公开(公告)号：US4746628A

公开(公告)日：1988-05-24

申请号：US902114

申请日：1986-08-29

申请人： Yutaka Takafuji ,  Kohhei Kishi ,  Kohzo Yano

发明人： Yutaka Takafuji ,  Kohhei Kishi ,  Kohzo Yano

IPC分类号： H01L21/336 ,  H01L27/12 ,  H01L29/45 ,  H01L29/78 ,  H01L29/786 ,  H01L21/225 ,  H01L21/385 ,  H01L21/44 ,  H01L21/48

CPC分类号： H01L29/458 ,  H01L29/78 ,  H01L29/78618 ,  H01L29/78666 ,  H01L29/78681 ,  Y10S148/003

摘要： A thin film transistor (TFT) of a self-aligned structure, wherein a pair of a source electrode and a drain electrode are formed in alignment with a gate electrode and in contact with low resistance areas formed at both side portions of a semiconductor layer deposited on an insulating substrate. The low resistance areas are formed by the diffusion of metal atoms through heat-treatment.

摘要翻译： 一种自对准结构的薄膜晶体管（TFT），其中一对源电极和漏电极形成为与栅电极对准并与形成在沉积的半导体层的两侧部分的低电阻区域接触 在绝缘基板上。 低电阻区域是由金属原子通过热处理而扩散形成的。

公开(公告)号：US4469568A

公开(公告)日：1984-09-04

申请号：US446046

申请日：1982-12-01

申请人： Hiroaki Kato ,  Kohhei Kishi ,  Yutaka Takafuji

发明人： Hiroaki Kato ,  Kohhei Kishi ,  Yutaka Takafuji

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L29/49 ,  H01L29/786 ,  C25D5/44 ,  H01L49/02

CPC分类号： H01L21/28008 ,  H01L29/4908 ,  Y10S148/043 ,  Y10S148/117 ,  Y10S148/118

摘要： A method for making a thin-film transistor wherein a gate insulating layer is formed by anodizing two oxide layers on the substrate and then etching the assembly to completely remove the uppermost one of these layers to leave the lowermost layer so as to serve as the gate insulating layer.

摘要翻译： 一种用于制造薄膜晶体管的方法，其中通过在基板上阳极氧化两个氧化物层，然后蚀刻该组件以完全去除这些层中的最上面的一个以形成栅极绝缘层，以离开最下层以便用作栅极 绝缘层。

公开(公告)号：US08361882B2

公开(公告)日：2013-01-29

申请号：US13139988

申请日：2009-08-21

申请人： Michiko Takei ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Shin Matsumoto ,  Kazuo Nakagawa ,  Yutaka Takafuji

发明人： Michiko Takei ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Shin Matsumoto ,  Kazuo Nakagawa ,  Yutaka Takafuji

IPC分类号： H01L21/30 ,  H01L29/06

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L29/66772 ,  H01L29/78636

摘要： Provided is a semiconductor device manufacturing method wherein the following steps are performed; a step of forming at least a part of an element on a base body layer, a step of forming a peeling layer, a step of forming a planarizing film; a step of forming a die by separating the base body layer at a separating region; a step of bonding the die to a substrate by bonding the die on the planarizing film; and a step of peeling and removing a part of the base body layer along the peeling layer. Prior to the step of forming the die, a step of forming a groove opened on the surface of the planarizing film such that at least a part of the separating region is included on the bottom surface of the groove, and forming the die such that the die has a polygonal outer shape wherein all the internal angles are obtuse by forming the groove is performed.

摘要翻译： 提供一种其中执行以下步骤的半导体器件制造方法; 在基体层上形成元素的至少一部分的步骤，形成剥离层的步骤，形成平坦化膜的步骤; 通过在分离区域分离基体层而形成模具的步骤; 通过将该模具接合在平坦化膜上而将芯片接合到基板的步骤; 以及沿剥离层剥离和去除基体层的一部分的步骤。 在成形模具的步骤之前，形成在平坦化膜的表面上开口的槽，使得至少一部分分离区域包含在槽的底面上，并且形成模具，使得 模具具有多边形外形，其中通过形成凹槽来执行所有内角都是钝的。

公开(公告)号：US08207046B2

公开(公告)日：2012-06-26

申请号：US12682221

申请日：2008-10-21

申请人： Michiko Takei ,  Shin Matsumoto ,  Yasumori Fukushima ,  Yutaka Takafuji

发明人： Michiko Takei ,  Shin Matsumoto ,  Yasumori Fukushima ,  Yutaka Takafuji

IPC分类号： H01L21/02

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： To prevent bubbles from occurring along a transfer interface, the present method includes the steps of: forming a peeled layer 10 in a transferred member 6 by implanting a peeled-layer forming substance into the transferred member 6; forming a planar surface in the transferred member 6 by planarizing a surface of the transferred member 6; forming a composite including the transferred member 6 and a glass substrate 2 by directly combining the transferred member 6 via the planar surface with a surface of the glass substrate 2; and peeling a part of the transferred member 6 from the composite along the peeled layer 10 serving as an interface by heat-treating the composite.

摘要翻译： 为了防止沿着转移界面发生气泡，本方法包括以下步骤：通过将剥离层形成物质注入到被转印元件6中，在转印元件6中形成剥离层10; 通过使转印部件6的表面平坦化，在被转印部件6中形成平面; 通过经由平面表面直接将转印部件6与玻璃基板2的表面直接组合，形成包括转印部件6和玻璃基板2的复合体; 以及通过热处理复合材料，沿着作为界面的剥离层10将复合材料的一部分从复合材料剥离。

公开(公告)号：US08188564B2

公开(公告)日：2012-05-29

申请号：US12743226

申请日：2008-07-24

申请人： Kazuhide Tomiyasu ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuo Nakagawa

发明人： Kazuhide Tomiyasu ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuo Nakagawa

IPC分类号： H01L27/12

CPC分类号： G02F1/13454 ,  H01L27/1229 ,  H01L27/1251 ,  H01L27/1266 ,  H01L29/66772

摘要： A method for manufacturing a semiconductor device including a thin film device unit including a TFT, and a peripheral device unit provided around the thin film device unit and including a semiconductor element, includes a first step of preparing a substrate, a second step of bonding the peripheral device unit directly to the substrate, and a third step of forming the thin film device unit on the substrate to which the peripheral device unit is bonded.

摘要翻译： 一种制造半导体器件的方法，包括：薄膜器件单元，包括TFT;以及周边器件单元，设置在所述薄膜器件单元周围并且包括半导体元件，包括准备衬底的第一步骤， 外围设备单元直接连接到基板，以及在与外围设备单元接合的基板上形成薄膜器件单元的第三步骤。

公开(公告)号：US20120038022A1

公开(公告)日：2012-02-16

申请号：US13259076

申请日：2009-10-26

申请人： Kazuhide Tomiyasu ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuo Nakagawa ,  Kenshi Tada ,  Michiko Takei ,  Shin Matsumoto

发明人： Kazuhide Tomiyasu ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuo Nakagawa ,  Kenshi Tada ,  Michiko Takei ,  Shin Matsumoto

IPC分类号： H01L29/02 ,  B32B3/00

CPC分类号： H01L27/1218 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1266 ,  H01L29/66772 ,  Y10T428/24355

摘要： Disclosed is a glass substrate (20) that is capable of constituting a semiconductor device (10) when a monocrystalline silicon thin film (90) is provided on the surface of the substrate by transfer. The surface of the glass substrate (20) has a receiving surface (22) onto which the monocrystalline silicon thin film (90) can be provided. The height of the ripples on the receiving surface (22) having a period of 200 to 500 microns is no more than 0.40 nm.

摘要翻译： 公开了当通过转印在基板的表面上设置单晶硅薄膜（90）时能够构成半导体器件（10）的玻璃基板（20）。 玻璃基板（20）的表面具有能够设置单晶硅薄膜（90）的接收面（22）。 在接收表面（22）上具有200至500微米的周期的波纹的高度不大于0.40nm。

公开(公告)号：US20110272694A1

公开(公告)日：2011-11-10

申请号：US12674560

申请日：2008-09-08

申请人： Michiko Takei ,  Shin Matsumoto ,  Kazuhide Tomiyasu ,  Yasumori Fukushima ,  Yutaka Takafuji

发明人： Michiko Takei ,  Shin Matsumoto ,  Kazuhide Tomiyasu ,  Yasumori Fukushima ,  Yutaka Takafuji

IPC分类号： H01L29/24 ,  H01L21/762 ,  B32B3/00 ,  H01L29/04

CPC分类号： H01L27/1266 ,  H01L21/02076 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/78603 ,  Y10T428/24355

摘要： The present invention is intended to provide a glass substrate (20), made of an insulating material, which can constitute a semiconductor apparatus (10) by transferring a single crystal silicon film (50) or a substrate including a semiconductor device onto a surface (24) of the insulating substrate, a transferred surface (26) being part of the surface (24), the single crystal silicon film (50) capable of being provided on the transferred surface (26), and the transferred surface (26) having an arithmetic mean roughness of not more than 0.4 nm.

摘要翻译： 本发明旨在提供一种由绝缘材料制成的玻璃基板（20），其可以通过将单晶硅膜（50）或包括半导体器件的基板转移到表面上而构成半导体装置（10） 24），作为表面（24）的一部分的转印面（26），能够设置在转印面（26）上的单晶硅膜（50），转印面（26）具有 算术平均粗糙度不大于0.4nm。

公开(公告)号：US08017492B2

公开(公告)日：2011-09-13

申请号：US12222598

申请日：2008-08-12

申请人： Yasumori Fukushima ,  Masao Moriguchi ,  Yutaka Takafuji

发明人： Yasumori Fukushima ,  Masao Moriguchi ,  Yutaka Takafuji

IPC分类号： H01L21/76

CPC分类号： H01L21/84 ,  H01L21/32 ,  H01L21/76254 ,  H01L27/1203 ,  H01L29/78654

摘要： A method for fabricating a semiconductor device according to the present invention is a method for fabricating a semiconductor device including a substrate layer including a plurality of first regions each having an active region and a plurality of second regions each being provided between adjacent ones of the first region. The fabrication method includes an isolation insulation film formation step of forming an isolation insulation film in each of the second regions so that a surface of the isolation insulation film becomes at the same height as that of a surface of a gate oxide film covering the active region, a peeling layer formation step of forming a peeling layer by ion-implanting hydrogen into the substrate layer after the isolation insulation film formation step, and a separation step of separating part of the substrate layer along the peeling layer.

摘要翻译： 根据本发明的制造半导体器件的方法是一种半导体器件的制造方法，该半导体器件包括：衬底层，该衬底层包括多个第一区域，每个第一区域具有有源区域和多个第二区域， 地区。 制造方法包括隔离绝缘膜形成步骤，在每个第二区域中形成隔离绝缘膜，使得隔离绝缘膜的表面变得与覆盖有源区域的栅极氧化物膜的表面相同的高度 剥离层形成步骤，在隔离绝缘膜形成步骤之后，通过将氢离子注入到衬底层中形成剥离层，以及分离步骤，用于沿剥离层分离衬底层的一部分。

公开(公告)号：US08008205B2

公开(公告)日：2011-08-30

申请号：US12159582

申请日：2006-10-13

申请人： Yasumori Fukushima ,  Yutaka Takafuji ,  Michiko Takei ,  Kazuhide Tomiyasu

发明人： Yasumori Fukushima ,  Yutaka Takafuji ,  Michiko Takei ,  Kazuhide Tomiyasu

IPC分类号： H01L21/311

CPC分类号： H01L21/84 ,  H01L21/26506 ,  H01L21/76254 ,  H01L21/823475 ,  H01L21/823481 ,  H01L27/12 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of the present invention includes a first planarization film formation step of forming, in at least part of a flat portion of the second regions, a first planarization film so as to have a uniform thickness; a second planarization film formation step of forming a second planarization film between the first planarization films to be coplanar with a surface of the first planarization film; a peeling layer formation step of forming a peeling layer by ion implantation of a peeling material into the base layer via the first planarization film or the second planarization film; and a separation step of separating part of the base layer along the peeling layer.

摘要翻译： 本发明的方法包括：第一平坦化膜形成步骤，在第二区域的平坦部分的至少一部分中形成具有均匀厚度的第一平坦化膜; 第二平坦化膜形成步骤，在所述第一平坦化膜之间形成与所述第一平坦化膜的表面共面的第二平坦化膜; 剥离层形成步骤，通过经由第一平坦化膜或第二平坦化膜将剥离材料离子注入基底层来形成剥离层; 以及分离步骤，用于沿着剥离层分离基底层的一部分。

公开(公告)号：US07935599B2

公开(公告)日：2011-05-03

申请号：US11732675

申请日：2007-04-04

申请人： Mark A. Crowder ,  Yutaka Takafuji

发明人： Mark A. Crowder ,  Yutaka Takafuji

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/336

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/66795 ,  H01L29/7854

摘要： A method is provided for removing reentrant stringers in the fabrication of a nanowire transistor (NWT). The method provides a cylindrical nanostructure with an outside surface axis overlying a substrate surface. The nanostructure includes an insulated semiconductor core. A conductive film is conformally deposited overlying the nanostructure, to function as a gate strap or a combination gate and gate strap. A hard mask insulator is deposited overlying the conductive film and selected regions of the hard mask are anisotropically plasma etched. As a result, a conductive film gate electrode is formed substantially surrounding a cylindrical section of nanostructure. Inadvertently, conductive film reentrant stringers may be formed adjacent the nanostructure outside surface axis, made from the conductive film. The method etches, and so removes the conductive film reentrant stringers.

摘要翻译： 提供了一种用于在制造纳米线晶体管（NWT）中去除可折入桁条的方法。 该方法提供了一种圆柱形纳米结构，其外表面轴线覆盖在基底表面上。 纳米结构包括绝缘半导体芯。 导电膜共形沉积在纳米结构上方，用作栅极带或组合栅极和栅极带。 沉积覆盖导电膜的硬掩模绝缘体，硬掩模的选定区域是各向异性等离子体蚀刻。 结果，基本上围绕纳米结构的圆柱形部分形成导电膜栅电极。 无意中，可以形成与由导电膜制成的外表面轴线附近的导电膜折入桁条。 该方法蚀刻，因此去除导电膜可折入桁条。