公开(公告)号：US20050079715A1

公开(公告)日：2005-04-14

申请号：US10956469

申请日：2004-10-01

申请人： Zhong Hua ,  Dong Li ,  Zhengquan Tan ,  Zhuang Li ,  Michael Kwan ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj

发明人： Zhong Hua ,  Dong Li ,  Zhengquan Tan ,  Zhuang Li ,  Michael Kwan ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj

IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/507 ,  H01L21/316 ,  H01L21/762 ,  H01L21/302 ,  H01L21/31 ,  H01L21/461 ,  H01L21/469

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/507 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229

摘要： A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.

摘要翻译： 一种沉积具有改进的间隙填充能力的高密度等离子体氧化硅层的方法。 在一个实施例中，该方法包括将由含硅源，含氧源和氦组成的工艺气体流入衬底处理室并从工艺气体形成等离子体。 氦流量相对于硅源和氧源的组合流量的比率在0.5:1和3.0:1之间。 在一个具体实施方案中，工艺气体由单硅烷（SiH 4），分子氧（O 2）和氦组成。

公开(公告)号：US08269167B2

公开(公告)日：2012-09-18

申请号：US13021435

申请日：2011-02-04

申请人： Paola deCecco ,  Bruno Schueler ,  David Reed ,  Michael Kwan ,  David Stephen Ballance

发明人： Paola deCecco ,  Bruno Schueler ,  David Reed ,  Michael Kwan ,  David Stephen Ballance

IPC分类号： H01J37/26

CPC分类号： G01N23/2273 ,  H01J37/26 ,  H01J2237/24585 ,  H03F1/26

摘要： A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

摘要翻译： 确定胶片中元素的分布特征的方法。 该方法包括激发沉积在第一膜中的元素的电子能量，获得与电子能量相关联的第一光谱，以及从第一光谱去除背景光谱。 删除背景值会生成已处理的光谱。 该方法还包括将经处理的光谱与具有与第一胶片相当的胶片中元素的已知模拟分布曲线进行匹配。 基于所处理的光谱与从所述一组模拟光谱中选择的模拟光谱的匹配，为第一胶片中的元素获得分布曲线。

公开(公告)号：US08610059B2

公开(公告)日：2013-12-17

申请号：US13593289

申请日：2012-08-23

申请人： Paola deCecco ,  Bruno Schueler ,  David Reed ,  Michael Kwan ,  David Stephen Ballance

发明人： Paola deCecco ,  Bruno Schueler ,  David Reed ,  Michael Kwan ,  David Stephen Ballance

IPC分类号： H01J37/26

CPC分类号： G01N23/2273 ,  H01J37/26 ,  H01J2237/24585 ,  H03F1/26

摘要： A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

公开(公告)号：US07411188B2

公开(公告)日：2008-08-12

申请号：US11218114

申请日：2005-08-31

申请人： Paola deCecco ,  Bruno Schueler ,  David Reed ,  Michael Kwan ,  Dave Ballance

发明人： Paola deCecco ,  Bruno Schueler ,  David Reed ,  Michael Kwan ,  Dave Ballance

IPC分类号： H01J49/44 ,  H01J37/26

CPC分类号： G01N23/2273 ,  H01J37/26 ,  H01J2237/24585 ,  H03F1/26

摘要： A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

公开(公告)号：US20060162661A1

公开(公告)日：2006-07-27

申请号：US11040712

申请日：2005-01-22

申请人： Kee Jung ,  Dale Du Bois ,  Lun Tsuei ,  Lihua Huang ,  Martin Seamons ,  Soovo Sen ,  Reza Arghavani ,  Michael Kwan

发明人： Kee Jung ,  Dale Du Bois ,  Lun Tsuei ,  Lihua Huang ,  Martin Seamons ,  Soovo Sen ,  Reza Arghavani ,  Michael Kwan

IPC分类号： H05H1/24 ,  C23C16/00 ,  H01L21/306 ,  C23F1/00 ,  B08B6/00

CPC分类号： C23C16/45574 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/0217 ,  H01L21/3185

摘要： A dual channel gas distributor can simultaneously distribute plasma species of an first process gas and a non-plasma second process gas into a process zone of a substrate processing chamber. The gas distributor has a localized plasma box with a first inlet to receive a first process gas, and opposing top and bottom plates that are capable of being electrically biased relative to one another to define a localized plasma zone in which a plasma of the first process gas can be formed. The top plate has a plurality of spaced apart gas spreading holes to spread the first process gas across the localized plasma zone, and the bottom plate has a plurality of first outlets to distribute plasma species of the plasma of the first process gas into the process zone. A plasma isolated gas feed has a second inlet to receive the second process gas and a plurality of second outlets to pass the second process gas into the process zone. A plasma isolator is between the second inlet and second outlets to prevent formation of a plasma of the second process gas in the plasma isolated gas feed.

摘要翻译： 双通道气体分配器可以将第一工艺气体和非等离子体第二工艺气体的等离子体种类同时分配到衬底处理室的工艺区域中。 气体分配器具有局部等离子体盒，其具有第一入口以接收第一工艺气体，以及相对的顶板和底板，其能够相对于彼此电偏置以限定局部等离子体区，其中第一工艺的等离子体 可以形成气体。 顶板具有多个间隔开的气体扩散孔，以将第一处理气体扩散通过局部等离子体区域，并且底板具有多个第一出口，用于将第一处理气体的等离子体的等离子体物质分配到处理区 。 等离子体隔离气体进料具有用于接收第二处理气体的第二入口和多个第二出口以将第二处理气体通入处理区。 等离子体隔离器位于第二入口和第二出口之间，以防止在等离子体隔离气体进料中形成第二工艺气体的等离子体。

公开(公告)号：US09201030B2

公开(公告)日：2015-12-01

申请号：US14542175

申请日：2014-11-14

申请人： Paola deCecco ,  Bruno Schueler ,  David Reed ,  Michael Kwan ,  David Stephen Ballance

发明人： Paola deCecco ,  Bruno Schueler ,  David Reed ,  Michael Kwan ,  David Stephen Ballance

IPC分类号： H01J37/26 ,  G01N23/227 ,  H03F1/26

CPC分类号： G01N23/2273 ,  H01J37/26 ,  H01J2237/24585 ,  H03F1/26

摘要： A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

摘要翻译： 确定胶片中元素的分布特征的方法。 该方法包括激发沉积在第一膜中的元素的电子能量，获得与电子能量相关联的第一光谱，以及从第一光谱去除背景光谱。 删除背景值会生成已处理的光谱。 该方法还包括将经处理的光谱与具有与第一胶片相当的胶片中元素的已知模拟分布曲线进行匹配。 基于所处理的光谱与从所述一组模拟光谱中选择的模拟光谱的匹配，为第一胶片中的元素获得分布曲线。

公开(公告)号：US20120318974A1

公开(公告)日：2012-12-20

申请号：US13593289

申请日：2012-08-23

申请人： Paola deCecco ,  Bruno Schueler ,  David Reed ,  Michael Kwan ,  David Stephen Ballance

发明人： Paola deCecco ,  Bruno Schueler ,  David Reed ,  Michael Kwan ,  David Stephen Ballance

IPC分类号： H01J49/44

CPC分类号： G01N23/2273 ,  H01J37/26 ,  H01J2237/24585 ,  H03F1/26

摘要： A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

摘要翻译： 确定胶片中元素的分布特征的方法。 该方法包括激发沉积在第一膜中的元素的电子能量，获得与电子能量相关联的第一光谱，以及从第一光谱去除背景光谱。 删除背景值会生成已处理的光谱。 该方法还包括将经处理的光谱与具有与第一胶片相当的胶片中元素的已知模拟分布曲线进行匹配。 基于所处理的光谱与从所述一组模拟光谱中选择的模拟光谱的匹配，为第一胶片中的元素获得分布曲线。

公开(公告)号：US20070010973A1

公开(公告)日：2007-01-11

申请号：US11218114

申请日：2005-08-31

申请人： Paola deCecco ,  Bruno Schueler ,  David Reed ,  Michael Kwan ,  Dave Ballance

发明人： Paola deCecco ,  Bruno Schueler ,  David Reed ,  Michael Kwan ,  Dave Ballance

IPC分类号： G06F15/00 ,  H03F1/26

CPC分类号： G01N23/2273 ,  H01J37/26 ,  H01J2237/24585 ,  H03F1/26

摘要： A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

摘要翻译： 确定胶片中元素的分布特征的方法。 该方法包括激发沉积在第一膜中的元素的电子能量，获得与电子能量相关联的第一光谱，以及从第一光谱去除背景光谱。 删除背景值会生成已处理的光谱。 该方法还包括将经处理的光谱与具有与第一胶片相当的胶片中元素的已知模拟分布曲线进行匹配。 基于所处理的光谱与从所述一组模拟光谱中选择的模拟光谱的匹配，为第一胶片中的元素获得分布曲线。

公开(公告)号：US20060105106A1

公开(公告)日：2006-05-18

申请号：US11055936

申请日：2005-02-11

申请人： Mihaela Balseanu ,  Kee Jung ,  Lihua Huang ,  Li-Qun Xia ,  Rongping Wang ,  Derek Witty ,  Lewis Stern ,  Martin Seamons ,  Hichem M'Saad ,  Michael Kwan

发明人： Mihaela Balseanu ,  Kee Jung ,  Lihua Huang ,  Li-Qun Xia ,  Rongping Wang ,  Derek Witty ,  Lewis Stern ,  Martin Seamons ,  Hichem M'Saad ,  Michael Kwan

IPC分类号： C23C16/00 ,  B05D3/00 ,  H05H1/24

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32082 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/3185 ,  H01L2924/0002 ,  H01L2924/00

摘要： A stressed film is formed on a substrate. The substrate is placed in a process zone and a plasma is formed of a process gas provided in the process zone, the process gas having silicon-containing gas and nitrogen-containing gas. A diluent gas such as nitrogen can also be added. The as-deposited stressed material can be exposed to ultraviolet radiation or electron beams to increase the stress value of the deposited material. In addition or in the alternative, a nitrogen plasma treatment can be used to increase the stress value of the material during deposition. Pulsed plasma methods to deposit stressed materials are also described.

摘要翻译： 在基板上形成应力膜。 将基板放置在处理区中，并且等离子体由设置在处理区中的工艺气体形成，工艺气体具有含硅气体和含氮气体。 还可以加入稀释气体如氮气。 沉积的应力材料可以暴露于紫外线辐射或电子束以增加沉积材料的应力值。 另外或替代地，可以使用氮等离子体处理来增加沉积期间材料的应力值。 还描述了用于沉积应力材料的脉冲等离子体方法。

公开(公告)号：US20150069230A1

公开(公告)日：2015-03-12

申请号：US14542175

申请日：2014-11-14

申请人： Paola deCecco ,  Bruno Schueler ,  David Reed ,  Michael Kwan ,  David Stephen Ballance

发明人： Paola deCecco ,  Bruno Schueler ,  David Reed ,  Michael Kwan ,  David Stephen Ballance

IPC分类号： G01N23/227

CPC分类号： G01N23/2273 ,  H01J37/26 ,  H01J2237/24585 ,  H03F1/26

摘要： A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

摘要翻译： 确定胶片中元素的分布特征的方法。 该方法包括激发沉积在第一膜中的元素的电子能量，获得与电子能量相关联的第一光谱，以及从第一光谱去除背景光谱。 删除背景值会生成已处理的光谱。 该方法还包括将经处理的光谱与具有与第一胶片相当的胶片中元素的已知模拟分布曲线进行匹配。 基于所处理的光谱与从所述一组模拟光谱中选择的模拟光谱的匹配，为第一胶片中的元素获得分布曲线。