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1.发明公开公开(公告)号：US20240036456A1
公开(公告)日：2024-02-01
申请号：US18226901
申请日：2023-07-27
申请人： Carl Zeiss SMT GmbH
发明人： Gilles Tabbone
CPC分类号： G03F1/20 , H01J37/222 , H01J37/28 , H01J37/30 , G03F7/7065 , G03F7/70655 , G03F7/706837 , G03F7/706839 , H01J2237/04735 , H01J2237/24585
摘要： A method for electron beam-induced processing of a defect of a microlithographic photomask, including the steps of:
a) providing an activating electron beam at a first acceleration voltage (EHT1) and a process gas in the region of a defect of the photomask for the purpose of repairing the defect, and
b) producing at least one image of the photomask, in which the region of the defect is captured at least in part, by providing an electron beam at at least one second acceleration voltage (e.g., EHT2, EHT3, EHT4) which differs from the first acceleration voltage (EHT1), for the purpose of determining a quality of the repaired defect.-
公开(公告)号：US11803683B2
公开(公告)日：2023-10-31
申请号：US17342295
申请日：2021-06-08
发明人： Yao-Jen Yang , Meng-Sheng Chang
IPC分类号： G06F30/00 , G06F30/392 , H01L27/02 , H01L27/12 , H01L27/118 , G06F30/398 , G03F1/20
CPC分类号： G06F30/392 , G06F30/398 , H01L27/0207 , H01L27/11807 , H01L27/1222 , G03F1/20 , H01L2027/11874
摘要： A method includes receiving a design rule deck including a predetermined set of widths and spacings associated with active regions. The method also includes providing a cell library including cells having respective active regions, wherein widths and spacings of the active regions are selected from the predetermined set of the design rule deck. The method includes placing a first cell and a second cell from the cell library in a design layout. The first cell has a cell height in a first direction, and a first active region having a first width in the first direction. The second cell has the cell height, and a second active region having a second width in the first direction. The second width is different from the first width. The method further includes manufacturing a semiconductor device according to the design layout.
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公开(公告)号：US20220350239A1
公开(公告)日：2022-11-03
申请号：US17712905
申请日：2022-04-04
摘要： Method (and apparatus) for producing a 3D target structure in lithographic material. Focus region of a laser writing beam travels through a scanning manifold through the lithographic material. In the focus region of the laser writing beam, an exposure dose is irradiated into the lithographic material, and a structure region is locally defined. At least one exposure data set which represents a local exposure dose for the scan manifold as a function of location is determined. A structure which approximates the target structure is defined based on at least one exposure data set. This structure is analyzed and at least one analysis data set which represents the analyzed structure is determined. Deviation data set which represents deviations of the already defined structure from the target structure is determined. At least one correction exposure data set is determined. Correction structure based on the at least one correction exposure data set is defined.
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公开(公告)号：US20210133293A1
公开(公告)日：2021-05-06
申请号：US16669808
申请日：2019-10-31
发明人： Ahmed Hassan , James Culp
IPC分类号： G06F17/50 , H01L23/538 , H01J37/317 , G03F1/20 , G03F1/70 , G01N21/95
摘要： One illustrative system includes a processor and memory storing instructions that, when executed by the processor, cause the system to receive a device layout including a curvilinear feature, define a plurality of vertices for the curvilinear feature, determine a radius of curvature between a selected vertex in the plurality of vertices and a neighboring vertex in the plurality of vertices, and identify a design rule violation for the curvilinear feature responsive to the radius of curvature being less than a predetermined threshold.
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公开(公告)号：US20200089099A1
公开(公告)日：2020-03-19
申请号：US16694348
申请日：2019-11-25
发明人： You-Hua CHOU , Kuo-Sheng CHUANG
摘要： A photomask includes a patterned photomask plate and a supporting member. The patterned photomask plate has a pattern region and a peripheral region surrounding the pattern region. The patterned photomask plate includes a plurality of openings in the pattern region. The supporting member directly abuts the patterned photomask plate and is in a peripheral region of the patterned photomask plate. The supporting member is formed from a different material than the patterned photomask plate.
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公开(公告)号：US10534214B2
公开(公告)日：2020-01-14
申请号：US15848572
申请日：2017-12-20
发明人： Wei Chen
IPC分类号： G02F1/1335 , G03F1/20 , G02F1/1362
摘要： A display panel and a mask for a manufacturing process of a display panel are provided. The display panel includes scan lines and data lines; the numerous data lines and the numerous scan lines are disposed to be intersected to form multiple pixel regions; each of the pixel regions is disposed with a pixel structure correspondingly. The pixel structure includes a pixel. Edges of the pixel at least include an arc section.
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7.发明授权公开(公告)号：US10207469B2
公开(公告)日：2019-02-19
申请号：US15534312
申请日：2015-12-08
IPC分类号： B82Y30/00 , B29D11/00 , G03F1/20 , H01J37/302 , H01J37/317 , H01L21/027
摘要： Nanopantography is a method for patterning nanofeatures over large areas. Transfer of patterns defined by nanopantography using highly selective plasma etching, with an oxide layer of silicon serving as a hard mask, can improve patterning speed and etch profile. With this method, high aspect ratio features can be fabricated in a substrate with no mask undercut. The ability to fabricate complex patterns using nanopantography, followed by highly selective plasma etching, provides improved patterning speed, feature aspect ratio, and etching profile.
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8.发明授权公开(公告)号：US10101648B2
公开(公告)日：2018-10-16
申请号：US15654941
申请日：2017-07-20
申请人： D2S, Inc.
发明人： Akira Fujimura
IPC分类号： G03F1/20 , G03F1/70 , G06F17/50 , H01J37/317 , H01J37/302
摘要： A method and system for fracturing or mask data preparation is disclosed in which a desired substrate pattern for a substrate is input. A plurality of charged particle beam shots is then determined which will form a reticle pattern on a reticle, where the reticle pattern will produce a substrate pattern on the substrate using an optical lithography process, wherein the substrate pattern is within a predetermined tolerance of the desired substrate pattern. A similar method and a similar system for forming a pattern on a reticle are also disclosed.
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公开(公告)号：US10022748B2
公开(公告)日：2018-07-17
申请号：US14793848
申请日：2015-07-08
摘要： According to one embodiment, a stencil mask includes a first opening and a second opening, the first opening is provided corresponding to a mark region in a template, the second opening is provided adjacent to the first opening, and the diameter of a circle circumscribing the second opening is smaller than the diameter of a circle circumscribing the first opening.
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公开(公告)号：US09989860B2
公开(公告)日：2018-06-05
申请号：US15255925
申请日：2016-09-02
发明人： Sang-Hee Lee , Hyun-Seok Uhm , Il-Yong Jang
摘要： A pattern generating method includes, generating a first bit map from inputted pattern data. Characteristics of a plurality of beams for exposing a pattern on a substrate are analyzed, each of the plurality of beams being designated to correspond to one of a plurality of grids in the first bit map. The pattern data is corrected such that at least one of the plurality of beams is designated to expose at least a portion of the pattern on the substrate. A second bit map is generated from the corrected pattern data. The substrate is patterned using the plurality of beams according to the designation of the second bit map.
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