SEMICONDUCTOR DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20150372101A1

    公开(公告)日:2015-12-24

    申请号:US14662919

    申请日:2015-03-19

    摘要: A semiconductor device including a substrate, channels, a gate stack, and a pad separating region. The substrate has a pad region adjacent to a cell region. The channels extend in a direction crossing an upper surface of the substrate in the cell region. The gate stack includes a plurality of gate electrode layers spaced apart from each other on the substrate and enclosing the channels in the cell region. The pad separating region separates the gate stack into two or more regions in the pad region. The gate electrode layers have different lengths in the pad region.

    摘要翻译: 一种半导体器件,包括衬底,沟道,栅叠层和衬垫分离区。 衬底具有与单元区域相邻的衬垫区域。 通道在与单元区域中的基板的上表面交叉的方向上延伸。 栅极堆叠包括在衬底上彼此间隔开的多个栅极电极层,并且包围电池区域中的沟道。 焊盘分离区域将焊盘区分离成焊盘区域中的两个或更多个区域。 栅极电极层在焊盘区域中具有不同的长度。