摘要:
In a memory of an embodiment, first and second P-channel transistors are formed on a first semiconductor region, and each of the first and second P-channel transistors has a structure formed by stacking a first insulating film, a first floating gate, a second insulating film, a second floating gate, a third insulating film, and a first control gate in this order on the first semiconductor region. In the memory, first and second N-channel transistors are formed on a second semiconductor region, and each of the first and second N-channel transistors has a structure formed by stacking a fourth insulating film, a third floating gate, a fifth insulating film, a fourth floating gate, a sixth insulating film, and a second control gate in this order on the second semiconductor region.
摘要:
In a memory of an embodiment, first and second P-channel transistors are formed on a first semiconductor region, and each of the first and second P-channel transistors has a structure formed by stacking a first insulating film, a first floating gate, a second insulating film, a second floating gate, a third insulating film, and a first control gate in this order on the first semiconductor region. In the memory, first and second N-channel transistors are formed on a second semiconductor region, and each of the first and second N-channel transistors has a structure formed by stacking a fourth insulating film, a third floating gate, a fifth insulating film, a fourth floating gate, a sixth insulating film, and a second control gate in this order on the second semiconductor region.
摘要:
An aspect of the present embodiment, there is provided a nonvolatile programmable logic switch including a first memory cell transistor, a second memory cell transistor, a pass transistor and a first substrate electrode applying a substrate voltage to the pass transistor, wherein a writing voltage is applied to the first wiring, a first voltage is applied to one of a second wiring and a third wiring and a second voltage which is lower than the first voltage is applied to the other of the second wiring and the third wiring, and the first substrate voltage which is higher than the second voltage and lower than the first voltage is applied to a well of the pass transistor, when data is written into the first memory cell transistor or the second memory cell transistor.
摘要:
One embodiment provides a semiconductor integrated circuit, including: a substrate; a plurality of nonvolatile memory portions formed in the substrate, each including a first nonvolatile memory and a second nonvolatile memory; and a plurality of logic transistor portions formed in the substrate, each including at least one of logic transistor, wherein the logic transistors include: a first transistor which is directly connected to drains of the first and second nonvolatile memories at its gate; and a second transistor which is not directly connected to the drains of the first and second nonvolatile memories, and wherein a bottom surface of the gate of each of the logic transistors sandwiching the first and second nonvolatile memories is lower in height from a top surface of the substrate than a bottom surface of the control gate of each of the first and second nonvolatile memories.
摘要:
According to one embodiment, a nonvolatile semiconductor memory includes first to n-th (n is a natural number not less than 2) semiconductor layers in a first direction and extend in a second direction, and the semiconductor layers having a stair case pattern in a first end of the second direction, a common semiconductor layer connected to the first to n-th semiconductor layers commonly in the first end of the second direction, first to n-th layer select transistors which are provided in order from the first electrode side between the first electrode and the first to n-th memory strings, and first to n-th impurity regions which make the i-th layer select transistor (i is one of 1 to n) a normally-on state in the first end of the second direction of the i-th semiconductor layer.
摘要:
According to one embodiment, a nonvolatile semiconductor memory includes first to n-th (n is a natural number not less than 2) semiconductor layers in a first direction and extend in a second direction, and the semiconductor layers having a stair case pattern in a first end of the second direction, a common semiconductor layer connected to the first to n-th semiconductor layers commonly in the first end of the second direction, first to n-th layer select transistors which are provided in order from the first electrode side between the first electrode and the first to n-th memory strings, and first to n-th impurity regions which make the i-th layer select transistor (i is one of 1 to n) a normally-on state in the first end of the second direction of the i-th semiconductor layer.
摘要:
In a memory cell portion, a stacked structure, in which dielectric layers and semiconductor layers are alternately stacked, is arranged in a fin shape on a semiconductor substrate, and in a peripheral circuit portion, a gate electrode is arranged on the semiconductor substrate via a gate dielectric film so that a height of an upper surface of the gate electrode is set to be substantially equal to a height of an upper surface of the stacked structure in which the dielectric layers and the semiconductor layers are alternately stacked.
摘要:
According to an embodiment, an analog-to-digital converter includes a voltage generating unit to generate comparative voltages; and comparators. Each comparator compares any one of the comparative voltages with an analog input voltage and output a digital signal. Each comparator includes a differential pair circuit to detect a potential difference between two inputs. The differential pair circuit includes first and second circuit portions. The first circuit portion includes a first transistor having a gate to which one input is supplied; and a resistor connected in series with the first transistor. The second circuit portion includes a second transistor having a gate to which the other input is supplied and forms a differential pair with the first transistor; and a variable resistor connected in series with the second transistor. The variable resistor includes variable resistive elements each having a resistance value variably set according to a control signal.
摘要:
According to an embodiment, an analog-to-digital converter includes a voltage generating unit, and a plurality of comparators. The voltage generating unit is configured to divide a reference voltage by a plurality of variable resistors to generate a plurality of comparative voltages. Each of the plurality of comparator is configured to compare any one of the plurality of comparative voltages with an analog input voltage and output a digital signal based on a result of a comparison between the comparative voltage and the analog input voltage. Each of the plurality of variable resistors includes a plurality of variable resistive elements that are connected in series, and each of the plurality of variable resistive elements has a resistance value that is variably set according to an external signal.
摘要:
According to an embodiment, an analog-to-digital converter includes a voltage generating unit to generate comparative voltages; and comparators. Each comparator compares any one of the comparative voltages with an analog input voltage and output a digital signal. Each comparator includes a differential pair circuit to detect a potential difference between two inputs. The differential pair circuit includes first and second circuit portions. The first circuit portion includes a first transistor having a gate to which one input is supplied; and a resistor connected in series with the first transistor. The second circuit portion includes a second transistor having a gate to which the other input is supplied and forms a differential pair with the first transistor; and a variable resistor connected in series with the second transistor. The variable resistor includes variable resistive elements each having a resistance value variably set according to a control signal.