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    Method of chemical mechanical polishing with high throughput and low dishing
    3.
    发明授权
    Method of chemical mechanical polishing with high throughput and low dishing 失效
    化学机械抛光方法，具有高通量和低凹陷

    公开(公告)号：US07232761B2

    公开(公告)日：2007-06-19

    申请号：US10924417

    申请日：2004-08-24

    申请人： Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  David Mai ,  Fred C. Redeker

    发明人： Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  David Mai ,  Fred C. Redeker

    IPC分类号： H01L21/461

    CPC分类号： H01L21/3212 ,  B24B37/042 ,  B24B37/30 ,  H01L21/7684

    摘要： Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.

    摘要翻译： 提供了用于抛光导电材料的方法和装置，其具有低的特征凹陷和减少的或最小的剩余残余物。 在一个方面，提供了一种通过抛光衬底以去除体导电材料并通过载体头部旋转速度与平板旋转速度的比率在约2:1至约3:1之间来抛光衬底来进行衬底处理的方法，以去除 残留导电材料。 在另一方面，提供了一种用于处理衬底的方法，包括在衬底的中心以约600mm /秒至约1900mm /秒的第一相对线速度抛光衬底，并以第二相对线性 在衬底的中心处的速度在约100mm /秒到约550mm /秒之间。

    Method of chemical mechanical polishing with high throughput and low dishing
    4.
    发明授权
    Method of chemical mechanical polishing with high throughput and low dishing 失效
    化学机械抛光方法，具有高通量和低凹陷

    公开(公告)号：US06780773B2

    公开(公告)日：2004-08-24

    申请号：US10193469

    申请日：2002-07-11

    申请人： Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  David Mai ,  Fred C. Redeker

    发明人： Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  David Mai ,  Fred C. Redeker

    IPC分类号： H01L21641

    CPC分类号： H01L21/3212 ,  B24B37/042 ,  B24B37/30 ,  H01L21/7684

    摘要： Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.

    摘要翻译： 提供了用于抛光导电材料的方法和装置，其具有低的特征凹陷和减少的或最小的剩余残余物。 在一个方面，提供了一种通过抛光衬底以去除体导电材料并通过载体头部旋转速度与平板旋转速度的比率在约2:1至约3:1之间来抛光衬底来进行衬底处理的方法，以去除 残留导电材料。 在另一方面，提供了一种用于处理衬底的方法，包括在衬底的中心以约600mm /秒至约1900mm /秒的第一相对线速度抛光衬底，并以第二相对线性 在衬底的中心处的速度在约100mm /秒到约550mm /秒之间。

    Temperature control in a chemical mechanical polishing system
    5.
    发明授权
    Temperature control in a chemical mechanical polishing system 有权
    化学机械抛光系统中的温度控制

    公开(公告)号：US07153188B1

    公开(公告)日：2006-12-26

    申请号：US11245558

    申请日：2005-10-07

    申请人： Steven M. Zuniga ,  Hung Chih Chen ,  Stan D. Tsai ,  Kapila Wijekoon ,  Fred C. Redeker ,  Rajeev Bajaj

    发明人： Steven M. Zuniga ,  Hung Chih Chen ,  Stan D. Tsai ,  Kapila Wijekoon ,  Fred C. Redeker ,  Rajeev Bajaj

    IPC分类号： B24B49/00

    CPC分类号： B24B37/015

    摘要： The carrier head has a base and a substrate backing structure for holding a substrate against a polishing surface during polishing. The substrate backing structure is connected to the base and includes an external surface that contacts a backside of the substrate during polishing. The substrate backing structure also includes a resistive heating system to distribute heat over an area of the external surface and at least one thermally conductive membrane. The external surface is a first surface of the at least one thermally conductive membrane, and the resistive heating system is integrated within one of the at least one thermally conductive membrane.

    摘要翻译： 承载头具有底座和衬底背衬结构，用于在抛光期间将衬底保持在抛光表面上。 衬底背衬结构连接到基底并且包括在抛光期间接触衬底背面的外表面。 衬底背衬结构还包括电阻加热系统以在外表面的区域和至少一个导热膜上分配热量。 所述外表面是所述至少一个导热膜的第一表面，并且所述电阻加热系统集成在所述至少一个导热膜之一内。

    Method and apparatus for enhanced CMP using metals having reductive properties
    6.
    发明授权
    Method and apparatus for enhanced CMP using metals having reductive properties 失效

    公开(公告)号：US06537144B1

    公开(公告)日：2003-03-25

    申请号：US09505899

    申请日：2000-02-17

    申请人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

    发明人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

    IPC分类号： B24D1100

    CPC分类号： B24B37/26 ,  B24B53/017 ,  H01L21/3212

    摘要： Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

    Method and apparatus for hard pad polishing
    8.
    发明授权
    Method and apparatus for hard pad polishing 失效

    公开(公告)号：US06620027B2

    公开(公告)日：2003-09-16

    申请号：US10044379

    申请日：2002-01-09

    申请人： Ajoy Zutshi ,  Rajeev Bajaj ,  Fred C. Redeker ,  Yutao Ma ,  Kapila Wijekoon

    发明人： Ajoy Zutshi ,  Rajeev Bajaj ,  Fred C. Redeker ,  Yutao Ma ,  Kapila Wijekoon

    IPC分类号： B24B5100

    CPC分类号： B24B37/12 ,  B24B37/042 ,  B24B37/24

    摘要： Methods and apparatus for planarizing a substrate surface having copper containing materials thereon is provided. In one aspect, the invention provides a system for processing substrates comprising a first platen adapted for polishing a substrate with a hard polishing pad disposed on the first platen, a second platen adapted for polishing a substrate with a hard polishing pad disposed on the second platen, and a third platen adapted for polishing a substrate with a hard polishing pad disposed on the third platen. In another aspect, the invention provides a method for planarizing a substrate surface by the system described above including substantially removing bulk copper containing materials on the first platen, removing residual copper containing materials on the second platen, and then removing a barrier layer on the third platen. A computer readable program may also be provided for performing the methods described herein.

    Method and apparatus for enhanced CMP using metals having reductive properties
    9.
    发明授权
    Method and apparatus for enhanced CMP using metals having reductive properties 失效

    公开(公告)号：US06561873B2

    公开(公告)日：2003-05-13

    申请号：US10093897

    申请日：2002-03-08

    申请人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

    发明人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

    IPC分类号： B24B100

    CPC分类号： B24B37/26 ,  B24B53/017 ,  H01L21/3212

    摘要： Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

    Additives for pressure sensitive polishing compositions
    10.
    发明授权
    Additives for pressure sensitive polishing compositions 失效
    用于压敏抛光组合物的添加剂

    公开(公告)号：US06783432B2

    公开(公告)日：2004-08-31

    申请号：US09874177

    申请日：2001-06-04

    申请人： Jui-Lung Li ,  Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

    发明人： Jui-Lung Li ,  Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

    IPC分类号： B24B100

    CPC分类号： B24B37/0056 ,  B24B37/044 ,  C09G1/02

    摘要： A method and composition for planarizing a substrate. The composition includes a pressure sensitive solution and one or more chemical agents for complexing with a metal or oxidized metal. The method for removal of a copper containing layer from a substrate surface, comprising applying a composition to a polishing media, the composition comprising a pressure sensitive solution, and one or more chemical agents for complexing with a metal or oxidized metal, and polishing the substrate surface with the polishing media.

    摘要翻译： 一种用于平坦化衬底的方法和组合物。 组合物包括压敏溶液和用于与金属或氧化金属络合的一种或多种化学试剂。 一种从基材表面除去含铜层的方法，包括将组合物施用于抛光介质，所述组合物包含压敏溶液，以及一种或多种与金属或氧化金属络合的化学试剂，以及研磨该基材 表面与抛光介质。