利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

315 条记录 (耗时 0.036 秒)

    Chemical amplification, positive resist compositions
    2.
    发明授权
    Chemical amplification, positive resist compositions 有权
    化学放大，正光刻胶组合物

    公开(公告)号：US06682869B2

    公开(公告)日：2004-01-27

    申请号：US09799052

    申请日：2001-03-06

    申请人： Youichi Ohsawa ,  Jun Watanabe ,  Takanobu Takeda ,  Akihiro Seki

    发明人： Youichi Ohsawa ,  Jun Watanabe ,  Takanobu Takeda ,  Akihiro Seki

    IPC分类号： G03F7004

    CPC分类号： G03F7/0397 ,  G03F7/0392 ,  G03F7/0758 ,  Y10S430/106

    摘要： A chemical amplification, positive resist composition is provided comprising (A) a photoacid generator and (B) a resin which changes its solubility in an alkali developer under the action of acid and has substituents of the formula: Ph—(CH2)nOCH(CH2CH3)— wherein Ph is phenyl and n=1 or 2. The composition has many advantages including improved focal latitude, improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect left after coating, development and stripping, and improved pattern profile after development and is suited for microfabrication by any lithography, especially deep UV lithography.

    摘要翻译： 提供化学放大正性抗蚀剂组合物，其包含（A）光酸产生剂和（B）在酸的作用下改变其在碱显影剂中的溶解度并具有下式的取代基的树脂：Ph-（CH 2）n OCH（CH 2 CH 3 ） - 其中Ph是苯基并且n = 1或2.组合物具有许多优点，包括改进的焦点纬度，改进的分辨率，最小化的线宽变化或形状退化，即使在长期PED上，涂覆后剩余的最小化缺陷，显影和剥离， 并且在显影后改进的图案轮廓，并且适用于通过任何光刻，特别是深UV光刻的微细加工。

    Onium salts, photoacid generators, resist compositions, and patterning process
    5.
    发明授权
    Onium salts, photoacid generators, resist compositions, and patterning process 有权
    鎓盐，光酸产生剂，抗蚀剂组合物和图案化方法

    公开(公告)号：US06551758B2

    公开(公告)日：2003-04-22

    申请号：US09983154

    申请日：2001-10-23

    申请人： Youichi Ohsawa ,  Jun Watanabe ,  Kazunori Maeda

    发明人： Youichi Ohsawa ,  Jun Watanabe ,  Kazunori Maeda

    IPC分类号： G03F7004

    CPC分类号： C07C381/12 ,  C07C309/42 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/115 ,  Y10S430/122

    摘要： Onium salts of arylsulfonyloxybenzenesulfonate anions with iodonium or sulfonium cations are novel. A chemically amplified resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, improved focal latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.

    摘要翻译： 芳基磺酰氧基苯磺酸盐与碘鎓或锍阳离子的鎓盐是新颖的。 包含作为光致酸发生剂的鎓盐的化学放大抗蚀剂组合物特别适用于微细加工，特别是通过深紫外光刻技术，因为许多优点，包括改进的分辨率，改善的焦点纬度，最小化的线宽变化或甚至在长期PED下的形状退化 涂层，显影和剥离后的碎屑，以及显影后改进的图案轮廓。

    Resist compositions and patterning process
    6.
    发明授权
    Resist compositions and patterning process 有权
    抗蚀剂组合物和图案化工艺

    公开(公告)号：US06541179B2

    公开(公告)日：2003-04-01

    申请号：US09811695

    申请日：2001-03-20

    申请人： Jun Hatakeyama ,  Youichi Ohsawa ,  Tsunehiro Nishi ,  Jun Watanabe

    发明人： Jun Hatakeyama ,  Youichi Ohsawa ,  Tsunehiro Nishi ,  Jun Watanabe

    IPC分类号： G03F7004

    CPC分类号： G03F7/0382 ,  G03F7/0045 ,  G03F7/0395 ,  Y10S430/122

    摘要： A resist composition contains a base resin, a photoacid generator, and a solvent. The photoacid generator is a sulfonium salt of formula (1). R1 is a monovalent cyclic or bridgedring C3-20, hydrocarbon group, R2 is hydroxyl, nitro, halogen, or a straight, branched or cyclic monovalent C1-15 hydrocarbon group which may contain O, N, S or halogen atom, K− is a non-nucleophilic counter ion, x is equal to 1 or 2, and y is an integer of 0-3. The resist composition is sensitive to ArF excimer laser light, has good sensitivity and resolution, and forms a thick film which is advantageous in etching.

    摘要翻译： 抗蚀剂组合物含有基础树脂，光致酸产生剂和溶剂。 光致酸产生剂是式（1）的锍盐，R1是一价环状或桥连的C3-20，烃基，R2是羟基，硝基，卤素或直链，支链或环状的一价C1-15烃基，其可以 含有O，N，S或卤原子，K-是非亲核反离子，x等于1或2，y是0-3的整数。 抗蚀剂组合物对ArF准分子激光敏感，具有良好的灵敏度和分辨率，并形成有利于蚀刻的厚膜。

    Onium salts, photoacid generators, resist compositions, and patterning process
    7.
    发明授权
    Onium salts, photoacid generators, resist compositions, and patterning process 有权
    鎓盐，光酸产生剂，抗蚀剂组合物和图案化方法

    公开(公告)号：US06692893B2

    公开(公告)日：2004-02-17

    申请号：US09983155

    申请日：2001-10-23

    申请人： Youichi Ohsawa ,  Jun Watanabe ,  Takeshi Nagata ,  Jun Hatakeyama

    发明人： Youichi Ohsawa ,  Jun Watanabe ,  Takeshi Nagata ,  Jun Hatakeyama

    IPC分类号： G03C173

    CPC分类号： G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126

    摘要： Onium salts of arylsulfonyloxynaphthalenesulfonate anions with iodonium or sulfonium cations are novel. A chemically amplified resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, improved focal latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.

    摘要翻译： 芳基磺酰氧基萘磺酸盐与碘鎓或锍阳离子的鎓盐是新颖的。 包含作为光致酸发生剂的鎓盐的化学放大抗蚀剂组合物特别适用于微细加工，特别是通过深紫外光刻技术，因为许多优点，包括改进的分辨率，改善的焦点纬度，最小化的线宽变化或甚至在长期PED下的形状退化 涂层，显影和剥离后的碎屑，以及显影后改进的图案轮廓。

    Resist compositions and patterning process
    8.
    发明授权
    Resist compositions and patterning process 有权
    抗蚀剂组合物和图案化工艺

    公开(公告)号：US06338931B1

    公开(公告)日：2002-01-15

    申请号：US09637595

    申请日：2000-08-15

    申请人： Kazunori Maeda ,  Takeshi Nagata ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Jun Watanabe ,  Shigehiro Nagura

    发明人： Kazunori Maeda ,  Takeshi Nagata ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Jun Watanabe ,  Shigehiro Nagura

    IPC分类号： G03F7039

    CPC分类号： G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/106

    摘要： A chemical amplification type resist composition contains as a photoacid generator a sulfonyldiazomethane compound of the formula (1): wherein R1 is C1-10 alkyl or C6-14 aryl, R2 is C1-6 alkyl, G is SO2 or CO, R3 is C1-10 alkyl or C6-14 aryl, p is an integer of 0 to 4, q is an integer of 1 to 5, 1≦p+q≦5, n is 1 or 2, m is 0 or 1, and n+m=2. The composition is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.

    摘要翻译： 化学放大型抗蚀剂组合物含有式（1）的磺酰基二氮甲烷化合物作为光酸产生剂：其中R1是C1-10烷基或C6-14芳基，R2是C1-6烷基，G是SO2或CO，R3是C1 -10烷基或C6-14芳基，p为0〜4的整数，q为1〜5的整数，1 <= p + q <= 5，n为1或2，m为0或1， n + m = 2。 该组合物特别适用于微细加工，因为包括改进的分辨率，最小化的线宽变化或形状退化的许多优点，即使在长期PED，涂布后的最小化碎片，显影和剥离以及显影后的改进的图案轮廓方面也是如此。