公开(公告)号：US20080128721A1

公开(公告)日：2008-06-05

申请号：US11873763

申请日：2007-10-17

申请人： Yoshiaki Watanabe ,  Tomonori Hino ,  Nobukata Okano ,  Hisayoshi Kuramochi ,  Yuichiro Kikuchi ,  Tatsuo Ohashi

发明人： Yoshiaki Watanabe ,  Tomonori Hino ,  Nobukata Okano ,  Hisayoshi Kuramochi ,  Yuichiro Kikuchi ,  Tatsuo Ohashi

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/38

摘要： Herein disclosed a method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.

摘要翻译： 本文公开了一种制造发光器件的方法，包括以下步骤：（A）顺序地形成第一导电类型的第一化合物半导体层，有源层和与所述第二导电类型不同的第二化合物半导体层 第一导电类型，在基板上; 和（B）暴露所述第一化合物半导体层的一部分，在所述第一化合物半导体层的所述暴露部分上形成第一电极，并在所述第二化合物半导体层上形成第二电极，其中所述方法还包括，在所述步骤 （B）中，步骤：（C）至少覆盖所述第一化合物半导体层的所述暴露部分，所述有源层的暴露部分，所述第二化合物半导体层的暴露部分和所述第二电极的一部分， SOG层。

公开(公告)号：US20110068363A1

公开(公告)日：2011-03-24

申请号：US12957908

申请日：2010-12-01

申请人： Yoshiaki Watanabe ,  Tomonori Hino ,  Nobukata Okano ,  Hisayoshi Kuramochi ,  Yuichiro Kikuchi ,  Tatsuo Ohashi

发明人： Yoshiaki Watanabe ,  Tomonori Hino ,  Nobukata Okano ,  Hisayoshi Kuramochi ,  Yuichiro Kikuchi ,  Tatsuo Ohashi

IPC分类号： H01L33/52

CPC分类号： H01L33/44 ,  H01L33/38

摘要： A method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.

摘要翻译： 一种制造发光器件的方法，包括以下步骤：（A）顺序地形成第一导电类型的第一化合物半导体层，有源层和与所述第一导电不同的第二导电类型的第二化合物半导体层 类型，在基底上; 和（B）暴露所述第一化合物半导体层的一部分，在所述第一化合物半导体层的所述暴露部分上形成第一电极，并在所述第二化合物半导体层上形成第二电极，其中所述方法还包括，在所述步骤 （B）中，步骤：（C）至少覆盖所述第一化合物半导体层的所述暴露部分，所述有源层的暴露部分，所述第二化合物半导体层的暴露部分和所述第二电极的一部分， SOG层。

公开(公告)号：US08217407B2

公开(公告)日：2012-07-10

申请号：US12957908

申请日：2010-12-01

申请人： Yoshiaki Watanabe ,  Tomonori Hino ,  Nobukata Okano ,  Hisayoshi Kuramochi ,  Yuichiro Kikuchi ,  Tatsuo Ohashi

发明人： Yoshiaki Watanabe ,  Tomonori Hino ,  Nobukata Okano ,  Hisayoshi Kuramochi ,  Yuichiro Kikuchi ,  Tatsuo Ohashi

IPC分类号： H01L21/00

CPC分类号： H01L33/44 ,  H01L33/38

摘要： A method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.

摘要翻译： 一种制造发光器件的方法，包括以下步骤：（A）顺序地形成第一导电类型的第一化合物半导体层，有源层和与所述第一导电不同的第二导电类型的第二化合物半导体层 类型，在基底上; 和（B）暴露所述第一化合物半导体层的一部分，在所述第一化合物半导体层的所述暴露部分上形成第一电极，并在所述第二化合物半导体层上形成第二电极，其中所述方法还包括，在所述步骤 （B）中，步骤：（C）至少覆盖所述第一化合物半导体层的所述暴露部分，所述有源层的暴露部分，所述第二化合物半导体层的暴露部分和所述第二电极的一部分， SOG层。

公开(公告)号：US07858418B2

公开(公告)日：2010-12-28

申请号：US11873763

申请日：2007-10-17

申请人： Yoshiaki Watanabe ,  Tomonori Hino ,  Nobukata Okano ,  Hisayoshi Kuramochi ,  Yuichiro Kikuchi ,  Tatsuo Ohashi

发明人： Yoshiaki Watanabe ,  Tomonori Hino ,  Nobukata Okano ,  Hisayoshi Kuramochi ,  Yuichiro Kikuchi ,  Tatsuo Ohashi

IPC分类号： H01L21/00

CPC分类号： H01L33/44 ,  H01L33/38

摘要： Herein disclosed a method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.

摘要翻译： 本文公开了一种制造发光器件的方法，包括以下步骤：（A）顺序地形成第一导电类型的第一化合物半导体层，有源层和与所述第二导电类型不同的第二化合物半导体层 第一导电类型，在基板上; 和（B）暴露所述第一化合物半导体层的一部分，在所述第一化合物半导体层的所述暴露部分上形成第一电极，并在所述第二化合物半导体层上形成第二电极，其中所述方法还包括，在所述步骤 （B）中，步骤：（C）至少覆盖所述第一化合物半导体层的所述暴露部分，所述有源层的暴露部分，所述第二化合物半导体层的暴露部分和所述第二电极的一部分， SOG层。

公开(公告)号：US08575643B2

公开(公告)日：2013-11-05

申请号：US11876909

申请日：2007-10-23

申请人： Yoshiaki Watanabe ,  Tomonori Hino ,  Nobukata Okano ,  Hisayoshi Kuramochi ,  Tatsuo Ohashi

发明人： Yoshiaki Watanabe ,  Tomonori Hino ,  Nobukata Okano ,  Hisayoshi Kuramochi ,  Tatsuo Ohashi

IPC分类号： H01L33/00

CPC分类号： H01L27/15 ,  H01L24/45 ,  H01L33/62 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting device includes a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a second electrode formed on the second compound semiconductor layer; an insulating layer covering the second electrode; a first opening provided to pass through the insulating layer, the second electrode, the second compound semiconductor layer, and the active layer; a second opening provided to pass through the insulating layer; a first electrode formed on an exposed portion of the first compound semiconductor layer at the bottom of the first opening; a first electrode extension extending from the first electrode to the insulating layer through the first opening and a first pad portion including a portion of the first electrode extension on the insulating layer; and a second pad portion connected to an exposed portion of the second electrode at the bottom of the second opening.

摘要翻译： 发光器件包括第一化合物半导体层，有源层和第二化合物半导体层; 形成在第二化合物半导体层上的第二电极; 覆盖所述第二电极的绝缘层; 设置成穿过绝缘层，第二电极，第二化合物半导体层和有源层的第一开口; 设置成穿过绝缘层的第二开口; 形成在第一开口底部的第一化合物半导体层的露出部分上的第一电极; 通过所述第一开口从所述第一电极延伸到所述绝缘层的第一电极延伸部和包括所述绝缘层上的所述第一电极延伸部的一部分的第一焊盘部分; 以及第二焊盘部分，其连接到第二开口的底部处的第二电极的暴露部分。

公开(公告)号：US20080105885A1

公开(公告)日：2008-05-08

申请号：US11876909

申请日：2007-10-23

申请人： Yoshiaki Watanabe ,  Tomonori Hino ,  Nobukata Okano ,  Hisayoshi Kuramochi ,  Tatsuo Ohashi

发明人： Yoshiaki Watanabe ,  Tomonori Hino ,  Nobukata Okano ,  Hisayoshi Kuramochi ,  Tatsuo Ohashi

IPC分类号： H01L33/00

CPC分类号： H01L27/15 ,  H01L24/45 ,  H01L33/62 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting device includes a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a second electrode formed on the second compound semiconductor layer; an insulating layer covering the second electrode; a first opening provided to pass through the insulating layer, the second electrode, the second compound semiconductor layer, and the active layer; a second opening provided to pass through the insulating layer; a first electrode formed on an exposed portion of the first compound semiconductor layer at the bottom of the first opening; a first electrode extension extending from the first electrode to the insulating layer through the first opening and a first pad portion including a portion of the first electrode extension on the insulating layer; and a second pad portion connected to an exposed portion of the second electrode at the bottom of the second opening.

摘要翻译： 发光器件包括第一化合物半导体层，有源层和第二化合物半导体层; 形成在第二化合物半导体层上的第二电极; 覆盖所述第二电极的绝缘层; 设置成穿过绝缘层，第二电极，第二化合物半导体层和有源层的第一开口; 设置成穿过绝缘层的第二开口; 形成在第一开口底部的第一化合物半导体层的露出部分上的第一电极; 通过所述第一开口从所述第一电极延伸到所述绝缘层的第一电极延伸部和包括所述绝缘层上的所述第一电极延伸部的一部分的第一焊盘部分; 以及第二焊盘部分，其连接到第二开口的底部处的第二电极的暴露部分。

公开(公告)号：US20050002673A1

公开(公告)日：2005-01-06

申请号：US10809432

申请日：2004-03-26

申请人： Nobukata Okano ,  Yoshiaki Watanabe ,  Jugo Mitomo ,  Tomonori Hino ,  Hironobu Narui

发明人： Nobukata Okano ,  Yoshiaki Watanabe ,  Jugo Mitomo ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H04B10/11 ,  H04B10/112 ,  H04B10/00

CPC分类号： H04B10/1149 ,  H04B10/116

摘要： An optical-information transmitting, lighting apparatus 2 is installed in a place where a lighting apparatus of the existing type for applying light generally used is provided. The lighting apparatus 2 comprises an illumination light source 4 for applying light and an information-transmitting unit 5 for transmitting optical information. A person who may receive information from the lighting apparatus 2 has a mobile terminal 3, which receives the optical information transmitted from the information-transmitting unit 5. Since the lighting apparatus of the existing type is widely used in our living space. Hence, the optical-information transmitting, lighting apparatus 2 can convert every place where an existing type lighting apparatus is used, into an optical communications space.

摘要翻译： 光信息传送照明装置2设置在通常使用的现有照明装置的场合。 照明装置2包括用于施加光的照明光源4和用于发送光学信息的信息发送单元5。 可以从照明装置2接收信息的人员具有接收从信息发送单元5发送的光学信息的移动终端3.由于现有类型的照明装置被广泛地用于我们的生活空间。 因此，光信息发送照明装置2能够将现有的照明装置的各个地方变换为光通信空间。

公开(公告)号：US20110249975A1

公开(公告)日：2011-10-13

申请号：US13067608

申请日：2011-06-14

申请人： Nobukata Okano ,  Yoshiaki Watanabe ,  Jugo Mitomo ,  Tomonori Hino ,  Hironobu Narui

发明人： Nobukata Okano ,  Yoshiaki Watanabe ,  Jugo Mitomo ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H04B10/02 ,  H04B10/00

CPC分类号： H04B10/1149 ,  H04B10/116

摘要： An optical-information transmitting, lighting apparatus 2 is installed in a place where a lighting apparatus of the existing type for applying light generally used is provided. The lighting apparatus 2 comprises an illumination light source 4 for applying light and an information-transmitting unit 5 for transmitting optical information. A person who may receive information from the lighting apparatus 2 has a mobile terminal 3, which receives the optical information transmitted from the information-transmitting unit 5. Since the lighting apparatus of the existing type is widely used in our living space. Hence, the optical-information transmitting, lighting apparatus 2 can convert every place where an existing type lighting apparatus is used, into an optical communications space.

摘要翻译： 光信息传送照明装置2设置在通常使用的现有照明装置的场合。 照明装置2包括用于施加光的照明光源4和用于发送光学信息的信息发送单元5。 可以从照明装置2接收信息的人员具有接收从信息发送单元5发送的光学信息的移动终端3.由于现有类型的照明装置被广泛地用于我们的生活空间。 因此，光信息发送照明装置2能够将现有的照明装置的各个地方变换为光通信空间。

公开(公告)号：US08254790B2

公开(公告)日：2012-08-28

申请号：US13067608

申请日：2011-06-14

申请人： Nobukata Okano ,  Yoshiaki Watanabe ,  Jugo Mitomo ,  Tomomori Hino ,  Hironobu Narui

发明人： Nobukata Okano ,  Yoshiaki Watanabe ,  Jugo Mitomo ,  Tomomori Hino ,  Hironobu Narui

IPC分类号： H04B10/10

CPC分类号： H04B10/1149 ,  H04B10/116

摘要： An optical-information transmitting, lighting apparatus 2 is installed in a place where a lighting apparatus of the existing type for applying light generally used is provided. The lighting apparatus 2 comprises an illumination light source 4 for applying light and an information-transmitting unit 5 for transmitting optical information. A person who may receive information from the lighting apparatus 2 has a mobile terminal 3, which receives the optical information transmitted from the information-transmitting unit 5. Since the lighting apparatus of the existing type is widely used in our living space. Hence, the optical-information transmitting, lighting apparatus 2 can convert every place where an existing type lighting apparatus is used, into an optical communications space.

摘要翻译： 光信息传送照明装置2设置在通常使用的现有照明装置的场合。 照明装置2包括用于施加光的照明光源4和用于发送光学信息的信息发送单元5。 可以从照明装置2接收信息的人员具有接收从信息发送单元5发送的光学信息的移动终端3.由于现有类型的照明装置被广泛地用于我们的生活空间。 因此，光信息发送照明装置2能够将现有的照明装置的各个地方变换为光通信空间。

公开(公告)号：US07786493B2

公开(公告)日：2010-08-31

申请号：US11619347

申请日：2007-01-03

申请人： Yoshiaki Watanabe ,  Tomonori Hino

发明人： Yoshiaki Watanabe ,  Tomonori Hino

IPC分类号： H01L29/18

CPC分类号： H01L33/40 ,  F21K9/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/08 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00

摘要： Disclosed herein is a light emitting diode includes: a first semiconductor layer of a first conductivity type; an active layer on the first semiconductor layer; a second semiconductor layer of a second conductivity type on the active layer; a first electrode configured to be electrically coupled to the first semiconductor layer; and a second electrode configured to be provided on the second semiconductor layer and be electrically coupled to the second semiconductor layer, the second electrode including a first metal film that has a predetermined shape and is composed mainly of silver and a second metal film that covers the first metal film and is composed mainly of palladium and/or platinum.

摘要翻译： 本文公开了一种发光二极管，包括：第一导电类型的第一半导体层; 在第一半导体层上的有源层; 在有源层上的第二导电类型的第二半导体层; 第一电极，被配置为电耦合到所述第一半导体层; 以及第二电极，被配置为设置在所述第二半导体层上并且电耦合到所述第二半导体层，所述第二电极包括具有预定形状并且主要由银构成的第一金属膜和覆盖所述第二半导体层的第二金属膜 第一金属膜，主要由钯和/或铂组成。