Power block and power semiconductor module using same

    公开(公告)号:US08334589B2

    公开(公告)日:2012-12-18

    申请号:US13008470

    申请日:2011-01-18

    IPC分类号: H01L23/492 H01L23/02

    摘要: A power block includes an insulating substrate, a conductive pattern formed on the insulating substrate, a power semiconductor chip bonded onto the conductive pattern by lead-free solder, a plurality of electrodes electrically connected to the power semiconductor chip and extending upwardly away from the insulating substrate, and a transfer molding resin covering the conductive pattern, the lead-free solder, the power semiconductor chip, and the plurality of electrodes, wherein surfaces of the plurality of electrodes are exposed at an outer surface of the transfer molding resin and lie in the same plane as the outer surface, the outer surface being located directly above the conductive pattern.

    Power block and power semiconductor module using same

    公开(公告)号:US08294257B2

    公开(公告)日:2012-10-23

    申请号:US13008470

    申请日:2011-01-18

    IPC分类号: H01L23/492 H01L23/02

    摘要: A power block includes an insulating substrate, a conductive pattern formed on the insulating substrate, a power semiconductor chip bonded onto the conductive pattern by lead-free solder, a plurality of electrodes electrically connected to the power semiconductor chip and extending upwardly away from the insulating substrate, and a transfer molding resin covering the conductive pattern, the lead-free solder, the power semiconductor chip, and the plurality of electrodes, wherein surfaces of the plurality of electrodes are exposed at an outer surface of the transfer molding resin and lie in the same plane as the outer surface, the outer surface being located directly above the conductive pattern.