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公开(公告)号:US20240189012A1
公开(公告)日:2024-06-13
申请号:US18223924
申请日:2023-07-19
Applicant: Thomas J. SHEPERAK
Inventor: Thomas J. SHEPERAK
CPC classification number: A61B18/042 , A61L2/007 , A61N1/44 , A61N5/10 , G21K1/093 , H05H1/46 , H05H1/4645 , A61N2005/1089 , H05H1/466 , H05H2240/20 , H05H2242/26 , H05H2245/34
Abstract: A method of generating an output gas, comprising plasmatizing an input gas with RF power propagating from a tip of an electrode to form an annular plasma sheath constrained by a tube with said RF power propagating within said annular plasma sheath; and forming said output gas as said annular plasma sheath propagates away from said tip of said electrode.
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公开(公告)号:US11706866B2
公开(公告)日:2023-07-18
申请号:US17318852
申请日:2021-05-12
Applicant: Atmospheric Plasma Solutions, Inc.
Inventor: Peter J. Yancey , Terrence E. Rogers
CPC classification number: H05H1/30 , H01F27/24 , H01F27/2876 , H01F27/325 , H01F38/10 , H05B41/16 , H05H2242/26
Abstract: A ballast transformer and system using the ballast transformer to couple power to a plasma load. The ballast transformer has a magnetic core, a first primary winding on a primary side of the magnetic core, a secondary winding on a secondary side of the magnetic core, and a second primary winding connected in series with the first primary winding and wound in proximity to the secondary winding on the secondary side of the magnetic core. The first primary winding is connectable to the AC power source, and the secondary winding is connectable to the plasma load via a coaxial cable.
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公开(公告)号:US20230220552A1
公开(公告)日:2023-07-13
申请号:US18185596
申请日:2023-03-17
Applicant: KOKUSAI ELECTRIC CORPORATION
Inventor: Tsuyoshi TAKEDA
IPC: C23C16/505 , H01L21/67 , H05H1/46
CPC classification number: C23C16/505 , H01L21/67017 , H01L21/67242 , H05H1/46 , H05H2242/26
Abstract: There is provided a technique that includes: high-frequency power sources supplying power to plasma generators; and matchers installed between the high-frequency power sources and the plasma generators and matching load impedances of the plasma generators with output impedances of the high-frequency power sources, wherein at least one of the high-frequency power sources includes: a high-frequency oscillator; a directional coupler at a subsequent stage of the high-frequency oscillator, which extracts a part of a traveling wave component from the high-frequency oscillator and a part of a reflected wave component from the matcher; a filter removing a noise signal in the reflected wave component extracted by the directional coupler; and a power monitor measuring the reflected wave component after passing through the filter and the traveling wave component extracted by the directional coupler and feedback-controlling the matcher to reduce a ratio between the reflected wave component and the traveling wave component.
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公开(公告)号:US20230354500A1
公开(公告)日:2023-11-02
申请号:US18217574
申请日:2023-07-02
Applicant: Atmospheric Plasma Solutions, Inc.
Inventor: Peter J. Yancey , Terrence E. Rogers
CPC classification number: H05H1/30 , H01F27/24 , H01F27/2876 , H01F27/325 , H01F38/10 , H05B41/16 , H05H2242/26
Abstract: A ballast transformer and system using the ballast transformer to couple power to a plasma load. The ballast transformer has a magnetic core, a first primary winding on a primary side of the magnetic core, a secondary winding on a secondary side of the magnetic core, and a second primary winding connected in series with the first primary winding and wound in proximity to the secondary winding on the secondary side of the magnetic core. The first primary winding is connectable to the AC power source, and the secondary winding is connectable to the plasma load via a coaxial cable.
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公开(公告)号:US11798784B2
公开(公告)日:2023-10-24
申请号:US16024602
申请日:2018-06-29
Applicant: Lam Research Corporation
Inventor: John C. Valcore, Jr. , Bradford J. Lyndaker
CPC classification number: H01J37/32091 , B44C1/22 , H01J37/32165 , H01J37/32935 , H03L5/00 , H05H2242/26
Abstract: Methods and apparatus for processing a substrate in a multi-frequency plasma processing chamber are disclosed. The base RF signal pulses between a high power level and a low power level. Each of the non-base RF generators, responsive to a control signal, proactively switches between a first predefined power level and a second predefined power level as the base RF signal pulses. Alternatively or additionally, each of the non-base RF generators, responsive to a control signal, proactively switches between a first predefined RF frequency and a second predefined RF frequency as the base RF signal pulses. Techniques are disclosed for ascertaining in advance of production time the first and second predefined power levels and/or the first and second predefined RF frequencies for the non-base RF signals.
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公开(公告)号:US20230283249A1
公开(公告)日:2023-09-07
申请号:US18111767
申请日:2023-02-20
Inventor: Juan Rivas-Davila , Jiale Xu , Kawin Surakitbovorn , Benjamin Wang , Mark A. Cappelli
CPC classification number: H03F3/2176 , H05H1/2406 , H05H2242/24 , H03F2200/451 , H05H2242/26 , H03F1/56
Abstract: In certain examples, methods and semiconductor structures are directed to a switching (power) amplification circuit, including resonance circuitry to resonate at a frequency associated with at least one of a plurality of different selectable resonance frequencies. The switching amplification circuit is configured to deliver power to one or multiple loads while the switching amplifier circuit is operating based on one or more of the selectable resonance frequencies.
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公开(公告)号:US11972927B2
公开(公告)日:2024-04-30
申请号:US17973969
申请日:2022-10-26
Applicant: Advanced Energy Industries, Inc.
Inventor: Gideon Van Zyl
CPC classification number: H01J37/32183 , H01J37/32128 , H01J37/32165 , H03H7/0138 , H03H7/38 , H05H1/46 , H01J2237/24585 , H05H2242/26
Abstract: Plasma processing systems and methods are disclosed. The plasma processing system includes a high-frequency generator configured to deliver power to a plasma chamber and a low-frequency generator configured to deliver power to the plasma chamber. A filter is coupled between the plasma chamber and the high-frequency generator, and the filter suppresses mixing products of high frequencies produced by the high-frequency generator and low frequencies produced by the low-frequency generator.
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公开(公告)号:US20240021408A1
公开(公告)日:2024-01-18
申请号:US18475006
申请日:2023-09-26
Applicant: Lam Research Corporation
Inventor: John C. Valcore, JR. , Bradford J. Lyndaker
CPC classification number: H01J37/32091 , H01J37/32165 , H01J37/32935 , B44C1/22 , H03L5/00 , H05H2242/26
Abstract: Methods and apparatus for processing a substrate in a multi-frequency plasma processing chamber are disclosed. The base RF signal pulses between a high power level and a low power level. Each of the non-base RF generators, responsive to a control signal, proactively switches between a first predefined power level and a second predefined power level as the base RF signal pulses. Alternatively or additionally, each of the non-base RF generators, responsive to a control signal, proactively switches between a first predefined RF frequency and a second predefined RF frequency as the base RF signal pulses. Techniques are disclosed for ascertaining in advance of production time the first and second predefined power levels and/or the first and second predefined RF frequencies for the non-base RF signals.
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公开(公告)号:US11793103B2
公开(公告)日:2023-10-24
申请号:US16571244
申请日:2019-09-16
Applicant: Applied Quantum Engeries, LLC
Inventor: Benjamin Wolfe , George Paskalov , Rick Jarvis , Jerzy P. Puchacz
CPC classification number: A01C1/08 , A01C1/00 , A61L2/14 , H01J37/32 , H05H1/46 , A23B9/02 , A23B9/025 , A23B9/18 , A61L2202/16 , H05H1/466 , H05H2242/26
Abstract: Methods and apparatuses to activate, modify, and sanitize the surfaces of granular, powdered, or seed material placed in a continuous flow of a low-temperature, reduced-pressure gas plasma. Said plasma may be created with radio-frequency power, using capacitive-inductive, or a combination of both types of discharge. The plasma is generated at pressures in the 0.01 to 10 Torr range. RF frequency ranges from 0.2 to 220 MHz, and correspond to a plasma density between about ne×108-ne×1012 or 0.001 to 0.4 W/cm3. Inserts and electrodes may be temperature controlled to control process conditions. RF discharge may be pulsed or modulated by different frequency in order to stimulate energy exchange between gas plasma and process material. The apparatuses may be grounded, biased and mechanically activated (e.g., vibration, rotation, etc.).
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10.
公开(公告)号:US11749502B2
公开(公告)日:2023-09-05
申请号:US17095278
申请日:2020-11-11
CPC classification number: H01J37/32155 , H01J37/32183 , H05H1/46 , H05H2242/26
Abstract: A pulse modulation system of a radio frequency (RF) power supply includes a modulation output circuit and a frequency adjustment circuit. The modulation output circuit is configured to modulate an output signal of the RF power supply and output a pulse modulation RF signal. Each pulse cycle of the pulse modulation RF signal includes a pulse-on phase and a pulse-off phase. An overshoot sub-phase is set in an initial preset time of the pulse-on phase. The frequency adjustment circuit is electrically connected to the modulation output circuit. The frequency adjustment circuit is configured to adjust an RF frequency of the pulse modulation RF signal of the overshoot sub-phase to cause a reflected power of the overshoot sub-phase to satisfy a preset reflected power or a reflected coefficient to satisfy a preset reflected coefficient.
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