公开(公告)号：US06338931B1

公开(公告)日：2002-01-15

申请号：US09637595

申请日：2000-08-15

申请人： Kazunori Maeda ,  Takeshi Nagata ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Jun Watanabe ,  Shigehiro Nagura

发明人： Kazunori Maeda ,  Takeshi Nagata ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Jun Watanabe ,  Shigehiro Nagura

IPC分类号： G03F7039

CPC分类号： G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/106

摘要： A chemical amplification type resist composition contains as a photoacid generator a sulfonyldiazomethane compound of the formula (1): wherein R1 is C1-10 alkyl or C6-14 aryl, R2 is C1-6 alkyl, G is SO2 or CO, R3 is C1-10 alkyl or C6-14 aryl, p is an integer of 0 to 4, q is an integer of 1 to 5, 1≦p+q≦5, n is 1 or 2, m is 0 or 1, and n+m=2. The composition is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.

摘要翻译： 化学放大型抗蚀剂组合物含有式（1）的磺酰基二氮甲烷化合物作为光酸产生剂：其中R1是C1-10烷基或C6-14芳基，R2是C1-6烷基，G是SO2或CO，R3是C1 -10烷基或C6-14芳基，p为0〜4的整数，q为1〜5的整数，1 <= p + q <= 5，n为1或2，m为0或1， n + m = 2。 该组合物特别适用于微细加工，因为包括改进的分辨率，最小化的线宽变化或形状退化的许多优点，即使在长期PED，涂布后的最小化碎片，显影和剥离以及显影后的改进的图案轮廓方面也是如此。

公开(公告)号：US06440634B1

公开(公告)日：2002-08-27

申请号：US09637363

申请日：2000-08-15

申请人： Youichi Ohsawa ,  Jun Watanabe ,  Wataru Kusaki ,  Satoshi Watanabe ,  Takeshi Nagata ,  Shigehiro Nagura

发明人： Youichi Ohsawa ,  Jun Watanabe ,  Wataru Kusaki ,  Satoshi Watanabe ,  Takeshi Nagata ,  Shigehiro Nagura

IPC分类号： G03F7004

CPC分类号： C07C309/73 ,  C07C309/71 ,  C07C381/12 ,  C07C2602/42 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/115 ,  Y10S430/122

摘要： Onium salts of the formula (1) are novel. R1 is C1-10 alkyl or C6-14 aryl, R2 is H or C1-6 alkyl, p is an integer of 1 to 5, q is an integer of 0 to 4, p+q=5, R3 is C1-10 alkyl or C6-14 aryl, M is a sulfur or iodine atom, and “a” is equal to 3 or 2. A chemical amplification type resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect after coating, development and stripping, and improved pattern profile after development.

摘要翻译： 式（1）的鎓盐是新的，R 1是C 1-10烷基或C 6-14芳基，R 2是H或C 1-6烷基，p是1至5的整数，q是0至4的整数， p + q = 5，R3是C1-10烷基或C6-14芳基，M是硫或碘原子，“a”等于3或2.包含鎓盐作为光酸的化学放大型抗蚀剂组合物 发生器适用于微细加工，特别是通过深紫外光刻，因为许多优点，包括改进的分辨率，最小化线宽变化或形状退化，即使长期PED，最小化涂层后的缺陷，显影和剥离，以及改进的图案轮廓。

公开(公告)号：US06416928B1

公开(公告)日：2002-07-09

申请号：US09680491

申请日：2000-10-05

申请人： Youichi Ohsawa ,  Jun Watanabe ,  Satoshi Watanabe ,  Shigehiro Nagura

发明人： Youichi Ohsawa ,  Jun Watanabe ,  Satoshi Watanabe ,  Shigehiro Nagura

IPC分类号： G03F7004

CPC分类号： C07C381/12 ,  C07C309/32 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/115 ,  Y10S430/122

摘要： Onium salts of substituted phenylmethylbenzene-sulfonate anions with iodonium or sulfonium cations are novel. A chemically amplified resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect after coating, development and peeling, and improved pattern profile after development.

摘要翻译： 取代的苯甲基苯磺酸盐阴离子与碘鎓或锍阳离子的鎓盐是新颖的。 包含作为光致酸发生剂的鎓盐的化学放大抗蚀剂组合物特别适用于微细加工，特别是通过深紫外光刻技术，适用于微细加工，因为即使长期PED，涂布后的最小化缺陷，包括改进的分辨率，最小化的线宽变化或形状劣化， 开发和剥皮，改进后的图案轮廓。

公开(公告)号：US5847218A

公开(公告)日：1998-12-08

申请号：US811530

申请日：1997-03-04

申请人： Youichi Ohsawa ,  Satoshi Watanabe ,  Junji Shimada ,  Katsuya Takemura ,  Shigehiro Nagura ,  Toshinobu Ishihara

发明人： Youichi Ohsawa ,  Satoshi Watanabe ,  Junji Shimada ,  Katsuya Takemura ,  Shigehiro Nagura ,  Toshinobu Ishihara

IPC分类号： C07C381/12 ,  G03F7/004 ,  G03F7/029 ,  G03F7/039 ,  H01L21/027 ,  C07C211/44

CPC分类号： C07C381/12 ,  G03F7/0045

摘要： The invention provides a novel sulfonium salt having a substituted or unsubstituted arylsulfonate anion. The novel sulfonium salt minimizes the influence of deactivation by basic compounds not only at a resist surface, but also at a resist-substrate interface, assists a resist to be configured to a definite pattern profile. When the sulfonium salt has an acid labile group, it is effective for increasing the dissolution contrast between exposed and unexposed areas. The sulfonium salt is useful in a chemically amplified positive resist composition which lends itself to fine patterning and features high resolution.

摘要翻译： 本发明提供了具有取代或未取代的芳基磺酸根阴离子的新型锍盐。 新型锍盐不仅在抗蚀剂表面，而且在抗蚀剂 - 基材界面处，使碱性化合物失活的影响最小化，有助于将抗蚀剂配置成确定的图案轮廓。 当锍盐具有酸不稳定基团时，对于增加暴露区域和未暴露区域之间的溶解度对比度是有效的。 锍盐可用于化学放大的正性抗蚀剂组合物，其具有精细的图案化并具有高分辨率。

公开(公告)号：US6030746A

公开(公告)日：2000-02-29

申请号：US831749

申请日：1997-04-01

申请人： Takeshi Nagata ,  Satoshi Watanabe ,  Tsunehiro Nishi ,  Jun Hatakeyama ,  Shigehiro Nagura ,  Toshinobu Ishihara

发明人： Takeshi Nagata ,  Satoshi Watanabe ,  Tsunehiro Nishi ,  Jun Hatakeyama ,  Shigehiro Nagura ,  Toshinobu Ishihara

IPC分类号： C07C43/205 ,  C07C43/30 ,  C07C43/303 ,  C07C43/315 ,  C07C43/32 ,  C07C69/28 ,  C07C69/30 ,  C07C69/712 ,  C07C69/96 ,  C07F7/06 ,  C07F7/08 ,  C07F7/18 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

CPC分类号： C07C43/303 ,  C07C69/96 ,  G03F7/0045 ,  C07C2101/14 ,  G03F7/039 ,  Y10S430/118

摘要： Di- or triphenyl monoterpene hydrocarbon derivatives of formula (1) are novel. ##STR1## X is a di- or trivalent monoterpene hydrocarbon group, R.sup.1 to R.sup.3 are hydrogen or an alkyl, alkoxy, alkoxyalkyl, alkenyl or aryl group, R.sup.4 is hydrogen or an acid labile group, at least one R.sup.4 being an acid labile group, letter n is an integer of 1-5, j, k and m are integers of 0-4, n+j+k+m=5, and p is 2 or 3. When used as a dissolution rate regulator, the compound of formula (1) exerts remarkably enhanced dissolution inhibitory effect and minimized light absorption in the deep-UV region. A chemically amplified positive resist composition having the compound of formula (1) blended therein is highly sensitive to actinic radiation such as deep-UV radiation, electron beam and X-ray, especially KrF excimer laser light, and has improved sensitivity, resolution and plasma etching resistance.

摘要翻译： 式（1）的二 - 或三苯基单萜烃衍生物是新颖的。 X是二价或三价单萜烃基，R 1至R 3是氢或烷基，烷氧基，烷氧基烷基，烯基或芳基，R 4是氢或酸不稳定基团，至少一个R 4是酸不稳定基团，字母n 是1-5的整数，j，k和m是0-4，n + j + k + m = 5的整数，p是2或3.当用作溶出速率调节剂时，式 1）在深紫外区域发挥显着增强的溶解抑制作用和最小化的光吸收。 具有其中混合的式（1）化合物的化学放大正性抗蚀剂组合物对光化辐射如深UV辐射，电子束和X射线，特别是KrF准分子激光具有高度敏感性，并且具有改善的灵敏度，分辨率和等离子体 耐腐蚀性。

公开(公告)号：US07498126B2

公开(公告)日：2009-03-03

申请号：US11806970

申请日：2007-06-05

申请人： Youichi Ohsawa ,  Kazunori Maeda ,  Satoshi Watanabe

发明人： Youichi Ohsawa ,  Kazunori Maeda ,  Satoshi Watanabe

IPC分类号： G03C1/73 ,  G03F7/031 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30

CPC分类号： G03F7/0045 ,  C07D333/36 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/123

摘要： A photoacid generator has formula (1). A chemically amplified resist composition comprising the photoacid generator has advantages including a high resolution, focus latitude, long-term PED dimensional stability, and a satisfactory pattern profile shape. When the photoacid generator is combined with a resin having acid labile groups other than those of the acetal type, resolution and top loss are improved. The composition is suited for deep UV lithography.

摘要翻译： 光致酸发生器具有式（1）。 包含光致酸发生器的化学放大抗蚀剂组合物具有包括高分辨率，聚焦纬度，长期PED尺寸稳定性和令人满意的图案轮廓形状的优点。 当光酸产生剂与具有不同于缩醛类型的酸不稳定基团的树脂组合时，分辨率和顶部损失得到改善。 该组合物适用于深紫外光刻。

公开(公告)号：US07335458B2

公开(公告)日：2008-02-26

申请号：US11354204

申请日：2006-02-15

申请人： Youichi Ohsawa ,  Kazunori Maeda ,  Satoshi Watanabe

发明人： Youichi Ohsawa ,  Kazunori Maeda ,  Satoshi Watanabe

IPC分类号： G03F7/004 ,  G03F7/30

CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

摘要： A chemically amplified positive resist composition is provided comprising (A) a resin containing acid labile groups other than acetal type which changes its solubility in an alkaline developer as a result of the acid labile groups being eliminated under the action of acid and (B) specific sulfonium salts as a photoacid generator.The composition is improved in resolution and focus latitude, minimized in line width variation and profile degradation even on prolonged PED, improved in pattern profile after development, minimized in pattern feature size variation within the wafer plane by uneven development and thus best suited in the deep-UV lithography.

摘要翻译： 提供一种化学放大正性抗蚀剂组合物，其包含（A）除了缩醛型以外的酸不稳定基团的树脂，其在酸性作用下由于酸不稳定基团被消除而改变其在碱性显影剂中的溶解度，（B）具体 锍盐作为光致酸发生剂。 组合物在分辨率和对焦纬度方面得到改善，即使在长时间的PED下也减少了线宽变化和轮廓退化，改善了显影后的图案轮廓，通过不平坦的发展使晶片平面内的图案特征尺寸变化最小化，因此最适合于深度 -UV光刻。

公开(公告)号：US20060188810A1

公开(公告)日：2006-08-24

申请号：US11354204

申请日：2006-02-15

申请人： Youichi Ohsawa ,  Kazunori Maeda ,  Satoshi Watanabe

发明人： Youichi Ohsawa ,  Kazunori Maeda ,  Satoshi Watanabe

IPC分类号： G03C1/76

CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

摘要： A chemically amplified positive resist composition is provided comprising (A) a resin containing acid labile groups other than acetal type which changes its solubility in an alkaline developer as a result of the acid labile groups being eliminated under the action of acid and (B) specific sulfonium salts as a photoacid generator. The composition is improved in resolution and focus latitude, minimized in line width variation and profile degradation even on prolonged PED, improved in pattern profile after development, minimized in pattern feature size variation within the wafer plane by uneven development and thus best suited in the deep-UV lithography.

摘要翻译： 提供一种化学放大正性抗蚀剂组合物，其包含（A）除了缩醛型以外的酸不稳定基团的树脂，其在酸性作用下由于酸不稳定基团被消除而改变其在碱性显影剂中的溶解度，（B）具体 锍盐作为光致酸发生剂。 组合物在分辨率和对焦纬度方面得到改善，即使在长时间的PED下也减少了线宽变化和轮廓退化，改善了显影后的图案轮廓，通过不平坦的发展使晶片平面内的图案特征尺寸变化最小化，因此最适合于深度 -UV光刻。

公开(公告)号：US20070292768A1

公开(公告)日：2007-12-20

申请号：US11806970

申请日：2007-06-05

申请人： Youichi Ohsawa ,  Kazunori Maeda ,  Satoshi Watanabe

发明人： Youichi Ohsawa ,  Kazunori Maeda ,  Satoshi Watanabe

IPC分类号： G03C1/00 ,  C07D333/36 ,  G03C5/56

CPC分类号： G03F7/0045 ,  C07D333/36 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/123

摘要： A photoacid generator has formula (1). A chemically amplified resist composition comprising the photoacid generator has advantages including a high resolution, focus latitude, long-term PED dimensional stability, and a satisfactory pattern profile shape. When the photoacid generator is combined with a resin having acid labile groups other than those of the acetal type, resolution and top loss are improved. The composition is suited for deep UV lithography.

摘要翻译： 光致酸发生器具有式（1）。 包含光致酸发生器的化学放大抗蚀剂组合物具有包括高分辨率，聚焦纬度，长期PED尺寸稳定性和令人满意的图案轮廓形状的优点。 当光酸产生剂与具有不同于缩醛类型的酸不稳定基团的树脂组合时，分辨率和顶部损失得到改善。 该组合物适用于深紫外光刻。

公开(公告)号：US07056640B2

公开(公告)日：2006-06-06

申请号：US10636541

申请日：2003-08-08

申请人： Youichi Ohsawa ,  Satoshi Watanabe ,  Kazunori Maeda

发明人： Youichi Ohsawa ,  Satoshi Watanabe ,  Kazunori Maeda

IPC分类号： G03F7/023 ,  G03F7/30

CPC分类号： G03F7/0045 ,  C07C317/28 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/106

摘要： Sulfonyldiazomethane compounds containing a long-chain alkyl- or alkoxy-naphthyl group are novel and useful as photoacid generators. Chemical amplification type resist compositions comprising the same are suited for microfabrication because of many advantages including improved resolution, improved focus latitude, and minimized line width variation or shape degradation even on long-term PED.

摘要翻译： 含有长链烷基 - 或烷氧基 - 萘基的磺酰基重氮甲烷化合物是新颖的，可用作光致酸发生剂。 包含该化合物的抗蚀剂组合物由于具有改善的分辨率，改善的聚焦纬度以及即使在长期PED下也能最小化线宽变化或形状退化的诸多优点，因此适用于微细加工。