公开(公告)号：US4795529A

公开(公告)日：1989-01-03

申请号：US109318

申请日：1987-10-19

申请人： Yoshinao Kawasaki ,  Hironobu Kawahara ,  Yutaka Kakehi ,  Kado Hirobe ,  Katsuyoshi Kudo

发明人： Yoshinao Kawasaki ,  Hironobu Kawahara ,  Yutaka Kakehi ,  Kado Hirobe ,  Katsuyoshi Kudo

IPC分类号： H05H1/02 ,  C23C16/517 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/306 ,  B05D3/06 ,  B44C1/22 ,  C23C14/00

CPC分类号： H01J37/32706 ,  C23C16/517 ,  H01L21/30655 ,  H01J2237/3348

摘要： This invention relates to a plasma treating method and apparatus therefor. The plasma treating method comprises rendering a gas having a critical potential plasmic under a reduced pressure and changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. The plasma treating apparatus comprises means for rendering a gas having a critical potential plasmic under a reduced pressure and means for changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. According to the present invention, the etching step and the film formation step can be carried out alternately and the plasma treating time can be shortened.

摘要翻译： 本发明涉及等离子体处理方法及其装置。 等离子体处理方法包括在减压下制备具有临界电位等离子体的气体，并且改变用于将等离子体中的离子加速到插入临界电位的样品的加速电压。 等离子体处理装置包括用于在减压下形成具有临界电位等离子体的气体的装置，以及用于改变用于将等离子体中的离子加速到插入临界电位的样品的加速电压的装置。 根据本发明，蚀刻步骤和成膜步骤可以交替进行，并且可以缩短等离子体处理时间。

公开(公告)号：US5770100A

公开(公告)日：1998-06-23

申请号：US662142

申请日：1996-06-12

申请人： Ryooji Fukuyama ,  Makoto Nawata ,  Yutaka Kakehi ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Yoshimi Torii ,  Akira Kawaraya ,  Yoshie Sato

发明人： Ryooji Fukuyama ,  Makoto Nawata ,  Yutaka Kakehi ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Yoshimi Torii ,  Akira Kawaraya ,  Yoshie Sato

IPC分类号： C23F4/00 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01L21/02071 ,  C23F4/00 ,  Y10S438/906 ,  Y10T428/12528 ,  Y10T428/12736 ,  Y10T428/31678

摘要： A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.

公开(公告)号：US06329298B1

公开(公告)日：2001-12-11

申请号：US08986643

申请日：1997-12-08

申请人： Ryooji Fukuyama ,  Makoto Nawata ,  Yutaka Kakehi ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Yoshimi Torii ,  Akira Kawaraya ,  Yoshie Sato

发明人： Ryooji Fukuyama ,  Makoto Nawata ,  Yutaka Kakehi ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Yoshimi Torii ,  Akira Kawaraya ,  Yoshie Sato

IPC分类号： H01L213065

CPC分类号： H01L21/02071 ,  C23F4/00 ,  Y10S438/906 ,  Y10T428/12528 ,  Y10T428/12736 ,  Y10T428/31678

摘要： A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.

摘要翻译： 一种对含铝布线膜赋予高耐腐蚀性能的蚀刻后处理方法。 使用卤素型气体蚀刻的含铝布线材料样品用具有氧成分的气体的等离子体进行处理，并且在含铝布线材料上形成的抗蚀剂与氧气反应并除去。 此外，使用具有氢成分的气体产生等离子体，或者该气体在样品表面液化成液滴，使得卤素成分（Cl，Br等）通过蚀刻处理粘附到含铝布线材料 与氢反应，并有效地以氯化氢（HCl）或溴化氢（HBr）的形式除去。 这使得可以获得具有高防蚀性能的含铝布线材料。

公开(公告)号：US5556714A

公开(公告)日：1996-09-17

申请号：US315260

申请日：1994-09-29

申请人： Ryooji Fukuyama ,  Makoto Nawata ,  Yutaka Kakehi ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Yoshimi Torii ,  Akira Kawaraya ,  Yoshie Sato

发明人： Ryooji Fukuyama ,  Makoto Nawata ,  Yutaka Kakehi ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Yoshimi Torii ,  Akira Kawaraya ,  Yoshie Sato

IPC分类号： C23F4/00 ,  H01L21/02 ,  H01L21/3213 ,  B32B15/20

CPC分类号： H01L21/02071 ,  C23F4/00 ,  Y10S438/906 ,  Y10T428/12528 ,  Y10T428/12736 ,  Y10T428/31678

摘要： A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.

公开(公告)号：US5380397A

公开(公告)日：1995-01-10

申请号：US966849

申请日：1992-10-27

申请人： Ryooji Fukuyama ,  Makoto Nawata ,  Yutaka Kakehi ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Yoshimi Torii ,  Akira Kawaraya ,  Yoshie Sato

发明人： Ryooji Fukuyama ,  Makoto Nawata ,  Yutaka Kakehi ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Yoshimi Torii ,  Akira Kawaraya ,  Yoshie Sato

IPC分类号： C23F4/00 ,  H01L21/02 ,  H01L21/3213 ,  C23F11/00

CPC分类号： H01L21/02071 ,  C23F4/00 ,  Y10S438/906 ,  Y10T428/12528 ,  Y10T428/12736 ,  Y10T428/31678

摘要： A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.

摘要翻译： 一种对含铝布线膜赋予高耐腐蚀性能的蚀刻后处理方法。 使用卤素型气体蚀刻的含铝布线材料样品用具有氧成分的气体的等离子体进行处理，并且在含铝布线材料上形成的抗蚀剂与氧气反应并除去。 此外，使用具有氢成分的气体产生等离子体，或者该气体在样品表面液化成液滴，使得卤素成分（Cl，Br等）通过蚀刻处理粘附到含铝布线材料 与氢反应，并有效地以氯化氢（HCl）或溴化氢（HBr）的形式除去。 这使得可以获得具有高防蚀性能的含铝布线材料。

公开(公告)号：US5861601A

公开(公告)日：1999-01-19

申请号：US340337

申请日：1994-11-14

申请人： Yoshiaki Sato ,  Mitsuru Katamoto ,  Hironobu Kawahara ,  Minoru Soraoka ,  Tsuyoshi Umemoto ,  Hideki Kihara ,  Katsuyoshi Kudo ,  Tooru Yukimasa ,  Hirofumi Kakutani

发明人： Yoshiaki Sato ,  Mitsuru Katamoto ,  Hironobu Kawahara ,  Minoru Soraoka ,  Tsuyoshi Umemoto ,  Hideki Kihara ,  Katsuyoshi Kudo ,  Tooru Yukimasa ,  Hirofumi Kakutani

IPC分类号： H05H1/46 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  B23K10/00

CPC分类号： H01J37/32495 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32256 ,  H01J37/32678 ,  H01J37/32862

摘要： The present invention relates to a microwave plasma processing apparatus, suited for generating a plasma by using microwaves, and a processing method. Microwaves propagated through a circular waveguide are tuned in the space thereof by a microwave tuner that is installed to match the impedance, and are introduced in a uniform and most efficient state into a discharge block having a plasma-resistant inner surface that is enlarged in a tapered form through a microwave introduction window. Then, a processing gas controlled to a predetermined pressure by a gas supplying structure and gas evacuating structure is turned into a plasma which is more uniform and is more dense by interaction of a microwave electric field that is efficiently introduced and a magnetic field produced by a solenoid coil.

摘要翻译： 本发明涉及适用于通过使用微波产生等离子体的微波等离子体处理装置及其处理方法。 通过圆形波导传播的微波通过微波调谐器调谐，微波调谐器被安装成与阻抗匹配，并以均匀和最有效的状态被引入到具有等离子体的内表面的放电块中，该等离子体内表面在 锥形通过微波引入窗口。 然后，通过气体供给结构和气体排出结构控制到预定压力的处理气体变成等离子体，其通过有效引入的微波电场和由有效引入的磁场的磁场的相互作用而更均匀并且更致密 电磁线圈。

公开(公告)号：US5900162A

公开(公告)日：1999-05-04

申请号：US735668

申请日：1991-07-26

申请人： Hironobu Kawahara ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama

发明人： Hironobu Kawahara ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01J37/32623 ,  H01J37/32706 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/32136 ,  Y10S438/906

摘要： The present invention relates to a plasma etching method and apparatus, and more particularly to a plasma etching method and apparatus which are well suited for etching the samples of semiconductor device substrates, etc. In cooling a sample to a temperature not higher than 0.degree. C. which is a minimum temperature of water and subjecting the sample to an etching process with a gas plasma, an acceleration voltage which accelerates ions in the gas plasma toward the sample is repeatedly changed, whereby in a process based on low-temperature etching, an etching process producing no residue, being anisotropic and being highly selective is realized.

摘要翻译： 等离子体蚀刻方法和装置技术领域本发明涉及一种等离子体蚀刻方法和装置，更具体地涉及一种非常适合蚀刻半导体器件基板样品等离子体蚀刻方法和装置。在将样品冷却至不高于0℃的温度下 其是水的最低温度，并且利用气体等离子体对样品进行蚀刻处理，将气体等离子体中的离子加速到样品的加速电压重复变化，由此在基于低温蚀刻的工艺中， 实现不产生残留物，各向异性，高选择性的蚀刻工艺。

公开(公告)号：US5868854A

公开(公告)日：1999-02-09

申请号：US987171

申请日：1992-12-08

申请人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

发明人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

IPC分类号： C23F4/00 ,  H01J37/18 ,  H01L21/00 ,  H01L21/3213 ,  H01L21/461 ,  H01L21/677 ,  B08B6/00 ,  H01L21/302

CPC分类号： H01L21/32136 ,  C23F4/00 ,  H01J37/185 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67751

摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

公开(公告)号：US5007981A

公开(公告)日：1991-04-16

申请号：US477474

申请日：1990-02-09

申请人： Yoshinao Kawasaki ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Kazuo Nojiri ,  Yoshimi Torii

发明人： Yoshinao Kawasaki ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Kazuo Nojiri ,  Yoshimi Torii

IPC分类号： H01L21/302 ,  C23F4/00 ,  H01J37/18 ,  H01L21/00 ,  H01L21/027 ,  H01L21/30 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/677

CPC分类号： H01L21/67161 ,  C23F4/00 ,  H01J37/185 ,  H01L21/32136 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67751

摘要： A sample is plasma etched and then treated with a second plasma to remove residual corrosive compounds formed by the etching plasma. Removal of the residual corrosive compounds and prevention of corrosion is improved by washing the surface of the sample after the second plasma treatment with at least one liquid in order to effect at least one of (a) removal of the residual corrosive compounds and (b) passivation of the surface, the step of washing is followed by drying the sample.

公开(公告)号：US6077788A

公开(公告)日：2000-06-20

申请号：US469998

申请日：1995-06-06

申请人： Yoshinao Kawasaki ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Kazuo Nojiri ,  Yoshimi Torii

发明人： Yoshinao Kawasaki ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Kazuo Nojiri ,  Yoshimi Torii

IPC分类号： C23F4/00 ,  H01L21/00 ,  H01L21/677 ,  H01L21/302 ,  C23F1/02

CPC分类号： H01L21/67161 ,  C23F4/00 ,  H01L21/67028 ,  H01L21/67745 ,  H01L21/67751

摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus, the samples being selectively etched through use of a resist mask), (b) for removing (ashing) the resist mask, (c) for wet-processing of the samples and (d) for dry-processing the samples. Samples are passed sequentially from a supply cassette (containing a plurality of samples) to the plasma etching apparatus, through the other apparatus and to a discharge cassette (which can hold a plurality of the samples). At least two of the samples can be processed simultaneously in a path from (and including), the plasma etching apparatus to (and including) the wet-processing structure.

摘要翻译： 公开了用于处理样品的装置以及使用该装置的方法。 该装置包括用于处理样品的处理装置（例如，等离子体蚀刻装置，通过使用抗蚀剂掩模选择性地蚀刻样品），（b）去除（灰化）抗蚀剂掩模，（c） 处理样品和（d）干燥处理样品。 样品从供应盒（含有多个样品）顺序地通过另一个装置和放电盒（可以容纳多个样品）通过等离子体蚀刻装置。 至少两个样品可以在等离子体蚀刻装置（并且包括）湿法处理结构的路径中（并且包括）的同时进行处理。