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    Method of chemical mechanical polishing with high throughput and low dishing
    4.
    发明授权
    Method of chemical mechanical polishing with high throughput and low dishing 失效
    化学机械抛光方法，具有高通量和低凹陷

    公开(公告)号：US07232761B2

    公开(公告)日：2007-06-19

    申请号：US10924417

    申请日：2004-08-24

    申请人： Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  David Mai ,  Fred C. Redeker

    发明人： Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  David Mai ,  Fred C. Redeker

    IPC分类号： H01L21/461

    CPC分类号： H01L21/3212 ,  B24B37/042 ,  B24B37/30 ,  H01L21/7684

    摘要： Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.

    摘要翻译： 提供了用于抛光导电材料的方法和装置，其具有低的特征凹陷和减少的或最小的剩余残余物。 在一个方面，提供了一种通过抛光衬底以去除体导电材料并通过载体头部旋转速度与平板旋转速度的比率在约2:1至约3:1之间来抛光衬底来进行衬底处理的方法，以去除 残留导电材料。 在另一方面，提供了一种用于处理衬底的方法，包括在衬底的中心以约600mm /秒至约1900mm /秒的第一相对线速度抛光衬底，并以第二相对线性 在衬底的中心处的速度在约100mm /秒到约550mm /秒之间。

    Method of chemical mechanical polishing with high throughput and low dishing
    5.
    发明授权
    Method of chemical mechanical polishing with high throughput and low dishing 失效
    化学机械抛光方法，具有高通量和低凹陷

    公开(公告)号：US06780773B2

    公开(公告)日：2004-08-24

    申请号：US10193469

    申请日：2002-07-11

    申请人： Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  David Mai ,  Fred C. Redeker

    发明人： Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  David Mai ,  Fred C. Redeker

    IPC分类号： H01L21641

    CPC分类号： H01L21/3212 ,  B24B37/042 ,  B24B37/30 ,  H01L21/7684

    摘要： Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.

    摘要翻译： 提供了用于抛光导电材料的方法和装置，其具有低的特征凹陷和减少的或最小的剩余残余物。 在一个方面，提供了一种通过抛光衬底以去除体导电材料并通过载体头部旋转速度与平板旋转速度的比率在约2:1至约3:1之间来抛光衬底来进行衬底处理的方法，以去除 残留导电材料。 在另一方面，提供了一种用于处理衬底的方法，包括在衬底的中心以约600mm /秒至约1900mm /秒的第一相对线速度抛光衬底，并以第二相对线性 在衬底的中心处的速度在约100mm /秒到约550mm /秒之间。

    Method of chemical mechanical polishing with high throughput and low dishing
    6.
    发明申请
    Method of chemical mechanical polishing with high throughput and low dishing 失效
    化学机械抛光方法，具有高通量和低凹陷

    公开(公告)号：US20050026442A1

    公开(公告)日：2005-02-03

    申请号：US10924417

    申请日：2004-08-24

    申请人： Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  David Mai ,  Fred Redeker

    发明人： Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  David Mai ,  Fred Redeker

    IPC分类号： B24B1/00 ,  B24B5/00 ,  B24B29/00 ,  B24B37/04 ,  C23F1/00 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768 ,  H01L21/302 ,  H01L21/44

    CPC分类号： H01L21/3212 ,  B24B37/042 ,  B24B37/30 ,  H01L21/7684

    摘要： Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.

    摘要翻译： 提供了用于抛光导电材料的方法和装置，其具有低的特征凹陷和减少的或最小的剩余残余物。 在一个方面，提供了一种通过抛光衬底以去除体导电材料并通过载体头部旋转速度与平板旋转速度的比率在约2:1至约3:1之间来抛光衬底来进行衬底处理的方法，以去除 残留导电材料。 在另一方面，提供了一种用于处理衬底的方法，包括在衬底的中心以约600mm /秒至约1900mm /秒的第一相对线速度抛光衬底，并以第二相对线性 在衬底的中心处的速度在约100mm /秒到约550mm /秒之间。

    Chemical mechanical polishing composition and process
    7.
    发明授权
    Chemical mechanical polishing composition and process 失效
    化学机械抛光组合物和工艺

    公开(公告)号：US06872329B2

    公开(公告)日：2005-03-29

    申请号：US09842476

    申请日：2001-04-25

    申请人： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker ,  Shijian Li

    发明人： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker ,  Shijian Li

    IPC分类号： B24B37/04 ,  C09G1/02 ,  H01L21/321 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  H01L21/302

    CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/02

    摘要： A method and composition for planarizing a substrate surface is provided. The polishing composition includes an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal and a stabilizer such as a stannate salt. The composition may further include abrasive particles and/or inhibitors. The composition may be used in a multi-step polishing process including polishing a substrate surface to selectively remove a metal layer with respect to a barrier layer and dielectric layer and polishing a substrate surface using the composition to non-selectively remove the metal layer, a barrier layer, and a dielectric layer from the substrate surface.

    摘要翻译： 提供了用于平坦化基板表面的方法和组合物。 抛光组合物包括能够氧化经历平坦化的金属并产生与氧化金属络合的络合剂和稳定剂如锡酸盐的氧化剂。 组合物还可以包括研磨颗粒和/或抑制剂。 组合物可以用于多步抛光工艺中，包括抛光衬底表面以相对于阻挡层和电介质层选择性去除金属层，并使用该组合物抛光衬底表面以非选择性地去除金属层， 阻挡层和介电层。

    Pad cleaning for a CMP system
    8.
    发明授权
    Pad cleaning for a CMP system 失效
    CMP系统的垫清洁

    公开(公告)号：US06669538B2

    公开(公告)日：2003-12-30

    申请号：US09512745

    申请日：2000-02-24

    申请人： Shijian Li ,  Ramin Emami ,  Sen-Hou Ko ,  Shi-Ping Wang ,  Fred C. Redeker ,  Lizhong Sun ,  Stan Tsai

    发明人： Shijian Li ,  Ramin Emami ,  Sen-Hou Ko ,  Shi-Ping Wang ,  Fred C. Redeker ,  Lizhong Sun ,  Stan Tsai

    IPC分类号： B24B100

    CPC分类号： B24B53/017

    摘要： The present invention generally provides a system and apparatus for cleaning a polishing pad, such as a fixed abrasive pad, in a substrate processing system. In one embodiment, the system includes one or more nozzles which spray a fluid at pressures of about 30 psi to about 300 psi or greater, as measured at the nozzle, onto a polishing pad at acute angles to the surface of the polishing pad. The nozzles can spray downward and outward toward the perimeter of the pad to facilitate the debris removal therefrom. The system can include a pressure source to produce a sufficient fluid pressure substantially higher than the typical fluid pressure available from a facility installation.

    摘要翻译： 本发明通常提供一种用于在衬底处理系统中清洁抛光垫，例如固定研磨垫的系统和装置。 在一个实施例中，该系统包括一个或多个喷嘴，其以在喷嘴处测量的约30psi至约300psi或更大的压力喷射流体至抛光垫的表面的锐角处的抛光垫上。 喷嘴可以朝向垫的周边向下和向外喷射以便于从其中移除碎片。 该系统可以包括压力源以产生足够的流体压力，该流体压力显着高于可从设施设施获得的典型流体压力。

    Cu CMP polishing pad cleaning
    9.
    发明授权
    Cu CMP polishing pad cleaning 失效
    Cu CMP抛光垫清洗

    公开(公告)号：US07220322B1

    公开(公告)日：2007-05-22

    申请号：US09645690

    申请日：2000-08-24

    申请人： Lizhong Sun ,  Shijian Li ,  Fred C. Redeker

    发明人： Lizhong Sun ,  Shijian Li ,  Fred C. Redeker

    IPC分类号： B08B7/04 ,  H01L21/302

    CPC分类号： B24B53/017

    摘要： A polishing pad is cleaned of Cu CMP by-products, subsequent to planarizing a wafer, to reduce pad-glazing by applying to the polishing pad surface a composition comprising about 0.1 to about 3.0 wt. % of at least one organic compound having one or more amine or amide groups, an acid or a base in an amount sufficient to adjust the pH of the composition to about 5.0 to about 12.0, the remainder water. Embodiments comprise ex situ cleaning of a rotating polishing pad by applying a solution having a pH of about 5.0 to about 12.0 at a flow rate of about 100 to about 600 ml/min. for about 3 to about 20 seconds after polishing a wafer having a Cu-containing surface and then removing the cleaning solution from the polishing pad by high pressure rinsing with water.

    摘要翻译： 在平坦化晶片之后，将抛光垫清除为Cu CMP副产物，通过向抛光垫表面施加包含约0.1至约3.0重量％的组合物的组合物来减少垫玻璃。 ％的至少一种具有一个或多个胺或酰胺基团的有机化合物，酸或碱的量足以将组合物的pH调节至约5.0至约12.0，其余为水。 实施例包括通过以约100至约600ml / min的流速施加pH为约5.0至约12.0的溶液来旋转抛光垫的原位清洁。 在研磨具有含Cu表面的晶片之后约3至约20秒，然后通过用水高压冲洗从抛光垫除去清洁溶液。