Power amplifier with large output power

    公开(公告)号:US12113496B2

    公开(公告)日:2024-10-08

    申请号:US17621781

    申请日:2019-06-24

    Inventor: Mingquan Bao

    CPC classification number: H03F3/607 H03F1/18 H03F1/565 H03F3/245 H03F2200/423

    Abstract: A power amplifier has a number n of power cells Ai, a number n of output transmission lines TL1i for combining output powers from the power cells, and a number n of impedance transformation network ITNi, where i=1, . . . n. The number n of output transmission lines are connected in series. The output terminal of each power cells is connected to its output transmission line via its impedance transformation network. Each impedance transformation network is an upward impedance transformation network for transforming an output impedance of each power cell at the input terminal of the impedance transformation network into a higher impedance at the output terminal of the impedance transformation network. A number n of input transmission lines TL0i (i=1, 2 . . . n)=connected in series. The input terminal of the i-th power cell is connected to the second terminal of the i-th transmission line via a capacitor, where i=1, . . . n.

    Semiconductor power amplifier and multistage monolithic integrated circuit
    7.
    发明授权
    Semiconductor power amplifier and multistage monolithic integrated circuit 失效
    半导体功率放大器和多级单片集成电路

    公开(公告)号:US06768381B2

    公开(公告)日:2004-07-27

    申请号:US09817216

    申请日:2001-03-27

    CPC classification number: H03F3/602 H03F1/18 H03F3/211

    Abstract: There are disclosed a semiconductor power amplifier and a microwave monolithic integrated circuit which can be reduced in size and cost and which can sufficiently inhibit loop oscillation. The semiconductor power amplifier of the present invention comprises first and second transistors connected in parallel, a capacitor element connected between a signal input terminal and a base terminal of the first transistor, a capacitor element connected between the signal input terminal and a base terminal of the second transistor, and a resistance element connected between the respective base terminals of the first and second transistors. Since the capacitor element and resistance element are disposed, a loop oscillation signal can sufficiently be attenuated on a loop oscillation path. Moreover, in the present embodiment, since miniaturization is possible, MMIC can easily be constituted.

    Abstract translation: 公开了半导体功率放大器和微波单片集成电路,其可以减小尺寸和成本,并且可以充分地抑制环路振荡。 本发明的半导体功率放大器包括并联连接的第一和第二晶体管,连接在第一晶体管的信号输入端子和基极端子之间的电容器元件,连接在信号输入端子与基极端子之间的电容器元件 第二晶体管和连接在第一和第二晶体管的各个基极之间的电阻元件。 由于设置了电容器元件和电阻元件,所以环路振荡信号可以在环路振荡路径上充分衰减。 此外,在本实施例中,由于可以小型化,因此可以容易地构成MMIC。

    Microwave power amplifier
    8.
    发明授权
    Microwave power amplifier 有权
    微波功率放大器

    公开(公告)号:US06762653B2

    公开(公告)日:2004-07-13

    申请号:US10228893

    申请日:2002-08-27

    CPC classification number: H01P5/12 H03F1/18 H03F3/195 H03F3/602

    Abstract: An amplifier is provided having an electrically conductive structure. The structure has a waveguide network disposed in an inner region thereof. The network has an input section and an output section. The conductive structure has an amplifier input port and amplifier output port formed in outer wall portions of such structure. The network also includes a plurality of amplifier module input ports disposed in an outer surface of the structure. The amplifier input ports are coupled to the amplifier port through the input section of the network. The network further includes a plurality of amplifier module output ports disposed in said outer surface of the structure. The amplifier module output ports are coupled to the amplifier output port through the output section of the network. Each one of the amplifier module output ports is associated with one of the plurality of amplifier module input ports. The amplifier includes a plurality of amplifier modules. Each one of the amplifier modules has an input and an output. The input each amplifier module is coupled to a corresponding one of the amplifier input ports and the output of such module is coupled to the amplifier output port of the one of the amplifier output ports associated with such one of the amplifier input ports.

    Abstract translation: 提供具有导电结构的放大器。 该结构具有布置在其内部区域中的波导网络。 网络有一个输入部分和一个输出部分。 导电结构具有形成在这种结构的外壁部分的放大器输入端口和放大器输出端口。 网络还包括设置在结构的外表面中的多个放大器模块输入端口。 放大器输入端口通过网络的输入部分耦合到放大器端口。 网络还包括设置在结构的所述外表面中的多个放大器模块输出端口。 放大器模块输出端口通过网络的输出部分耦合到放大器输出端口。 每个放大器模块输出端口与多个放大器模块输入端口中的一个相关联。 放大器包括多个放大器模块。 每个放大器模块都有一个输入和一个输出。 输入每个放大器模块耦合到相应的一个放大器输入端口,并且这种模块的输出端耦合到与放大器输入端口之一相关的放大器输出端口之一的放大器输出端口。

    Distributed level-shifting network for cascading broadband amplifiers
    9.
    发明申请
    Distributed level-shifting network for cascading broadband amplifiers 有权
    用于级联宽带放大器的分布式电平转换网络

    公开(公告)号:US20040027202A1

    公开(公告)日:2004-02-12

    申请号:US10351602

    申请日:2003-01-24

    Abstract: A distributed and adjustable level-shifiting netwrok is intergrated with cascaded amplifiers, eliminating the need for a direct current (dc) blocking capacitor between the amplifiers. The level-shifting network can be adjucted to compensate for process variations and to balcane the crossover firequency response of the cascaded amplifiers.

    Abstract translation: 分布式和可调节的电平移位网络与级联放大器集成,消除了在放大器之间需要直流(DC)阻塞电容器。 电平移动网络可以被排除以补偿过程变化并且平衡级联放大器的交叉响应。

    Broadband distributed amplifier for microwave frequences
    10.
    发明授权
    Broadband distributed amplifier for microwave frequences 失效
    用于微波频率的宽带分布式放大器

    公开(公告)号:US4754234A

    公开(公告)日:1988-06-28

    申请号:US18563

    申请日:1987-02-25

    Applicant: Patrice Gamand

    Inventor: Patrice Gamand

    CPC classification number: H03F1/18 H03F3/607

    Abstract: A broadband distributed amplifier comprised of a plurality of field effect transistors whose gates are connected to junctions between serially-connected inductors forming a gate transmission line, whose drains are connected to junctions between serially-connected inductors forming a drain transmission line, and whose sources are connected to ground. The distribution of the amplifier stages along the gate and drain transmission lines is effected such that these transmission lines are periodically loaded by their own impedances and by the transistor gate and drain capacitances, thus forming artificial lines, and such that a microwave frequency input signal applied to the input of the gate transmission line effects the production of an amplified microwave frequency output signal at the output of the drain transmission line. The gate and drain transmission line output and input, respectively, are terminated by loads. The drain transmission line input only includes biasing means, whereas the gate transmission line output includes means for compensating for the characteristic impedance variations of the artificial line as a function of the frequency.

    Abstract translation: 一种宽带分布放大器,包括多个场效应晶体管,其栅极连接到形成栅极传输线的串联电感器之间的结,其漏极连接到形成漏极传输线的串联连接的电感器之间的接点,源极为 连接到地面。 沿着栅极和漏极传输线的放大器级的分布是这样实现的,使得这些传输线由它们自己的阻抗和晶体管栅极和漏极电容周期性地加载,从而形成人造线,并且使得施加的微波频率输入信号 对于栅极传输线的输入,在漏极传输线的输出处产生放大的微波频率输出信号。 栅极和漏极传输线输出和输入分别由负载终止。 漏极传输线输入仅包括偏置装置,而栅极传输线输出包括用于补偿作为频率的函数的人造线的特性阻抗变化的装置。

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