ta）构成的配位化合物构成的原料气体：N =（R，R'）（式 R和R'可以相同或不同，各自表示碳原子数1〜6的烷基），卤素气体进入真空室; 并将这些组分彼此反应在基底上，从而形成包含单原子或多（多个）原子层的表面吸附膜，并由以下通式表示的化合物组成：TaNx（Hal）y（R， R'）z（式中，Hal表示卤素原子），然后引入由含H原子的化合物产生的自由基，从而通过其残留除去所得化合物中存在的Ta-N键，同时除去 剩余的R（R'）基团通过其切割而与化合物中存在的N原子键合，从而形成富含钽原子的氮化钽膜。 所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高：Ta / N可以确保足够高的附着线分布线形成膜，因此可用作阻挡膜。 此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。
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5.发明申请公开(公告)号：US20120121818A1
公开(公告)日：2012-05-17
申请号：US13386264
申请日：2010-07-21
申请人： Shuji Kodaira , Tomoyuki Yoshihama , Koukichi Kamada , Kazumasa Horita , Junichi Hamaguchi , Shigeo Nakanishi , Satoru Toyoda
发明人： Shuji Kodaira , Tomoyuki Yoshihama , Koukichi Kamada , Kazumasa Horita , Junichi Hamaguchi , Shigeo Nakanishi , Satoru Toyoda
CPC分类号： H01L21/76877 , H01L21/321 , H01L21/32131 , H01L21/76883
摘要： A coating surface processing method includes forming a coating on the entire surface of a base body that has fine holes or fine grooves formed on the to-be-filmed surface, including the inner wall surfaces and the inner bottom surfaces of the holes or the grooves, and flattening the coating formed on the inner wall surfaces of the holes or the grooves by carrying out a plasma processing on the surface of the coating.
摘要翻译： 涂布表面处理方法包括在具有形成在被成膜表面上的细孔或细槽的基体的整个表面上形成涂层，包括孔或槽的内壁表面和内底表面 并且通过在涂层的表面上进行等离子体处理来使形成在孔或槽的内壁表面上的涂层变平。
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公开(公告)号：US08105468B2
公开(公告)日：2012-01-31
申请号：US11885341
申请日：2006-03-03
CPC分类号： H01L21/76859 , C23C16/34 , H01L21/28562 , H01L21/76843
摘要： A tantalum nitride film-forming method comprises the steps of introducing, into a vacuum chamber, a raw gas consisting of a coordination compound constituted by elemental Ta having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) to thus adsorb the gas on a substrate; then introducing an NH3 gas and then activated H radicals derived from a reactant gas into a vacuum chamber to thus remove the R(R′) groups bonded to the nitrogen atom present in the reaction product through cleavage, and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译： 氮化钽膜形成方法包括以下步骤：将真空气体引入真空室中，所述原料气体由具有由以下通式表示的配位配体的元素Ta组成的配位化合物组成：N =（R，R'）（在 式R和R'可以相同或不同，各自表示碳原子数为1〜6的烷基），从而将气体吸附在基板上; 然后引入NH 3气体，然后将来自反应气体的H自由基活化到真空室中，从而通过裂解除去与反应产物中存在的氮原子键合的R（R'）基团，从而形成氮化钽膜 富含钽原子。 所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高：Ta / N可以确保足够高的附着线分布线形成膜，因此可用作阻挡膜。 此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。
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公开(公告)号：US20090246375A1
公开(公告)日：2009-10-01
申请号：US11885399
申请日：2006-03-03
IPC分类号： C23C16/00
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/45525 , C23C16/45534 , C23C16/45536 , C23C16/4554 , C23C16/45553 , H01L21/28562
摘要： A tantalum nitride film-forming method comprises the steps of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms), and a halogen gas into a vacuum chamber; and reacting these components with one another on a substrate to thus form a surface adsorption film comprising a mono-atomic or multi (several)-atomic layer and composed of a compound represented by the following general formula: TaNx(Hal)y(R, R′)z (in the formula, Hal represents a halogen atom), then introducing radicals generated from an H atom-containing compound to thus remove Ta—N bonds present in the resulting compound through breakage thereof and remove, at the same time, the remaining R(R′) groups bonded to the N atoms present in the compound through the cleavage thereof and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译： 氮化钽膜形成方法包括以下步骤：引入由具有由以下通式表示的配位配体的元素钽（Ta）构成的配位化合物构成的原料气体：N-（R，R'）（式 R和R'可以相同或不同，各自表示碳原子数1〜6的烷基），卤素气体进入真空室; 并将这些组分彼此反应在基底上，从而形成包含单原子或多（多个）原子层的表面吸附膜，并由以下通式表示的化合物组成：TaNx（Hal）y（R， R'）z（式中，Hal表示卤素原子），然后引入由含H原子的化合物产生的自由基，从而通过其残留除去所得化合物中存在的Ta-N键，同时除去 剩余的R（R'）基团通过其切割而与化合物中存在的N原子键合，从而形成富含钽原子的氮化钽膜。 所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高：Ta / N可以确保足够高的附着线分布线形成膜，因此可用作阻挡膜。 此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。
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公开(公告)号：US4816046A
公开(公告)日：1989-03-28
申请号：US182490
申请日：1988-04-18
申请人： Yoshiyasu Maeba , Satoru Toyoda , Humio Naruse
发明人： Yoshiyasu Maeba , Satoru Toyoda , Humio Naruse
CPC分类号： C23C16/4412 , B01D47/00 , C23C14/564
摘要： A particle collector trap for a vacuum evacuating system wherein there is provided a vessel formed of a double-wall cylinder and having an inlet conduit connected to a vacuum processing chamber and an outlet conduit connected to at least one vacuum pump, a passage for flowing gas is defined between the double walls of the vessel, and one of the double walls is heated and other wall is cooled so as to maintain a predetermined temperature difference therebetween.
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公开(公告)号：US20120111722A1
公开(公告)日：2012-05-10
申请号：US13383670
申请日：2010-07-15
申请人： Shuji Kodaira , Tomoyuki Yoshihama , Koukichi Kamada , Kazumasa Horita , Junichi Hamaguchi , Shigeo Nakanishi , Satoru Toyoda
发明人： Shuji Kodaira , Tomoyuki Yoshihama , Koukichi Kamada , Kazumasa Horita , Junichi Hamaguchi , Shigeo Nakanishi , Satoru Toyoda
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , H01J37/3408 , H01J37/3447 , H01L21/2855
摘要： There is provided a film forming apparatus for forming a coating film on a surface of an object to be processed by using a sputtering method, the film forming apparatus including: a chamber for accommodating the object and a target serving as a base material for the coating film that are placed so as to face each other; an exhaust unit for reducing the pressure inside the chamber; a magnetic field generating unit for generating a magnetic field in front of the sputtering surface of the target; a direct current power supply for applying a negative direct current voltage to the target; a gas introducing unit for introducing a sputtering gas into the chamber; and a unit for preventing the entering of sputtered particles onto the object until the plasma generated between the target and the object reaches a stable state.
摘要翻译： 提供了一种通过使用溅射法在待处理物体的表面上形成涂膜的成膜设备，该成膜设备包括：容纳物体的室和用作涂层的基材的靶 被放置成面对的电影; 排气单元，用于减小室内的压力; 用于在所述靶的溅射表面前方产生磁场的磁场产生单元; 用于向目标施加负的直流电压的直流电源; 气体导入单元，用于将溅射气体引入到所述室中; 以及用于防止溅射的颗粒进入物体的单元，直到在目标和物体之间产生的等离子体达到稳定状态。
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公开(公告)号：US20120103801A1
公开(公告)日：2012-05-03
申请号：US13382543
申请日：2010-07-15
申请人： Shuji Kodaira , Tomoyuki Yoshihama , Koukichi Kamada , Kazumasa Horita , Junichi Hamaguchi , Shigeo Nakanishi , Satoru Toyoda
发明人： Shuji Kodaira , Tomoyuki Yoshihama , Koukichi Kamada , Kazumasa Horita , Junichi Hamaguchi , Shigeo Nakanishi , Satoru Toyoda
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , C23C14/351 , H01L21/2855
摘要： A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section.
摘要翻译： 一种成膜装置包括：具有内部空间的室，其中被处理体和目标物都被设置成使得被处理体和目标物彼此相对;第一磁场产生部，其产生磁性 目标曝光的内部空间中的场; 产生垂直磁场的第二磁场产生部分，以允许其垂直磁力线在被处理体之间通过; 以及第三磁场产生部，设置在所述目标的上游侧，从所述第二磁场产生部观察。
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