公开(公告)号：US20070131562A1

公开(公告)日：2007-06-14

申请号：US11298643

申请日：2005-12-08

申请人： Zhihong Wang ,  Ming-Kuei Tseng ,  Yuan Tian ,  Yongqi Hu ,  Stan Tsai

发明人： Zhihong Wang ,  Ming-Kuei Tseng ,  Yuan Tian ,  Yongqi Hu ,  Stan Tsai

IPC分类号： B23H3/00

CPC分类号： B23H5/08 ,  B24B37/04 ,  B24B57/02 ,  C25D5/06 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001

摘要： The embodiments of the invention generally relate to a method and apparatus for processing a substrate with reduced fluid consumption. Embodiments of the invention may be beneficially utilized in chemical mechanical and electrochemical mechanical polishing processes, among other processes where conservation of a processing fluid disposed on a rotating pad is desirable. In one embodiment, a processing fluid delivery arm assembly is provided that includes a nozzle assembly supported at a distal end of an arm. The nozzle assembly includes a nozzle that is adjustable to control the delivery of fluid exiting therefrom in two planes relative to the arm. In another embodiment, processing fluid in the form of electrolyte fills holes formed at least partially through the pad as they enter the wet zone, and a current is driven through the electrolyte, filling the holes between a substrate and an electrode disposed below the surface of the pad.

摘要翻译： 本发明的实施例一般涉及用于处理具有减少的流体消耗的基板的方法和装置。 本发明的实施例可以有利地用于化学机械和电化学机械抛光工艺以及其它工艺中，其中设置在旋转焊盘上的处理流体的保护是期望的。 在一个实施例中，提供了一种处理流体输送臂组件，其包括支撑在臂的远端处的喷嘴组件。 喷嘴组件包括可调节的喷嘴，以控制从相对于臂的两个平面离开的流体的输送。 在另一个实施方案中，电解液形式的处理流体在其进入湿区时填充至少部分地通过焊盘形成的孔，并且电流驱动通过电解质，填充基板和设置在下表面之下的电极之间的孔 垫

公开(公告)号：US20050218010A1

公开(公告)日：2005-10-06

申请号：US11123274

申请日：2005-05-05

申请人： Zhihong Wang ,  You Wang ,  Daxin Mao ,  Renhe Jia ,  Stan Tsai ,  Yongqi Hu ,  Yuan Tian ,  Liang-Yuh Chen

发明人： Zhihong Wang ,  You Wang ,  Daxin Mao ,  Renhe Jia ,  Stan Tsai ,  Yongqi Hu ,  Yuan Tian ,  Liang-Yuh Chen

IPC分类号： B23H3/08 ,  B23H5/08 ,  C09G1/02 ,  C25F3/02 ,  H01L21/321 ,  H01L21/768

CPC分类号： C25F3/02 ,  B23H5/08 ,  C09G1/02 ,  H01L21/32125 ,  H01L21/7684

摘要： Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.

摘要翻译： 提供了用于处理其上设置有导电材料层的基板的组合物和方法。 在一个实施方案中，提供了一种用于处理其上设置导电材料层的基材的组合物，其组成包括酸性电解质，螯合剂，缓蚀剂，钝化聚合物材料，pH调节剂，溶剂和 pH为约3至约10.该组合物用于在导电材料层上形成钝化层的方法，研磨钝化层以暴露导电材料层的一部分，向衬底施加偏压，以及去除 导电材料层。

公开(公告)号：US20070153453A1

公开(公告)日：2007-07-05

申请号：US11327527

申请日：2006-01-05

申请人： You Wang ,  Renhe Jia ,  Stan Tsai ,  Yongqi Hu ,  Zhihong Wang ,  Jie Diao ,  Gerald Alonzo

发明人： You Wang ,  Renhe Jia ,  Stan Tsai ,  Yongqi Hu ,  Zhihong Wang ,  Jie Diao ,  Gerald Alonzo

IPC分类号： H05K5/00 ,  H05K3/10

CPC分类号： C25F7/00 ,  B23H5/08 ,  B24B37/20 ,  Y10T29/49155 ,  Y10T29/49156

摘要： Embodiments of a pad assembly for processing a substrate are provided. The pad assembly includes a plurality of discrete members and a plurality of apertures. Each of the plurality of discrete members include a first conductive layer and a second conductive layer, with an isolation layer therebetween, and a recess for byproduct accumulation. The second conductive layer comprises a plurality of reaction surfaces that are orthogonal to the upper and lower surfaces of the pad assembly.

摘要翻译： 提供了用于处理基板的垫组件的实施例。 垫组件包括多个分立构件和多个孔。 多个离散构件中的每一个包括第一导电层和第二导电层，其间具有隔离层，以及用于副产物积累的凹部。 第二导电层包括与焊盘组件的上表面和下表面正交的多个反应表面。

公开(公告)号：US20070161250A1

公开(公告)日：2007-07-12

申请号：US11328958

申请日：2006-01-09

申请人： You Wang ,  Zhihong Wang ,  Renhe Jia ,  Stan Tsai ,  Yongqi Hu

发明人： You Wang ,  Zhihong Wang ,  Renhe Jia ,  Stan Tsai ,  Yongqi Hu

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/7684 ,  B23H5/08 ,  H01L21/32125

摘要： Aspects of the present invention include a method and an apparatus that may be utilized to reduce dishing and improve cleaning efficiency of a material layer residue (e.g., copper residual) by varying a substrate potential in a substrate processing system. For example, by utilizing multiple polishing steps and applying different voltages (e.g., while a substrate is being in a polishing station), ECMP can be used to effectively reduce dishing and it can be used to enhance copper residual cleaning as well as minimizing a possibility of arcing, which can occur at the end of the polishing process, when a substrate is moved from a polishing station.

摘要翻译： 本发明的方面包括可以通过改变衬底处理系统中的衬底电位来减少凹陷并提高材料层残留物（例如铜残留物）的清洁效率的方法和装置。 例如，通过利用多个抛光步骤和施加不同的电压（例如，当衬底处于抛光站中时），ECMP可以用于有效地减少凹陷，并且可以用于增强铜残留清洁以及最小化可能性 当抛光工位移动基板时，可能在抛光过程结束时发生电弧。

公开(公告)号：US20070209946A1

公开(公告)日：2007-09-13

申请号：US11370474

申请日：2006-03-08

申请人： Zhihong Wang ,  Yongqi Hu ,  Stan Tsai

发明人： Zhihong Wang ,  Yongqi Hu ,  Stan Tsai

IPC分类号： B23H5/06

CPC分类号： B23H5/08 ,  B24B53/017 ,  C25F3/02 ,  C25F7/00

摘要： A method and apparatus for evaluating a conditioned electrochemical mechanical polishing pad are provided. A polishing pad is conditioned using a first set of process conditions. A sheet wafer and a residue wafer are polished on the polishing pad. The removal rates of one or more materials from the sheet wafer and the residue wafer are measured. A normalized removal rate is calculated. The polishing pad is further conditioned if the normalized removal rate is not within a minimum value and a maximum value. In one embodiment, the normalized removal rate comprises a ratio of the removal rate of the residue wafer to the removal rate of the sheet wafer.

摘要翻译： 提供了一种评价调理电化学机械抛光垫的方法和装置。 使用第一组工艺条件对抛光垫进行调理。 在抛光垫上抛光片状晶片和残留晶片。 测量来自片状晶片和残留晶片的一种或多种材料的去除速率。 计算归一化的去除率。 如果归一化的去除速率不在最小值和最大值内，抛光垫被进一步调节。 在一个实施例中，归一化去除速率包括残余晶片的去除速率与片晶片的去除速率的比率。

公开(公告)号：US20060196778A1

公开(公告)日：2006-09-07

申请号：US11342179

申请日：2006-01-27

申请人： Renhe Jia ,  Zhihong Wang ,  Yuan Tian ,  Huyen Tran ,  Daxin Mao ,  Stan Tsai ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

发明人： Renhe Jia ,  Zhihong Wang ,  Yuan Tian ,  Huyen Tran ,  Daxin Mao ,  Stan Tsai ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

IPC分类号： B23H9/00 ,  C25D17/00

CPC分类号： B23H5/08 ,  B24B37/042 ,  C25F3/08

摘要： Methods for polishing tungsten are provided. During ECMP, increasing the voltage to the pad is not always enough to increase the polishing rate. When polishing tungsten, simply increasing the applied voltage will, in some cases, actually decrease the removal rate. By increasing the down force pressure between the polishing pad and the substrate, the applied voltage, and the rotation speed of the substrate and the polishing pad, the tungsten removal rate will also increase.

摘要翻译： 提供钨的抛光方法。 在ECMP期间，增加焊盘的电压并不总是足以提高抛光速率。 抛光钨时，简单地增加施加的电压将在某些情况下实际上降低去除率。 通过增加抛光垫和基板之间的下压力，施加电压以及基板和抛光垫的旋转速度，钨去除率也将增加。

公开(公告)号：US20050077188A1

公开(公告)日：2005-04-14

申请号：US10940603

申请日：2004-09-14

申请人： Daxin Mao ,  Renhe Jia ,  Zhihong Wang ,  Yuan Tian ,  Feng Liu ,  Vladimir Galburt ,  Sen Ko ,  Stan Tsai ,  Liang-Yuh Chen

发明人： Daxin Mao ,  Renhe Jia ,  Zhihong Wang ,  Yuan Tian ,  Feng Liu ,  Vladimir Galburt ,  Sen Ko ,  Stan Tsai ,  Liang-Yuh Chen

IPC分类号： B23H5/08 ,  B24B37/013 ,  B24B49/04 ,  B24B49/10 ,  C25F7/00 ,  H01L21/304 ,  H01L21/3063 ,  C25F3/00

CPC分类号： B24B37/013 ,  B23H5/08 ,  B24B49/04 ,  B24B49/10

摘要： A method and apparatus for electrochemically processing a substrate is provided. In one embodiment, a method for electrochemically processing a substrate includes the steps of establishing an electrically-conductive path through an electrolyte between an exposed layer of barrier material on the substrate and an electrode, electrochemically removing a portion of the exposed layer during a first electrochemical processing step in a barrier processing station, detecting an endpoint of the first electrochemical processing step at or just prior to breakthrough of the exposed layer of barrier material, electrochemically processing the exposed layer of barrier material in a second electrochemical processing step in the barrier processing station, and detecting an endpoint of the second electrochemical processing step.

摘要翻译： 提供了一种用于电化学处理衬底的方法和设备。 在一个实施例中，用于电化学处理衬底的方法包括以下步骤：在基底上的暴露的阻挡材料层与电极之间建立通过电解质的导电路径，在第一次电化学过程中电化学去除暴露层的一部分 在屏障处理站中的处理步骤，在暴露的阻挡材料层的穿透之前或之前检测第一电化学处理步骤的端点，在屏障处理站中的第二电化学处理步骤中电化学处理阻挡材料的暴露层 并且检测第二电化学处理步骤的端点。

公开(公告)号：US07699972B2

公开(公告)日：2010-04-20

申请号：US11370474

申请日：2006-03-08

申请人： Zhihong Wang ,  Yongqi Hu ,  Stan D. Tsai

发明人： Zhihong Wang ,  Yongqi Hu ,  Stan D. Tsai

IPC分类号： C25F3/02 ,  B23H5/06

CPC分类号： B23H5/08 ,  B24B53/017 ,  C25F3/02 ,  C25F7/00

摘要： A method and apparatus for evaluating a conditioned electrochemical mechanical polishing pad are provided. A polishing pad is conditioned using a first set of process conditions. A sheet wafer and a residue wafer are polished on the polishing pad. The removal rates of one or more materials from the sheet wafer and the residue wafer are measured. A normalized removal rate is calculated. The polishing pad is further conditioned if the normalized removal rate is not within a minimum value and a maximum value. In one embodiment, the normalized removal rate comprises a ratio of the removal rate of the residue wafer to the removal rate of the sheet wafer.

摘要翻译： 提供了一种评价调理电化学机械抛光垫的方法和装置。 使用第一组工艺条件对抛光垫进行调理。 在抛光垫上抛光片状晶片和残留晶片。 测量来自片状晶片和残留晶片的一种或多种材料的去除速率。 计算归一化的去除率。 如果归一化的去除速率不在最小值和最大值内，抛光垫被进一步调节。 在一个实施例中，归一化去除速率包括残余晶片的去除速率与片晶片的去除速率的比率。

公开(公告)号：US20070235344A1

公开(公告)日：2007-10-11

申请号：US11399560

申请日：2006-04-06

申请人： Renhe Jia ,  You Wang ,  Gerald Alonzo ,  Yongqi Hu ,  Zhihong Wang ,  Jie Diao ,  Stan D Tsai ,  Alpay Yilmaz ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

发明人： Renhe Jia ,  You Wang ,  Gerald Alonzo ,  Yongqi Hu ,  Zhihong Wang ,  Jie Diao ,  Stan D Tsai ,  Alpay Yilmaz ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

IPC分类号： B23H5/08

CPC分类号： B23H5/08 ,  C25F3/02 ,  H01L21/32125

摘要： A method for electrochemical mechanical polishing (ECMP) is disclosed. The polishing rate and surface finish of the layer on the wafer are improved by controlling the surface speed of both the platen and head, controlling the current applied to the pad, and preselecting the density of the perforations on the fully conductive polishing pad. ECMP produces much higher removal rates, good surface finishes, and good planarization efficiency at a lower down force. Generally, increasing the surface speed of both the platen and the head will increase the surface smoothness. Also, increasing the current density on the wafer will increase the surface smoothness. There is virtually no difference in the smoothness of the wafer surface between the center, middle, and edge of the wafer. For copper, removal rates of 10,000 Å/min and greater can be achieved.

摘要翻译： 公开了一种用于电化学机械抛光（ECMP）的方法。 通过控制压板和头部的表面速度，控制施加到垫的电流以及预选在全导电抛光垫上的穿孔密度来提高晶片上层的抛光速率和表面光洁度。 ECMP在较低的下压力下产生高得多的去除率，良好的表面光洁度和良好的平面化效率。 通常，增加压板和头部的表面速度将增加表面平滑度。 此外，增加晶片上的电流密度将增加表面平滑度。 在晶片的中心，中间和边缘之间的晶片表面的平滑度几乎没有差别。 对于铜，可以实现10,000 / min以上的去除率。

公开(公告)号：US07576007B2

公开(公告)日：2009-08-18

申请号：US11328958

申请日：2006-01-09

申请人： You Wang ,  Zhihong Wang ,  Renhe Jia ,  Stan D. Tsai ,  Yongqi Hu

发明人： You Wang ,  Zhihong Wang ,  Renhe Jia ,  Stan D. Tsai ,  Yongqi Hu

IPC分类号： H01L21/302

CPC分类号： H01L21/7684 ,  B23H5/08 ,  H01L21/32125

摘要： Aspects of the present invention include a method and an apparatus that may be utilized to reduce dishing and improve cleaning efficiency of a material layer residue (e.g., copper residual) by varying a substrate potential in a substrate processing system. For example, by utilizing multiple polishing steps and applying different voltages (e.g., while a substrate is being in a polishing station), ECMP can be used to effectively reduce dishing and it can be used to enhance copper residual cleaning as well as minimizing a possibility of arcing, which can occur at the end of the polishing process, when a substrate is moved from a polishing station.

摘要翻译： 本发明的方面包括可以通过改变衬底处理系统中的衬底电位来减少凹陷并提高材料层残留物（例如铜残留物）的清洁效率的方法和装置。 例如，通过利用多个抛光步骤和施加不同的电压（例如，当衬底处于抛光站中时），ECMP可以用于有效地减少凹陷，并且可以用于增强铜残留清洁以及最小化可能性 当抛光工位移动基板时，可能在抛光过程结束时发生电弧。