公开(公告)号：US08450196B2

公开(公告)日：2013-05-28

申请号：US11924093

申请日：2007-10-25

申请人： Roland Rupp ,  Thomas Gutt ,  Michael Treu

发明人： Roland Rupp ,  Thomas Gutt ,  Michael Treu

IPC分类号： H01L21/28

CPC分类号： H01L21/0495 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/0485 ,  H01L21/268 ,  H01L21/2683 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66143 ,  H01L29/872

摘要： Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.

摘要翻译： 公开了一种包括SiC上电接触的集成电路的生产。 一个实施例提供在SiC衬底上制造电接触，其中通过在SiC衬底上照射和吸收激光脉冲在SiC衬底的边界表面上产生导电接触。

公开(公告)号：US20080258183A1

公开(公告)日：2008-10-23

申请号：US11789045

申请日：2007-04-23

申请人： Roland Rupp ,  Stefan Woehlert ,  Thomas Gutt ,  Michael Treu

发明人： Roland Rupp ,  Stefan Woehlert ,  Thomas Gutt ,  Michael Treu

IPC分类号： H01L29/80 ,  H01L27/095

CPC分类号： H01L29/47 ,  H01L21/0485 ,  H01L21/0495 ,  H01L21/268 ,  H01L21/32134 ,  H01L23/528 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66901 ,  H01L29/66909 ,  H01L29/808 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more metallization layers to obtain a substrate/metallization-layer compound or a metallization-layer compound, the compound comprising an etch-selectivity toward an etching medium which is different to that of the one or more metallization layers outside the area, and removing the one or more metallization layers in the area or outside the area, depending on the etching selectivity in the area or outside the area, by etching with the etching medium to form the device.

摘要翻译： 一种制造器件的方法包括将一个或多个金属化层沉积到衬底上，局部加热所述一个或多个金属化层的区域以获得衬底/金属化层化合物或金属化层化合物，所述化合物包括蚀刻 - 选择性不同于区域外的一个或多个金属化层的蚀刻介质的选择性，以及根据该区域或区域外的蚀刻选择性，去除该区域或区域外的一个或多个金属化层， 通过用蚀刻介质蚀刻以形成该器件。

公开(公告)号：US20080099769A1

公开(公告)日：2008-05-01

申请号：US11924093

申请日：2007-10-25

申请人： Roland Rupp ,  Thomas Gutt ,  Michael Treu

发明人： Roland Rupp ,  Thomas Gutt ,  Michael Treu

IPC分类号： H01L29/24 ,  H01L21/04

CPC分类号： H01L21/0495 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/0485 ,  H01L21/268 ,  H01L21/2683 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66143 ,  H01L29/872

摘要： Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.

摘要翻译： 公开了一种包括SiC上电接触的集成电路的生产。 一个实施例提供在SiC衬底上制造电接触，其中通过在SiC衬底上照射和吸收激光脉冲在SiC衬底的边界表面上产生导电接触。

公开(公告)号：US09209281B2

公开(公告)日：2015-12-08

申请号：US11789045

申请日：2007-04-23

申请人： Roland Rupp ,  Stefan Woehlert ,  Thomas Gutt ,  Michael Treu

发明人： Roland Rupp ,  Stefan Woehlert ,  Thomas Gutt ,  Michael Treu

IPC分类号： H01L29/66 ,  H01L21/04 ,  H01L21/3213 ,  H01L21/268 ,  H01L29/16

CPC分类号： H01L29/47 ,  H01L21/0485 ,  H01L21/0495 ,  H01L21/268 ,  H01L21/32134 ,  H01L23/528 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66901 ,  H01L29/66909 ,  H01L29/808 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more metallization layers to obtain a substrate/metallization-layer compound or a metallization-layer compound, the compound comprising an etch-selectivity toward an etching medium which is different to that of the one or more metallization layers outside the area, and removing the one or more metallization layers in the area or outside the area, depending on the etching selectivity in the area or outside the area, by etching with the etching medium to form the device.

摘要翻译： 一种制造器件的方法包括将一个或多个金属化层沉积到衬底上，局部加热所述一个或多个金属化层的区域以获得衬底/金属化层化合物或金属化层化合物，所述化合物包含蚀刻 - 选择性不同于区域外的一个或多个金属化层的蚀刻介质的选择性，以及根据该区域或区域外的蚀刻选择性，去除该区域或区域外的一个或多个金属化层， 通过用蚀刻介质蚀刻以形成该器件。

公开(公告)号：US08475326B2

公开(公告)日：2013-07-02

申请号：US13523400

申请日：2012-06-14

申请人： Oliver Noehl ,  Michael Schlosser ,  Thomas Gutt ,  Frank Feurer

发明人： Oliver Noehl ,  Michael Schlosser ,  Thomas Gutt ,  Frank Feurer

IPC分类号： F16H57/08

CPC分类号： F16D13/683

摘要： An outer plate carrier, including a cup-shaped embodied carrier plate (110) comprising a cylinder-shell shaped cylindrical section (130) and a circular-disk shaped bottom section (120). The bottom section (120) of the carrier plate (110) carries a cup-shaped hub section (140), arranged centrally. The cup-shaped hub section includes a cylindrical-shell shaped hub jacket (160) and a circular-disk shaped hub bottom (150). The hub bottom (150) has a smaller diameter than the bottom section (120) of the carrier plate (110). The hub bottom (150) is continuous and embodied in one piece with the carrier plate (110).

摘要翻译： 一个外板载体，包括一个包括一个圆柱形壳形圆柱形部分（130）和一个圆盘形底部部分（120）的杯形实施的承载板（110）。 承载板（110）的底部（120）承载中心布置的杯状毂部（140）。 杯形轮毂部分包括圆柱形壳形轮毂护套（160）和圆盘形轮毂底部（150）。 毂底部（150）的直径小于承载板（110）的底部部分（120）。 轮毂底部（150）是连续的，并与承载板（110）一体成型。

公开(公告)号：US08011319B2

公开(公告)日：2011-09-06

申请号：US12573394

申请日：2009-10-05

申请人： Hin-Yiu Chung ,  Thomas Gutt

发明人： Hin-Yiu Chung ,  Thomas Gutt

IPC分类号： B05C11/00

CPC分类号： H01L21/3247 ,  H01L21/02178 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/31666 ,  H01L21/3228 ,  H01L21/67115 ,  H01L21/68735 ,  H01S5/18311 ,  Y10S438/94

摘要： A holding device is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The process includes introducing a substrate, which bears a layer to be oxidized uncovered in an edge region in a layer stack, into a heating device, passing an oxidation gas onto the substrate, heating the substrate to a process temperature, which is recorded during the processing via a temperature of the holding device which holds the substrate, and controlling the substrate temperature to a desired temperature or temperature curve during the processing.

摘要翻译： 提出了一种保持装置，其中在单衬底工艺中处理待氧化的层。 处理期间的处理温度直接记录在基板或基板的保持装置上。 该方法包括将在衬层的边缘区域中被覆盖的未被覆盖的层的衬底引入到加热装置中，将氧化气体传递到衬底上，将衬底加热到​​处理温度，该过程温度在 通过保持基板的保持装置的温度进行处理，并且在处理期间将基板温度控制到期望的温度或温度曲线。

公开(公告)号：US20120267211A1

公开(公告)日：2012-10-25

申请号：US13523400

申请日：2012-06-14

申请人： Oliver Noehl ,  Michael Schlosser ,  Thomas Gutt ,  Frank Feurer

发明人： Oliver Noehl ,  Michael Schlosser ,  Thomas Gutt ,  Frank Feurer

IPC分类号： F16D13/58

CPC分类号： F16D13/683

摘要： An outer plate carrier, including a cup-shaped embodied carrier plate (110) comprising a cylinder-shell shaped cylindrical section (130) and a circular-disk shaped bottom section (120). The bottom section (120) of the carrier plate (110) carries a cup-shaped hub section (140), arranged centrally. The cup-shaped hub section includes a cylindrical-shell shaped hub jacket (160) and a circular-disk shaped hub bottom (150). The hub bottom (150) has a smaller diameter than the bottom section (120) of the carrier plate (110). The hub bottom (150) is continuous and embodied in one piece with the carrier plate (110).

摘要翻译： 一个外板载体，包括一个包括一个圆柱形壳形圆柱形部分（130）和一个圆盘形底部部分（120）的杯形实施的承载板（110）。 承载板（110）的底部（120）承载中心布置的杯状毂部（140）。 杯形轮毂部分包括圆柱形壳形轮毂护套（160）和圆盘形轮毂底部（150）。 毂底部（150）的直径小于承载板（110）的底部部分（120）。 轮毂底部（150）是连续的，并与承载板（110）一体成型。

公开(公告)号：US20110121458A1

公开(公告)日：2011-05-26

申请号：US12888781

申请日：2010-09-23

申请人： Dirk Siepe ,  Thomas Gutt ,  Roman Roth

发明人： Dirk Siepe ,  Thomas Gutt ,  Roman Roth

IPC分类号： H01L23/52

CPC分类号： H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/4847 ,  H01L2224/4851 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48757 ,  H01L2224/48764 ,  H01L2224/48769 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01202 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/2076 ,  H01L2924/01081 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/01015 ,  H01L2924/01007 ,  H01L2924/01006

摘要： A bonding connection between a bonding wire and a power semiconductor chip is disclosed. The power semiconductor chip has a semiconductor body arranged in which is an active cell region with a multiplicity of cells arranged one following the other in a lateral direction and connected electrically in parallel. The semiconductor body has a surface portion arranged above the active cell region in a vertical direction perpendicular to the lateral direction. Applied to the surface portion is a metallization layer onto which a bonding wire is bonded. The bonding wire comprises an alloy containing at least 99% by weight aluminium and at least one further alloying constituent. The aluminum has a grain structure with a mean grain size which is less than 2 μm.

摘要翻译： 公开了接合线和功率半导体芯片之间的接合连接。 功率半导体芯片具有半导体本体，该半导体主体是具有多个单元的活性单元区域，多个单元沿横向依次排列并联，并联电连接。 半导体本体具有在垂直于横向方向的垂直方向上布置在活性单元区域上方的表面部分。 施加到表面部分的是金属化层，其上粘合有接合线。 接合线包括含有至少99重量％的铝和至少一种另外的合金成分的合金。 铝具有平均粒径小于2μm的晶粒结构。

公开(公告)号：US20090267200A1

公开(公告)日：2009-10-29

申请号：US12110740

申请日：2008-04-28

申请人： Thomas Gutt ,  Frank Umbach ,  Hans Peter Felsl ,  Manfred Pfaffenlehner ,  Franz-Josef Niedernostheide ,  Holger Schulze

发明人： Thomas Gutt ,  Frank Umbach ,  Hans Peter Felsl ,  Manfred Pfaffenlehner ,  Franz-Josef Niedernostheide ,  Holger Schulze

IPC分类号： H01L21/265 ,  H01L29/36

CPC分类号： H01L29/7395 ,  H01L21/26513 ,  H01L21/268 ,  H01L29/0611 ,  H01L29/0615 ,  H01L29/08 ,  H01L29/66083 ,  H01L29/861

摘要： A method for manufacturing a semiconductor device by laser annealing. One embodiment provides a semiconductor substrate having a first surface and a second surface. The second surface is arranged opposite to the first surface. A first dopant is introduced into the semiconductor substrate at the second surface such that its peak doping concentration in the semiconductor substrate is located at a first depth with respect to the second surface. A second dopant is introduced into the semiconductor surface at the second surface such that its peak doping concentration in the semiconductor substrate is located at a second depth with respect to the second surface, wherein the first depth is larger than the second depth. At least a first laser anneal is performed by directing at least one laser beam pulse onto the second surface to melt the semiconductor substrate, at least in sections, at the second surface.

摘要翻译： 一种通过激光退火制造半导体器件的方法。 一个实施例提供了具有第一表面和第二表面的半导体衬底。 第二表面布置成与第一表面相对。 第一掺杂剂在第二表面被引入半导体衬底中，使得其半导体衬底中的峰值掺杂浓度位于相对于第二表面的第一深度。 第二掺杂剂在第二表面被引入到半导体表面中，使得其半导体衬底中的峰值掺杂浓度相对于第二表面位于第二深度，其中第一深度大于第二深度。 至少通过将至少一个激光束脉冲引导到第二表面上来进行至少第一激光退火，以至少在第二表面上以部分熔化半导体衬底。

公开(公告)号：US20080122091A1

公开(公告)日：2008-05-29

申请号：US11602024

申请日：2006-11-20

申请人： Thomas Gutt ,  Drik Siepe ,  Thomas Laska ,  Michael Melzl ,  Matthias Stecher ,  Roman Roth

发明人： Thomas Gutt ,  Drik Siepe ,  Thomas Laska ,  Michael Melzl ,  Matthias Stecher ,  Roman Roth

IPC分类号： H01L29/45 ,  H01L21/71 ,  H01L29/41

CPC分类号： H01L24/85 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05093 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4807 ,  H01L2224/48458 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48757 ,  H01L2224/48764 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48857 ,  H01L2224/48864 ,  H01L2224/838 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/20752 ,  H01L2924/2076 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48824 ,  H01L2224/48657 ,  H01L2924/00015

摘要： A semiconductor device exhibits a first metal layer, made of a first metal, with at least one contiguous subsection. At least one second metal layer, made of a second metal, is placed on the contiguous subsection of the first metal layer. The second metal is harder than the first metal. The second metal layer is structured to form at least two layer regions, which are disposed on the contiguous subsection of the first metal layer. The second metal exhibits a boron-containing or phosphorus-containing metal or a boron-containing or phosphorus-containing metal alloy.

摘要翻译： 半导体器件具有由第一金属制成的具有至少一个连续部分的第一金属层。 由第二金属制成的至少一个第二金属层被放置在第一金属层的相邻子部分上。 第二种金属比第一种金属更硬。 第二金属层被构造成形成至少两个层区，它们设置在第一金属层的相邻子部分上。 第二金属表现出含硼或含磷金属或含硼或含磷金属合金。