公开(公告)号：US20070227033A1

公开(公告)日：2007-10-04

申请号：US11692379

申请日：2007-03-28

申请人： Yoshiyuki Kobayashi ,  Itsuko Sakai ,  Tokuhisa Ohiwa

发明人： Yoshiyuki Kobayashi ,  Itsuko Sakai ,  Tokuhisa Ohiwa

IPC分类号： F26B5/04

CPC分类号： H01L21/67748 ,  H01L21/6831 ,  H01L21/6875

摘要： A substrate transferring apparatus capable of suppressing particles from being produced. The substrate processing apparatus (1) includes a processing chamber (12) in which a wafer (W) is housed, a transfer arm (17) for transferring the wafer to the processing chamber, and a susceptor (45) which is disposed in the processing chamber and on which the transferred wafer is mounted. An electrostatic chuck (55) having a plurality of protrusions (55a) is disposed In an upper portion of the susceptor. A transfer fork (25) having a plurality of protrusions (25a) for holding a wafer is disposed on a distal end of the transfer arm. These protrusions (25a) are provided in the transfer fork (25) such that wafer holding portions (81) by the protrusions (25a) are different from wafer holding protrusions (80) by the protrusions (55a) of the electrostatic chuck.

摘要翻译： 能够抑制产生颗粒的基板转印装置。 基板处理装置（1）包括容纳晶片（W）的处理室（12），将晶片传送到处理室的传送臂（17）和设置在该处理室中的基座（45） 处理室，并且在其上安装转移的晶片。 具有多个突起（55a）的静电卡盘（55）设置在基座的上部。 具有用于保持晶片的多个突起（25a）的传送叉（25）设置在传送臂的远端上。 这些突起（25a）设置在传送叉（25）中，使得通过突起（25a）的晶片保持部（81）不同于通过静电卡盘的突起（55a）的晶片保持突起（80） 。

公开(公告)号：US07767055B2

公开(公告)日：2010-08-03

申请号：US11292353

申请日：2005-12-02

申请人： Shinji Himori ,  Noriaki Imai ,  Katsumi Horiguchi ,  Takaaki Nezu ,  Shoichiro Matsuyama ,  Hiroki Matsumaru ,  Toshihiro Hayami ,  Kazuya Nagaseki ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Yoshikazu Sugiyasu

发明人： Shinji Himori ,  Noriaki Imai ,  Katsumi Horiguchi ,  Takaaki Nezu ,  Shoichiro Matsuyama ,  Hiroki Matsumaru ,  Toshihiro Hayami ,  Kazuya Nagaseki ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Yoshikazu Sugiyasu

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32697 ,  H01J37/32082

摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.

摘要翻译： 电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。 在腔室中，第一电极和第二电极相对设置。 设置RF电源以向第一或第二电极提供RF功率，以在第一和第二电极之间的等离子体产生区域内形成RF电场，以将处理气体转化为等离子体。 目标基板由第一和第二电极之间的支撑构件支撑，使得其工艺目标表面面向第二电极。 导电功能表面设置在等离子体产生区域周围的周围区域中，并且被接地以与DC等离子体耦合以扩展等离子体。

公开(公告)号：US07182879B2

公开(公告)日：2007-02-27

申请号：US10795296

申请日：2004-03-09

申请人： Itsuko Sakai ,  Tokuhisa Ohiwa

发明人： Itsuko Sakai ,  Tokuhisa Ohiwa

IPC分类号： C03C25/68

CPC分类号： C23C16/45593 ,  B08B7/0035 ,  C23C16/4405 ,  C23C16/52 ,  H01J37/3244 ,  Y02C20/30 ,  Y02P70/605

摘要： A plasma processing method, in which a process gas is introduced into an evacuated process chamber for subjecting the target object to a plasma processing. The plasma processing method is featured in that at least a part of the process gas exhausted from the process chamber is introduced again into the process chamber. A specified value is obtained by monitoring the state of the plasma of the process gas within the process chamber, and the introducing conditions of the process gas into the process chamber are controlled to adjust a predetermined property value to a regulated value.

摘要翻译： 一种等离子体处理方法，其中将处理气体引入到真空处理室中，以对目标物体进行等离子体处理。 等离子体处理方法的特征在于，将从处理室排出的处理气体的至少一部分再次引入处理室。 通过监测处理室内的处理气体的等离子体的状态来获得规定的值，并且控制处理气体进入处理室的引入条件以将预定的特性值调整到规定值。

公开(公告)号：US06689699B2

公开(公告)日：2004-02-10

申请号：US09955083

申请日：2001-09-19

申请人： Itsuko Sakai ,  Takayuki Sakai ,  Tokuhisa Ohiwa

发明人： Itsuko Sakai ,  Takayuki Sakai ,  Tokuhisa Ohiwa

IPC分类号： H01L2100

CPC分类号： C23C16/45593 ,  B08B7/0035 ,  C23C16/4412 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/31116 ,  Y10S438/909

摘要： There is disclosed a semiconductor processing apparatus comprising a process chamber treating a substrate, a process gas feeder feeding a process gas to the process chamber, a first vacuum pump exhausting the process chamber, a second vacuum pump inhaling gas on an exhaust side of the first vacuum pump, and a circulation path circulating at least a part of the process gas exhausted from the process chamber via the first vacuum pump into the process chamber, wherein the circulation path is provided with a dust trapping mechanism, the dust trapping mechanism being capable of substantially maintaining a conductance of the circulation path before and after the capture of dust.

摘要翻译： 公开了一种半导体处理装置，包括处理基板的处理室，将处理气体输送到处理室的处理气体进料器，排出处理室的第一真空泵，第一真空泵吸入第一 真空泵，以及使从处理室经由第一真空泵排出的处理气体的至少一部分循环到处理室的循环路径，其中循环路径设置有除尘机构，所述除尘机构能够 在捕获灰尘之前和之后基本保持循环路径的电导。

公开(公告)号：US20060118044A1

公开(公告)日：2006-06-08

申请号：US11292353

申请日：2005-12-02

申请人： Shinji Himori ,  Noriaki Imai ,  Katsumi Horiguchi ,  Takaaki Nezu ,  Shoichiro Matsuyama ,  Hiroki Matsumaru ,  Toshihiro Hayami ,  Kazuya Nagaseki ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Yoshikazu Sugiyasu

发明人： Shinji Himori ,  Noriaki Imai ,  Katsumi Horiguchi ,  Takaaki Nezu ,  Shoichiro Matsuyama ,  Hiroki Matsumaru ,  Toshihiro Hayami ,  Kazuya Nagaseki ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Yoshikazu Sugiyasu

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32697 ,  H01J37/32082

摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.

摘要翻译： 电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。 在腔室中，第一电极和第二电极相对设置。 设置RF电源以向第一或第二电极提供RF功率，以在第一和第二电极之间的等离子体产生区域内形成RF电场，以将处理气体转化为等离子体。 目标基板由第一和第二电极之间的支撑构件支撑，使得其工艺目标表面面向第二电极。 导电功能表面设置在等离子体产生区域周围的周围区域中，并且被接地以与DC等离子体耦合以扩展等离子体。

公开(公告)号：US06780278B2

公开(公告)日：2004-08-24

申请号：US09892481

申请日：2001-06-28

申请人： Hisataka Hayashi ,  Kazuhiro Tomioka ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Akihiro Kojima

发明人： Hisataka Hayashi ,  Kazuhiro Tomioka ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Akihiro Kojima

IPC分类号： H01L2100

CPC分类号： H01J37/32082 ,  H01J37/32532

摘要： A plasma processing apparatus comprises a grounded housing, a thin RF plate electrode, an opposite electrode facing the RF plate electrode, and a RF power source for applying a radio frequency to either the RF plate electrode or the opposite electrode to produce plasma between the two electrodes. If the radio frequency applied to the electrode is f (MHz), the parasitic capacity C (pF) between the grounded portion of the housing and a conductive portion through which the radio frequency propagates is less than 1210*f−0.9. The thickness of the RF plate electrode is 1 mm to 6 mm, and it is supported by a heat sink. The heat sink has a coolant passage in the proximity to the RF plate electrode. The heat sink also has a groove or a cavity in addition to the coolant passage, thereby reducing the value of the dielectric constant of the heat sink as a whole.

摘要翻译： 等离子体处理装置包括接地壳体，薄RF板电极，面对RF板电极的相对电极和用于将射频施加到RF板电极或相对电极的RF电源，以在两者之间产生等离子体 电极。 如果施加到电极的射频为f（MHz），则壳体的接地部分与射频传播的导电部分之间的寄生电容C（pF）小于1210×f <-0.9>。 RF板电极的厚度为1mm〜6mm，由散热片支撑。 散热器在RF板电极附近具有冷却剂通道。 除了冷却剂通道之外，散热器还具有凹槽或空腔，从而整体上降低了散热器的介电常数值。

公开(公告)号：US07628931B2

公开(公告)日：2009-12-08

申请号：US11197434

申请日：2005-08-05

申请人： Masashi Saito ,  Yusuke Hirayama ,  Itsuko Sakai ,  Tokuhisa Ohiwa

发明人： Masashi Saito ,  Yusuke Hirayama ,  Itsuko Sakai ,  Tokuhisa Ohiwa

IPC分类号： H01L21/00 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01L21/31116 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/67069 ,  H01L21/76802 ,  H01L21/76897

摘要： In order to facilitate control of a circulating gas, in a processing apparatus 100 having a showerhead 200 for supplying a processing gas into a processing chamber via a plurality of gas supply holes, a turbo pump 120 for evacuating the processing gas from the processing chamber 110 and a circulating gas piping 150 for returning at least a portion (circulating gas Q2) of the exhaust gas evacuated from the processing chamber by the turbo pump to the showerhead, the showerhead is provided with a primary gas supply system that supplies a primary gas Q1 supplied from a gas source 140 into the processing chamber via a plurality of primary gas outlet holes h1 and a circulating gas supply system that supplies the circulating gas into the processing chamber via a plurality of circulating gas supply holes h2, with the primary gas supply system and the circulating gas supply system constituted as systems independent of each other. Since the primary gas and the circulating gas are allowed to become mixed only in the processing chamber, the circulating gas can be controlled with a greater degree of ease without having to implement pressure control.

摘要翻译： 为了便于循环气体的控制，在具有用于经由多个气体供给孔向处理室供给处理气体的喷淋头200的处理装置100中，用于从处理室110排出处理气体的涡轮泵120 以及循环气体管道150，用于使由涡轮泵将从处理室排出的废气的至少一部分（循环气体Q2）返回到喷头，循环气体管道150设置有主气体供给系统， 从气体源140经由多个主要气体出口孔h1和循环气体供给系统从气体源140供给到处理室，循环气体供给系统通过多个循环气体供给孔h2将循环气体供给到处理室，主气体供给系统 循环气体供给系统构成为彼此独立的系统。 由于一次气体和循环气体只能在处理室中混合，所以可以更容易地控制循环气体，而无需实施压力控制。

公开(公告)号：US07022616B2

公开(公告)日：2006-04-04

申请号：US10380428

申请日：2001-09-13

申请人： Takanori Mimura ,  Kazuya Nagaseki ,  Itsuko Sakai ,  Tokuhisa Ohiwa

发明人： Takanori Mimura ,  Kazuya Nagaseki ,  Itsuko Sakai ,  Tokuhisa Ohiwa

IPC分类号： H01L21/302

CPC分类号： H01L21/32137 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3266 ,  H01J2237/3347 ,  H01L21/3065 ,  H01L21/3081

摘要： This invention provides the following high-rate silicon etching method. An object to be processed W having a silicon region is so set as to be in contact with a process space in a process chamber that can be held in vacuum. An etching gas is introduced into the process space to form a gas atmosphere at a gas pressure of 13 Pa to 1,333 Pa (100 mTorr to 10 Torr). A plasma is generated upon application of RF power. In the plasma, the sum of the number of charged particles such as ions and the number of radicals increases, and etching of the silicon region is performed at a higher rate than in conventional etching.

摘要翻译： 本发明提供以下高速硅蚀刻方法。 具有硅区域的待处理物体W被设定为与可以保持在真空中的处理室中的处理空间接触。 将蚀刻气体引入工艺空间，形成气压为13Pa〜1333Pa（100mTorr〜10Torr）的气体气氛。 在施加RF功率时产生等离子体。 在等离子体中，离子的带电粒子数和自由基的数量之和增加，并且以比常规蚀刻更高的速度进行硅区的蚀刻。

公开(公告)号：US20050279731A1

公开(公告)日：2005-12-22

申请号：US11197434

申请日：2005-08-05

申请人： Masashi Saito ,  Yusuke Hirayama ,  Itsuko Sakai ,  Tokuhisa Ohiwa

发明人： Masashi Saito ,  Yusuke Hirayama ,  Itsuko Sakai ,  Tokuhisa Ohiwa

IPC分类号： H01L21/3065 ,  B44C1/22 ,  H01L21/00

CPC分类号： H01L21/31116 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/67069 ,  H01L21/76802 ,  H01L21/76897

摘要： In order to facilitate control of a circulating gas, in a processing apparatus 100 having a showerhead 200 for supplying a processing gas into a processing chamber via a plurality of gas supply holes, a turbo pump 120 for evacuating the processing gas from the processing chamber 110 and a circulating gas piping 150 for returning at least a portion (circulating gas Q2) of the exhaust gas evacuated from the processing chamber by the turbo pump to the showerhead, the showerhead is provided with a primary gas supply system that supplies a primary gas Q1 supplied from a gas source 140 into the processing chamber via a plurality of primary gas outlet holes h1 and a circulating gas supply system that supplies the circulating gas into the processing chamber via a plurality of circulating gas supply holes h2, with the primary gas supply system and the circulating gas supply system constituted as systems independent of each other. Since the primary gas and the circulating gas are allowed to become mixed only in the processing chamber, the circulating gas can be controlled with a greater degree of ease without having to implement pressure control.

摘要翻译： 为了便于循环气体的控制，在具有用于经由多个气体供给孔向处理室供给处理气体的喷淋头200的处理装置100中，用于从处理室110排出处理气体的涡轮泵120 以及循环气体管道150，用于将由涡轮泵从处理室排出的废气的至少一部分（循环气体Q 2）返回到喷头，循环气体管道150设置有主气体供给系统， Q 1经由多个主气体出口孔h 1和循环气体供给系统从气体源140供给到处理室，循环气体供给系统通过多个循环气体供给孔h 2将循环气体供给到处理室， 主要供气系统和循环供气系统构成为彼此独立的系统。 由于一次气体和循环气体只能在处理室中混合，所以可以更容易地控制循环气体，而无需实施压力控制。

公开(公告)号：US06782907B2

公开(公告)日：2004-08-31

申请号：US10101923

申请日：2002-03-21

申请人： Hiroyuki Kawasaki ,  Tokuhisa Ohiwa ,  Itsuko Sakai

发明人： Hiroyuki Kawasaki ,  Tokuhisa Ohiwa ,  Itsuko Sakai

IPC分类号： F17D104

CPC分类号： C23C16/45593 ,  C23C16/4412 ,  Y10S438/909 ,  Y10T137/0379 ,  Y10T137/0396 ,  Y10T137/85954 ,  Y10T137/86083

摘要： A gas recirculation flow control method and apparatus for use in an evacuation system having a vacuum chamber into which a gas is introduced, a first vacuum pump for exhausting the gas from the vacuum chamber and reducing the pressure in the vacuum chamber to a desired pressure, a second vacuum pump for performing evacuation to lower the back pressure of the first vacuum pump below an allowable back pressure, and a gas recirculation line for returning a part of gas exhausted from the first vacuum pump to the vacuum chamber. The recirculation flow rate Q2 of the gas returning to the vacuum chamber through the gas recirculation line is controlled by adjusting the differential pressure Pd−Pc in the gas recirculation line by varying the effective pumping speed of the second vacuum pump using the following relationship: Q2=C×(Pd−Pc) where: Q2 denotes the recirculation flow rate of the gas returning to the vacuum chamber through the gas recirculation line; Pc denotes the pressure in the vacuum chamber; Pd denotes the pressure in the upstream side of the gas recirculation line; and C denotes the conductance of the gas recirculation line.

摘要翻译： 一种在具有导入气体的真空室的抽空系统中使用的气体再循环流量控制方法和装置，用于从真空室排出气体并将真空室中的压力降低到所需压力的第一真空泵， 第二真空泵，用于进行排气以将第一真空泵的背压降低到允许的背压以下，以及气体再循环管线，用于将从第一真空泵排出的一部分气体返回到真空室。 通过使用以下关系改变第二真空泵的有效泵送速度，通过调节气体再循环管路中的压差Pd-Pc来控制通过气体再循环管路返回到真空室的气体的再循环流量Q2：其中 ：Q2表示通过气体再循环管线返回到真空室的气体的再循环流量; Pc表示真空室中的压力; Pd表示气体再循环管线的上游侧的压力; C表示气体再循环管路的电导率。