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290 条记录 (耗时 0.035 秒)

    Density sensing device and fuel cell system with it
    4.
    发明授权
    Density sensing device and fuel cell system with it 有权
    密度传感装置和燃料电池系统

    公开(公告)号：US08161798B2

    公开(公告)日：2012-04-24

    申请号：US11889028

    申请日：2007-08-08

    申请人： Won-Hyouk Jang ,  Do-Young Kim ,  Si-Hyun Lee ,  Jung-Kurn Park ,  Myeong-Ju Ha ,  Sang-Min Jeon

    发明人： Won-Hyouk Jang ,  Do-Young Kim ,  Si-Hyun Lee ,  Jung-Kurn Park ,  Myeong-Ju Ha ,  Sang-Min Jeon

    IPC分类号： G01N9/00

    CPC分类号： G01N9/002 ,  G01N27/06 ,  G01N2291/02863 ,  G01N2291/0427 ,  H01M8/04194 ,  H01M8/04373 ,  H01M8/04447 ,  H01M8/04738 ,  H01M8/04798 ,  H01M8/1011 ,  H01M2008/1095 ,  Y02E60/523

    摘要： The disclosed is a density sensing device of a fuel cell system and a fuel cell system having the density sensing device. The density sensing device includes a density sensor that includes a collision sensor and a variable resistor coupled to the collision sensor. The collision sensor is dipped into a fuel solution, and the collisions of molecules of the fuel solution are detected in the collision sensor. The resistance of the variable resistor varies depending on an amount of the collision detected by the collision sensor. The resistance further is converted to a density by the use of a table that includes a relationship between resistance and density. The density sensing device can further include a sensor driver. The sensor driver can be a piezoelectric member that is attached to the collision sensor. The collision sensor vibrates together with the piezoelectric member when a driving signal is applied to the piezoelectric member, which improves the accuracy of the measurement of the density.

    摘要翻译： 所公开的是具有密度感测装置的燃料电池系统和燃料电池系统的密度感测装置。 密度感测装置包括密度传感器，其包括碰撞传感器和耦合到碰撞传感器的可变电阻器。 将碰撞传感器浸入燃料溶液中，并在碰撞传感器中检测燃料溶液的分子碰撞。 可变电阻器的电阻根据碰撞传感器检测到的碰撞量而变化。 电阻进一步通过使用包括电阻和密度之间的关系的表转换为密度。 密度感测装置还可以包括传感器驱动器。 传感器驱动器可以是附接到碰撞传感器的压电元件。 当将驱动信号施加到压电元件时，碰撞传感器与压电元件一起振动，这提高了密度测量的精度。

    GaN compound semiconductor light emitting element and method of manufacturing the same
    7.
    发明授权
    GaN compound semiconductor light emitting element and method of manufacturing the same 有权
    GaN化合物半导体发光元件及其制造方法

    公开(公告)号：US07964884B2

    公开(公告)日：2011-06-21

    申请号：US11577710

    申请日：2005-10-21

    申请人： Jong-Lam Lee

    发明人： Jong-Lam Lee

    IPC分类号： H01L33/00

    CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44

    摘要： The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact. Furthermore, a P-type electrode is partially formed on a P—GaN layer in a mesh form to thereby maximize the emission of photons generated in the active layer toward the N—GaN layer.

    摘要翻译： 本发明涉及一种氮化镓（GaN）化合物半导体发光元件（LED）及其制造方法。 本发明提供一种能够通过金属保护膜层和金属支撑层改善水平LED的特性的垂直GaN LED。 根据本发明，在垂直GaN LED的侧面和/或底面上形成厚度至少为10微米的厚金属保护膜层，以保护元件免受外部冲击并容易地分离芯片。 此外，当元件被操作时，使用金属基板代替蓝宝石基板来有效地将产生的热量释放到外部，使得LED可以适合于大功率应用，并且具有改善的光输出特性的元件也可以 制造。 形成金属支撑层以保护元件免于由于冲击而变形或损坏。 此外，P型电极以网格形式部分地形成在P-GaN层上，从而最大限度地发挥在有源层中朝向N-GaN层产生的光子。

    Digitally controlled oscillator with the wide operation range
    9.
    发明授权
    Digitally controlled oscillator with the wide operation range 有权
    数字控制振荡器具有较宽的工作范围

    公开(公告)号：US07932766B2

    公开(公告)日：2011-04-26

    申请号：US12364173

    申请日：2009-02-02

    申请人： Kwang Hee Choi ,  Hong June Park

    发明人： Kwang Hee Choi ,  Hong June Park

    IPC分类号： H03H11/26

    CPC分类号： H03L7/10 ,  H03K3/0315 ,  H03K2005/00058 ,  H03K2005/00221 ,  H03L7/0995 ,  H03L7/0998 ,  H03L2207/06

    摘要： There is provided a digitally controlled oscillator, which is capable of widening its operation range with maintaining its resolution and the maximum frequency at which it operates. The digitally controlled oscillator includes a phase compensation block, a coarse block, and a fine block. The phase compensation block 510 generating a PLL signal PLLCLK and a first clock signal CLK1 which has the same phase and frequency as the PLL signal, in response to a phase control signal DISABLE and a fourth clock signal CLK4. The coarse block 520 generating a second clock signal CLK2 and a third clock signal CLK3 which results from delaying the PLL signal PLLCLK and the first clock signal CLK1 for a given time, in response to a m(integer)-bit coarse A control signal COAR_A and an (m−1)-bit coarse B control signal COAR_B. The fine block generating the fourth clock signal CLK4 by applying interpolation to the second clock signal CLK2 and the third clock signal CLK3 in response to an n(integer)-bit first fine control signal FCB and a n-bit second fine control signal FC.

    摘要翻译： 提供了数字控制的振荡器，其能够在保持其分辨率和操作的最大频率的情况下扩大其操作范围。 数字控制振荡器包括相位补偿块，粗块和精细块。 响应于相位控制信号DISABLE和第四时钟信号CLK4，相位补偿块510产生PLL信号PLLCLK和与PLL信号具有相同相位和频率的第一时钟信号CLK1。 粗块520产生第二时钟信号CLK2和第三时钟信号CLK3，其响应于am（整数）位粗A控制信号COAR_A，延迟PLL信号PLLCLK和第一时钟信号CLK1给定时间， （m-1）位粗B控制信号COAR_B。 精细块响应于n（整数）位第一精细控制信号FCB和n位第二精细控制信号FC，通过对第二时钟信号CLK2和第三时钟信号CLK3施加内插来产生第四时钟信号CLK4。

    T-gate forming method for high electron mobility transistor and gate structure thereof
    10.
    发明授权
    T-gate forming method for high electron mobility transistor and gate structure thereof 有权
    用于高电子迁移率晶体管的T型栅极形成方法及其栅极结构

    公开(公告)号：US07932540B2

    公开(公告)日：2011-04-26

    申请号：US11700946

    申请日：2007-02-01

    申请人： Yoon-Ha Jeong ,  Kang-Sung Lee ,  Young-Su Kim ,  Yun-Ki Hong ,  Sung-Woo Jung

    发明人： Yoon-Ha Jeong ,  Kang-Sung Lee ,  Young-Su Kim ,  Yun-Ki Hong ,  Sung-Woo Jung

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7787 ,  H01L29/42316 ,  H01L29/66462

    摘要： A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.

    摘要翻译： 一种用于高电子迁移率晶体管的T形栅形成方法包括以下步骤：在半导体衬底上涂覆各自具有彼此不同的电子束灵敏度的第一，第二和第三抗蚀剂; 通过在半导体衬底上使用电子束然后选择性地显影第三抗蚀剂来执行第一曝光处理; 通过选择性地显影所述第二抗蚀剂来限定栅极头区域，以具有比所述第三抗蚀剂宽的显影宽度; 通过在半导体衬底上使用电子束进行第二曝光处理，然后在低于第二和第三步骤的显影的温度下，以弯曲形状选择性地显影第一抗蚀剂; 并将金属材料沉积在抗蚀剂上，然后去除它们以形成T形栅极。