-
公开(公告)号：US20050006684A1
公开(公告)日：2005-01-13
申请号：US10916482
申请日：2004-08-12
IPC分类号： H01L21/02 , H01L21/8242 , H01L29/76
CPC分类号： H01L28/55 , H01L27/10852 , H01L28/65 , H01L28/90
摘要： A capacitive element includes a lower electrode having a three-dimensional shape, an upper electrode formed so as to be opposed to the lower electrode, and a capacitor insulating film formed between the lower and upper electrodes and made of a crystallized ferroelectric material. The thickness of the capacitor insulating film is set at 12.5 through 100 nm both inclusive.
摘要翻译： 电容元件包括具有三维形状的下电极，形成为与下电极相对的上电极，以及形成在下电极和上电极之间并由结晶铁电材料制成的电容器绝缘膜。 电容绝缘膜的厚度设定为12.5〜100nm。
-
公开(公告)号：US06448598B2
公开(公告)日：2002-09-10
申请号：US09338542
申请日：1999-06-23
IPC分类号： H01L27108
CPC分类号： H01L27/10852 , H01L28/55
摘要： A semiconductor memory includes plural lower electrodes formed on a semiconductor substrate; a capacitor dielectric film of an insulating metal oxide continuously formed over the plural lower electrodes; plural upper electrodes formed on the capacitor dielectric film in positions respectively corresponding to the plural lower electrodes; and plural transistors formed on the semiconductor substrate. The plural lower electrodes are respectively connected with source regions of the plural transistors.
摘要翻译： 半导体存储器包括形成在半导体衬底上的多个下电极; 连续地形成在所述多个下电极上的绝缘金属氧化物的电容器电介质膜; 在分别对应于多个下电极的位置上形成在电容器电介质膜上的多个上电极; 以及形成在半导体基板上的多个晶体管。 多个下电极分别与多个晶体管的源极区域连接。
-
3.发明授权Method of fabricating semiconductor device with capacitor covered by a TEOS-03 film 失效制造具有TEOS-03薄膜覆盖的电容器的半导体器件的方法公开(公告)号：US06939725B2
公开(公告)日：2005-09-06
申请号：US10769808
申请日：2004-02-03
IPC分类号： H01L23/522 , C23C16/40 , H01L21/02 , H01L21/316 , H01L21/318 , H01L21/768 , H01L21/822 , H01L21/8234 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/06 , H01L27/105 , H01L27/108 , H01L21/00 , H01L29/76
CPC分类号： H01L28/55 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02304 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/31612
摘要： A capacitor including a capacitor lower electrode, a capacitor dielectric film of a highly dielectric film or a ferroelectric film and a capacitor upper electrode is formed on a semiconductor substrate. A protection film is formed on the semiconductor substrate so as to cover the capacitor. A first TEOS film having a relatively large water content is formed on the protection film through first TEOS-O3 CVD where an ozone concentration is relatively low. A second TEOS-O3 film having a relatively small water content is formed on the first TEOS-O3 film through second TEOS-O3 CVD where the ozone concentration is relatively high.
摘要翻译： 在半导体衬底上形成包括电容器下电极，高电介质膜的电容器电介质膜或铁电体膜和电容器上电极的电容器。 在半导体衬底上形成保护膜以覆盖电容器。 具有相对较大含水量的第一TEOS膜通过臭氧浓度相对较低的第一TEOS-O 3 CVD形成在保护膜上。 通过第二TEOS-O 3 3在第一TEOS-O 3膜上形成具有相对较小含水量的第二TEOS-O 3膜。 臭氧浓度相对较高的CVD。
-
公开(公告)号：US06847074B2
公开(公告)日：2005-01-25
申请号：US09785502
申请日：2001-02-20
申请人： Yoshihisa Nagano , Tooru Nasu , Shinichiro Hayashi , Eiji Fujii
发明人： Yoshihisa Nagano , Tooru Nasu , Shinichiro Hayashi , Eiji Fujii
IPC分类号： H01L27/108 , H01L21/02 , H01L21/8242 , H01L27/105 , H01L29/72
CPC分类号： H01L28/75 , H01L27/10852 , H01L28/55
摘要： A semiconductor memory device according to the present invention includes a memory cell capacitor for storing data thereon. The capacitor is made up of a first electrode connected to a contact plug, a second electrode and a capacitive insulating film interposed between the first and second electrodes. The first electrode includes a first barrier film in contact with the contact plug and a second barrier film, which is formed on the first barrier film and prevents the diffusion of oxygen. The second barrier film covers the upper and side faces of the first barrier film.
摘要翻译： 根据本发明的半导体存储器件包括用于在其上存储数据的存储单元电容器。 电容器由连接到第一和第二电极之间的接触插塞，第二电极和电容绝缘膜的第一电极组成。 第一电极包括与接触塞接触的第一阻挡膜和形成在第一阻挡膜上并防止氧的扩散的第二阻挡膜。 第二阻挡膜覆盖第一阻挡膜的上表面和侧面。
-
公开(公告)号：US07015564B2
公开(公告)日：2006-03-21
申请号：US10916482
申请日：2004-08-12
IPC分类号： H01L29/00
CPC分类号： H01L28/55 , H01L27/10852 , H01L28/65 , H01L28/90
摘要： A capacitive element includes a lower electrode having a three-dimensional shape, an upper electrode formed so as to be opposed to the lower electrode, and a capacitor insulating film formed between the lower and upper electrodes and made of a crystallized ferroelectric material. The thickness of the capacitor insulating film is set at 12.5 through 100 nm both inclusive.
摘要翻译： 电容元件包括具有三维形状的下电极，形成为与下电极相对的上电极，以及形成在下电极和上电极之间并由结晶铁电材料制成的电容器绝缘膜。 电容绝缘膜的厚度设定为12.5〜100nm。
-
公开(公告)号：US06737697B2
公开(公告)日：2004-05-18
申请号：US09779662
申请日：2001-02-09
IPC分类号： H01L2976
CPC分类号： H01L28/55 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02304 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/31612
摘要： A capacitor including a capacitor lower electrode, a capacitor dielectric film of a highly dielectric film or a ferroelectric film and a capacitor upper electrode is formed on a semiconductor substrate. A protection film is formed on the semiconductor substrate so as to cover the capacitor. A first TEOS film having a relatively large water content is formed on the protection film through first TEOS-O3 CVD where an ozone concentration is relatively low. A second TEOS-O3 film having a relatively small water content is formed on the first TEOS-O3 film through second TEOS-O3 CVD where the ozone concentration is relatively high.
-
公开(公告)号：US07531863B2
公开(公告)日：2009-05-12
申请号：US11270615
申请日：2005-11-10
申请人： Yoshihisa Nagano , Yasuhiro Uemoto
发明人： Yoshihisa Nagano , Yasuhiro Uemoto
IPC分类号： H01L27/108
CPC分类号： H01L27/10894 , H01L27/10852 , H01L27/11507 , H01L27/11509 , H01L28/55
摘要： A protective insulating film is deposited over first and second field-effect transistors formed on a semiconductor substrate. A capacitor composed of a capacitor lower electrode, a capacitor insulating film composed of an insulating metal oxide film, and a capacitor upper electrode is formed on the protective insulating film. A first contact plug formed in the protective insulating film provides a direct connection between the capacitor lower electrode and an impurity diffusion layer of the first field-effect transistor. A second contact plug formed in the protective insulating film provides a direct connection between the capacitor upper electrode and an impurity diffusion layer of the second field-effect transistor.
-
公开(公告)号：US20050167725A1
公开(公告)日：2005-08-04
申请号：US11035175
申请日：2005-01-14
申请人： Yoshihisa Nagano , Takumi Mikawa
发明人： Yoshihisa Nagano , Takumi Mikawa
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8239 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/00
CPC分类号： H01L28/65 , H01L27/10852 , H01L28/57 , H01L28/75
摘要： A capacitor element is provided which is composed of a lower electrode, an upper electrode formed in opposing relation to the lower electrode, and a capacitor dielectric film made of a ferroelectric material or a high dielectric material and formed between the lower and upper electrodes. The lower electrode, the capacitor dielectric film, and the upper electrode are formed in a region extending at least from within a hole provided in an interlayer insulating film having a first hydrogen barrier film disposed on the upper surface thereof toward a position above the hole. A second hydrogen barrier film in contact with the first hydrogen barrier film is disposed to cover the upper surface of the upper electrode and the side surface of the portion of the upper electrode which has been formed above the hole.
摘要翻译： 提供一种电容器元件，其由下电极，与下电极相对形成的上电极和由电介质材料或高电介质材料制成并形成在下电极和上电极之间的电容器电介质膜组成。 下电极，电容器电介质膜和上电极形成在至少从设置在其上表面上的第一氢阻挡膜朝向孔上方的位置的层间绝缘膜的孔内延伸的区域中。 与第一氢阻挡膜接触的第二氢阻挡膜设置成覆盖上电极的上表面和形成在孔上方的上电极部分的侧表面。
-
公开(公告)号：US06809000B2
公开(公告)日：2004-10-26
申请号：US09797987
申请日：2001-03-05
申请人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
发明人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
IPC分类号： H01L2120
CPC分类号： H01L28/55
摘要： The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.
摘要翻译： 本发明的半导体器件包括形成在基板上的电容器器件，其包括电容式下电极，由绝缘金属氧化物膜制成的电容绝缘膜和电容上电极。 在电容器装置上形成具有到达电容上电极的开口的层间绝缘膜。 在层间绝缘膜上形成包括钛膜的金属互连，以便通过开口与电容上电极电连接。 在电容上电极和金属互连之间形成具有导电性的防扩散膜，以防止构成金属互连的钛膜的钛原子通过电容上电极并扩散到电容绝缘膜。
-
公开(公告)号：US06441420B1
公开(公告)日：2002-08-27
申请号：US09576971
申请日：2000-05-24
申请人： Yoshihisa Nagano , Yasuhiro Uemoto
发明人： Yoshihisa Nagano , Yasuhiro Uemoto
IPC分类号： H01L2994
CPC分类号： H01L27/10894 , H01L27/10852 , H01L27/11507 , H01L27/11509 , H01L28/55
摘要： A protective insulating film is deposited over first and second field-effect transistors formed on a semiconductor substrate. A capacitor composed of a capacitor lower electrode, a capacitor insulating film composed of an insulating metal oxide film, and a capacitor upper electrode is formed on the protective insulating film. A first contact plug formed in the protective insulating film provides a direct connection between the capacitor lower electrode and an impurity diffusion layer of the first field-effect transistor. A second contact plug formed in the protective insulating film provides a direct connection between the capacitor upper electrode and an impurity diffusion layer of the second field-effect transistor.
-
-
-
-
-
-
-
-
-
搜索结果
68 条记录 (耗时 0.022 秒)
