公开(公告)号：US06239483B1

公开(公告)日：2001-05-29

申请号：US09557218

申请日：2000-04-25

申请人： Mitsuo Usami ,  Kunihiro Tsubosaki ,  Masaru Miyazaki

发明人： Mitsuo Usami ,  Kunihiro Tsubosaki ,  Masaru Miyazaki

IPC分类号： H01L2302

CPC分类号： G06K19/07728 ,  G06K19/07749 ,  G06K19/07779 ,  G06K19/07783 ,  G06K19/07784 ,  H01L23/49855 ,  H01L23/5388 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07811 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： Condenser (114), coil (115) and thin-thickness integrated circuit (312) are placed between the upper cover sheet (117) and the lower cover sheet (118), and adhesive (119) is filled into the space among them, whereby a card is fabricated. Because condenser (114), coil (115) and thin-thickness integrated circuit (312) are extremely thin, the resulting semiconductor device is strong to bending and highly reliable at a low cost.

摘要翻译： 冷凝器（114），线圈（115）和薄层集成电路（312）被放置在上覆盖片（117）和下覆盖片（118）之间，并且粘合剂（119）填充在它们之间的空间中， 由此制造卡。 由于冷凝器（114），线圈（115）和薄型集成电路（312）非常薄，因此所得到的半导体器件具有强的弯曲性并且以低成本高度可靠。

公开(公告)号：US06140697A

公开(公告)日：2000-10-31

申请号：US417466

申请日：1999-10-12

申请人： Mitsuo Usami ,  Kunihiro Tsubosaki ,  Masaru Miyazaki

发明人： Mitsuo Usami ,  Kunihiro Tsubosaki ,  Masaru Miyazaki

IPC分类号： B42D15/10 ,  G06K19/077 ,  H01L21/822 ,  H01L23/498 ,  H01L23/538 ,  H01L25/04 ,  H01L25/18 ,  H01L27/04 ,  H01L23/02

CPC分类号： G06K19/07728 ,  G06K19/07749 ,  G06K19/07779 ,  G06K19/07783 ,  G06K19/07784 ,  H01L23/49855 ,  H01L23/5388 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07811 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/3511

摘要： Condenser (114), coil (115) and thin-thickness integrated circuit (312) are placed between the upper cover sheet (117) and the lower cover sheet (118), and adhesive (119) is filled into the space among them, whereby a card is fabricated. Because condenser (114), coil (115) and thin-thickness integrated circuit (312) are extremely thin, the resulting semiconductor device is strong to bending and highly reliable at a low cost.

摘要翻译： 冷凝器（114），线圈（115）和薄层集成电路（312）被放置在上覆盖片（117）和下覆盖片（118）之间，并且粘合剂（119）填充在它们之间的空间中， 由此制造卡。 由于冷凝器（114），线圈（115）和薄型集成电路（312）非常薄，因此所得到的半导体器件具有强的弯曲性并且以低成本高度可靠。

公开(公告)号：US5986341A

公开(公告)日：1999-11-16

申请号：US930083

申请日：1998-02-09

申请人： Mitsuo Usami ,  Kunihiro Tsubosaki ,  Masaru Miyazaki

发明人： Mitsuo Usami ,  Kunihiro Tsubosaki ,  Masaru Miyazaki

IPC分类号： B42D15/10 ,  G06K19/077 ,  H01L21/822 ,  H01L23/498 ,  H01L23/538 ,  H01L25/04 ,  H01L25/18 ,  H01L27/04 ,  H01L23/34

CPC分类号： G06K19/07728 ,  G06K19/07749 ,  G06K19/07779 ,  G06K19/07783 ,  G06K19/07784 ,  H01L23/49855 ,  H01L23/5388 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07811 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/3511

摘要： A condenser, a coil and a thin-thickness integrated circuit are placed between an upper cover sheet and a lower cover sheet, and adhesive is filled into the space between them, whereby a card is fabricated. Because the condenser, the coil and the thin-thickness integrated circuit are extremely thin, the resulting semiconductor device is highly resistant to bending and highly reliable at a low cost.

摘要翻译： PCT No.PCT / JP96 / 01264 Sec。 371日期：1998年2月9日 102（e）1998年2月9日PCT PCT 1996年5月14日PCT公布。 公开号WO96 / 36496 日期：1996年11月21日在上盖板和下盖板之间放置冷凝器，线圈和薄壁集成电路，并且将粘合剂填充到它们之间的空间中，由此制造卡片。 由于冷凝器，线圈和薄型集成电路非常薄，因此所得到的半导体器件以低成本高度耐弯曲和高可靠性。

公开(公告)号：US06589818B2

公开(公告)日：2003-07-08

申请号：US10260409

申请日：2002-10-01

申请人： Mitsuo Usami ,  Kunihiro Tsubosaki ,  Kunihiko Nishi

发明人： Mitsuo Usami ,  Kunihiro Tsubosaki ,  Kunihiko Nishi

IPC分类号： H01L2144

CPC分类号： H01L21/6835 ,  H01L21/6836 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68322 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2224/29 ,  H01L2224/29007 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/8385 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01061 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/07811 ,  H01L2924/19043 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： A semiconductor chip (105′) and a substrate (102) are bonded with an organic adhesive layer (409) containing conductive particles (406), and a pad (405) and an electrode (412) are mutually, electrically connected through the conductive particles (406). The semiconductor chip (105′) is formed by contacting a semiconductor wafer (105) attached to a tape (107) with an etchant while rotating the semiconductor wafer (105) within an in-plane direction at a high speed or reciprocating the wafer (105) laterally to uniformly etch the semiconductor wafer (105) thereby reducing the thickness thereof, and dicing the thus reduced wafer. The resultant thin chip (105′) is hot-pressed by means of a heating head (106) for bonding on the substrate (102). In this way, a thin semiconductor chip can be formed stably at low costs and bonded on a substrate without causing any crack of the chip, thereby obtaining a semiconductor device which is unlikely to break owing to the bending stress from outside.

摘要翻译： 半导体芯片（105'）和基板（102）与包含导电颗粒（406）的有机粘合剂层（409）接合，并且焊盘（405）和电极（412）相互电连接，通过导电 颗粒（406）。 半导体芯片（105'）通过使附接到带（107）的半导体晶片（105）与蚀刻剂接触而形成，同时使半导体晶片（105）在平面内方向高速旋转或使晶片 105）以均匀蚀刻半导体晶片（105），从而减小其厚度，并切割由此减小的晶片。 所得到的薄片（105'）通过加热头（106）热压，用于在基底（102）上粘合。 以这种方式，可以以低成本稳定地形成薄的半导体芯片，并且结合在基板上而不引起芯片的任何裂纹，从而获得由于来自外部的弯曲应力而不可能破裂的半导体器件。

公开(公告)号：US06342434B1

公开(公告)日：2002-01-29

申请号：US09077548

申请日：1998-06-01

申请人： Toshio Miyamoto ,  Kunihiro Tsubosaki ,  Mitsuo Usami

发明人： Toshio Miyamoto ,  Kunihiro Tsubosaki ,  Mitsuo Usami

IPC分类号： H01L2146

CPC分类号： H01L21/6835 ,  G06K19/077 ,  G06K19/07749 ,  G06K19/0775 ,  G06K19/07779 ,  G06K19/07783 ,  H01L23/49855 ,  H01L23/5388 ,  H01L24/27 ,  H01L24/28 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/81903 ,  H01L2224/8319 ,  H01L2224/838 ,  H01L2224/83851 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/07811 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/01022 ,  H01L2924/3512

摘要： A semiconductor wafer is made thin without any cracks or warp under good workability. The semiconductor wafer thinning process includes the first step of preparing a carrier formed of a base and a suction pad provided on one surface of the base or formed of a base film with an adhesive, the second step of bonding a semiconductor wafer to the carrier in such a manner that a rear surface of the semiconductor wafer with no circuit elements formed therein is opposite to the carrier to form a wafer composite, and the third step of holding the carrier of the wafer composite with its semiconductor wafer side up and spin-coating an etchant on the rear surface of the semiconductor wafer thereby to make the semiconductor wafer thin.

摘要翻译： 半导体晶片制成薄而没有任何裂纹或翘曲的良好的可加工性。 半导体晶片减薄处理包括：准备由基底形成的载体和设置在基底的一个表面上或由基底膜与粘合剂形成的吸附垫的第一步骤，将半导体晶片接合到载体上的第二步骤 这样一种方式使得其中形成有电路元件的半导体晶片的后表面与载体相反以形成晶片复合物，并且第三步骤将晶片复合材料的载体保持在其半导体晶片侧面向上并且旋涂 在半导体晶片的后表面上形成蚀刻剂，从而使半导体晶片变薄。

公开(公告)号：US06589855B2

公开(公告)日：2003-07-08

申请号：US09991750

申请日：2001-11-26

申请人： Toshio Miyamoto ,  Kunihiro Tsubosaki ,  Mitsuo Usami

发明人： Toshio Miyamoto ,  Kunihiro Tsubosaki ,  Mitsuo Usami

IPC分类号： H01L21301

CPC分类号： H01L21/6835 ,  G06K19/077 ,  G06K19/07749 ,  G06K19/0775 ,  G06K19/07779 ,  G06K19/07783 ,  H01L23/49855 ,  H01L23/5388 ,  H01L24/27 ,  H01L24/28 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/81903 ,  H01L2224/8319 ,  H01L2224/838 ,  H01L2224/83851 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/07811 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/01022 ,  H01L2924/3512

摘要： The semiconductor wafer is made thin without any cracks and warp under good workability. The semiconductor wafer thinning process includes the first step of preparing a carrier 1 formed of a base 1a and a suction pad 1b provided on one surface of the base 1a or formed of a base film with an adhesive, the second step of bonding a semiconductor wafer to the carrier 1 in such a manner that a rear surface of the semiconductor wafer 2 with no circuit elements formed therein is opposite to the carrier to form a wafer composite 10, and the third step of holding the carrier of the wafer composite 10 with its semiconductor wafer 2 side up and spin-coating an etchant on the rear surface of the semiconductor wafer 2 thereby to make the semiconductor wafer 2 thin.

公开(公告)号：US5893746A

公开(公告)日：1999-04-13

申请号：US952344

申请日：1997-11-18

申请人： Mitsuo Usami ,  Kunihiro Tsubosaki ,  Kunihiko Nishi

发明人： Mitsuo Usami ,  Kunihiro Tsubosaki ,  Kunihiko Nishi

IPC分类号： H01L21/306 ,  H01L21/301 ,  H01L21/58 ,  H01L21/60 ,  H01L21/68 ,  H01L21/48

CPC分类号： H01L21/6835 ,  H01L21/6836 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68322 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2224/29 ,  H01L2224/29007 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/8385 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01061 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/07811 ,  H01L2924/19043

摘要： A semiconductor chip (105') and a substrate (102) are bonded with an organic adhesive layer (409) containing conductive particles (406), and a pad (405) and an electrode (412) are mutually, electrically connected through the conductive particles (406).The semiconductor chip (105') is formed by contacting a semiconductor wafer (105) attached to a tape (107) with an etchant while rotating the semiconductor wafer (105) within an in-plane direction at a high speed or reciprocating the wafer (105) laterally to uniformly etch the semiconductor wafer (105) thereby reducing the thickness thereof, and dicing the thus reduced wafer. The resultant thin chip (105') is hot-pressed by means of a heating head (106) for bonding on the substrate (102).In this way, a thin semiconductor chip can be formed stably at low costs and bonded on a substrate without causing any crack of the chip, thereby obtaining a semiconductor device which is unlikely to break owing to the bending stress from outside.

摘要翻译： PCT No.PCT / JP96 / 01263 Sec。 371日期：1997年11月18日 102（e）1997年11月18日日期PCT提交1996年5月14日PCT公布。 公开号WO96 / 36992 日期：1996年11月21日半导体芯片（105'）和基板（102）与包含导电颗粒（406）的有机粘合剂层（409）接合，并且焊盘（405）和电极（412） 通过导电颗粒（406）电连接。 半导体芯片（105'）通过使附接到带（107）的半导体晶片（105）与蚀刻剂接触而形成，同时使半导体晶片（105）在平面内方向高速旋转或使晶片 105）以均匀蚀刻半导体晶片（105），从而减小其厚度，并切割由此减小的晶片。 所得到的薄片（105'）通过加热头（106）热压，用于在基底（102）上粘合。 以这种方式，可以以低成本稳定地形成薄的半导体芯片，并且结合在基板上而不引起芯片的任何裂纹，从而获得由于来自外部的弯曲应力而不可能破裂的半导体器件。

公开(公告)号：US06573158B2

公开(公告)日：2003-06-03

申请号：US09991747

申请日：2001-11-26

申请人： Toshio Miyamoto ,  Kunihiro Tsubosaki ,  Mitsuo Usami

发明人： Toshio Miyamoto ,  Kunihiro Tsubosaki ,  Mitsuo Usami

IPC分类号： H01L2146

CPC分类号： H01L21/6835 ,  G06K19/077 ,  G06K19/07749 ,  G06K19/0775 ,  G06K19/07779 ,  G06K19/07783 ,  H01L23/49855 ,  H01L23/5388 ,  H01L24/27 ,  H01L24/28 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/81903 ,  H01L2224/8319 ,  H01L2224/838 ,  H01L2224/83851 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/07811 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/01022 ,  H01L2924/3512

摘要： The semiconductor wafer is made thin without any cracks and warp under good workability. The semiconductor wafer thinning process includes the first step of preparing a carrier 1 formed of a base 1a and a suction pad 1b provided on one surface of the base 1a or formed of a base film with an adhesive, the second step of bonding a semiconductor wafer to the carrier 1 in such a manner that a rear surface of the semiconductor wafer 2 with no circuit elements formed therein is opposite to the carrier to form a wafer composite 10, and the third step of holding the carrier of the wafer composite 10 with its semiconductor wafer 2 side up and spin-coating an etchant on the rear surface of the semiconductor wafer 2 thereby to make the semiconductor wafer 2 thin.

公开(公告)号：US06514796B2

公开(公告)日：2003-02-04

申请号：US09729191

申请日：2000-12-05

申请人： Mitsuo Usami ,  Kunihiro Tsubosaki ,  Kunihiko Nishi

发明人： Mitsuo Usami ,  Kunihiro Tsubosaki ,  Kunihiko Nishi

IPC分类号： H01L2144

CPC分类号： H01L21/6835 ,  H01L21/6836 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68322 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2224/29 ,  H01L2224/29007 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/8385 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01061 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/07811 ,  H01L2924/19043 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： A semiconductor chip (105′) and a substrate (102) are bonded with an organic adhesive layer (409) containing conductive particles (406), and a pad (405) and an electrode (412) are mutually, electrically connected through the conductive particles (406). The semiconductor chip (105′) is formed by contacting a semiconductor wafer (105) attached to a tape (107) with an etchant while rotating the semiconductor wafer (105) within an in-plane direction at a high speed or reciprocating the wafer (105) laterally to uniformly etch the semiconductor wafer (105) thereby reducing the thickness thereof, and dicing the thus reduced wafer. The resultant thin chip (105′) is hot-pressed by means of a heating head (106) for bonding on the substrate (102). In this way, a thin semiconductor chip can be formed stably at low costs and bonded on a substrate without causing any crack of the chip, thereby obtaining a semiconductor device which is unlikely to break owing to the bending stress from outside.

摘要翻译： 半导体芯片（105'）和基板（102）与包含导电颗粒（406）的有机粘合剂层（409）接合，并且焊盘（405）和电极（412）相互电连接，通过导电 颗粒（406）。半导体芯片（105'）通过使附接到带（107）的半导体晶片（105）与蚀刻剂接触而形成，同时以高速在平面内方向上旋转半导体晶片（105） 或者使晶片（105）横向往复移动以均匀蚀刻半导体晶片（105），从而减小其厚度，并切割由此减小的晶片。 所得到的薄片（105'）通过加热头（106）进行热压，用于在基板（102）上接合，以这种方式，可以以低成本稳定地形成薄的半导体芯片，并结合到基板 而不会引起芯片的任何裂纹，从而获得由于来自外部的弯曲应力而不可能破裂的半导体器件。

公开(公告)号：US07091620B2

公开(公告)日：2006-08-15

申请号：US11116209

申请日：2005-04-28

申请人： Chuichi Miyazaki ,  Yukiharu Akiyama ,  Masnori Shibamoto ,  Tomoaki Kudaishi ,  Ichiro Anjoh ,  Kunihiko Nishi ,  Asao Nishimura ,  Hideki Tanaka ,  Ryosuke Kimoto ,  Kunihiro Tsubosaki ,  Akio Hasebe ,  Takehiro Ohnishi ,  Noriou Shimada ,  Shuji Eguchi ,  Hiroshi Koyama ,  Akira Nagai ,  Masahiko Ogino

发明人： Chuichi Miyazaki ,  Yukiharu Akiyama ,  Masnori Shibamoto ,  Tomoaki Kudaishi ,  Ichiro Anjoh ,  Kunihiko Nishi ,  Asao Nishimura ,  Hideki Tanaka ,  Ryosuke Kimoto ,  Kunihiro Tsubosaki ,  Akio Hasebe ,  Takehiro Ohnishi ,  Noriou Shimada ,  Shuji Eguchi ,  Hiroshi Koyama ,  Akira Nagai ,  Masahiko Ogino

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/50 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/49572 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/4985 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06136 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/48465 ,  H01L2224/50 ,  H01L2224/85951 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05599

摘要： A semiconductor device includes a semiconductor chip formed with connection terminals, an elastic structure interposed between a main surface of the chip and a wiring substrate formed with wirings connected at first ends thereof to the connection terminals, and bump electrodes connected to the other ends of the wirings. The connection terminals may be at a center part or in peripheral part(s) of the chip main surface and both the elastic structure and wiring substrate are not provided at locations of connection terminals. A resin body seals at least the connection terminals and the exposed first ends of wirings (leads). In a scheme in which the connection terminals are located in a peripheral part of the chip main surface, the wiring substrate protrudes beyond the chip boundary where the connection terminals are arranged, and the resin body shape is restricted by the protruding part of the wiring substrate.