公开(公告)号：US11913133B2

公开(公告)日：2024-02-27

申请号：US17858776

申请日：2022-07-06

申请人： Lintech Corporation

发明人： Ho Jung You ,  Dong Nam Shin ,  Sei Kwang Oh ,  Jun Seok Lee ,  Sun Bin Yum ,  Tae-Woo Kang

IPC分类号： C30B15/10 ,  C30B11/00 ,  C30B15/34 ,  C30B17/00 ,  C30B29/06

CPC分类号： C30B11/002 ,  C30B15/10 ,  C30B15/34 ,  C30B17/00 ,  C30B29/06

摘要： The present invention relates to a method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods, the method including the steps of: manufacturing the single crystal or polycrystalline silicon rods each having the shape of a quadrilateral pillar; putting the single crystal or polycrystalline quadrilateral pillar-shaped silicon rods into the crucible in such a manner as to be arranged close to one another along the inner peripheral surface of the crucible to thus form a space portion inside the single crystal or polycrystalline silicon rods, into which silicon chunks are put, and the oxygen exhaust passages between the inner peripheral surface of the crucible and the respective surfaces of the single crystal or polycrystalline silicon rods oriented toward the inner peripheral surface of the crucible; putting the silicon chunks into the space portion of the crucible; and melting and crystallizing the silicon chunks.

公开(公告)号：US20230133632A1

公开(公告)日：2023-05-04

申请号：US17970180

申请日：2022-10-20

申请人： Comadur SA

发明人： Didier COCHET-MUCHY ,  Naser BERISHA ,  Pierry VUILLE

IPC分类号： C30B29/20 ,  C30B15/34 ,  C30B17/00 ,  C01F7/02 ,  G04B39/00

摘要： A method for manufacturing a sapphire single-crystal, including melting alumina and/or sapphire in a crucible, and bringing the molten alumina and/or sapphire in contact with a monocrystalline sapphire seed to make the molten alumina and/or sapphire crystallise progressively according to a growth direction to form the sapphire single-crystal. The monocrystalline sapphire seed has a rhombohedral crystallographic structure defining three crystallographic axes [A], [C] and [M] perpendicular to each other and respectively perpendicular to the crystallographic planes. The monocrystalline sapphire seed is a plate delimited by two planar faces which extend parallel to and at a distance from each other, is obtained from an initial sapphire single-crystal which is cut so that one of the crystallographic axes of the monocrystalline sapphire plate forms with a normal to the planar faces of the monocrystalline sapphire plate an angle whose value is comprised between 5 and 85°.

公开(公告)号：US20190106811A1

公开(公告)日：2019-04-11

申请号：US15864000

申请日：2018-01-08

申请人： GlobalWafers Co., Ltd.

发明人： Ching-Shan Lin ,  Jian-Hsin Lu ,  Chien-Cheng Liou ,  I-Ching Li

IPC分类号： C30B29/36 ,  C30B17/00 ,  C01B32/956

摘要： A silicon carbide crystal and a manufacturing method for same are provided. A silicon carbide crystal seed used for the silicon carbide crystal has a crystal-growing surface with a surface roughness (Ra) less than 2.0 nm, and a thickness of the silicon carbide crystal seed is less than 700 μm. Therefore, the silicon carbide crystal grown from the silicon carbide crystal seed by sublimation method (which is also a PVT method) may have low basal plane dislocation (BPD) and low micropipe density (MPD).

公开(公告)号：US10133148B2

公开(公告)日：2018-11-20

申请号：US15563903

申请日：2016-04-13

申请人： University of Houston System

发明人： P. Shiv Halasyamani ,  Hongwei Yu

IPC分类号： G02F1/355 ,  C30B1/00 ,  C30B17/00 ,  C30B29/10 ,  G02F1/35 ,  G02F1/37 ,  H01S5/00

摘要： Disclosed is a nonlinear optical material (NLO) for use in deep-UV applications, and methods of fabrication thereof. The NLO is fabricated from a plurality of components according to the formula AqByCz and a crystallographic non-centrosymmetric (NCS) structure. The NLO material may be fabricated as a polycrystalline or a single crystal material. In an embodiment, the material may be according to a formula Ba3ZnB5PO14.

公开(公告)号：US09945047B2

公开(公告)日：2018-04-17

申请号：US14559299

申请日：2014-12-03

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Naofumi Shinya ,  Yu Hamaguchi ,  Norio Yamagata ,  Takehisa Minowa

IPC分类号： C30B13/02 ,  C30B19/02 ,  C30B17/00 ,  C30B29/36 ,  C30B13/14 ,  C30B15/02 ,  C30B15/20 ,  C30B11/08 ,  C30B15/10 ,  C30B19/04 ,  C30B9/10

CPC分类号： C30B13/02 ,  C30B9/10 ,  C30B11/08 ,  C30B13/14 ,  C30B15/02 ,  C30B15/10 ,  C30B15/206 ,  C30B17/00 ,  C30B19/04 ,  C30B29/36

摘要： In the present invention, a crucible formed of SiC as a main component is used as a container for a Si—C solution. The SiC crucible is heated such that, for example, an isothermal line representing a temperature distribution within the crucible draws an inverted convex shape; and Si and C, which are derived from a main component SiC of the crucible, are eluted from a high-temperature surface region of the crucible in contact with the Si—C solution, into the Si—C solution, thereby suppressing precipitation of a SiC polycrystal on a surface of the crucible in contact with the Si—C solution. To the Si—C solution of this state, a SiC seed crystal is moved down from the upper portion of the crucible closer to the Si—C solution and brought into contact with the Si—C solution to grow a SiC single crystal on the SiC seed crystal.

公开(公告)号：US09856582B2

公开(公告)日：2018-01-02

申请号：US13428395

申请日：2012-03-23

申请人： Mina Ryo ,  Yoshiyuki Yonezawa ,  Takeshi Suzuki

发明人： Mina Ryo ,  Yoshiyuki Yonezawa ,  Takeshi Suzuki

IPC分类号： C30B17/00 ,  C30B29/36 ,  C30B9/10

CPC分类号： C30B29/36 ,  C30B9/10 ,  C30B17/00

摘要： A method is disclosed with provides stable growth of SiC single crystals, particularly 4H—SiC single crystals, with an effective crystal growth rate for a prolonged time even at a low temperature range of 2000° C. or lower. A raw material containing Si, Ti and Ni is charged into a crucible made of graphite and heat-melted to obtain a solvent. At the same time, C is dissolved out from the crucible into the solvent to obtain a melt. A SiC seed crystal substrate is then brought into contact with the melt such that SiC is supersaturated in the melt in the vicinity of the surface of the SiC seed crystal substrate, thereby allowing growth and production of an SiC single crystal on the SiC seed crystal substrate.

公开(公告)号：US09702057B2

公开(公告)日：2017-07-11

申请号：US14650664

申请日：2013-04-01

申请人： Takayuki Shirai

发明人： Takayuki Shirai

IPC分类号： C30B19/04 ,  C30B19/06 ,  C30B29/36 ,  C30B17/00 ,  C30B19/08 ,  C30B19/10 ,  C30B19/12

CPC分类号： C30B19/062 ,  C30B17/00 ,  C30B19/04 ,  C30B19/067 ,  C30B19/068 ,  C30B19/08 ,  C30B19/106 ,  C30B19/12 ,  C30B29/36

摘要： Provided is a method for producing an n-type SiC single crystal, whereby it is possible to grow an n-type SiC single crystal having a low resistivity at a high speed. A method for producing an n-type SiC single crystal by bringing a SiC seed crystal substrate into contact with a Si—C solution having such a temperature gradient that the temperature gradually decreases from the inside toward the surface, thereby achieving the crystal growth of the n-type SiC single crystal. The method involves adding a nitride to a raw material for forming the Si—C solution or to the Si—C solution.

公开(公告)号：US20160305041A1

公开(公告)日：2016-10-20

申请号：US15034843

申请日：2014-05-28

申请人： (XINJIANG TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY, CHINESE ACADEMY OF SCIENCES

发明人： Shilie PAN ,  Hui ZHANG ,  Min ZHANG

IPC分类号： C30B29/22 ,  C30B15/14 ,  C30B15/30 ,  C30B15/22 ,  C30B17/00 ,  G02B27/28 ,  C30B19/06 ,  C30B19/08 ,  C30B19/10 ,  C01B35/06 ,  G02B1/08 ,  G02B5/30 ,  C30B15/10 ,  C30B19/02

CPC分类号： C30B29/22 ,  C01B35/066 ,  C30B15/10 ,  C30B15/14 ,  C30B15/22 ,  C30B15/30 ,  C30B17/00 ,  C30B19/02 ,  C30B19/062 ,  C30B19/067 ,  C30B19/08 ,  C30B19/10 ,  C30B29/12 ,  G02B1/08 ,  G02B5/30 ,  G02B27/283

摘要： A preparation method and application of a Na3Ba2(B3O6)2F birefringent crystal, the crystal having a chemical formula of Na3Ba2(B3O6)2F, and belonging to a hexagonal crystal system, the space group being P63/m, and the lattice parameters comprising a=7.3490(6) Å, c=12.6340(2) Å, V=590.93(12) Å3, Z=2; the crystal is used for an infrared/deep ultraviolet waveband, and is an uniaxial negative crystal, ne

摘要翻译： Na3Ba2（B3O6）2F双折射晶体的制备方法和应用，其具有化学式为Na 3 B 2a（B3O 6）2 F的晶体，属于六方晶系，空间群为P63 / m，晶格参数包括 = 7.3490（6）Å，c = 12.6340（2）Å，V = 590.93（12）Å3，Z = 2; 该晶体用于红外/深紫外波段，并且是单轴负晶体，ne

公开(公告)号：US09360610B2

公开(公告)日：2016-06-07

申请号：US14128370

申请日：2012-02-17

申请人： Rukang Li ,  Yingying Ma

发明人： Rukang Li ,  Yingying Ma

IPC分类号： C30B9/12 ,  G02B5/30 ,  C30B29/22 ,  G02B1/02 ,  C30B11/06 ,  C30B11/02 ,  C30B15/20 ,  C30B17/00

CPC分类号： G02B5/3091 ,  C30B9/12 ,  C30B11/006 ,  C30B11/02 ,  C30B11/06 ,  C30B15/20 ,  C30B17/00 ,  C30B29/22 ,  G02B1/02 ,  G02B5/3083

摘要： The present invention relates to a borate birefringent crystal applicable to ultraviolet (UV) or deep ultraviolet (DUV) range, with chemical formula of Ba2Mg(B3O6)2. The borate birefringent crystal belongs to a trigonal system, with space group of R-3 wherein a=0.70528(3) nm, c=1.65520(9) nm and Z=12. The barium magnesium borate birefringent crystal is negative uniaxial (ne

摘要翻译： 本发明涉及适用于化学式为Ba2Mg（B3O6）2的紫外线（UV）或深紫外（DUV）范围的硼酸盐双折射晶体。 硼酸盐双折射晶体属于三角系统，空间群为R-3，其中a = 0.70528（3）nm，c = 1.65520（9）nm，Z = 12。 硼酸镁硼酸盐双折射晶体是双折射为0.077-0.229，透射范围为177-3000nm的负单轴（ne

公开(公告)号：US20160122900A1

公开(公告)日：2016-05-05

申请号：US14889463

申请日：2014-05-19

申请人： NIPPON STEEL & SUMITOMO METAL CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Kazuhito KAMEI ,  Kazuhiko KUSUNOKI ,  Motohisa KADO ,  Hironori DAIKOKU ,  Hidemitsu SAKAMOTO

IPC分类号： C30B17/00 ,  C30B29/36

CPC分类号： C30B17/00 ,  C30B15/00 ,  C30B29/36

摘要： An apparatus for producing SiC single crystals where the quality of the SiC single crystals is improved, and a production method using such an apparatus are provided. The apparatus for producing SiC single crystals according to an embodiment of the present invention is employed to produce an SiC single crystal by the solution growth method. The production apparatus includes a crucible and a support shaft. The crucible accommodates an Si—C solution. The support shaft supports the crucible. The support shaft includes a heat removing portion for removing heat from a bottom portion of the crucible. The heat removing portion includes one of (a) a contact portion having a thermal conductivity not less than that of the bottom portion and contacting at least a portion of the bottom portion and (b) a space adjacent to at least a portion of the contact portion or the bottom portion.

摘要翻译： 提供了改善SiC单晶质量的SiC单晶的制造装置以及使用这种装置的制造方法。 采用本发明实施方式的SiC单晶的制造装置，通过溶液生长法制造SiC单晶。 制造装置包括坩埚和支撑轴。 坩埚容纳Si-C溶液。 支撑轴支撑坩埚。 支撑轴包括用于从坩埚的底部除去热量的除热部分。 除热部分包括（a）具有不小于底部部分的热导率并且接触底部的至少一部分的接触部分的接触部分和（b）与接触部分的至少一部分相邻的空间 部分或底部。