公开(公告)号：US06780278B2

公开(公告)日：2004-08-24

申请号：US09892481

申请日：2001-06-28

申请人： Hisataka Hayashi ,  Kazuhiro Tomioka ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Akihiro Kojima

发明人： Hisataka Hayashi ,  Kazuhiro Tomioka ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Akihiro Kojima

IPC分类号： H01L2100

CPC分类号： H01J37/32082 ,  H01J37/32532

摘要： A plasma processing apparatus comprises a grounded housing, a thin RF plate electrode, an opposite electrode facing the RF plate electrode, and a RF power source for applying a radio frequency to either the RF plate electrode or the opposite electrode to produce plasma between the two electrodes. If the radio frequency applied to the electrode is f (MHz), the parasitic capacity C (pF) between the grounded portion of the housing and a conductive portion through which the radio frequency propagates is less than 1210*f−0.9. The thickness of the RF plate electrode is 1 mm to 6 mm, and it is supported by a heat sink. The heat sink has a coolant passage in the proximity to the RF plate electrode. The heat sink also has a groove or a cavity in addition to the coolant passage, thereby reducing the value of the dielectric constant of the heat sink as a whole.

摘要翻译： 等离子体处理装置包括接地壳体，薄RF板电极，面对RF板电极的相对电极和用于将射频施加到RF板电极或相对电极的RF电源，以在两者之间产生等离子体 电极。 如果施加到电极的射频为f（MHz），则壳体的接地部分与射频传播的导电部分之间的寄生电容C（pF）小于1210×f <-0.9>。 RF板电极的厚度为1mm〜6mm，由散热片支撑。 散热器在RF板电极附近具有冷却剂通道。 除了冷却剂通道之外，散热器还具有凹槽或空腔，从而整体上降低了散热器的介电常数值。

公开(公告)号：US06846750B1

公开(公告)日：2005-01-25

申请号：US09604724

申请日：2000-06-28

申请人： Tokuhisa Ohiwa ,  Shoji Seta ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akihiro Kojima ,  Junko Ohuchi ,  Tsukasa Azuma ,  Hideo Ichinose ,  Ichiro Mizushima

发明人： Tokuhisa Ohiwa ,  Shoji Seta ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akihiro Kojima ,  Junko Ohuchi ,  Tsukasa Azuma ,  Hideo Ichinose ,  Ichiro Mizushima

IPC分类号： H01L21/302 ,  H01L21/033 ,  H01L21/30 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768 ,  H01L21/461

CPC分类号： H01L21/76802 ,  H01L21/0331 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/76816 ,  H01L21/7682

摘要： According to the present invention, there is provided a method of manufacturing a semiconductor device, where a soluble thin film which is soluble in a dissolving liquid is used. According to the method of the present invention, when a soluble thin film is formed between a film to be processed which should be patterned and a mask pattern, it becomes possible to remove the mask pattern by lifting-off. On the other hand, when the thin film is used for a dummy layer for forming an air wiring structure, the dummy layer can be removed without performing ashing using oxygen plasma.

摘要翻译： 根据本发明，提供一种制造半导体器件的方法，其中使用可溶于溶解液的可溶性薄膜。 根据本发明的方法，当在要被图案化的被处理膜和掩模图案之间形成可溶性薄膜时，可以通过剥离来去除掩模图案。 另一方面，当薄膜用于形成空气布线结构的虚拟层时，可以去除虚拟层而不用氧等离子体进行灰化。

公开(公告)号：US06433297B1

公开(公告)日：2002-08-13

申请号：US09531591

申请日：2000-03-20

申请人： Akihiro Kojima ,  Tokuhisa Ohiwa

发明人： Akihiro Kojima ,  Tokuhisa Ohiwa

IPC分类号： B23K1000

CPC分类号： H01J37/32082 ,  H01J37/32165

摘要： A plasma processing apparatus includes upper and lower electrodes opposed to each other in an evacuated vessel, a first high-frequency power supply for applying power having a frequency of 27.12 MHz to the lower electrode, a second high-frequency power supply for applying power having a frequency of 3.1 MHz thereto, and a dipole ring for forming a magnetic field between the upper and lower electrodes.

摘要翻译： 等离子体处理装置包括在真空容器中彼此相对的上下电极，向下电极施加频率为27.12MHz的第一高频电源，用于施加功率的第二高频电源， 其频率为3.1MHz，以及用于在上电极和下电极之间形成磁场的偶极环。

公开(公告)号：US08252193B2

公开(公告)日：2012-08-28

申请号：US12052522

申请日：2008-03-20

申请人： Akio Ui ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

发明人： Akio Ui ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

IPC分类号： G01R31/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165

摘要： A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.

摘要翻译： 基板等离子体处理装置包括在预定的真空条件下将内部抽真空的室; RF电极，其设置在所述室中并且构造成在其主表面上保持要处理的基板; 在所述室中与所述RF电极相对设置的对置电极; RF电压施加装置，用于向RF电极施加预定频率的RF电压; 以及脉冲电压施加装置，用于向RF电极施加脉冲电压以与RF电压叠加，并且包括用于控制施加脉冲电压的定时并且限定脉冲电压的暂停时段的控制器。

公开(公告)号：US20080237185A1

公开(公告)日：2008-10-02

申请号：US12052522

申请日：2008-03-20

申请人： Akio UI ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

发明人： Akio UI ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165

摘要： A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.

摘要翻译： 基板等离子体处理装置包括在预定的真空条件下将内部抽真空的室; RF电极，其设置在所述室中并且构造成在其主表面上保持要处理的基板; 在所述室中与所述RF电极相对设置的对置电极; RF电压施加装置，用于向RF电极施加预定频率的RF电压; 以及脉冲电压施加装置，用于向RF电极施加脉冲电压以与RF电压叠加，并且包括用于控制施加脉冲电压的定时并且限定脉冲电压的暂停时段的控制器。

公开(公告)号：US08545670B2

公开(公告)日：2013-10-01

申请号：US12209617

申请日：2008-09-12

申请人： Akihiro Kojima ,  Hisataka Hayashi ,  Akio Ui

发明人： Akihiro Kojima ,  Hisataka Hayashi ,  Akio Ui

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/32165

摘要： A plasma processing apparatus for processing a substrate using plasma includes a first electrode configured to mount the substrate, a second electrode disposed to face the first electrode with a predetermined space, a chamber containing the first electrode and the second electrode, the chamber being capable of adjusting an inside atmosphere, a first electric power source device configured to apply a first RF voltage for controlling a self-bias voltage generated on the substrate to the first electrode, the first electric power source device applying a substantially constant width and a substantially constant value in a peak-to-peak voltage of an RF voltage of a first frequency at intervals, and a second electric power source device configured to apply a second RF voltage of a second frequency for generating plasma between the first and second electrodes to one of the first electrode and the second electrode.

摘要翻译： 使用等离子体处理衬底的等离子体处理装置包括：被配置为安装衬底的第一电极，以预定空间设置为面对第一电极的第二电极，容纳第一电极和第二电极的腔室， 调整内部气氛的第一电源装置，被配置为向第一电极施加用于控制在基板上产生的自偏压的第一RF电压的第一电源装置，施加基本上恒定的宽度和基本恒定的值的第一电力源装置 在间隔的第一频率的RF电压的峰峰值电压中，以及第二电源装置，被配置为将第二频率的第二RF电压施加到第一和第二电极之间的等离子体之一 第一电极和第二电极。

公开(公告)号：US20090078678A1

公开(公告)日：2009-03-26

申请号：US12209617

申请日：2008-09-12

申请人： Akihiro Kojima ,  Hisataka Hayashi ,  Akio Ui

发明人： Akihiro Kojima ,  Hisataka Hayashi ,  Akio Ui

IPC分类号： B44C1/22 ,  C23F1/08

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/32165

摘要： A plasma processing apparatus for processing a substrate using plasma includes a first electrode configured to mount the substrate, a second electrode disposed to face the first electrode with a predetermined space, a chamber containing the first electrode and the second electrode, the chamber being capable of adjusting an inside atmosphere, a first electric power source device configured to apply a first RF voltage for controlling a self-bias voltage generated on the substrate to the first electrode, the first electric power source device applying a substantially constant width and a substantially constant value in a peak-to-peak voltage of an RF voltage of a first frequency at intervals, and a second electric power source device configured to apply a second RF voltage of a second frequency for generating plasma between the first and second electrodes to one of the first electrode and the second electrode.

摘要翻译： 使用等离子体处理衬底的等离子体处理装置包括：被配置为安装衬底的第一电极，以预定空间设置为面对第一电极的第二电极，容纳第一电极和第二电极的腔室， 调整内部气氛的第一电源装置，被配置为向第一电极施加用于控制在基板上产生的自偏压的第一RF电压的第一电源装置，施加基本上恒定的宽度和基本恒定的值的第一电力源装置 在间隔的第一频率的RF电压的峰峰值电压中，以及第二电源装置，被配置为将第二频率的第二RF电压施加到第一和第二电极之间的等离子体之一 第一电极和第二电极。

公开(公告)号：US20050009356A1

公开(公告)日：2005-01-13

申请号：US10843508

申请日：2004-05-12

申请人： Akihiro Kojima ,  Junko Ohuchi ,  Hisataka Hayashi

发明人： Akihiro Kojima ,  Junko Ohuchi ,  Hisataka Hayashi

IPC分类号： G03F7/42 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4763

CPC分类号： H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76831

摘要： A method of manufacturing a semiconductor device according to an aspect of the present invention includes: forming a low-k dielectric film above a semiconductor substrate; forming a resist pattern above the low-k dielectric film; etching the low-k dielectric film using the resist pattern as a mask; and stripping the resist pattern by plasma processing using ammonium ions.

摘要翻译： 根据本发明的一个方面的制造半导体器件的方法包括：在半导体衬底上形成低k电介质膜; 在低k电介质膜上形成抗蚀剂图案; 使用抗蚀剂图案作为掩模蚀刻低k电介质膜; 并通过使用铵离子的等离子体处理剥离抗蚀剂图案。

公开(公告)号：US09184357B2

公开(公告)日：2015-11-10

申请号：US13310384

申请日：2011-12-02

申请人： Yoshiaki Sugizaki ,  Hideki Shibata ,  Masayuki Ishikawa ,  Hideo Tamura ,  Tetsuro Komatsu ,  Akihiro Kojima

发明人： Yoshiaki Sugizaki ,  Hideki Shibata ,  Masayuki Ishikawa ,  Hideo Tamura ,  Tetsuro Komatsu ,  Akihiro Kojima

IPC分类号： H01L33/00 ,  H01L33/44 ,  H01L33/38 ,  H01L33/62 ,  H01L23/00 ,  H01L25/075 ,  H01L33/34 ,  H01L33/48 ,  H01L33/58

CPC分类号： H01L33/62 ,  H01L24/02 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/34 ,  H01L33/38 ,  H01L33/44 ,  H01L33/486 ,  H01L33/50 ,  H01L33/58 ,  H01L2224/02375 ,  H01L2224/0401 ,  H01L2224/05012 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/05571 ,  H01L2224/06132 ,  H01L2224/06152 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0066 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for manufacturing a light emitting device includes forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate. A dielectric film on a second surface side opposite to the first surface of the multilayer body is formed having first and second openings on a p-side electrode and an n-side electrode. A seed metal on the dielectric film and an exposed surface of the first and second openings form a p-side metal interconnect layer and an n-side metal interconnect layer separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal. A resin is formed in a space from which the seed metal is removed.

摘要翻译： 一种制造发光器件的方法包括：形成包括发光层的多层体，使得其第一表面与透光性基板的第一表面侧相邻。 在与p层电极和n侧电极之间形成有第一和第二开口的与多层体的第一表面相对的第二表面侧上的电介质膜形成。 电介质膜上的种子金属和第一和第二开口的暴露表面形成将种子金属分离成p侧金属和n侧籽晶的p侧金属互连层和n侧金属互连层 金属，通过去除一部分种子金属。 在除去种子金属的空间中形成树脂。

公开(公告)号：US08987020B2

公开(公告)日：2015-03-24

申请号：US13611393

申请日：2012-09-12

申请人： Akihiro Kojima ,  Yoshiaki Sugizaki

发明人： Akihiro Kojima ,  Yoshiaki Sugizaki

IPC分类号： H01L33/50 ,  H01L23/00 ,  H01L33/36 ,  H01L33/38 ,  H01L33/00 ,  H01L33/20 ,  H01L33/44 ,  H01L33/48 ,  H01L33/62

CPC分类号： H01L33/507 ,  H01L24/10 ,  H01L24/94 ,  H01L24/95 ,  H01L24/96 ,  H01L24/97 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/387 ,  H01L33/44 ,  H01L33/486 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/16 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2933/0041 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor light-emitting device includes forming a multilayer body including a first semiconductor layer having a first major surface and a second major surface which is an opposite side from the first major surface, a second semiconductor layer including a light-emitting layer laminated on the second major surface of the first semiconductor layer, and electrodes formed on the second major surface of the first semiconductor layer and on a surface of the second semiconductor layer on an opposite side from the first semiconductor layer. The method includes forming a groove through the first semiconductor layer. The method includes forming a phosphor layer on the first major surface and on a side surface of the first semiconductor layer in the groove.

摘要翻译： 一种制造半导体发光器件的方法，包括：形成多层体，该多层体包括具有第一主表面的第一半导体层和与第一主表面相反一侧的第二主表面，第二半导体层包括发光 层叠在第一半导体层的第二主表面上的电极以及形成在第一半导体层的第二主表面上的电极和在第二半导体层的与第一半导体层相反的一侧的表面上。 该方法包括通过第一半导体层形成沟槽。 该方法包括在槽的第一主表面和第一半导体层的侧表面上形成磷光体层。