公开(公告)号：US08545998B2

公开(公告)日：2013-10-01

申请号：US13333509

申请日：2011-12-21

申请人： Bob Kong ,  Igor Ivanov ,  Zhi-Wen Sun ,  Jinhong Tong

发明人： Bob Kong ,  Igor Ivanov ,  Zhi-Wen Sun ,  Jinhong Tong

IPC分类号： B32B9/00 ,  B32B19/00 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： C23C18/44 ,  C23C18/1605 ,  C23C18/1607 ,  C23C18/1637 ,  C23C18/1844 ,  H01L21/02068 ,  H01L21/0332 ,  H01L21/288 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76849 ,  H01L21/7687 ,  H01L27/1052 ,  H01L28/65 ,  Y10T428/12493 ,  Y10T428/12875 ,  Y10T428/12903 ,  Y10T428/24917

摘要： Embodiments of the current invention describe a method of plating platinum selectively on a copper film using a self-initiated electroless process. In particular, platinum films are plated onto very thin copper films having a thickness of less than 300 angstroms. The electroless plating solution and the resulting structure are also described. This process has applications in the semiconductor processing of logic devices, memory devices, and photovoltaic devices.

公开(公告)号：US20100055422A1

公开(公告)日：2010-03-04

申请号：US12200841

申请日：2008-08-28

申请人： Bob Kong ,  Zhi-Wen Sun ,  Igor Ivanov ,  Jinhong Tong

发明人： Bob Kong ,  Zhi-Wen Sun ,  Igor Ivanov ,  Jinhong Tong

IPC分类号： B32B3/10 ,  C23C18/44 ,  H01L21/44

CPC分类号： C23C18/44 ,  C23C18/1605 ,  C23C18/1607 ,  C23C18/1637 ,  C23C18/1844 ,  H01L21/02068 ,  H01L21/0332 ,  H01L21/288 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76849 ,  H01L21/7687 ,  H01L27/1052 ,  H01L28/65 ,  Y10T428/12493 ,  Y10T428/12875 ,  Y10T428/12903 ,  Y10T428/24917

摘要： Embodiments of the current invention describe a method of plating platinum selectively on a copper film using a self-initiated electroless process. In particular, platinum films are plated onto very thin copper films having a thickness of less than 300 angstroms. The electroless plating solution and the resulting structure are also described. This process has applications in the semiconductor processing of logic devices, memory devices, and photovoltaic devices.

摘要翻译： 本发明的实施方案描述了使用自引发的无电镀方法在铂膜上选择性镀铂的方法。 特别地，铂膜被镀在厚度小于300埃的非常薄的铜膜上。 还描述了化学镀溶液和所得结构。 该方法在逻辑器件，存储器件和光伏器件的半导体处理中具有应用。

公开(公告)号：US20100203731A1

公开(公告)日：2010-08-12

申请号：US12368110

申请日：2009-02-09

申请人： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

发明人： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

IPC分类号： H01L21/306 ,  C09D1/00 ,  H01L21/34

CPC分类号： H01L21/02068 ,  C23C18/1651 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76852 ,  H01L21/76874

摘要： Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.

摘要翻译： 本发明的实施方案描述了处理半导体衬底的方法，其包括将锌化溶液施加到半导体衬底上以在含钛层上形成锌钝化层，所述锌化溶液包含锌盐FeCl 3和pH调节剂。

公开(公告)号：US08551560B2

公开(公告)日：2013-10-08

申请号：US12471310

申请日：2009-05-22

申请人： Jinhong Tong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Nitin Kumar ,  Bob Kong ,  Zachary Fresco

发明人： Jinhong Tong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Nitin Kumar ,  Bob Kong ,  Zachary Fresco

IPC分类号： C23C18/18 ,  C23C18/34 ,  C23C18/36 ,  C23C18/50

CPC分类号： H01L21/288 ,  C23C18/1605 ,  C23C18/168 ,  C23C18/50 ,  H01L21/0332 ,  H01L21/3105 ,  H01L21/76829 ,  H01L21/76849

摘要： Methods for improving selective deposition of a capping layer on a patterned substrate are presented, the method including: receiving the patterned substrate, the patterned substrate including a conductive region and a dielectric region; forming a molecular masking layer (MML) on the dielectric region; preparing an electroless (ELESS) plating bath, where the ELESS plating bath includes: a cobalt (Co) ion source: a complexing agent: a buffer: a tungsten (W) ion source: and a reducing agent; and reacting the patterned substrate with the ELESS plating bath for an ELESS period at an ELESS temperature and an ELESS pH so that the capping layer is selectively formed on the conductive region. In some embodiments, methods further include a pH adjuster for adjusting the ELESS pH to a range of approximately 9.0 pH to 9.2 pH. In some embodiments, the pH adjuster is tetramethylammonium hydroxide (TMAH). In some embodiments, the MML is hydrophilic.

摘要翻译： 提出了用于改善在图案化衬底上的覆盖层的选择性沉积的方法，所述方法包括：接收图案化衬底，所述图案化衬底包括导电区域和电介质区域; 在介电区上形成分子屏蔽层（MML）; 制备无电镀（ELESS）电镀浴，其中ELESS电镀浴包括：钴（Co）离子源：络合剂：缓冲剂：钨（W）离子源和还原剂; 并在ELESS温度和ELESS pH下使图案化衬底与ELESS电镀浴反应ELESS周期，从而在导电区域上选择性地形成覆盖层。 在一些实施方案中，方法还包括用于将ELESS pH调节至约9.0 pH至9.2 pH范围的pH调节剂。 在一些实施方案中，pH调节剂是氢氧化四甲基铵（TMAH）。 在一些实施方案中，MML是亲水的。

公开(公告)号：US08143164B2

公开(公告)日：2012-03-27

申请号：US12368110

申请日：2009-02-09

申请人： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

发明人： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02068 ,  C23C18/1651 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76852 ,  H01L21/76874

摘要： Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.

摘要翻译： 本发明的实施方案描述了处理半导体衬底的方法，其包括将锌化溶液施加到半导体衬底上以在含钛层上形成锌钝化层，所述锌化溶液包含锌盐FeCl 3和pH调节剂。

公开(公告)号：US20120325109A1

公开(公告)日：2012-12-27

申请号：US13335011

申请日：2011-12-22

申请人： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

发明人： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

IPC分类号： C09D1/00

CPC分类号： H01L21/02068 ,  C23C18/1651 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76852 ,  H01L21/76874

摘要： Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.

摘要翻译： 本发明的实施方案描述了处理半导体衬底的方法，其包括将锌化溶液施加到半导体衬底上以在含钛层上形成锌钝化层，所述锌化溶液包含锌盐FeCl 3和pH调节剂。

公开(公告)号：US20090291275A1

公开(公告)日：2009-11-26

申请号：US12471310

申请日：2009-05-22

申请人： Jinhong Tong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Nitin Kumar ,  Bob Kong ,  Zachary Fresco

发明人： Jinhong Tong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Nitin Kumar ,  Bob Kong ,  Zachary Fresco

IPC分类号： B32B3/00 ,  B05D5/12 ,  B05D3/04

CPC分类号： H01L21/288 ,  C23C18/1605 ,  C23C18/168 ,  C23C18/50 ,  H01L21/0332 ,  H01L21/3105 ,  H01L21/76829 ,  H01L21/76849

摘要： Methods for improving selective deposition of a capping layer on a patterned substrate are presented, the method including: receiving the patterned substrate, the patterned substrate including a conductive region and a dielectric region; forming a molecular masking layer (MML) on the dielectric region; preparing an electroless (ELESS) plating bath, where the ELESS plating bath includes: a cobalt (Co) ion source: a complexing agent: a buffer: a tungsten (W) ion source: and a reducing agent; and reacting the patterned substrate with the ELESS plating bath for an ELESS period at an ELESS temperature and an ELESS pH so that the capping layer is selectively formed on the conductive region. In some embodiments, methods further include a pH adjuster for adjusting the ELESS pH to a range of approximately 9.0 pH to 9.2 pH. In some embodiments, the pH adjuster is tetramethylammonium hydroxide (TMAH). In some embodiments, the MML is hydrophilic.

摘要翻译： 提出了用于改善在图案化衬底上的覆盖层的选择性沉积的方法，所述方法包括：接收图案化衬底，所述图案化衬底包括导电区域和电介质区域; 在介电区上形成分子屏蔽层（MML）; 制备无电镀（ELESS）电镀浴，其中ELESS电镀浴包括：钴（Co）离子源：络合剂：缓冲剂：钨（W）离子源和还原剂; 并在ELESS温度和ELESS pH下使图案化衬底与ELESS电镀浴反应ELESS周期，从而在导电区域上选择性地形成覆盖层。 在一些实施方案中，方法还包括用于将ELESS pH调节至约9.0 pH至9.2 pH范围的pH调节剂。 在一些实施方案中，pH调节剂是氢氧化四甲基铵（TMAH）。 在一些实施方案中，MML是亲水的。

公开(公告)号：US08859427B2

公开(公告)日：2014-10-14

申请号：US13335011

申请日：2011-12-22

申请人： Bob Kong ,  Tony Chiang ,  Chi-I Lang ,  Zhi-Wen Sun ,  Jinhong Tong

发明人： Bob Kong ,  Tony Chiang ,  Chi-I Lang ,  Zhi-Wen Sun ,  Jinhong Tong

IPC分类号： H01L21/302 ,  C23C18/54 ,  H01L21/288 ,  H01L21/768 ,  H01L21/02 ,  C23C18/16

CPC分类号： H01L21/02068 ,  C23C18/1651 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76852 ,  H01L21/76874

摘要： Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.

摘要翻译： 本发明的实施方案描述了处理半导体衬底的方法，其包括将锌化溶液施加到半导体衬底上以在含钛层上形成锌钝化层，所述锌化溶液包含锌盐FeCl 3和pH调节剂。

公开(公告)号：US20120295436A1

公开(公告)日：2012-11-22

申请号：US13547856

申请日：2012-07-12

申请人： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

发明人： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

IPC分类号： H01L21/768

CPC分类号： H01L21/02068 ,  C23C18/1651 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76852 ,  H01L21/76874

摘要： Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.

摘要翻译： 本发明的实施方案描述了处理半导体衬底的方法，其包括将锌化溶液施加到半导体衬底上以在含钛层上形成锌钝化层，所述锌化溶液包含锌盐FeCl 3和pH调节剂。

公开(公告)号：US07678607B2

公开(公告)日：2010-03-16

申请号：US11702725

申请日：2007-02-05

申请人： Tony Chiang ,  Chi-I Lang ,  Zhi-wen Sun ,  Jinhong Tong ,  Nitin Kumar

发明人： Tony Chiang ,  Chi-I Lang ,  Zhi-wen Sun ,  Jinhong Tong ,  Nitin Kumar

IPC分类号： H01L21/00

CPC分类号： H01L45/04 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633

摘要： Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.