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    Increasing hydrogen adsorption of nanostructured storage materials by modifying sp2 covalent bonds
    1.
    发明申请
    Increasing hydrogen adsorption of nanostructured storage materials by modifying sp2 covalent bonds 审中-公开
    通过改变sp2共价键来增加纳米结构储存材料的氢吸附

    公开(公告)号：US20070092437A1

    公开(公告)日：2007-04-26

    申请号：US10020344

    申请日：2001-12-11

    申请人： Young-Kyun Kwon ,  Seung-Hoon Jhi ,  Keith Bradley ,  Philip Collins ,  Jean-Christophe Gabriel ,  George Gruner

    发明人： Young-Kyun Kwon ,  Seung-Hoon Jhi ,  Keith Bradley ,  Philip Collins ,  Jean-Christophe Gabriel ,  George Gruner

    IPC分类号： C01B3/00

    CPC分类号： C01B3/0021 ,  B82Y30/00 ,  C01B3/001 ,  Y02E60/325

    摘要： According to the invention, nanostructured storage materials are provided for storing hydrogen. The nanostructured storage materials can include a network of light elements, such as Be, B, C, N, O, F, Mg, P, S, and Cl, coupled with sp2 bonds. The hydrogen adsorption to the nanostructured storage material is improved by modifying the sp2 bonds. The sp2 bonds can be modified by forming the nanostructured storage material from the above light elements, possibly with a shape other than a planar layer, and by introducing defects. A chemical vapor deposition technique can be used for the synthesis, where doping gases are included into the flow. Methods for forming the nanostructured storage material with defects include removing light elements from the nanostructured storage material by irradiation with electrons, neutrons, ions, gamma rays, X-rays, and microwaves.

    摘要翻译： 根据本发明，提供用于储存氢的纳米结构储存材料。 纳米结构的储存材料可以包括与Sp 2键结合的诸如Be，B，C，N，O，F，Mg，P，S和Cl的光元件网络。 对纳米结构储存材料的氢吸附通过改变sp 2 O 2键来改善。 可以通过从上述光元件形成纳米结构的储存材料，可能具有不同于平面层的形状，并且通过引入缺陷来修饰sp 2 O 2键。 化学气相沉积技术可以用于合成，其中掺杂气体被包括在流中。 用于形成具有缺陷的纳米结构存储材料的方法包括通过用电子，中子，离子，γ射线，X射线和微波照射从纳米结构的储存材料中去除光元件。

    Hydrogen storage and supply system
    2.
    发明申请
    Hydrogen storage and supply system 失效
    储氢系统

    公开(公告)号：US20050183424A1

    公开(公告)日：2005-08-25

    申请号：US11007383

    申请日：2004-12-07

    申请人： Keith Bradley ,  Jeff Wyatt ,  Seung-Hoon Jhi ,  Young-Kyun Kwon ,  Jean-Christophe Gabriel ,  George Gruner

    发明人： Keith Bradley ,  Jeff Wyatt ,  Seung-Hoon Jhi ,  Young-Kyun Kwon ,  Jean-Christophe Gabriel ,  George Gruner

    IPC分类号： B65B1/04 ,  B65B1/30 ,  B65B3/04 ,  B65B3/26 ,  B67C3/02 ,  B67D99/00 ,  F17C11/00 ,  F17C13/02 ,  G06F17/00 ,  B67D5/00

    CPC分类号： F17C11/005 ,  G06Q50/06 ,  Y02E60/321 ,  Y02P90/45

    摘要： This invention provides for an apparatus and a method for operation of a cryogenic hydrogen storage system that contains a porous medium configured to adsorb hydrogen. The hydrogen storage and supply system includes a hydrogen source apparatus and a cryosorptive storage apparatus. Methods and devices that allow for an energy efficient filling of the cryosorptive apparatus from the hydrogen source apparatus are described. The cryosorptive hydrogen storage apparatus is filled with cold, pressurized hydrogen. During the course of filling, heat is generated in the cryosorptive storage device by the process of hydrogen adsorption on to the host medium. Methods and devices are provided for the removal the generated heat and the warm hydrogen. Further provided are devices and methods for the capture and recycle of escaped hydrogen within the hydrogen source apparatus.

    摘要翻译： 本发明提供了一种用于操作低温氢存储系统的装置和方法，该低温储氢系统包含构造成吸附氢气的多孔介质。 氢存储和供给系统包括氢源装置和低温存储装置。 描述允许从氢源装置对冷冻摄影装置进行能量效率充填的方法和装置。 冷藏式氢存储装置充满冷的加压氢气。 在填充过程中，通过氢吸附到主介质上的过程，在冷冻存储装置中产生热量。 提供了用于去除所产生的热量和温氢的方法和装置。 还提供了用于在氢源装置内捕获和再循环逸出的氢的装置和方法。

    Sensitivity control for nanotube sensors
    4.
    发明申请
    Sensitivity control for nanotube sensors 审中-公开

    公开(公告)号：US20050169798A1

    公开(公告)日：2005-08-04

    申请号：US11090550

    申请日：2005-03-25

    申请人： Keith Bradley ,  Philip Collins ,  Jean-Christophe Gabriel ,  George Gruner ,  Alexander Star

    发明人： Keith Bradley ,  Philip Collins ,  Jean-Christophe Gabriel ,  George Gruner ,  Alexander Star

    IPC分类号： G01N27/12 ,  G01N27/414 ,  G01N31/22

    CPC分类号： B82Y15/00 ,  G01N27/129 ,  Y10S977/734

    摘要： Nanostructure sensing devices for detecting an analyte are described. The devices include nanostructures connected to conductive elements, all on a substrate. Contact regions adjacent to points of contact between the nanostructures and the conductive elements are given special treatment. The proportion of nanostructure surface area within contact regions can be maximized to effect sensing at very low analyte concentrations. The contact regions can be passivated in an effort to prevent interaction between the environment and the contact regions for sensing at higher analyte concentrations and for reducing cross-sensing. Both contact regions and at least some portion of the nanostructures can be covered with a material that is at least partially permeable to the analyte of interest and impermeable to some other species to tune selectivity and sensitivity of the nanostructure sensing device.

    Sensor device with heated nanostructure
    5.
    发明申请
    Sensor device with heated nanostructure 审中-公开
    具有加热纳米结构的传感器装置

    公开(公告)号：US20070114573A1

    公开(公告)日：2007-05-24

    申请号：US10655529

    申请日：2003-09-04

    申请人： Tzong-Ru Han ,  Alexander Star ,  Philip Collins ,  Jean-Christophe Gabriel ,  George Gruner ,  Keith Bradley

    发明人： Tzong-Ru Han ,  Alexander Star ,  Philip Collins ,  Jean-Christophe Gabriel ,  George Gruner ,  Keith Bradley

    IPC分类号： H01L29/768

    CPC分类号： G01N25/20

    摘要： A nanostructure sensing device includes a substrate, a nanotube disposed over the substrate, and at least two conductive elements electrically connected to the nanotube. A electric current on the order of about 10 μA, or greater, is passed through the conductive elements and the nanotube. As a result, the nanotube heats up relative to the substrate. In the alternative, some other method may be used to heat the nanotube. When operated as a sensor with a heated nanotube, the sensor's response and/or recovery time may be markedly improved.

    摘要翻译： 纳米结构感测装置包括衬底，设置在衬底上的纳米管以及电连接到纳米管的至少两个导电元件。 大约10μA或更大的电流通过导电元件和纳米管。 结果，纳米管相对于基底加热。 在替代方案中，可以使用一些其它方法来加热纳米管。 当作为具有加热的纳米管的传感器操作时，可以显着改善传感器的响应和/或恢复时间。

    Flexible nanostructure electronic devices
    8.
    发明申请
    Flexible nanostructure electronic devices 有权
    柔性纳米结构电子器件

    公开(公告)号：US20050184641A1

    公开(公告)日：2005-08-25

    申请号：US10846072

    申请日：2004-05-14

    申请人： N. Armitage ,  Keith Bradley ,  Jean-Christophe Gabriel ,  George Gruner

    发明人： N. Armitage ,  Keith Bradley ,  Jean-Christophe Gabriel ,  George Gruner

    IPC分类号： H01B1/24 ,  H01J1/62 ,  H01J63/04 ,  H01L51/00

    CPC分类号： H01B1/24 ,  B82Y10/00 ,  B82Y15/00 ,  H01L51/0048 ,  H01L51/0097 ,  H01L51/0595

    摘要： A flexible electronic device is made up of nanostructures. Specifically, the device includes a flexible substrate, a film of nanostructures in contact with the flexible substrate, a first conducting element in contact with the film of nanostructures, and a second conducting element in contact with the film of nanostructures. The nanostructures may comprise nanotubes, such as carbon nanotubes disposed along the flexible substrate, such as an organic or polymer substrate. The first and second conductive elements may serve as electrical terminals, or as a source and drain. In addition, the electronic device may include a gate electrode that is in proximity to the nanotubes and not in electrical contact with the nanotubes. In this configuration, the device can operate as a transistor or a FET. The device may also be operated in a resistive mode as a chemical sensor (e.g., for sensing NH3).

    摘要翻译： 灵活的电子设备由纳米结构组成。 具体地，该装置包括柔性基板，与柔性基板接触的纳米结构薄膜，与纳米结构薄膜接触的第一导电元件和与纳米结构薄膜接触的第二导电元件。 纳米结构可以包括纳米管，例如沿着柔性基底设置的碳纳米管，例如有机或聚合物基底。 第一和第二导电元件可以用作电端子，或用作源极和漏极。 此外，电子器件可以包括位于纳米管附近并且不与纳米管电接触的栅电极。 在这种配置中，器件可以作为晶体管或FET工作。 该装置还可以作为化学传感器（例如，用于感测NH 3）在电阻模式下操作。

    Dispersed growth of nanotubes on a substrate
    9.
    发明申请
    Dispersed growth of nanotubes on a substrate 审中-公开
    纳米管在基体上的分散生长

    公开(公告)号：US20070140946A1

    公开(公告)日：2007-06-21

    申请号：US11703293

    申请日：2007-02-07

    申请人： Jean-Christophe Gabriel ,  Keith Bradley ,  Philip Collins

    发明人： Jean-Christophe Gabriel ,  Keith Bradley ,  Philip Collins

    IPC分类号： D01F9/12

    CPC分类号： D01F9/12 ,  B82Y10/00 ,  B82Y30/00 ,  D01F9/127 ,  H01L29/1025 ,  H01L29/12 ,  H01L29/66409 ,  H01L29/772

    摘要： Methods of forming a dispersion of nanostructures, a distribution of carbon nanotubes, and an array of nanostructure devices are described. The methods involve providing a substrate, applying growth promoter to at least a portion of the substrate, exposing the substrate and the growth promoter to a plasma, and forming a dispersion of nanostructures from the growth promoter after the plasma exposure. Exposing the substrate and the growth promoter to a plasma disperses at least a portion of the growth promoter as distinct, isolated growth promoter areas over the substrate. Preferably, the growth promoter areas are nanoparticles between about 1 nm and 50 nm in size and they are dispersed approximately uniformly over the substrate. An array of nanostructure devices is also described. The array of devices includes a substrate, a dispersion of nanostructures disposed discontinuously on the substrate and an array of electrodes in contact with the dispersion of nanostructures. The nanostructures may be nanotubes or nanowires. Preferably, the dispersion of nanostructures is approximately planar and substantially in contact with the substrate. Regions containing nanostructures can provide electrical communication between two or more electrodes.

    摘要翻译： 描述形成纳米结构分散体，碳纳米管分布和纳米结构器件阵列的方法。 所述方法包括提供底物，将生长促进剂施用于至少一部分底物，将底物和生长促进剂暴露于血浆，以及在等离子体暴露后从生长促进剂形成纳米结构的分散体。 将底物和生长促进剂暴露于等离子体将至少一部分生长促进剂分散在衬底上作为不同的分离的生长促进剂区域。 优选地，生长促进剂区域是尺寸在约1nm和50nm之间的纳米颗粒，并且它们大致均匀地分散在基底上。 还描述了纳米结构器件的阵列。 器件阵列包括衬底，不连续地设置在衬底上的纳米结构的分散体和与纳米结构分散体接触的电极阵列。 纳米结构可以是纳米管或纳米线。 优选地，纳米结构的分散体近似平面并且基本上与基底接触。 包含纳米结构的区域可以提供两个或更多个电极之间的电连通。