公开(公告)号：US08158496B2

公开(公告)日：2012-04-17

申请号：US12878225

申请日：2010-09-09

申请人： Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ji-Hoon Kim

发明人： Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ji-Hoon Kim

IPC分类号： H01L21/28

CPC分类号： H01L21/0254 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02664

摘要： Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process.

摘要翻译： 提供了一种制备化合物半导体衬底的方法。 该方法包括在基板上涂覆多个球形球，在涂覆有球形球的基材上生长化合物半导体外延层，同时允许在球形球下方形成空隙，并且冷却其上化合物半导体外延层为 生长，使得衬底和化合物半导体外延层沿着空隙自我分离。 球形球处理可以减少错位几代。 此外，由于基板和化合物半导体外延层通过自分离分离，因此不需要激光剥离处理。

公开(公告)号：US07816241B2

公开(公告)日：2010-10-19

申请号：US12177917

申请日：2008-07-23

申请人： Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ji-Hoon Kim

发明人： Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ji-Hoon Kim

IPC分类号： H01L21/28

CPC分类号： H01L21/0254 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02664

摘要： Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process.

摘要翻译： 提供了一种制备化合物半导体衬底的方法。 该方法包括在基板上涂覆多个球形球，在涂覆有球形球的基材上生长化合物半导体外延层，同时允许在球形球下方形成空隙，并且冷却其上化合物半导体外延层为 生长，使得衬底和化合物半导体外延层沿着空隙自我分离。 球形球处理可以减少错位几代。 此外，由于基板和化合物半导体外延层通过自分离分离，因此不需要激光剥离处理。

公开(公告)号：US07708832B2

公开(公告)日：2010-05-04

申请号：US12177490

申请日：2008-07-22

申请人： Yong-Jin Kim ,  Ji-Hoon Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee

发明人： Yong-Jin Kim ,  Ji-Hoon Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee

IPC分类号： C30B25/00 ,  C30B28/12 ,  H01L21/28

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18

摘要： Provided is a method for preparing a substrate for growing gallium nitride and a gallium nitride substrate. The method includes performing thermal cleaning on a surface of a silicon substrate, forming a silicon nitride (Si3N4) micro-mask on the surface of the silicon substrate in an in situ manner, and growing a gallium nitride layer through epitaxial lateral overgrowth (ELO) using an opening in the micro-mask. According to the method, by improving the typical ELO, it is possible to simplify the method for preparing the substrate for growing gallium nitride and the gallium nitride substrate and reduce process cost.

摘要翻译： 提供一种制备用于生长氮化镓和氮化镓衬底的衬底的方法。 该方法包括在硅衬底的表面上进行热清洗，以原位方式在硅衬底的表面上形成氮化硅（Si 3 N 4）微掩模，并通过外延横向过度生长（ELO）生长氮化镓层， 在微面罩中使用开口。 根据该方法，通过改善典型的ELO，可以简化制备用于生长氮化镓和氮化镓衬底的衬底的方法，并降低工艺成本。

公开(公告)号：US08158501B2

公开(公告)日：2012-04-17

申请号：US12967897

申请日：2010-12-14

申请人： Yong-Jin Kim ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Dong-Kun Lee

发明人： Yong-Jin Kim ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Dong-Kun Lee

IPC分类号： H01L21/02

CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/20 ,  H01L33/38

摘要： The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.

摘要翻译： 化合物半导体基板及其制造方法技术领域本发明涉及化合物半导体基板及其制造方法。 本发明提供一种制造方法，其在基板上涂布球形球，在球形球之间形成金属层，去除球形球以形成开口，并从开口生长化合物半导体层。 根据本发明，与传统的ELO（外延横向生长）方法或在金属上形成化合物半导体层的方法相比，可以简化和简单且廉价地生产高质量的化合物半导体层 层。 并且，金属层用作发光器件和光反射膜的一个电极，以提供具有降低的功率消耗和高发光效率的发光器件。

公开(公告)号：US20130178050A1

公开(公告)日：2013-07-11

申请号：US13714240

申请日：2012-12-13

申请人： Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

发明人： Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

IPC分类号： H01L21/02

CPC分类号： H01L21/302 ,  C30B25/186 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02664

摘要： A method for manufacturing a gallium nitride (GaN) wafer is provided. In the method for manufacturing the GaN wafer according to an embodiment, an etch stop layer is formed on a substrate, and a first GaN layer is formed on the etch stop layer. A portion of the first GaN layer is etched with a silane gas, and a second GaN layer is formed on the etched first GaN layer. A third GaN layer is formed on the second GaN layer.

摘要翻译： 提供了一种制造氮化镓（GaN）晶片的方法。 在根据实施例的制造GaN晶片的方法中，在衬底上形成蚀刻停止层，并且在蚀刻停止层上形成第一GaN层。 用硅烷气蚀刻第一GaN层的一部分，在蚀刻的第一GaN层上形成第二GaN层。 在第二GaN层上形成第三GaN层。

公开(公告)号：US08354289B2

公开(公告)日：2013-01-15

申请号：US13019146

申请日：2011-02-01

申请人： Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

发明人： Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

IPC分类号： H01L33/20 ,  H01L33/22

CPC分类号： H01L21/302 ,  C30B25/186 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02664

摘要： A method for manufacturing a gallium nitride (GaN) wafer is provided. In the method for manufacturing the GaN wafer according to an embodiment, an etch stop layer is formed on a substrate, and a first GaN layer is formed on the etch stop layer. A portion of the first GaN layer is etched with a silane gas, and a second GaN layer is formed on the etched first GaN layer. A third GaN layer is formed on the second GaN layer.

公开(公告)号：US08198649B2

公开(公告)日：2012-06-12

申请号：US11982716

申请日：2007-11-02

申请人： Yong-Jin Kim ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Dong-Kun Lee

发明人： Yong-Jin Kim ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Dong-Kun Lee

IPC分类号： H01L33/20

CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/20 ,  H01L33/38

摘要： The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.

摘要翻译： 化合物半导体基板及其制造方法技术领域本发明涉及化合物半导体基板及其制造方法。 本发明提供一种制造方法，其在基板上涂布球形球，在球形球之间形成金属层，去除球形球以形成开口，并从开口生长化合物半导体层。 根据本发明，与传统的ELO（外延横向生长）方法或在金属上形成化合物半导体层的方法相比，可以简化和简单且廉价地生产高质量的化合物半导体层 层。 并且，金属层用作发光器件和光反射膜的一个电极，以提供具有降低的功率消耗和高发光效率的发光器件。

公开(公告)号：US20110143525A1

公开(公告)日：2011-06-16

申请号：US13031425

申请日：2011-02-21

申请人： Doo-Soo Kim ,  Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee

发明人： Doo-Soo Kim ,  Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee

IPC分类号： H01L21/365

CPC分类号： H01L21/02658 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/0254

摘要： The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses applied larger when growing a nitride semiconductor film on the base substrate from a central portion of the base substrate towards a peripheral portion. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.

摘要翻译： 氮化镓半导体衬底及其制造方法技术领域本发明涉及氮化镓衬底等氮化物半导体衬底及其制造方法。 本发明在基底基板的下表面上形成多个沟槽，该多个沟槽被配置为当从基底基板的中心部朝向周边部分生长氮化物半导体膜时吸收或减小施加更大的应力。 也就是说，本发明在基底基板的下表面上形成沟槽，使得间距变得较小，或者宽度或深度从基底基板的中心部朝向周边部分变大。

公开(公告)号：US07723217B2

公开(公告)日：2010-05-25

申请号：US12332198

申请日：2008-12-10

申请人： Ho-Jun Lee ,  Doo-Soo Kim ,  Dong-Kun Lee ,  Yong-Jin Kim

发明人： Ho-Jun Lee ,  Doo-Soo Kim ,  Dong-Kun Lee ,  Yong-Jin Kim

IPC分类号： H01L21/20

CPC分类号： C30B29/406 ,  C30B25/18

摘要： The present invention relates to a method for manufacturing a gallium nitride single crystalline substrate, including (a) growing a gallium nitride film on a flat base substrate made of a material having a smaller coefficient of thermal expansion than gallium nitride and cooling the gallium nitride film to bend convex upwards the base substrate and the gallium nitride film and create cracks in the gallium nitride film; (b) growing a gallium nitride single crystalline layer on the crack-created gallium nitride film located on the convex upward base substrate; and (c) cooling a resultant product having the grown gallium nitride single crystalline layer to make the convex upward resultant product flat or bend convex downwards the convex upward resultant product and at the same time to self-split the base substrate and the gallium nitride single crystalline layer from each other at the crack-created gallium nitride film interposed therebetween.

摘要翻译： 本发明涉及一种用于制造氮化镓单晶衬底的方法，包括（a）在具有比氮化镓更小的热膨胀系数的材料制成的平坦基底衬底上生长氮化镓膜并冷却氮化镓膜 使基底和氮化镓膜向上弯曲并在氮化镓膜中产生裂纹; （b）在位于凸起的上方的基底基板上的裂纹产生的氮化镓膜上生长氮化镓单晶层; 和（c）冷却具有生长的氮化镓单晶层的所得产物，以使凸起的上升产物平坦或向上凸起向上凸起的产生产物，同时使基底和氮化镓单层自分裂 在其间形成的裂纹产生的氮化镓膜彼此相互结合。

公开(公告)号：US20110129953A1

公开(公告)日：2011-06-02

申请号：US12955222

申请日：2010-11-29

申请人： Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

发明人： Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

IPC分类号： H01L33/32 ,  H01L21/20

CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0079

摘要： A method of manufacturing a nitride semiconductor device is disclosed. The method includes forming a gallium nitride (GaN) epitaxial layer on a first support substrate, forming a second support substrate on the GaN epitaxial layer, forming a passivation layer on a surface of the other region except for the first support substrate, etching the first support substrate by using the passivation layer as a mask, and removing the passivation layer and thereby exposing the second support substrate and the GaN epitaxial layer.

摘要翻译： 公开了一种制造氮化物半导体器件的方法。 该方法包括在第一支撑衬底上形成氮化镓（GaN）外延层，在GaN外延层上形成第二支撑衬底，在除第一支撑衬底之外的另一个区域的表面上形成钝化层，蚀刻第一衬底 通过使用钝化层作为掩模来支撑衬底，以及去除钝化层，从而暴露第二支撑衬底和GaN外延层。