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    Chemical amplification, positive resist compositions
    2.
    发明授权
    Chemical amplification, positive resist compositions 有权
    化学放大，正光刻胶组合物

    公开(公告)号：US06682869B2

    公开(公告)日：2004-01-27

    申请号：US09799052

    申请日：2001-03-06

    申请人： Youichi Ohsawa ,  Jun Watanabe ,  Takanobu Takeda ,  Akihiro Seki

    发明人： Youichi Ohsawa ,  Jun Watanabe ,  Takanobu Takeda ,  Akihiro Seki

    IPC分类号： G03F7004

    CPC分类号： G03F7/0397 ,  G03F7/0392 ,  G03F7/0758 ,  Y10S430/106

    摘要： A chemical amplification, positive resist composition is provided comprising (A) a photoacid generator and (B) a resin which changes its solubility in an alkali developer under the action of acid and has substituents of the formula: Ph—(CH2)nOCH(CH2CH3)— wherein Ph is phenyl and n=1 or 2. The composition has many advantages including improved focal latitude, improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect left after coating, development and stripping, and improved pattern profile after development and is suited for microfabrication by any lithography, especially deep UV lithography.

    摘要翻译： 提供化学放大正性抗蚀剂组合物，其包含（A）光酸产生剂和（B）在酸的作用下改变其在碱显影剂中的溶解度并具有下式的取代基的树脂：Ph-（CH 2）n OCH（CH 2 CH 3 ） - 其中Ph是苯基并且n = 1或2.组合物具有许多优点，包括改进的焦点纬度，改进的分辨率，最小化的线宽变化或形状退化，即使在长期PED上，涂覆后剩余的最小化缺陷，显影和剥离， 并且在显影后改进的图案轮廓，并且适用于通过任何光刻，特别是深UV光刻的微细加工。

    Chemically-amplified positive resist composition and patterning process thereof
    4.
    发明授权
    Chemically-amplified positive resist composition and patterning process thereof 有权
    化学扩增的正型抗蚀剂组合物及其构图工艺

    公开(公告)号：US08202677B2

    公开(公告)日：2012-06-19

    申请号：US12457327

    申请日：2009-06-08

    申请人： Takanobu Takeda ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Masaki Ohashi ,  Takeshi Kinsho

    发明人： Takanobu Takeda ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Masaki Ohashi ,  Takeshi Kinsho

    IPC分类号： G03F7/00 ,  G03F7/04 ,  G03F7/028 ,  G03F7/40

    CPC分类号： G03F7/0395 ,  G03F7/0045 ,  G03F7/0392 ,  Y10S430/114

    摘要： There is disclosed a chemically-amplified positive resist composition comprising, as main components, (A) a base polymer, which contains one or more kinds of a monomer unit represented by the following general formula (1) and the like, and is an alkali-insoluble polymer whose hydroxyl group is partly protected by an acetal group while alkali-soluble when deprotected by an acid catalyst, (B) a sulfonium salt containing a sulfonate anion, (C) a basic component, and (D) an organic solvent. In a lithography technology by a photo resist, an extremely high temporal stability is necessary. In addition, it must give a good pattern profile not dependent on a substrate and have a high resolution power. There can be provided a chemically-amplified positive resist composition which can solve these problems simultaneously, a resist patterning process using the same, and a method for producing a photo mask blank.

    摘要翻译： 公开了一种化学增幅正型抗蚀剂组合物，其包含作为主要成分的（A）基质聚合物，其包含一种或多种由以下通式（1）表示的单体单元等，并且为碱 （B）含有磺酸根阴离子的锍盐，（C）碱性成分和（D）有机溶剂，其羟基部分被缩醛基保护而碱溶性的不溶性聚合物。 在通过光刻胶的光刻技术中，需要非常高的时间稳定性。 另外，它必须给出不依赖于衬底并且具有高分辨率功率的良好图案轮廓。 可以提供能够同时解决这些问题的化学放大正性抗蚀剂组合物，使用其的抗蚀剂图案形成工艺以及制造光掩模坯料的方法。

    Chemically-amplified positive resist composition and patterning process thereof
    6.
    发明申请
    Chemically-amplified positive resist composition and patterning process thereof 有权
    化学扩增的正型抗蚀剂组合物及其构图工艺

    公开(公告)号：US20100009286A1

    公开(公告)日：2010-01-14

    申请号：US12457327

    申请日：2009-06-08

    申请人： Takanobu Takeda ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Masaki Ohashi ,  Takeshi Kinsho

    发明人： Takanobu Takeda ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Masaki Ohashi ,  Takeshi Kinsho

    IPC分类号： G03F7/004 ,  G03F7/20

    CPC分类号： G03F7/0395 ,  G03F7/0045 ,  G03F7/0392 ,  Y10S430/114

    摘要： There is disclosed a chemically-amplified positive resist composition comprising, as main components, (A) a base polymer, which contains one or more kinds of a monomer unit represented by the following general formula (1) and the like, and is an alkali-insoluble polymer whose hydroxyl group is partly protected by an acetal group while alkali-soluble when deprotected by an acid catalyst, (B) a sulfonium salt containing a sulfonate anion, (C) a basic component, and (D) an organic solvent. In a lithography technology by a photo resist, an extremely high temporal stability is necessary. In addition, it must give a good pattern profile not dependent on a substrate and have a high resolution power. There can be provided a chemically-amplified positive resist composition which can solve these problems simultaneously, a resist patterning process using the same, and a method for producing a photo mask blank.

    摘要翻译： 公开了一种化学增幅正型抗蚀剂组合物，其包含作为主要成分的（A）基质聚合物，其包含一种或多种由以下通式（1）表示的单体单元等，并且为碱 （B）含有磺酸根阴离子的锍盐，（C）碱性成分和（D）有机溶剂，其羟基部分被缩醛基保护而碱溶性的不溶性聚合物。 在通过光刻胶的光刻技术中，需要非常高的时间稳定性。 另外，它必须给出不依赖于衬底并且具有高分辨率功率的良好图案轮廓。 可以提供能够同时解决这些问题的化学放大正性抗蚀剂组合物，使用其的抗蚀剂图案形成工艺以及制造光掩模坯料的方法。

    Chemically amplified positive resist composition and patterning method
    9.
    发明授权
    Chemically amplified positive resist composition and patterning method 有权
    化学扩增阳性抗蚀剂组合物和图案化方法

    公开(公告)号：US06593056B2

    公开(公告)日：2003-07-15

    申请号：US09814049

    申请日：2001-03-22

    申请人： Takanobu Takeda ,  Jun Watanabe ,  Katsuya Takemura ,  Kenji Koizumi

    发明人： Takanobu Takeda ,  Jun Watanabe ,  Katsuya Takemura ,  Kenji Koizumi

    IPC分类号： G03F7039

    CPC分类号： G03F7/0045 ,  G03F7/027 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/40 ,  Y10S430/106

    摘要： A chemically amplified, positive resist composition comprising an organic solvent, a polymer having acid labile groups, a photoacid generator, a basic compound, and a compound containing at least two allyloxy groups is provided. The resist composition has a high sensitivity, resolution, dry etching resistance and process adaptability, and is improved in the slimming of a pattern film after development with an aqueous base solution. The resist composition is also applicable to the thermal flow process suited for forming a microsize contact hole pattern for the fabrication of VLSI.

    摘要翻译： 提供了包含有机溶剂，具有酸不稳定基团的聚合物，光酸产生剂，碱性化合物和含有至少两个烯丙氧基的化合物的化学增幅阳性抗蚀剂组合物。 抗蚀剂组合物具有高灵敏度，分辨率，耐干蚀刻性和工艺适应性，并且在碱性水溶液显影后使图案膜减薄得到改善。 抗蚀剂组合物也适用于适于形成用于制造VLSI的微尺寸接触孔图案的热流程。