公开(公告)号：US06051454A

公开(公告)日：2000-04-18

申请号：US151357

申请日：1998-09-10

申请人： Yoshiharu Anda ,  Toshinobu Matsuno ,  Manabu Yanagihara ,  Mitsuru Tanabe ,  Toshiaki Matsui ,  Nobumitsu Hirose

发明人： Yoshiharu Anda ,  Toshinobu Matsuno ,  Manabu Yanagihara ,  Mitsuru Tanabe ,  Toshiaki Matsui ,  Nobumitsu Hirose

IPC分类号： H01L21/285 ,  H01L21/335 ,  H01L21/338

CPC分类号： H01L29/66462 ,  H01L21/28587 ,  Y10S438/95

摘要： A lower resist film, which is made of PMMA for EB exposure and has a thickness of about 200 nm, is applied onto a substrate, and then an upper resist film to be exposed to i-rays is applied on the lower resist film. Thereafter, a mixed layer, in which the upper and lower resist films are mixed, is formed in the interface between the upper and lower resist films. Next, the upper resist film, except for the head-forming region thereof, is exposed to i-rays and developed, thereby forming an upper-layer opening. And then the mixed layer and a leg-forming region of the lower resist film are exposed to EB and developed, thereby forming a lower-layer opening having an upper part like a taper progressively expanding upward.

摘要翻译： 将用于EB曝光的PMMA制成并具有约200nm厚度的较低抗蚀剂膜施加到基板上，然后在下抗蚀剂膜上施加暴露于i射线的上抗蚀剂膜。 此后，在上下抗蚀剂膜之间的界面中形成混合有上下抗蚀剂膜的混合层。 接下来，将除了其头部形成区域之外的上抗蚀剂膜暴露于i射线并显影，从而形成上层开口。 然后将下层抗蚀剂膜的混合层和腿部形成区域暴露于EB并显影，从而形成具有逐渐向上扩展的锥形的上部的下层开口。

公开(公告)号：US6153499A

公开(公告)日：2000-11-28

申请号：US289946

申请日：1999-04-13

申请人： Yoshiharu Anda ,  Toshinobu Matsuno ,  Katsunori Nishii ,  Kaoru Inoue ,  Manabu Yanagihara ,  Mitsuru Tanabe

发明人： Yoshiharu Anda ,  Toshinobu Matsuno ,  Katsunori Nishii ,  Kaoru Inoue ,  Manabu Yanagihara ,  Mitsuru Tanabe

IPC分类号： H01L21/28 ,  H01L21/027 ,  H01L21/285 ,  H01L21/338 ,  H01L21/768 ,  H01L29/812 ,  H01L21/44

CPC分类号： H01L21/28581 ,  H01L21/0271 ,  H01L21/0277 ,  H01L21/76816 ,  Y10S438/949

摘要： A first resist film for EB exposure, a buffer film, and a second resist film for i-line exposure are applied sequentially onto a substrate. Thereafter, the second resist film and the buffer film are subjected to patterning for forming a first opening. Then, dry etching is performed with respect to the first resist film masked with the second resist film to transfer the pattern of the second resist film to the first resist film and thereby form a second opening in the first resist film. Subsequently, a third resist film of chemically amplified type is applied to the entire surface of the first resist film to form a mixing layer in conjunction with the first resist film. As a result, the wall faces of the second opening are covered with the mixing layer and the width of the second opening is thereby reduced.

摘要翻译： 用于EB曝光的第一抗蚀剂膜，缓冲膜和用于i线曝光的第二抗蚀剂膜顺序地施加到基板上。 此后，对第二抗蚀剂膜和缓冲膜进行用于形成第一开口的图案化。 然后，相对于用第二抗蚀剂膜掩蔽的第一抗蚀剂膜进行干蚀刻，将第二抗蚀剂膜的图案转印到第一抗蚀剂膜上，从而在第一抗蚀剂膜中形成第二开口。 随后，将化学放大型的第三抗蚀剂膜施加到第一抗蚀剂膜的整个表面上以与第一抗蚀剂膜结合形成混合层。 结果，第二开口的壁面被混合层覆盖，从而减小了第二开口的宽度。

公开(公告)号：US07846620B2

公开(公告)日：2010-12-07

申请号：US11860756

申请日：2007-09-25

申请人： Motonori Ishii ,  Kazutoshi Onozawa ,  Kimiaki Toshikiyo ,  Toshinobu Matsuno ,  Takanori Yogo

发明人： Motonori Ishii ,  Kazutoshi Onozawa ,  Kimiaki Toshikiyo ,  Toshinobu Matsuno ,  Takanori Yogo

IPC分类号： G03F1/00

CPC分类号： G03F7/0005 ,  G03F1/30

摘要： The phase shift mask according to the present invention is a phase shift mask for manufacturing a semiconductor device. The phase shift mask includes a light-blocking portion, a light-transmitting portion, a phase shift portion, and an auxiliary pattern portion, the light-blocking portion, the light-transmitting portion, the phase shift portion, and the auxiliary pattern portion being concentrically arranged, wherein a width of the auxiliary pattern portion in a radius direction is less than a width of the light-transmitting portion and a width of the phase shift portion in a radius direction. Furthermore, it is possible that a phase of exposure light which passes through an auxiliary pattern portion is opposite to a phase of exposure light which passes through a light-transmitting portion or a phase shift portion, the light-transmitting portion or the phase shift portion being the closest to the auxiliary pattern portion.

摘要翻译： 根据本发明的相移掩模是用于制造半导体器件的相移掩模。 相移掩模包括遮光部分，透光部分，相移部分和辅助图案部分，遮光部分，透光部分，相移部分和辅助图案部分 其中所述辅助图形部分在半径方向上的宽度小于所述透光部分的宽度和所述相移部分在半径方向上的宽度。 此外，通过辅助图案部分的曝光光的相位可能与通过透光部分或相移部分的曝光光的相位相反，透光部分或相移部分 最靠近辅助图案部分。

公开(公告)号：US07585706B2

公开(公告)日：2009-09-08

申请号：US11898951

申请日：2007-09-18

申请人： Katsunori Nishii ,  Kaoru Inoue ,  Toshinobu Matsuno ,  Yoshito Ikeda ,  Hiroyuki Masato

发明人： Katsunori Nishii ,  Kaoru Inoue ,  Toshinobu Matsuno ,  Yoshito Ikeda ,  Hiroyuki Masato

IPC分类号： H01L21/336

CPC分类号： H01L29/66863 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7783

摘要： The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion of the active region by oxidizing the group III nitride semiconductor. On the active region, a gate electrode in Schottky contact with the active region extending onto the insulating oxide film and having an extended portion on the insulating oxide film is formed, and ohmic electrodes respectively serving as a source electrode and a drain electrode are formed with space from side edges along the gate length direction of the gate electrode.

摘要翻译： 本发明的半导体器件包括由在衬底上生长的III族氮化物半导体形成的有源区和通过氧化III族氮化物半导体而形成在有源区的周边部分中的绝缘氧化物膜。 在有源区域上，形成与延伸到绝缘氧化膜上并在绝缘氧化膜上具有延伸部分的有源区肖特基接触的栅电极，分别用作源电极和漏电极的欧姆电极形成有 沿着栅电极的栅极长度方向的侧边缘的空间。

公开(公告)号：US07285806B2

公开(公告)日：2007-10-23

申请号：US09813304

申请日：2001-03-21

申请人： Katsunori Nishi ,  Kaoru Inoue ,  Toshinobu Matsuno ,  Yoshito Ikeda ,  Hiroyuki Masato

发明人： Katsunori Nishi ,  Kaoru Inoue ,  Toshinobu Matsuno ,  Yoshito Ikeda ,  Hiroyuki Masato

IPC分类号： H01L31/00 ,  H01L21/336

CPC分类号： H01L29/66863 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7783

摘要： The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion of the active region by oxidizing the group III nitride semiconductor. On the active region, a gate electrode in Schottky contact with the active region extending onto the insulating oxide film and having an extended portion on the insulating oxide film is formed, and ohmic electrodes respectively serving as a source electrode and a drain electrode are formed with space from side edges along the gate length direction of the gate electrode.

摘要翻译： 本发明的半导体器件包括由在衬底上生长的III族氮化物半导体形成的有源区和通过氧化III族氮化物半导体而形成在有源区的周边部分中的绝缘氧化物膜。 在有源区域上，形成与延伸到绝缘氧化膜上并在绝缘氧化膜上具有延伸部分的有源区肖特基接触的栅电极，分别用作源电极和漏电极的欧姆电极形成有 沿着栅电极的栅极长度方向的侧边缘的空间。

公开(公告)号：US20090250594A1

公开(公告)日：2009-10-08

申请号：US12415127

申请日：2009-03-31

申请人： Keisuke Tanaka ,  Yutaka Hirose ,  Toshinobu Matsuno ,  Kimiaki Toshikiyo ,  Motonori Ishii

发明人： Keisuke Tanaka ,  Yutaka Hirose ,  Toshinobu Matsuno ,  Kimiaki Toshikiyo ,  Motonori Ishii

IPC分类号： H01L27/146 ,  H01L21/00 ,  H01L27/14

CPC分类号： H01L27/14627 ,  G02B5/201 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14685 ,  H01L27/14689

摘要： A solid-state image sensor that has a high pixel count and includes a color filter having high color reproducibility is provided. The solid-state image sensor includes: light-collecting elements each of which is a medium containing dispersant particles; light-receiving elements each of which is provided for a corresponding one of the light-collecting elements, and which receives light collected by the corresponding one of the light-collecting elements and generates an electric signal; and electrical wiring for transferring the electric signal, wherein each of the light-collecting elements has one of plural light-dispersion functions that are different depending on the corresponding light-receiving elements.

摘要翻译： 提供了具有高像素数并且包括具有高颜色再现性的滤色器的固态图像传感器。 固态图像传感器包括：各自是含有分散剂颗粒的介质的集光元件; 光接收元件被设置用于相应的一个集光元件，并且接收由相应的一个光收集元件收集的光并产生电信号; 以及用于传送电信号的电线，其中每个集光元件具有根据相应的光接收元件而不同的多个光分散功能之一。

公开(公告)号：US06593193B2

公开(公告)日：2003-07-15

申请号：US10054843

申请日：2002-01-25

申请人： Katsunori Nishii ,  Kaoru Inoue ,  Toshinobu Matsuno ,  Yoshito Ikeda ,  Hiroyuki Masato

发明人： Katsunori Nishii ,  Kaoru Inoue ,  Toshinobu Matsuno ,  Yoshito Ikeda ,  Hiroyuki Masato

IPC分类号： H01L21336

CPC分类号： H01L29/66462 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/7783

摘要： An insulating-gate semiconductor device has a first nitride semiconductor layer formed over a substrate and an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer. A gate electrode is formed on the insulating oxidation layer.

公开(公告)号：US08354693B2

公开(公告)日：2013-01-15

申请号：US12035340

申请日：2008-02-21

申请人： Mitsuyoshi Mori ,  Toru Okino ,  Daisuke Ueda ,  Toshinobu Matsuno

发明人： Mitsuyoshi Mori ,  Toru Okino ,  Daisuke Ueda ,  Toshinobu Matsuno

IPC分类号： H01L31/0336

CPC分类号： H01L27/14689 ,  H01L27/14632 ,  H01L27/14645 ,  H01L27/14687

摘要： A solid state imaging device includes a pixel having a photoelectric conversion element formed on a semiconductor substrate. The photoelectric conversion element includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and forming a junction therebetween; a third semiconductor layer formed on the second semiconductor layer and having a smaller band gap energy than the second semiconductor layer, the third semiconductor layer being made of a single-crystal semiconductor and containing an impurity; and a fourth semiconductor layer of the first conductivity type covering a side surface and an upper surface of the third semiconductor layer. Provision of the fourth semiconductor layer can reduce a current flowing in dark conditions.

摘要翻译： 固态成像装置包括具有形成在半导体基板上的光电转换元件的像素。 光电转换元件包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层，形成在第一半导体层上并在其间形成接合部; 形成在所述第二半导体层上并且具有比所述第二半导体层更小的带隙能量的第三半导体层，所述第三半导体层由单晶半导体制成并且含有杂质; 以及覆盖第三半导体层的侧表面和上表面的第一导电类型的第四半导体层。 提供第四半导体层可以减少在黑暗条件下流动的电流。

公开(公告)号：US07663084B2

公开(公告)日：2010-02-16

申请号：US12189971

申请日：2008-08-12

申请人： Kimiaki Toshikiyo ,  Takanori Yogo ,  Motonori Ishii ,  Toshinobu Matsuno ,  Kazutoshi Onozawa

发明人： Kimiaki Toshikiyo ,  Takanori Yogo ,  Motonori Ishii ,  Toshinobu Matsuno ,  Kazutoshi Onozawa

IPC分类号： H01L27/00

CPC分类号： H01L27/14627 ,  H01L27/14685

摘要： A solid-state imaging apparatus includes a plurality of unit pixels with associated microlenses arranged in a two-dimensional array. Each microlens includes a distributed index lens with a modulated effective refractive index distribution obtained by including a combination of a plurality of patterns having a concentric structure, the plurality of patterns being divided into line widths equal to or shorter than a wavelength of an incident light. At least one of the plurality of patterns includes a lower light-transmitting film having the concentric structure and a first line width and a first film thickness, and an upper light-transmitting film having the concentric structure configured on the lower light-transmitting film having a second line width and a second film thickness. The distributed index lens has a structure in which a refractive index material is dense at a center and becomes sparse gradually toward an outer side in the concentric structure.

摘要翻译： 固态成像装置包括具有以二维阵列排列的相关联的微透镜的多个单位像素。 每个微透镜包括具有调制的有效折射率分布的分布式折射率透镜，通过包括具有同心结构的多个图案的组合而获得，所述多个图案被划分成等于或短于入射光的波长的线宽。 多个图案中的至少一个图案包括具有同心结构且第一线宽度和第一膜厚度的下部透光膜，以及具有同心结构的上部透光膜，其在下部透光膜上具有 第二线宽度和第二膜厚度。 分布式折射率透镜具有其中折射率材料在中心处致密并且在同心结构中朝向外侧逐渐变稀的结构。

公开(公告)号：US07307292B2

公开(公告)日：2007-12-11

申请号：US10456901

申请日：2003-06-09

申请人： Katsunori Nishii ,  Kaoru Inoue ,  Toshinobu Matsuno ,  Yoshito Ikeda ,  Hiroyuki Masato

发明人： Katsunori Nishii ,  Kaoru Inoue ,  Toshinobu Matsuno ,  Yoshito Ikeda ,  Hiroyuki Masato

IPC分类号： H01L31/0336

CPC分类号： H01L29/66462 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/7783

摘要： An insulating-gate semiconductor device has a first nitride semiconductor layer formed over a substrate and an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer. A gate electrode is formed on the insulating oxidation layer.

摘要翻译： 绝缘栅半导体器件具有形成在衬底上的第一氮化物半导体层和通过氧化形成在第一氮化物半导体层上的第二氮化物半导体层而获得的绝缘氧化层。 在绝缘氧化层上形成栅电极。