公开(公告)号：US20130017377A1

公开(公告)日：2013-01-17

申请号：US13637269

申请日：2011-03-25

申请人： Shohei Kataoka ,  Kaoru Iwato ,  Sou Kamimura ,  Toru Tsuchihashi ,  Yuichiro Enomoto ,  Kana Fujii ,  Kazuyoshi Mizutani ,  Shinji Tarutani ,  Keita Kato

发明人： Shohei Kataoka ,  Kaoru Iwato ,  Sou Kamimura ,  Toru Tsuchihashi ,  Yuichiro Enomoto ,  Kana Fujii ,  Kazuyoshi Mizutani ,  Shinji Tarutani ,  Keita Kato

IPC分类号： G03F7/004 ,  B32B3/10 ,  G03F7/20

CPC分类号： G03F7/30 ,  C08F220/28 ,  C08F232/08 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/2041 ,  G03F7/325 ,  Y10T428/24802

摘要： Provided is an actinic-ray- or radiation-sensitive resin composition and a method of forming a pattern using the same, ensuring excellent the etching resistivity and the stability during a post-exposure delay (PED) period. The composition contains a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, and a compound that generates an acid of pKa≧1.5 when exposed to actinic rays or radiation.

摘要翻译： 提供了一种光化射线或辐射敏感性树脂组合物和使用其形成图案的方法，确保了在曝光后延迟（PED）期间的蚀刻电阻率和稳定性优异。 该组合物含有含有重复单元的树脂，该重复单元含有当被酸作用时分解的基团，从而产生醇羟基，以及当暴露于光化射线或辐射时产生pKa≥1.5的酸的化合物。

公开(公告)号：US20120321855A1

公开(公告)日：2012-12-20

申请号：US13580921

申请日：2011-02-24

申请人： Kaoru Iwato ,  Shohei Kataoka ,  Shinji Tarutani ,  Sou Kamimura ,  Keita Kato ,  Yuichiro Enomoto ,  Kazuyoshi Mizutani ,  Toru Tsuchihashi ,  Kana Fujii

发明人： Kaoru Iwato ,  Shohei Kataoka ,  Shinji Tarutani ,  Sou Kamimura ,  Keita Kato ,  Yuichiro Enomoto ,  Kazuyoshi Mizutani ,  Toru Tsuchihashi ,  Kana Fujii

IPC分类号： G03F7/027 ,  B32B3/30 ,  G03F7/004 ,  G03F7/20 ,  C08F224/00

CPC分类号： G03F7/30 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/0757 ,  G03F7/0758 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/38 ,  Y10T428/24479

摘要： Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.

摘要翻译： 提供了形成图案的方法，确保优异的灵敏度，限制分辨率，粗糙度特性，曝光宽容度（EL），对曝光后烘烤（PEB）温度和聚焦宽度（焦深DOF）的依赖性以及抗蚀剂组合物 用于该方法。 该方法包括（A）由抗蚀剂组合物形成膜，所述抗蚀剂组合物含有含有重复单元的树脂，所述树脂含有当被酸作用时分解的基团，从而产生醇羟基，所述树脂当被酸作用时降低 其在含有有机溶剂的显影剂中的溶解度，（B）将膜曝光，和（C）使用含有有机溶剂的显影剂显影曝光膜。

公开(公告)号：US09709892B2

公开(公告)日：2017-07-18

申请号：US13637269

申请日：2011-03-25

申请人： Shohei Kataoka ,  Kaoru Iwato ,  Sou Kamimura ,  Toru Tsuchihashi ,  Yuichiro Enomoto ,  Kana Fujii ,  Kazuyoshi Mizutani ,  Shinji Tarutani ,  Keita Kato

发明人： Shohei Kataoka ,  Kaoru Iwato ,  Sou Kamimura ,  Toru Tsuchihashi ,  Yuichiro Enomoto ,  Kana Fujii ,  Kazuyoshi Mizutani ,  Shinji Tarutani ,  Keita Kato

IPC分类号： G03F7/30 ,  G03F7/039 ,  G03F7/075 ,  C08F220/28 ,  G03F7/004 ,  G03F7/20 ,  G03F7/32 ,  G03F7/038 ,  C08F232/08

CPC分类号： G03F7/30 ,  C08F220/28 ,  C08F232/08 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/2041 ,  G03F7/325 ,  Y10T428/24802

摘要： Provided is an actinic-ray- or radiation-sensitive resin composition and a method of forming a pattern using the same, ensuring excellent the etching resistivity and the stability during a post-exposure delay (PED) period. The composition contains a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, and a compound that generates an acid of pKa≧−1.5 when exposed to actinic rays or radiation.

公开(公告)号：US09551935B2

公开(公告)日：2017-01-24

申请号：US13636965

申请日：2011-03-25

申请人： Keita Kato ,  Shinji Tarutani ,  Toru Tsuchihashi ,  Sou Kamimura ,  Yuichiro Enomoto ,  Kana Fujii ,  Kaoru Iwato ,  Shohei Kataoka ,  Kazuyoshi Mizutani

发明人： Keita Kato ,  Shinji Tarutani ,  Toru Tsuchihashi ,  Sou Kamimura ,  Yuichiro Enomoto ,  Kana Fujii ,  Kaoru Iwato ,  Shohei Kataoka ,  Kazuyoshi Mizutani

IPC分类号： G03F7/32 ,  G03F7/039 ,  G03F7/20 ,  G03F7/004 ,  G03F7/075

CPC分类号： G03F7/325 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0757 ,  G03F7/2041 ,  Y10T428/24

摘要： Provided is a method of forming a pattern, ensuring excellent exposure latitude (EL) and focus latitude (depth of focus DOF). The method of forming a pattern includes (A) forming a film from a resist composition, the resist composition, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent, thereby forming a negative pattern. The resist composition contains (a) a resin that is configured to decompose when acted on by an acid and ΔSP thereof represented by formula (1) below is 2.5 (MPa)1/2 or above, (b) a compound that is composed to generate an acid when exposed to actinic rays or radiation, and (c) a solvent. ΔSP=SPF−SPI  (1)

摘要翻译： 提供了一种形成图案的方法，确保优异的曝光宽容度（EL）和聚焦纬度（焦深DOF）。 形成图案的方法包括（A）从抗蚀剂组合物形成膜，抗蚀剂组合物，（B）将膜曝光，和（C）使用含有有机溶剂的显影剂显影曝光膜，从而形成 负面模式。 抗蚀剂组合物含有（a）在被酸作用时被分解的树脂，由下式（1）表示的＆Dgr; SP为2.5（MPa）1/2以上，（b） 被组合以在暴露于光化射线或辐射时产生酸，和（c）溶剂。 ＆Dgr; SP = SPF-SPI（1）

公开(公告)号：US09097973B2

公开(公告)日：2015-08-04

申请号：US13172273

申请日：2011-06-29

申请人： Yuichiro Enomoto ,  Shinji Tarutani ,  Sou Kamimura ,  Kaoru Iwato ,  Keita Kato ,  Kana Fujii

发明人： Yuichiro Enomoto ,  Shinji Tarutani ,  Sou Kamimura ,  Kaoru Iwato ,  Keita Kato ,  Kana Fujii

IPC分类号： G03F7/42 ,  G03F7/039 ,  G03F7/038 ,  G03F7/32 ,  G03F7/004 ,  G03F7/20

CPC分类号： G03F7/325 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/422

摘要： Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing an organic solvent, wherein the developer contains an alcohol compound (X) at a content of 0 to less than 500 ppm based on the total mass of the developer.

摘要翻译： 提供一种形成图案的方法，包括（a）将化学放大的抗蚀剂组合物形成为膜，（b）将膜曝光，和（c）用含有机溶剂的显影剂显影曝光的膜，其中 显影剂含有基于显影剂总质量为0至小于500ppm的醇化合物（X）。

公开(公告)号：US20130011785A1

公开(公告)日：2013-01-10

申请号：US13636965

申请日：2011-03-25

申请人： Keita Kato ,  Shinji Tarutani ,  Toru Tsuchihashi ,  Sou Kamimura ,  Yuichiro Enomoto ,  Kana Fujii ,  Kaoru Iwato ,  Shohei Kataoka ,  Kazuyoshi Mizutani

发明人： Keita Kato ,  Shinji Tarutani ,  Toru Tsuchihashi ,  Sou Kamimura ,  Yuichiro Enomoto ,  Kana Fujii ,  Kaoru Iwato ,  Shohei Kataoka ,  Kazuyoshi Mizutani

IPC分类号： G03F7/004 ,  H01L29/02 ,  B32B3/10 ,  G03F7/20 ,  G03F7/075

CPC分类号： G03F7/325 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0757 ,  G03F7/2041 ,  Y10T428/24

摘要： Provided is a method of forming a pattern, ensuring excellent exposure latitude (EL) and focus latitude (depth of focus DOF). The method of forming a pattern includes (A) forming a film from a resist composition, the resist composition, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent, thereby forming a negative pattern. The resist composition contains (a) a resin that is configured to decompose when acted on by an acid and ΔSP thereof represented by formula (1) below is 2.5 (MPa)1/2 or above, (b) a compound that is composed to generate an acid when exposed to actinic rays or radiation, and (c) a solvent. ΔSP=SPF−SPI  (1)

摘要翻译： 提供了一种形成图案的方法，确保优异的曝光宽容度（EL）和聚焦纬度（焦深DOF）。 形成图案的方法包括（A）从抗蚀剂组合物形成膜，抗蚀剂组合物，（B）将膜曝光，和（C）使用含有有机溶剂的显影剂显影曝光膜，从而形成 负面模式。 抗蚀剂组合物含有（a）在被酸作用时被分解的树脂，由下式（1）表示的＆Dgr; SP为2.5（MPa）1/2以上，（b） 被组合以在暴露于光化射线或辐射时产生酸，和（c）溶剂。 ＆Dgr; SP = SPF-SPI（1）

公开(公告)号：US10126653B2

公开(公告)日：2018-11-13

申请号：US13580921

申请日：2011-02-24

申请人： Kaoru Iwato ,  Shohei Kataoka ,  Shinji Tarutani ,  Sou Kamimura ,  Keita Kato ,  Yuichiro Enomoto ,  Kazuyoshi Mizutani ,  Toru Tsuchihashi ,  Kana Fujii

发明人： Kaoru Iwato ,  Shohei Kataoka ,  Shinji Tarutani ,  Sou Kamimura ,  Keita Kato ,  Yuichiro Enomoto ,  Kazuyoshi Mizutani ,  Toru Tsuchihashi ,  Kana Fujii

IPC分类号： G03F7/30 ,  G03F7/004 ,  G03F7/38 ,  G03F7/075 ,  G03F7/038 ,  G03F7/039 ,  G03F7/11 ,  G03F7/20 ,  G03F7/32

摘要： Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.

公开(公告)号：US08871642B2

公开(公告)日：2014-10-28

申请号：US13808496

申请日：2011-08-26

申请人： Yuichiro Enomoto ,  Shinji Tarutani ,  Sou Kamimura ,  Keita Kato ,  Kana Fujii

发明人： Yuichiro Enomoto ,  Shinji Tarutani ,  Sou Kamimura ,  Keita Kato ,  Kana Fujii

IPC分类号： H01L21/312 ,  H01L21/3105 ,  G03F7/039 ,  G03F7/32 ,  G03F7/40 ,  G03F7/20 ,  H01L29/02 ,  G03F7/038

CPC分类号： G03F7/40 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/405 ,  H01L29/02

摘要： Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, (c) developing the exposed film with a developer containing an organic solvent, and (d) rinsing the developed film with a rinse liquid containing an organic solvent, which rinse liquid has a specific gravity larger than that of the developer.

摘要翻译： 提供一种形成图案的方法，包括（a）将化学放大的抗蚀剂组合物形成为膜，（b）使膜暴露于光，（c）用含有机溶剂的显影剂显影曝光的膜，和（d ）用含有有机溶剂的漂洗液冲洗显影的膜，冲洗液的比重大于显影剂的比重。

公开(公告)号：US20130113082A1

公开(公告)日：2013-05-09

申请号：US13808496

申请日：2011-08-26

申请人： Yuichiro Enomoto ,  Shinji Tarutani ,  Sou Kamimura ,  Keita Kato ,  Kana Fujii

发明人： Yuichiro Enomoto ,  Shinji Tarutani ,  Sou Kamimura ,  Keita Kato ,  Kana Fujii

IPC分类号： G03F7/40 ,  G03F7/20 ,  H01L29/02

CPC分类号： G03F7/40 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/405 ,  H01L29/02

摘要： Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, (c) developing the exposed film with a developer containing an organic solvent, and (d) rinsing the developed film with a rinse liquid containing an organic solvent, which rinse liquid has a specific gravity larger than that of the developer.

摘要翻译： 提供一种形成图案的方法，包括（a）将化学放大的抗蚀剂组合物形成为膜，（b）使膜暴露于光，（c）用含有机溶剂的显影剂显影曝光的膜，和（d ）用含有有机溶剂的漂洗液冲洗显影的膜，冲洗液的比重大于显影剂的比重。

公开(公告)号：US08647812B2

公开(公告)日：2014-02-11

申请号：US13636834

申请日：2011-03-18

申请人： Kana Fujii ,  Shinji Tarutani

发明人： Kana Fujii ,  Shinji Tarutani

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/028 ,  G03F7/40

CPC分类号： G03F7/325 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041 ,  Y10T428/24479

摘要： A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the resist composition contains (A) a resin capable of increasing the polarity to decrease the solubility for an organic solvent-containing developer by the action of an acid, (B) at least one kind of a compound capable of generating a sulfonic acid represented by the specific formula upon irradiation with an actinic ray or radiation, and (C) a solvent.

摘要翻译： 一种图案形成方法，包括（i）从化学放大抗蚀剂组合物形成膜的步骤，（ii）曝光所述膜的步骤，以及（iii）通过使用含有机溶剂的显影剂使曝光的膜显影的步骤 ，其中抗蚀剂组合物含有（A）能够通过酸作用增加极性以降低对含有机溶剂的显影剂的溶解度的树脂，（B）至少一种能够产生磺酸的化合物 由光化射线或辐射照射时的具体式表示，和（C）溶剂。