公开(公告)号：US20050051855A1

公开(公告)日：2005-03-10

申请号：US10910574

申请日：2004-08-04

申请人： Yoshiharu Kanegae ,  Tomio Iwasaki ,  Hiroshi Moriya

发明人： Yoshiharu Kanegae ,  Tomio Iwasaki ,  Hiroshi Moriya

IPC分类号： H01L21/283 ,  H01L21/28 ,  H01L21/314 ,  H01L21/3205 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8247 ,  H01L23/52 ,  H01L27/04 ,  H01L27/088 ,  H01L27/115 ,  H01L29/417 ,  H01L29/51 ,  H01L29/76 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/11521 ,  H01L21/28035 ,  H01L21/28202 ,  H01L21/823456 ,  H01L21/823462 ,  H01L21/82385 ,  H01L21/823857 ,  H01L27/115 ,  H01L29/518 ,  H01L29/7842 ,  H01L29/7845 ,  H01L29/7881

摘要： A semiconductor device constitutes an electric field effect type transistor having a semiconductor substrate, a gate insulating layer formed on the substrate and a gate electrode formed on the gate insulating layer. The gate insulating layer is mainly formed of silicon oxynitride (SiON) and a strain state of the gate insulating layer is a compressed strain state.

摘要翻译： 半导体器件构成具有半导体衬底，形成在衬底上的栅极绝缘层和形成在栅极绝缘层上的栅电极的电场效应型晶体管。 栅极绝缘层主要由氮氧化硅（SiON）形成，并且栅极绝缘层的应变状态是压缩应变状态。

公开(公告)号：US08488277B2

公开(公告)日：2013-07-16

申请号：US12687140

申请日：2010-01-14

申请人： Yoshiharu Kanegae

发明人： Yoshiharu Kanegae

IPC分类号： G11B5/82 ,  G11B5/738

CPC分类号： G11B5/855 ,  G11B5/64 ,  G11B5/66 ,  G11B5/82

摘要： A magnetic recording medium for a hard disk drive, including a thermal conduction layer made of materials having different thermal conductivities formed on a recording layer having data recording regions and including magnetic particles that are heated and cooled for magnetic recording, is provided based on a thermally assisted magnetic recording technique. First thin films made of a material high in thermal conductivity are formed on portions of the thermal conduction layer, said portions located in association with portions of the data recording regions. Second thin films made of a material lower in thermal conductivity than the first thin films are formed between respective pairs of the first thin films within the thermal conduction layer. The magnetic recording medium ensures the thermal stability of the magnetic particles heated for the magnetic recording, and the thermal stability of magnetic particles located near the heated magnetic particles, thereby suppressing disappearance of data.

摘要翻译： 一种用于硬盘驱动器的磁记录介质，其包括由具有不同热导率的材料制成的导热层，所述导热层形成在具有数据记录区域的记录层上并且包括用于磁记录的被加热和冷却的磁性颗粒。 辅助磁记录技术。 在导热层的部分上形成由导热性高的材料制成的第一薄膜，所述部分与数据记录区的部分相关联。 在热传导层内的各对第一薄膜之间形成由导热率低于第一薄膜的材料制成的第二薄膜。 磁记录介质确保了磁记录加热的磁性颗粒的热稳定性，以及位于加热的磁性颗粒附近的磁性颗粒的热稳定性，从而抑制了数据的消失。

公开(公告)号：US20120064374A1

公开(公告)日：2012-03-15

申请号：US13301212

申请日：2011-11-21

申请人： Yoshiharu Kanegae

发明人： Yoshiharu Kanegae

IPC分类号： G11B5/66 ,  B32B3/00 ,  G03F7/20

CPC分类号： G11B5/855 ,  Y10T428/24355

摘要： Disclosed herein are a dot-patterned structure for magnetic recording bits and a magnetic recording medium provided therewith. The former exhibits high functionality and high performance owing to good crystallinity. The dot-patterned structure is composed of a first layer, which is continuous, and a second layer, which is discrete. The magnetic recording medium having a dot-patterned recording layer is formed by the steps of treating an underlying layer by lithography, thereby forming grooves, filling the grooves by epitaxial growth with the same material as the underlying layer, removing the photoresist used for lithography in a solvent, thereby forming pits, and filling the pits by epitaxial growth with a magnetic film as the recording layer.

摘要翻译： 这里公开了用于磁记录位的点图案结构和设置有磁记录位的磁记录介质。 由于良好的结晶度，前者具有高功能性和高性能。 点图案结构由连续的第一层和离散的第二层组成。 具有点状图案记录层的磁记录介质通过以下步骤形成：通过光刻处理下层，从而形成凹槽，通过与下层相同的材料进行外延生长填充凹槽，除去用于光刻的光致抗蚀剂 溶剂，从而形成凹坑，并通过外延生长用磁性膜作为记录层填充凹坑。

公开(公告)号：US07279739B2

公开(公告)日：2007-10-09

申请号：US11354092

申请日：2006-02-15

申请人： Yoshiharu Kanegae ,  Tomio Iwasaki

发明人： Yoshiharu Kanegae ,  Tomio Iwasaki

IPC分类号： H01L29/788

CPC分类号： H01L23/485 ,  B82Y10/00 ,  H01L21/28273 ,  H01L23/53223 ,  H01L23/53238 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42332 ,  H01L2924/0002 ,  Y10S977/774 ,  H01L2924/00

摘要： There is provided a high-reliability nano-dots memory by forming the nano dots uniformly. Also, there is provided the high-speed and high-reliability nano-dots memory by employing a silicon-oxide-film alternative material as a tunnel insulating film. The nano-dots memory includes the tunnel insulating film and silicide nano-dots of CoSi2 or NiSi2. Here, the tunnel insulating film is formed by epitaxially growing a high-permittivity insulating film of HfO2, ZrO2 or CeO2 on a silicon or germanium substrate, or preferably, on a silicon or germanium (111) substrate. Also, the silicide nano-dots are formed on the tunnel insulating film.

摘要翻译： 通过均匀地形成纳米点，提供了高可靠性的纳米点记忆。 此外，通过采用氧化硅膜替代材料作为隧道绝缘膜，提供了高速度和高可靠性的纳米点存储器。 纳米点存储器包括隧道绝缘膜和CoSi 2 N或NiSi 2 N的硅化物纳米点。 这里，隧道绝缘膜通过在硅上外延生长HfO 2 2，ZrO 2或CeO 2 2的高介电常数绝缘膜而形成 或锗衬底，或优选在硅或锗（111）衬底上。 此外，硅化物纳米点形成在隧道绝缘膜上。

公开(公告)号：US07215566B2

公开(公告)日：2007-05-08

申请号：US11214869

申请日：2005-08-31

申请人： Yoshiharu Kanegae

发明人： Yoshiharu Kanegae

IPC分类号： G11C11/22

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/15 ,  H01L27/228

摘要： A magnetic memory includes a TMR element in its memory layer, wherein the TMR element in the memory layer has ferromagnetic layers which are kept in tensile strain, the ferromagnetic layers having either Fe, Co or Ni, and a wiring layer adjacent to each of the ferromagnetic layers includes either Ru, W, Ir, Os or Mo, thereby increasing the magnetization.

摘要翻译： 磁存储器包括其存储层中的TMR元件，其中存储层中的TMR元件具有保持拉伸应变的铁磁层，铁磁层具有Fe，Co或Ni，以及与 铁磁层包括Ru，W，Ir，Os或Mo，从而增加磁化强度。

公开(公告)号：US09252793B2

公开(公告)日：2016-02-02

申请号：US13990030

申请日：2010-11-29

申请人： Toshiaki Tsutsumi ,  Yoshihiro Funato ,  Tomonori Okudaira ,  Tadato Yamagata ,  Akihisa Uchida ,  Takeshi Terasaki ,  Tomohisa Suzuki ,  Yoshiharu Kanegae

发明人： Toshiaki Tsutsumi ,  Yoshihiro Funato ,  Tomonori Okudaira ,  Tadato Yamagata ,  Akihisa Uchida ,  Takeshi Terasaki ,  Tomohisa Suzuki ,  Yoshiharu Kanegae

IPC分类号： H03L7/24 ,  H01L23/522 ,  H01L27/06 ,  H01L23/31 ,  H01L23/00

CPC分类号： H03B5/24 ,  H01L23/3107 ,  H01L23/5228 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L27/0629 ,  H01L28/20 ,  H01L28/24 ,  H01L2224/05554 ,  H01L2224/06179 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/01015 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/181 ,  H03L7/24 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor device is formed by sealing, with a resin, a semiconductor chip (CP1) having an oscillation circuit utilizing a reference resistor. The oscillation circuit generates a reference current by utilizing the reference resistor, a voltage is generated in accordance with this reference current and an oscillation frequency of the oscillation unit, and the oscillation unit oscillates at a frequency in accordance with the generated voltage. The reference resistor is formed of a plurality of resistors, which extend in a first (Y) direction orthogonal to a first side, inside a first region (RG1, RG2, RG3, and RG4) surrounded by the first side (S1, S2, S3, and S4) of a main surface of the semiconductor chip (CP1), a first line (42, 43, 44, and 45) connecting between one end of the first side and the center (CT1) of the main surface of the semiconductor chip, and a second line (42, 43, 44, and 45) connecting between the other end of the first side and the center of the main surface of the semiconductor chip.

公开(公告)号：US20130314165A1

公开(公告)日：2013-11-28

申请号：US13990030

申请日：2010-11-29

申请人： Toshiaki Tsutsumi ,  Yoshihiro Funato ,  Tomonori Okudaira ,  Tadato Yamagata ,  Akihisa Uchida ,  Takeshi Terasaki ,  Tomohisa Suzuki ,  Yoshiharu Kanegae

发明人： Toshiaki Tsutsumi ,  Yoshihiro Funato ,  Tomonori Okudaira ,  Tadato Yamagata ,  Akihisa Uchida ,  Takeshi Terasaki ,  Tomohisa Suzuki ,  Yoshiharu Kanegae

IPC分类号： H03L7/24

CPC分类号： H03B5/24 ,  H01L23/3107 ,  H01L23/5228 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L27/0629 ,  H01L28/20 ,  H01L28/24 ,  H01L2224/05554 ,  H01L2224/06179 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/01015 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/181 ,  H03L7/24 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor device is formed by sealing, with a resin, a semiconductor chip (CP1) having an oscillation circuit utilizing a reference resistor. The oscillation circuit generates a reference current by utilizing the reference resistor, a voltage is generated in accordance with this reference current and an oscillation frequency of the oscillation unit, and the oscillation unit oscillates at a frequency in accordance with the generated voltage. The reference resistor is formed of a plurality of resistors, which extend in a first (Y) direction orthogonal to a first side, inside a first region (RG1, RG2, RG3, and RG4) surrounded by the first side (S1, S2, S3, and S4) of a main surface of the semiconductor chip (CP1), a first line (42, 43, 44, and 45) connecting between one end of the first side and the center (CT1) of the main surface of the semiconductor chip, and a second line (42, 43, 44, and 45) connecting between the other end of the first side and the center of the main surface of the semiconductor chip.

摘要翻译： 通过用树脂密封具有利用参考电阻器的振荡电路的半导体芯片（CP1）形成半导体器件。 振荡电路利用参考电阻产生参考电流，根据该参考电流产生电压和振荡单元的振荡频率，并且振荡单元根据所产生的电压以频率振荡。 参考电阻器由多个电阻器构成，该多个电阻器在与第一侧面正交的第一（Y）方向上在由第一侧（S1，S2，RG3，RG3和RG4）包围的第一区域（RG1，RG2， S3和S4），连接在第一侧的一端与第一侧的主表面的中心（CT1）之间的第一线（42,43,44和45） 半导体芯片和连接在第一侧的另一端和半导体芯片的主表面的中心之间的第二线（42,43,44和45）。

公开(公告)号：US20070126051A1

公开(公告)日：2007-06-07

申请号：US11635759

申请日：2006-12-06

申请人： Yoshiharu Kanegae

发明人： Yoshiharu Kanegae

IPC分类号： H01L29/788

CPC分类号： H01L29/7881 ,  B82Y10/00 ,  H01L29/40114 ,  H01L29/42332 ,  H01L29/66825

摘要： A semiconductor memory device having a stable characteristic and high reliability is achieved with formation of nano-dots with excellent interface stability. Source/drain diffusion layers are formed on a P-type silicon substrate to form a silicon oxide film. On this silicon oxide film, a silicon-rich oxide film is formed in a dot shape. On the silicon-rich oxide film, an interlayer dielectric made of SiO2 is formed. The silicon-rich oxide film has a property of storing charges in the film and excellent in stability of an interface with a silicon oxide film used for a tunneling dielectric. With this, a semiconductor memory device having a stable characteristic and high reliability is achieved with formation of nano-dots with excellent interface stability.

摘要翻译： 通过形成具有优异的界面稳定性的纳米点，实现了具有稳定特性和高可靠性的半导体存储器件。 源极/漏极扩散层形成在P型硅衬底上以形成氧化硅膜。 在该氧化硅膜上形成点状的富硅氧化物膜。 在富硅氧化物膜上形成由SiO 2构成的层间绝缘膜。 富硅氧化物膜具有在膜中储存电荷的性质，并且与用于隧道电介质的氧化硅膜的界面的稳定性优异。 由此，通过形成具有优异的界面稳定性的纳米点，实现了具有稳定特性和高可靠性的半导体存储器件。

公开(公告)号：US07180143B2

公开(公告)日：2007-02-20

申请号：US10910574

申请日：2004-08-04

申请人： Yoshiharu Kanegae ,  Tomio Iwasaki ,  Hiroshi Moriya

发明人： Yoshiharu Kanegae ,  Tomio Iwasaki ,  Hiroshi Moriya

IPC分类号： H01L29/94

CPC分类号： H01L27/11521 ,  H01L21/28035 ,  H01L21/28202 ,  H01L21/823456 ,  H01L21/823462 ,  H01L21/82385 ,  H01L21/823857 ,  H01L27/115 ,  H01L29/518 ,  H01L29/7842 ,  H01L29/7845 ,  H01L29/7881

摘要： A semiconductor device constitutes an electric field effect type transistor having a semiconductor substrate, a gate insulating layer formed on the substrate and a gate electrode formed on the gate insulating layer. The gate insulating layer is mainly formed of silicon oxynitride (SiON) and a strain state of the gate insulating layer is a compressed strain state.

摘要翻译： 半导体器件构成具有半导体衬底，形成在衬底上的栅极绝缘层和形成在栅极绝缘层上的栅电极的电场效应型晶体管。 栅极绝缘层主要由氮氧化硅（SiON）形成，并且栅极绝缘层的应变状态是压缩应变状态。

公开(公告)号：US20060180852A1

公开(公告)日：2006-08-17

申请号：US11354092

申请日：2006-02-15

申请人： Yoshiharu Kanegae ,  Tomio Iwasaki

发明人： Yoshiharu Kanegae ,  Tomio Iwasaki

IPC分类号： H01L29/788

CPC分类号： H01L23/485 ,  B82Y10/00 ,  H01L21/28273 ,  H01L23/53223 ,  H01L23/53238 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42332 ,  H01L2924/0002 ,  Y10S977/774 ,  H01L2924/00

摘要： There is provided a high-reliability nano-dots memory by forming the nano dots uniformly. Also, there is provided the high-speed and high-reliability nano-dots memory by employing a silicon-oxide-film alternative material as a tunnel insulating film. The nano-dots memory includes the tunnel insulating film and silicide nano-dots of CoSi2 or NiSi2. Here, the tunnel insulating film is formed by epitaxially growing a high-permittivity insulating film of HfO2, ZrO2 or CeO2 on a silicon or germanium substrate, or preferably, on a silicon or germanium (111) substrate. Also, the silicide nano-dots are formed on the tunnel insulating film.

摘要翻译： 通过均匀地形成纳米点，提供了高可靠性的纳米点记忆。 此外，通过采用氧化硅膜替代材料作为隧道绝缘膜，提供了高速度和高可靠性的纳米点存储器。 纳米点存储器包括隧道绝缘膜和CoSi 2 N或NiSi 2 N的硅化物纳米点。 这里，通过在硅上外延生长HfO 2 2，ZrO 2或CeO 2 2的高介电常数绝缘膜来形成隧道绝缘膜 或锗衬底，或优选在硅或锗（111）衬底上。 此外，硅化物纳米点形成在隧道绝缘膜上。