公开(公告)号：US06184960B2

公开(公告)日：2001-02-06

申请号：US09223269

申请日：1998-12-30

申请人： Yutaka Sawayama ,  Koji Taniguchi ,  Shinya Yamakawa ,  Atsushi Ban ,  Yoshihiro Okada ,  Atsuhito Murai ,  Takayuki Shimada

发明人： Yutaka Sawayama ,  Koji Taniguchi ,  Shinya Yamakawa ,  Atsushi Ban ,  Yoshihiro Okada ,  Atsuhito Murai ,  Takayuki Shimada

IPC分类号： G02F11343

CPC分类号： G02F1/133553 ,  G02F1/1345 ,  H01L27/1214 ,  H01L29/66765

摘要： A method for producing a substrate of a reflection type liquid crystal display device is provided. The method includes the steps of: forming the input portion for inputting a signal from outside and the connecting electrode on the substrate on which the reflective electrode is formed; forming a protective film on the connecting electrode; forming an interlayer insulator under the condition that the protective film on the connecting electrode is exposed; patterning the interlayer insulator; forming a reflective electrode film on the interlayer insulator; patterning the reflective electrode film to form the reflective electrode; and removing the protective film on the connecting electrode to expose the connecting electrode.

摘要翻译： 提供一种反射型液晶显示装置的基板的制造方法。 该方法包括以下步骤：形成用于从外部输入信号的输入部分和形成有反射电极的基板上的连接电极; 在连接电极上形成保护膜; 在连接电极上的保护膜露出的状态下形成层间绝缘体; 图案化层间绝缘体; 在层间绝缘体上形成反射电极膜; 图案化反射电极膜以形成反射电极; 并且去除连接电极上的保护膜以暴露连接电极。

公开(公告)号：US06788366B2

公开(公告)日：2004-09-07

申请号：US10327951

申请日：2002-12-26

申请人： Yutaka Sawayama ,  Kiyoshi Minoura ,  Ichiro Ihara ,  Koji Taniguchi ,  Sayuri Fujiwara

发明人： Yutaka Sawayama ,  Kiyoshi Minoura ,  Ichiro Ihara ,  Koji Taniguchi ,  Sayuri Fujiwara

IPC分类号： G02F11335

CPC分类号： G02F1/133553 ,  G02B5/124 ,  G02F1/134309

摘要： A display device includes a light modulating medium layer, a corner cube array and a reflective electrode layer. The corner cube array is provided on one side of the light modulating medium layer and includes multiple corner cubes as its unit elements. The reflective electrode layer is provided on the corner cube array and includes multiple reflective electrodes that are spaced apart from each other and that are used to apply a voltage to the light modulating medium layer. When the display device is viewed from over the corner cube array, an arrangement pattern of the corner cubes matches an arrangement pattern of the reflective electrodes in at least one direction.

摘要翻译： 显示装置包括光调制介质层，角立方体阵列和反射电极层。 角隅棱镜阵列设置在光调制介质层的一侧，并且包括多个角立方体作为其单元元件。 反射电极层设置在角立方体阵列上，并且包括彼此间隔开并且用于向光调制介质层施加电压的多个反射电极。 当从角立方体阵列观看显示装置时，角立方体的布置图案与至少一个方向上的反射电极的排列图案一致。

公开(公告)号：US08648415B2

公开(公告)日：2014-02-11

申请号：US12967089

申请日：2010-12-14

申请人： Koji Taniguchi

发明人： Koji Taniguchi

IPC分类号： H01L29/66

CPC分类号： H01L29/41741 ,  H01L21/743 ,  H01L21/76895 ,  H01L23/485 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10891 ,  H01L27/10894 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate, an impurity region in the semiconductor substrate, and a conductive layer contacting a top surface of the impurity region and at least a side surface of the impurity region.

摘要翻译： 半导体器件包括半导体衬底，半导体衬底中的杂质区域和与杂质区域的顶表面和至少杂质区域的侧表面接触的导电层。

公开(公告)号：US07460601B2

公开(公告)日：2008-12-02

申请号：US10282599

申请日：2002-10-29

申请人： Koji Taniguchi

发明人： Koji Taniguchi

IPC分类号： H04N7/18

CPC分类号： H04N21/4334 ,  G08B13/19656 ,  G08B13/19671 ,  H04N7/18 ,  H04N21/2187 ,  H04N21/4828 ,  H04N21/84 ,  H04N21/8456 ,  H04N21/8543

摘要： In a video data transmitting method of sending in real-time video data being externally inputted, when encoding video data being inputted as stream data, start and stop of an encoding process is repeated at a predetermined time interval to carry out a data dividing process whereby a plurality of time-continuous video data are generated as partial video data. Also, metadata of partial video data is generated, which is sent, together with the partial video data, in real-time as partial video metadata.

摘要翻译： 在外部输入的实时视频数据发送的视频数据发送方法中，在对作为流数据输入的视频数据进行编码时，以规定的时间间隔重复编码处理的开始和停止，进行数据分割处理， 生成多个时间连续的视频数据作为部分视频数据。 此外，生成部分视频数据的元数据，其与部分视频数据一起作为部分视频元数据实时发送。

公开(公告)号：US07020081B1

公开(公告)日：2006-03-28

申请号：US09209900

申请日：1998-12-11

申请人： Hideaki Tani ,  Koji Taniguchi

发明人： Hideaki Tani ,  Koji Taniguchi

IPC分类号： G01R31/08

CPC分类号： H04L65/4084 ,  H04L12/2801 ,  H04L29/06027 ,  H04L65/602 ,  H04L65/605 ,  H04N7/17309 ,  H04N21/234327 ,  H04N21/23608 ,  H04N21/2402 ,  H04N21/2662 ,  H04N21/4622 ,  H04N21/47202

摘要： A stream distribution system comprises a stream distribution server, a plurality of terminal devices each having a information reproduction function, and a local area network for connecting both of the stream distribution server and the terminal devices, in which the stream distribution server comprises reception means for receiving a stream data of a digital form transmitted through a broadcasting network or a communication network, selection means for selecting a predetermined unit of information from the stream data received by the reception means based on a distribution condition set by the terminal device which has an information reproduction function, file I/O means for controlling a file device under management of the stream distribution server and for outputting information selected by the selection means to the file device, and transmission means for transmitting information selected by the selection means to the terminal device after executing a predetermined processing according to a limitation of a preset data transmission band.

摘要翻译： 流分配系统包括流分发服务器，每个具有信息再现功能的多个终端设备，以及用于连接流分发服务器和终端设备两者的局域网，其中流分发服务器包括接收装置， 接收通过广播网络或通信网络发送的数字形式的流数据;选择装置，用于根据由具有信息的终端设备设置的分配条件，从由接收装置接收的流数据中选择预定的信息单元 再现功能，用于控制流分发服务器管理下的文件装置的文件I / O装置，以及用于将由选择装置选择的信息输出到文件装置;以及发送装置，用于在选择装置选择的信息之后向终端装置发送信息给终端装置 执行预定的处理引用 受限于预设的数据传输频带。

公开(公告)号：US06765251B2

公开(公告)日：2004-07-20

申请号：US09227935

申请日：1999-01-11

申请人： Eiji Hasunuma ,  Hideki Genjo ,  Shigeru Shiratake ,  Atsushi Hachisuka ,  Koji Taniguchi

发明人： Eiji Hasunuma ,  Hideki Genjo ,  Shigeru Shiratake ,  Atsushi Hachisuka ,  Koji Taniguchi

IPC分类号： H01L27108

CPC分类号： H01L27/10852 ,  H01L21/28568 ,  H01L21/76814 ,  H01L21/76831 ,  H01L27/10808

摘要： In the semiconductor device, in order to meet the demand of reduced diameter of a contact hole along with the miniaturization of the semiconductor device, an anti-HF side wall film which is not etched by a hydrofluoric acid, formed of an isolating film such as nitride film, is provided on the side wall of contact hole. Further, a second impurity region which is connected to one of the pair of n type source/drain regions and a first impurity region reaching a p type isolation region are provided in silicon substrate 1 near the lower end of contact hole. Because of this structure, it becomes possible to prevent expansion of the diameter for forming the interconnection layer, as desired in the miniaturized semiconductor device, and therefore a semiconductor device and manufacturing method thereof which stabilize operation characteristic of the semiconductor device can be provided.

摘要翻译： 在半导体装置中，为了满足半导体装置的小型化使接触孔的直径减小的要求，没有被氢氟酸腐蚀的抗HF侧壁膜由隔离膜形成，例如 氮化物膜设置在接触孔的侧壁上。 此外，在接触孔下端附近的硅衬底1中设置有连接到一对n型源极/漏极区域中的一个和到达p型隔离区域的第一杂质区域的第二杂质区域。 由于这种结构，可以根据小型半导体器件的需要防止用于形成互连层的直径的膨胀，因此可以提供稳定半导体器件的操作特性的半导体器件及其制造方法。

公开(公告)号：US06559494B1

公开(公告)日：2003-05-06

申请号：US08909309

申请日：1997-08-11

申请人： Koji Taniguchi

发明人： Koji Taniguchi

IPC分类号： H01L27108

CPC分类号： H01L27/10852 ,  H01L27/105 ,  H01L27/1052

摘要： In the fabrication of semiconductor devices, and particularly, semiconductor memories, a gate oxide film and a gate electrode are formed on a semiconductor substrate, and a silicon oxide film is formed on the gate electrode. Thereafter, the entire surface is covered with a silicon nitride film and then with an interlayer oxide film. Bit line contacts are formed in source/drain regions each provided between adjacent gate electrodes according to a SAC technique utilizing the silicon nitride film. In the other source/drain region, a hole is made in the silicon nitride film to form a storage node contact.

摘要翻译： 在半导体器件的制造中，特别是半导体存储器中，在半导体衬底上形成栅极氧化膜和栅电极，并且在栅电极上形成氧化硅膜。 此后，整个表面被氮化硅膜覆盖，然后用层间氧化膜覆盖。 根据采用氮化硅膜的SAC技术，在相邻栅电极之间的源/漏区中形成位线触点。 在另一个源极/漏极区域中，在氮化硅膜中形成孔以形成存储节点接触。

公开(公告)号：US06534377B2

公开(公告)日：2003-03-18

申请号：US09977273

申请日：2001-10-16

申请人： Koji Taniguchi

发明人： Koji Taniguchi

IPC分类号： H01L2120

CPC分类号： H01L28/91 ,  H01L27/0805

摘要： Providing a capacitance element which prevents short-circuit between adjacent storage node layers caused by an adhering conductive foreign matter. A method of manufacturing a capacitance element in which a plurality of aperture portions are formed in an insulation layer on a semiconductor substrate and a storage node layer is formed at inner surfaces of the aperture portions, comprising the steps of forming a plurality of aperture portions in an insulation layer from a surface of a silicon oxide film, forming a conductive layer so as to cover the insulation layer and the silicon oxide film, removing the conductive layer on the silicon oxide film so that the conductive layer remaining inside the aperture portions becomes storage node layers, and removing silicon oxide film.

摘要翻译： 提供一种电容元件，其防止由粘附的导电异物引起的相邻存储节点层之间的短路。一种制造其中多个开口部分形成在半导体衬底上的绝缘层中的电容元件的方法和存储节点 在所述开口部的内表面形成层，其特征在于，包括以下工序：从氧化硅膜的表面形成绝缘层的多个开口部，形成导电层以覆盖所述绝缘层和所述氧化硅膜 去除氧化硅膜上的导电层，使得留在孔部内的导电层成为存储节点层，并除去氧化硅膜。

公开(公告)号：US06445679B1

公开(公告)日：2002-09-03

申请号：US09220966

申请日：1998-12-23

申请人： Koji Taniguchi ,  Hideaki Tani

发明人： Koji Taniguchi ,  Hideaki Tani

IPC分类号： H04L1226

CPC分类号： H04L65/80 ,  H04L29/06 ,  H04L29/06027 ,  H04L47/10 ,  H04L47/11 ,  H04L47/20 ,  H04L47/2433 ,  H04L47/263 ,  H04L47/29 ,  Y02D50/10

摘要： A stream communication system has a plurality of nodes and a network to which each node is connected, the node comprises a stream transfer device to which the encoding stream that data attribute information for every data blocks are added, and has a periodicity in the data structure is transferred, at least one node is allocated as a managing node, and the managing node manages at least one monitoring target node and a control target node, the stream transfer device of the control target node comprises stream conversion section for adjusting an amount of the transfer data as the effective transmission rate coincides to the specified transmission rate based on the data priority decided from data attribute information, the stream transfer device of the monitoring target node comprises internal information notification section for notifying the managing node the state of a load of the node, and the stream transfer device of the managing node comprises feedback control section for recalculating the transmission rate for real time transmission, and for notifying the control target node the result as a parameter setting message based on the load state notified from the monitoring target node and the set transmission rate.

摘要翻译： 流通信系统具有多个节点和每个节点连接的网络，该节点包括流传输设备，每个数据块的数据属性信息被加到编码流，并且在数据结构中具有周期性 至少一个节点被分配为管理节点，并且管理节点管理至少一个监视目标节点和控制目标节点，控制目标节点的流传输设备包括流转换部分，用于调整 基于从数据属性信息决定的数据优先级，传输数据作为有效传输速率与指定传输速率一致，监视目标节点的流传输设备包括内部信息通知部分，用于通知管理节点的负载状态 节点，并且管理节点的流传输设备包括用于重新计算的反馈控制部分 处理用于实时传输的传输速率，并且基于从监视目标节点通知的负载状态和设定的传输速率，将控制目标节点通知作为参数设置消息的结果。

公开(公告)号：US4707419A

公开(公告)日：1987-11-17

申请号：US867814

申请日：1986-05-27

申请人： Takashi Ogura ,  Koichi Tanaka ,  Koji Taniguchi ,  Masaru Yoshida ,  Akiyoshi Mikami

发明人： Takashi Ogura ,  Koichi Tanaka ,  Koji Taniguchi ,  Masaru Yoshida ,  Akiyoshi Mikami

IPC分类号： H05B33/18 ,  B32B9/04 ,  B32B17/06

CPC分类号： H05B33/18 ,  Y10S428/917

摘要： The present invention provides a thin film EL device comprising an electrode layer, an emitting layer and an electrode layer formed on a substrate one over another, and an insulating layer interposed between the three layers, the emitting layer containing atoms of a rare-earth element and fluorine atoms in its host material, the atom ratio (F/RE) of the fluorine atoms (F) to the rare-earth atoms (RE) being adjusted to the range of 0.5 to 2.5, and a process for producing the EL device being characterized in that the emitting layer is prepared by forming a film under a condition substantially free from oxygen gas and/or moisture and subjecting the film to a heat treatment at a temperature of 200.degree. C. to 700.degree. C. so that the host material of the emitting layer contains atoms of a rare-earth element (RE) and fluorine atoms (F) in an adjusted atom ratio (F/RE) in the range of 0.5 to 2.5.The present invention affords a thin film EL device which emits, for example, a green luminescence with a high brightness.

摘要翻译： 本发明提供了一种薄膜EL器件，其包括电极层，发光层和形成在衬底上的电极层，以及介于三层之间的绝缘层，所述发射层含有稀土元素的原子 和氟原子在其主体材料中，氟原子（F）与稀土原子（RE）的原子比（F / RE）被调整到0.5至2.5的范围，以及制造EL器件的方法 其特征在于，通过在基本上不含氧气和/或水分的条件下形成膜并在200℃至700℃的温度下对膜进行热处理来制备发光层，使得主体 发光层的材料在0.5〜2.5的范围内含有稀土元素（RE）的原子和调整原子比（F / RE）的氟原子（F）。 本发明提供了例如以高亮度发出绿色发光的薄膜EL器件。