Hybrid Photovoltaic Device Having Rigid Planar Segments and Flexible Non-Planar Segments

    公开(公告)号:US20240304740A1

    公开(公告)日:2024-09-12

    申请号:US18664329

    申请日:2024-05-15

    申请人: SOLARPAINT LTD.

    摘要: A hybrid photovoltaic (PV) device includes: a rigid PV segment, having one or more PV cells that convert light to electricity, wherein the rigid PV segment is non-foldable and non-bendable; and a co-located flexible PV segment, wherein the flexible PV segment is foldable or bendable without being damaged; electric connectors, that connect between (i) electric current or voltage generated by the rigid PV segment, and (ii) electric current or voltage generated by the flexible PV segment; a unified encapsulation layer, encapsulating together both the rigid PV segment and the co-located flexible PV segment. The rigid PV segment, the co-located flexible PV segment, the electric connectors, and the unified encapsulation layer, form together the hybrid PV device as a single stand-alone PV device that converts light to electricity, and has at least one rigid region corresponding to the rigid PV segment and at least one flexible region corresponding to the co-located flexible PV segment.

    Flexible Photovoltaic Cell, and Methods and Systems of Producing It

    公开(公告)号:US20240282874A1

    公开(公告)日:2024-08-22

    申请号:US18635039

    申请日:2024-04-15

    申请人: SOLARPAINT LTD.

    摘要: A flexible photovoltaic (PV) cell having enhanced properties of mechanical impact absorption, includes: a semiconductor wafer that is freestanding and carrier-less; having a thickness, and having a first surface, and a having second surface that is opposite to that first surface; and non-transcending gaps within the semiconductor wafer. Each non-transcending gap penetrates from the first surface towards the second surface, but reaches to a depth of between 50 to 99 percent of the thickness of the semiconductor wafer, and does not reach said second surface. Each non-transcending gap does not entirely penetrate through an entirety of the thickness of the semiconductor wafer. The semiconductor wafer maintains between 1 to 50 percent of the thickness of the semiconductor wafer as an intact and non-penetrated thin layer of semiconductor wafer that remains intact and non-penetrated by the non-transcending gaps. The non-transcending gaps in the semiconductor wafer are filled with an elastomer, and they absorb and dissipate mechanical forces.

    Flexible photovoltaic cell, and methods and systems of producing it

    公开(公告)号:US11978815B2

    公开(公告)日:2024-05-07

    申请号:US17353867

    申请日:2021-06-22

    申请人: SOLARPAINT LTD.

    摘要: A flexible photovoltaic (PV) cell having enhanced properties of mechanical impact absorption, includes: a semiconductor wafer that is freestanding and carrier-less; having a thickness, and having a first surface, and a having second surface that is opposite to that first surface; a set of non-transcending gaps within the semiconductor wafer. Each non-transcending gap penetrates from the first surface towards the second surface but reaches to a depth of between 80 to 99 percent of the thickness of the semiconductor wafer, and does not reach said second surface. Each non-transcending gap does not entirely penetrate through an entirety of the thickness of the semiconductor wafer. The semiconductor wafer maintains at least 1 percent of the thickness of the semiconductor wafer as an intact and non-penetrated thin layer of semiconductor wafer that remains intact and non-penetrated by the non-transcending gaps. The intact and non-penetrated thin layer of semiconductor wafer absorbs and dissipates mechanical forces.

    Flexible Photovoltaic Cell, and Methods and Systems of Producing It

    公开(公告)号:US20210313478A1

    公开(公告)日:2021-10-07

    申请号:US17353867

    申请日:2021-06-22

    申请人: SOLARPAINT LTD.

    摘要: A flexible photovoltaic (PV) cell having enhanced properties of mechanical impact absorption, includes: a semiconductor wafer that is freestanding and carrier-less; having a thickness, and having a first surface, and a having second surface that is opposite to that first surface; a set of non-transcending gaps within the semiconductor wafer. Each non-transcending gap penetrates from the first surface towards the second surface but reaches to a depth of between 80 to 99 percent of the thickness of the semiconductor wafer, and does not reach said second surface. Each non-transcending gap does not entirely penetrate through an entirety of the thickness of the semiconductor wafer. The semiconductor wafer maintains at least 1 percent of the thickness of the semiconductor wafer as an intact and non-penetrated thin layer of semiconductor wafer that remains intact and non-penetrated by the non-transcending gaps. The intact and non-penetrated thin layer of semiconductor wafer absorbs and dissipates mechanical forces.