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    Light-emitting device using a group III nitride compound semiconductor and a method of manufacture
    4.
    发明授权
    Light-emitting device using a group III nitride compound semiconductor and a method of manufacture 失效
    使用III族氮化物化合物半导体的发光装置及其制造方法

    公开(公告)号：US06960485B2

    公开(公告)日：2005-11-01

    申请号：US10375135

    申请日：2003-02-28

    申请人： Toshiya Uemura ,  Naohisa Nagasaka ,  Masaki Hashimura ,  Atsuo Hirano ,  Hiroshi Tadano ,  Tetsu Kachi ,  Hideki Hosokawa

    发明人： Toshiya Uemura ,  Naohisa Nagasaka ,  Masaki Hashimura ,  Atsuo Hirano ,  Hiroshi Tadano ,  Tetsu Kachi ,  Hideki Hosokawa

    IPC分类号： H01L33/00 ,  H01L33/10 ,  H01L33/32 ,  H01L33/46 ,  H01L33/60 ,  H01L21/00

    CPC分类号： H01L33/46 ,  H01L33/0095 ,  H01L33/32

    摘要： A process of forming separation grooves for separating a semiconductor wafer into individual light-emitting devices, a process for thinning the substrate, process for adhering the wafer to the adhesive sheet to expose a substrate surface on the reverse or backside of the wafer, a scribing process for forming split lines in the substrate for dividing the wafer into light-emitting devices, and a process of forming a mirror structure comprising a light transmission layer, a reflective layer, and a corrosion-resistant layer, which are laminated in sequence using sputtering or deposition processes. Because the light transmission layer is laminated on the adhesive sheet, gases normally volatilized from the adhesion materials are sealed and do not chemically combine with the metal being deposited as the reflective layer. As a result, reflectivity of the reflective layer can be maintained.

    摘要翻译： 形成用于将半导体晶片分离成各个发光器件的分离槽的工艺，用于使基板变薄的工艺，将晶片粘附到粘合片上以暴露晶片背面或背面的基板表面的处理，划线 在基板上形成分割线以将晶片分割成发光器件的工艺，以及形成包括透光层，反射层和耐腐蚀层的反射镜结构的工艺，其顺序地使用溅射 或沉积工艺。 由于透光层层压在粘合片上，所以通常从粘合材料挥发的气体被密封，并且不与作为反射层沉积的金属化学结合。 结果，可以保持反射层的反射率。

    Group III nitride compound semiconductor light-emitting device and method for producing the same
    7.
    发明授权
    Group III nitride compound semiconductor light-emitting device and method for producing the same 有权
    III族氮化物化合物半导体发光器件及其制造方法

    公开(公告)号：US06861281B2

    公开(公告)日：2005-03-01

    申请号：US10296290

    申请日：2000-12-25

    申请人： Toshiya Uemura ,  Naohisa Nagasaka

    发明人： Toshiya Uemura ,  Naohisa Nagasaka

    IPC分类号： H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/42 ,  H01S5/323 ,  H01S5/343 ,  H01L21/00

    CPC分类号： H01L33/46 ,  H01L33/32

    摘要： A reflective layer 10 is formed on a back surface 11b of a sapphire substrate 11. The reflective layer 10 includes an extension portion 10a which extends so as to cover almost all the sidewalls 21a of a light-emitting device in the vicinity of the sapphire substrate. Thus, since adhesion between the reflective layer 10 and the substrate is greatly enhanced in the vicinity of the periphery of the surface on which the reflective layer is formed (the substrate back surface 11b) by virtue of formation of the aforementioned extension portion 10a, exfoliation of the reflective layer 10 from the substrate is prevented. Therefore, even when a process in which the reflective layer 10 is attached onto an adhesive sheet to thereby secure the light-emitting device 100 on the sheet is employed, generation of a defective product having an exfoliated reflective layer can be prevented. Thus, the quality and productivity of the semiconductor light-emitting device 100 including the reflective layer 10 provided for enhancing emission efficiency can be considerably improved. The sidewalls 21a may have a short-circuit-prevention groove-like portion for preventing excessive extension of the reflective layer 10.

    摘要翻译： 反射层10形成在蓝宝石衬底11的背表面11b上。反射层10包括延伸部分10a，其延伸以覆盖蓝宝石衬底附近的发光器件的几乎所有侧壁21a 。 因此，由于通过形成上述延伸部10a，在形成有反射层的表面的周边附近（基板背面11b）上，由于反射层10和基板之间的粘附性大大增强，因此剥离 的反射层10被防止。 因此，即使采用将反射层10安装在粘合片上从而将发光装置100固定在片材上的处理，也可以防止具有剥离反射层的缺陷产物的产生。 因此，可以显着提高包括提供用于提高发光效率的反射层10的半导体发光器件100的质量和生产率。 侧壁21a可以具有用于防止反射层10的过度延伸的防短路凹槽部分。

    Semiconductor element and method for producing the same
    8.
    发明授权
    Semiconductor element and method for producing the same 失效
    半导体元件及其制造方法

    公开(公告)号：US07183136B2

    公开(公告)日：2007-02-27

    申请号：US10601310

    申请日：2003-06-23

    申请人： Masaki Hashimura ,  Shigeki Konishi ,  Naohisa Nagasaka

    发明人： Masaki Hashimura ,  Shigeki Konishi ,  Naohisa Nagasaka

    IPC分类号： H01L21/44

    CPC分类号： B23K26/009 ,  B23K26/18 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/78 ,  H01L33/0095 ,  H01L33/32 ,  H01S5/0201 ,  H01S5/32341

    摘要： A plurality of Group III nitride compound semiconductor layers are formed on a substrate for performing the formation of elements and the formation of electrodes. The Group III nitride compound semiconductor layers on parting lines are removed by etching or dicing due to a dicer so that only an electrode-forming layer on a side near the substrate remains or no Group III nitride compound semiconductor layer remains on the parting lines. A protective film is formed on the whole front surface. Separation grooves are formed in the front surface of the substrate by laser beam irradiation. The protective film is removed together with reaction products produced by the laser beam irradiation. The rear surface of the substrate 1s is polished to reduce the thickness of the substrate. Then, rear grooves corresponding to the latticed frame-shaped parting lines are formed in the rear surface of the substrate. The substrate is divided into individual elements along the parting lines.

    摘要翻译： 在用于进行元件形成和电极形成的基板上形成多个III族氮化物化合物半导体层。 分离线上的III族氮化物化合物半导体层通过由于切割机的蚀刻或切割而被去除，使得仅在衬底附近的电极形成层保留或不存在第III族氮化物化合物半导体层在分型线上。 在整个前表面上形成保护膜。 通过激光束照射在基板的前表面形成分离槽。 保护膜与通过激光束照射产生的反应产物一起除去。 抛光衬底1的后表面以减小衬底的厚度。 然后，在基板的后表面形成与格子状的分割线对应的后槽。 衬底沿着分型线分成单独的元件。

    Semiconductor element and method for producing the same
    9.
    发明申请
    Semiconductor element and method for producing the same 失效
    半导体元件及其制造方法

    公开(公告)号：US20050186760A1

    公开(公告)日：2005-08-25

    申请号：US10601310

    申请日：2003-06-23

    申请人： Masaki Hashimura ,  Shigeki Konishi ,  Naohisa Nagasaka

    发明人： Masaki Hashimura ,  Shigeki Konishi ,  Naohisa Nagasaka

    IPC分类号： B23K26/40 ,  H01L21/301 ,  H01L21/78 ,  H01L33/00 ,  H01L33/32 ,  H01S5/02 ,  H01S5/323

    CPC分类号： B23K26/009 ,  B23K26/18 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/78 ,  H01L33/0095 ,  H01L33/32 ,  H01S5/0201 ,  H01S5/32341

    摘要： A plurality of Group III nitride compound semiconductor layers are formed on a substrate for performing the formation of elements and the formation of electrodes. The Group III nitride compound semiconductor layers on parting lines are removed by etching or dicing due to a dicer so that only an electrode-forming layer on a side near the substrate remains or no Group III nitride compound semiconductor layer remains on the parting lines. A protective film is formed on the whole front surface. Separation grooves are formed in the front surface of the substrate by laser beam irradiation. The protective film is removed together with reaction products produced by the laser beam irradiation. The rear surface of the substrate 1s is polished to reduce the thickness of the substrate. Then, rear grooves corresponding to the latticed frame-shaped parting lines are formed in the rear surface of the substrate. The substrate is divided into individual elements along the parting lines.

    摘要翻译： 在用于进行元件形成和电极形成的基板上形成多个III族氮化物化合物半导体层。 分离线上的III族氮化物化合物半导体层通过由于切割机的蚀刻或切割而被去除，使得仅在衬底附近的电极形成层保留或不存在第III族氮化物化合物半导体层在分型线上。 在整个前表面上形成保护膜。 通过激光束照射在基板的前表面形成分离槽。 保护膜与通过激光束照射产生的反应产物一起除去。 抛光衬底1的后表面以减小衬底的厚度。 然后，在基板的后表面形成与格子状的分割线对应的后槽。 衬底沿着分型线分成单独的元件。