摘要:
After an Si wafer is anisotropically etched through an etching mask having an opening in an anisotropically etching solution, an etching face of the Si wafer emerged by the anisotropic etching is subjected to anodic oxidation by applying a positive voltage for anodic oxidation on the Si wafer. As a result, the etching face of the Si wafer is isotropically etched due to the anodic oxidation in the anisotropic etching solution. By the isotropic etching thus performed, a sharp corner formed at an end portion of a recess portion formed in the Si wafer by the anisotropic etching, is rounded. Because the isotropic etching reaction progresses very slowly in comparison with the anisotropic etching, control of the etching can be made easy and accurately. As a result, the thickness of the diaphragm can be prevented from being dispersed.
摘要:
An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part. In this case, the controller detects flowing current through the ammeter, and the point of time when the equilibrium state is obtained is the point of inflection of the detected current to the constant current after the peak thereof.
摘要:
An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part. In this case, the controller detects flowing current through the ammeter, and the point of time when the equilibrium state is obtained is the point of inflection of the detected current to the constant current after the peak thereof.
摘要:
To supply microfine liquid droplets to a microscopic space for enabling micromachining and provide a method and an apparatus for forming the microfine liquid droplets, there is provided a method and an apparatus for generating liquid fine particles, comprising atomizing a liquid, fractionating the atomized liquid particles to form microfine liquid droplets by inertial fractionation and contacting the microfine liquid droplets with a heated carrier gas, thereby thermally drying the liquid particles to form finer particles.
摘要:
A silicon substance is etched by using alkaline etchant containing additive (Cu, Pb, Mg). The content of the additive is controlled intentionally to provide desired etching quality during an etching operation.
摘要:
In a fine processing method for forming a silicon substrate, first, an oxynitride layer is formed on the silicon substrate. Thereafter, a silicon nitride layer is formed on the oxynitride layer and patterned into a predetermined shape to cause it to function as an etching mask. The silicon substrate is etched through the etching mask. In this case, because of the oxynitride layer formed between the silicon substrate and the silicon nitride layer, an interface between the silicon substrate and the silicon nitride layer is not easily eroded in the etching process. As a result, processing accuracy of the substrate is improved.
摘要:
A composite soft magnetic material having low magnetostriction and high magnetic flux density contains: pure iron-based composite soft magnetic powder particles that are subjected to an insulating treatment by a Mg-containing insulating film or a phosphate film; and Fe—Si alloy powder particles including 11%-16% by mass of Si. A ratio of an amount of the Fe—Si alloy powder particles to a total amount is in a range of 10%-60% by mass. A method for producing the composite soft magnetic material comprises the steps of: mixing a pure iron-based composite soft magnetic powder, and the Fe—Si alloy powder in such a manner that a ratio of the Fe—Si alloy powder to a total amount is in a range of 10%-60%; subjecting a resultant mixture to compression molding; and subjecting a resultant molded body to a baking treatment in a non-oxidizing atmosphere.
摘要:
A CO2 recovery device includes a cooling tower including a cooling unit for bringing the flue gas, which contains CO2, into contact with water so as to cool flue gas; a CO2-absorbing unit for bringing the flue gas into contact with a CO2 absorbent (lean solution) so as to remove CO2 from flue gas; and a regenerator including an absorbent regenerating unit for releasing CO2 from a rich solution so as to regenerate the CO2 absorbent. The CO2-absorbing unit includes: a cocurrent flow CO2-absorbing unit provided in a cocurrent flow CO2 absorber, for bringing the flue gas into contact with the CO2 absorbent in a cocurrent flow so as to remove CO2 from flue gas and a countercurrent CO2-absorbing unit provided in a CO2 absorber, for bringing the flue gas into contact with the CO2 absorbent in a countercurrent flow so as to remove CO2 from flue gas.
摘要:
The invention judges a total power supply/demand condition of the electricity consumers 2 as a whole according to an individual power supply/demand condition of electricity consumers 2, judges a total usable capacity of all batteries 17 according to a usable capacity of the batteries 17 of electric vehicles 10 parked at electricity consumers 2, obtains required charge/discharge amounts of all the batteries 17 according to a result of comparison of the total power supply/demand condition of the electricity consumers 2 as a whole with the total usable capacity of all the batteries 17, subjects the batteries 17 to charge/discharge controls according to the required charge/discharge amounts, the power supply/demand conditions of the electricity consumers 2, and the usable capacities of the batteries.
摘要:
In a transmission system capable of measuring packet loss ratio between arbitrary devices upon a transmission path without increasing bandwidth of an OAM frame band, a plurality of transmission devices which have been disposed upon a transmission path are provided with a frame analysis unit which receives data frames so as to analyze the type of the data frames, a count processing unit which stores the number of received frames included in the data frames into storage module provided beforehand, an output line end portion which outputs the data frames, and an OAM processing unit which calculates the packet loss ratio in the transmission path using the number of received frames. The frame analysis unit has a function which, if the data frames are OAM frames, copies the data frames and the OAM processing unit has a function which calculates the packet loss ratio using the copied OAM frames.