摘要:
A semiconductor device includes a first connecting member having a first electrode, a second connecting member having a second electrode, and an anisotropic conductive film between the first connecting member and the second connecting member, the anisotropic conductive film electrically connecting the first and second electrodes to each other. The anisotropic conductive film includes a polymer binder resin, an epoxy resin, conductive particles, and a curing agent. The epoxy resin includes a naphthalene ring-containing epoxy resin and a dicyclopentadiene ring-containing epoxy resin. The naphthalene ring-containing epoxy resin is included in an amount of 100 parts by weight to 500 parts by weight based on 100 parts by weight of the dicyclopentadiene ring-containing epoxy resin.
摘要:
An electronic device includes a connection material formed from an adhesive composition that includes: a polymer resin; a cationic polymerization catalyst represented by Formula 1; and an organic base, where, in Formula 1, R1 may be selected from the group of hydrogen, C1-C6 alkyl, C6-C14 aryl, —C(═O)R4, —C(═O)OR5, and —C(═O)NHR6 (in which R4, R5, and R6 may each independently be selected from C1-C6 alkyl and C6-C14 aryl), R2 may be C1-C6 alkyl, and R3 may be selected from the group of a nitrobenzyl group, a dinitrobenzyl group, a trinitrobenzyl group, a benzyl group, a C1-C6 alkyl-substituted benzyl group, and a naphthylmethyl group.
摘要:
An electronic device includes an anisotropic conductive film as a connection material, the anisotropic conductive film being formed from an anisotropic conductive film-forming composition. The anisotropic conductive film-forming composition includes a polycyclic aromatic ring-containing epoxy resin, a fluorene epoxy resin, nano silica and conductive particles.
摘要:
A semiconductor device bonded by an anisotropic conductive film and an anisotropic conductive film composition, the anisotropic conductive film including a reactive monomer having an epoxy equivalent weight of about 120 to about 180 g/eq; a hydrogenated epoxy resin; and a sulfonium cation curing catalyst.
摘要:
A semiconductor device includes an anisotropic conductive film for connecting the semiconductor device. The anisotropic conductive film includes a first conductive layer that has first conductive particles. The first conductive particles include cores containing silica or a silica composite, and have a 20% K-value ranging from about 7,000 N/mm2 to about 12,000 N/mm2.
摘要翻译:半导体器件包括用于连接半导体器件的各向异性导电膜。 各向异性导电膜包括具有第一导电颗粒的第一导电层。 第一导电颗粒包括含有二氧化硅或二氧化硅复合材料的芯,并且具有约7,000N / mm 2至约12,000N / mm 2的20%K值。
摘要:
An anisotropic conductive film composition for bonding an electronic device may include a hydrogenated bisphenol A epoxy monomer represented by Formula 1 or a hydrogenated bisphenol A epoxy oligomer represented by Formula 2: where n may be an integer from 1 to about 50.
摘要:
An anisotropic conductive film, a method for preparing a semiconductor device, and a semiconductor device, the anisotropic conductive film including a base film, the base film having a storage modulus of 5,000 kgf/cm2 or less or a coefficient of thermal expansion of 50 ppm/° C. or less at 100° C. to 150° C.; and an adhesive layer on the base film, the adhesive layer containing conductive particles.
摘要翻译:各向异性导电膜,半导体器件的制备方法和半导体器件,各向异性导电膜包括基膜,基膜的储能模量为5000kgf / cm 2以下或热膨胀系数为50ppm 在100℃至150℃下的温度/℃或更低。 以及在基底膜上的粘合剂层,所述粘合层含有导电颗粒。
摘要:
Provided are a light emitting device and a light emitting device package. The light emitting device includes a transparent substrate, a light emitting structure, and a first reflection layer. The light emitting structure includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer that are disposed on a top surface of the substrate. The first reflection layer is disposed on a bottom surface of the substrate. The bottom surface of the substrate has a surface roughness of about 1 nm to about 15 nm in root mean square (RMS) value.