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公开(公告)号：US06682869B2
公开(公告)日：2004-01-27
申请号：US09799052
申请日：2001-03-06
申请人： Youichi Ohsawa , Jun Watanabe , Takanobu Takeda , Akihiro Seki
发明人： Youichi Ohsawa , Jun Watanabe , Takanobu Takeda , Akihiro Seki
IPC分类号： G03F7004
CPC分类号： G03F7/0397 , G03F7/0392 , G03F7/0758 , Y10S430/106
摘要： A chemical amplification, positive resist composition is provided comprising (A) a photoacid generator and (B) a resin which changes its solubility in an alkali developer under the action of acid and has substituents of the formula: Ph—(CH2)nOCH(CH2CH3)— wherein Ph is phenyl and n=1 or 2. The composition has many advantages including improved focal latitude, improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect left after coating, development and stripping, and improved pattern profile after development and is suited for microfabrication by any lithography, especially deep UV lithography.
摘要翻译： 提供化学放大正性抗蚀剂组合物，其包含（A）光酸产生剂和（B）在酸的作用下改变其在碱显影剂中的溶解度并具有下式的取代基的树脂：Ph-（CH 2）n OCH（CH 2 CH 3 ） - 其中Ph是苯基并且n = 1或2.组合物具有许多优点，包括改进的焦点纬度，改进的分辨率，最小化的线宽变化或形状退化，即使在长期PED上，涂覆后剩余的最小化缺陷，显影和剥离， 并且在显影后改进的图案轮廓，并且适用于通过任何光刻，特别是深UV光刻的微细加工。
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公开(公告)号：US06838224B2
公开(公告)日：2005-01-04
申请号：US09799009
申请日：2001-03-06
申请人： Youichi Ohsawa , Jun Watanabe , Takanobu Takeda , Akihiro Seki
发明人： Youichi Ohsawa , Jun Watanabe , Takanobu Takeda , Akihiro Seki
CPC分类号： G03F7/0392 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/126
摘要： A chemical amplification, positive resist composition is provided comprising (A) a photoacid generator and (B) a resin which changes its solubility in an alkali developer under the action of acid and has substituents of the formula: C6H11—(CH2)nOCH(CH2CH3)— wherein C6H11 is cyclohexyl and n=0 or 1. The composition has many advantages including improved focal latitude, improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect left after coating, development and stripping, and improved pattern profile after development and is suited for microfabrication by any lithography, especially deep UV lithography.
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公开(公告)号：US06395446B1
公开(公告)日：2002-05-28
申请号：US09680481
申请日：2000-10-05
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/168 , Y10S430/106
摘要： A chemical amplification type resist composition contains as a photoacid generator a sulfonyldiazomethane compound of the formula (1): wherein R1 is C1-10 alkyl or C6-14 aryl, R2 is C1-6 alkyl, G is SO2 or CO, R3 is C1-10 alkyl or C6-14 aryl, p is an integer of 0 to 4, q is an integer of 1 to 5, 1≦p+q≦5, n is 1 or 2, m is 0 or 1, and n+m=2. The composition is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.
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4.发明申请Photoacid generators, chemically amplified resist compositions, and patterning process 有权光酸发生剂，化学放大抗蚀剂组合物和图案化工艺公开(公告)号：US20070287096A1
公开(公告)日：2007-12-13
申请号：US11806626
申请日：2007-06-01
申请人： Youichi Ohsawa , Katsuya Takemura , Akihiro Seki
发明人： Youichi Ohsawa , Katsuya Takemura , Akihiro Seki
IPC分类号： G03C1/00
CPC分类号： G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/40 , Y10S430/106 , Y10S430/111
摘要： A photoacid generator has formula (1) wherein R is H, F, Cl, nitro, alkyl or alkoxy, n is 0 or 1, m is 1 or 2, r is an integer of 0-4, and r′ is an integer of 0-5. A chemically amplified resist composition comprising the photoacid generator has advantages including a high resolution, focus latitude, long-term PED dimensional stability, and a satisfactory pattern profile shape. When the photoacid generator is combined with a resin having acid labile groups other than those of the acetal type, resolution and top loss are improved. The composition is suited for deep UV lithography.
摘要翻译： 光酸产生剂具有式（1）其中R为H，F，Cl，硝基，烷基或烷氧基，n为0或1，m为1或2，r为0-4的整数，r'为整数 的0-5。 包含光致酸发生器的化学放大抗蚀剂组合物具有包括高分辨率，聚焦纬度，长期PED尺寸稳定性和令人满意的图案轮廓形状的优点。 当光酸产生剂与具有不同于缩醛类型的酸不稳定基团的树脂组合时，分辨率和顶部损失得到改善。 该组合物适用于深紫外光刻。
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5.发明授权Photoacid generators, chemically amplified resist compositions, and patterning process 有权光酸发生剂，化学放大抗蚀剂组合物和图案化工艺公开(公告)号：US07494760B2
公开(公告)日：2009-02-24
申请号：US11806626
申请日：2007-06-01
申请人： Youichi Ohsawa , Katsuya Takemura , Akihiro Seki
发明人： Youichi Ohsawa , Katsuya Takemura , Akihiro Seki
IPC分类号： G03F7/004 , G03F7/30 , C07C249/04 , C07C251/32
CPC分类号： G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/40 , Y10S430/106 , Y10S430/111
摘要： A photoacid generator has formula (1) wherein R is H, F, Cl, nitro, alkyl or alkoxy, n is 0 or 1, m is 1 or 2, r is an integer of 0-4, and r′ is an integer of 0-5. A chemically amplified resist composition comprising the photoacid generator has advantages including a high resolution, focus latitude, long-term PED dimensional stability, and a satisfactory pattern profile shape. When the photoacid generator is combined with a resin having acid labile groups other than those of the acetal type, resolution and top loss are improved. The composition is suited for deep UV lithography.
摘要翻译： 光酸产生剂具有式（1）其中R为H，F，Cl，硝基，烷基或烷氧基，n为0或1，m为1或2，r为0-4的整数，r'为整数 的0-5。 包含光致酸发生器的化学放大抗蚀剂组合物具有包括高分辨率，聚焦纬度，长期PED尺寸稳定性和令人满意的图案轮廓形状的优点。 当光酸产生剂与具有不同于缩醛类型的酸不稳定基团的树脂组合时，分辨率和顶部损失得到改善。 该组合物适用于深紫外光刻。
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公开(公告)号：US06737214B2
公开(公告)日：2004-05-18
申请号：US09800512
申请日：2001-03-08
申请人： Takanobu Takeda , Osamu Watanabe , Kazuhiro Hirahara , Katsuya Takemura , Wataru Kusaki , Akihiro Seki
发明人： Takanobu Takeda , Osamu Watanabe , Kazuhiro Hirahara , Katsuya Takemura , Wataru Kusaki , Akihiro Seki
IPC分类号： G03C173
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/11 , Y10S430/111 , Y10S430/115
摘要： A chemical amplification positive resist composition comprising a polymeric mixture of a polyhydroxystyrene derivative having a Mw of 1000-500,000 and a copolymer of hydroxystyrene and (meth)acrylate having a Mw of 1000-500,000, as a base resin, has improved dry etching resistance, high sensitivity, high resolution, and process adaptability, and is suppressed in the slimming of pattern films after development with aqueous base.
摘要翻译： 包含Mw为1000-500,000的聚羟基苯乙烯衍生物和Mw为1000-500,000的羟基苯乙烯和（甲基）丙烯酸酯的共聚物的聚合物混合物作为基础树脂的化学放大正性抗蚀剂组合物具有改善的耐干蚀刻性， 高灵敏度，高分辨率和工艺适应性，并且在用碱性水溶液显影后抑制图案膜的减薄。
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公开(公告)号：US20080124653A1
公开(公告)日：2008-05-29
申请号：US11987333
申请日：2007-11-29
申请人： Akihiro Seki , Shigeo Tanaka , Katsuya Takemura , Tsunehiro Nishi
发明人： Akihiro Seki , Shigeo Tanaka , Katsuya Takemura , Tsunehiro Nishi
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/2041 , Y10S430/111
摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units. When processed by ArF lithography, the composition is improved in resolution and forms a pattern with a minimal line edge roughness.
摘要翻译： 正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。 树脂（A）是包含特定重复单元的聚合物。 当通过ArF光刻处理时，组合物的分辨率提高，并形成具有最小线边缘粗糙度的图案。
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公开(公告)号：US5768944A
公开(公告)日：1998-06-23
申请号：US665705
申请日：1996-06-18
申请人： Takeshi Inuzuka , Masashi Hattori , Tsutae Takeda , Akihiro Seki , Junichi Kurosaki , Masahiro Yamaguchi , Tamotsu Miyoshi
发明人： Takeshi Inuzuka , Masashi Hattori , Tsutae Takeda , Akihiro Seki , Junichi Kurosaki , Masahiro Yamaguchi , Tamotsu Miyoshi
CPC分类号： F16H59/0204 , F16H2061/242 , F16H59/044 , F16H59/10 , F16H61/22 , F16H61/24 , Y10T74/19251 , Y10T74/20018 , Y10T74/20085
摘要： A shift device includes a shift lever with an operating knob provided on the top thereof, a gate plate that defines shift patterns for an automatic shift mode and a manual shift mode, and a first rotational center shaft and a second rotational center shaft for allowing the shift lever to be rotated in a front-to-rear direction and in a right-to-left direction, respectively, in accordance with the shift pattern of the gate plate. The gate plate is disposed apart from the knob of the shift lever, with the rotational center shafts passing between the gate plate and the knob. The length of the shift lever can be reduced so as to achieve a short stroke and a large shift lever pivot angle.
摘要翻译： 换档装置包括：变速杆，其具有设置在其顶部的操作旋钮;门板，其限定用于自动变速模式和手动换挡模式的换档图案;以及第一旋转中心轴和第二旋转中心轴， 换档杆根据闸板的换档图案分别沿前后方向和从右到左的方向旋转。 门板与变速杆的旋钮分开设置，旋转中心轴在门板和旋钮之间通过。 可以减小变速杆的长度，以实现短行程和大的变速杆枢转角度。
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公开(公告)号：US07638260B2
公开(公告)日：2009-12-29
申请号：US11987333
申请日：2007-11-29
申请人： Akihiro Seki , Shigeo Tanaka , Katsuya Takemura , Tsunehiro Nishi
发明人： Akihiro Seki , Shigeo Tanaka , Katsuya Takemura , Tsunehiro Nishi
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/2041 , Y10S430/111
摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units. When processed by ArF lithography, the composition is improved in resolution and forms a pattern with a minimal line edge roughness.
摘要翻译： 正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。 树脂（A）是包含特定重复单元的聚合物。 当通过ArF光刻处理时，组合物的分辨率提高，并形成具有最小线边缘粗糙度的图案。
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公开(公告)号：US08871427B2
公开(公告)日：2014-10-28
申请号：US13526057
申请日：2012-06-18
IPC分类号： G03F7/004 , G03F7/20 , H01L21/027 , C07C381/12 , G03F7/11 , C08F220/34 , G03F7/039 , G03F7/32 , C08F220/36
CPC分类号： G03F7/0397 , C07C381/12 , C08F220/34 , C08F220/36 , G03F7/11 , G03F7/20 , G03F7/2041 , G03F7/32 , H01L21/0273 , Y10S430/114 , Y10S430/115
摘要： There is disclosed a positive resist composition comprising (A) a resin having repeating units shown by the following general formulae (1) and (2) as repeating units that contain acid labile groups and being capable of increasing its alkaline solubility by an acid, (B) a photoacid generator, (C) a compound shown by the following general formula (3), and (D) a solvent. There can be a positive resist composition having high resolution, and at the same time giving an excellent pattern profile; and a patterning process in which an immersion lithography is carried out using a formed top coat.
摘要翻译： 公开了一种正型抗蚀剂组合物，其包含（A）具有以下通式（1）和（2）所示的重复单元的树脂作为含有酸不稳定基团并且能够通过酸增加其碱溶性的重复单元（ B）光致酸发生剂，（C）下述通式（3）所示的化合物和（D）溶剂。 可以具有高分辨率的正性抗蚀剂组合物，同时具有优异的图案图案; 以及使用形成的表面涂层进行浸渍光刻的图案化工艺。
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