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公开(公告)号:US20240304740A1
公开(公告)日:2024-09-12
申请号:US18664329
申请日:2024-05-15
申请人: SOLARPAINT LTD.
IPC分类号: H01L31/0445 , H01L31/0224 , H01L31/18
CPC分类号: H01L31/0445 , H01L31/022458 , H01L31/186
摘要: A hybrid photovoltaic (PV) device includes: a rigid PV segment, having one or more PV cells that convert light to electricity, wherein the rigid PV segment is non-foldable and non-bendable; and a co-located flexible PV segment, wherein the flexible PV segment is foldable or bendable without being damaged; electric connectors, that connect between (i) electric current or voltage generated by the rigid PV segment, and (ii) electric current or voltage generated by the flexible PV segment; a unified encapsulation layer, encapsulating together both the rigid PV segment and the co-located flexible PV segment. The rigid PV segment, the co-located flexible PV segment, the electric connectors, and the unified encapsulation layer, form together the hybrid PV device as a single stand-alone PV device that converts light to electricity, and has at least one rigid region corresponding to the rigid PV segment and at least one flexible region corresponding to the co-located flexible PV segment.
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公开(公告)号:US20240282874A1
公开(公告)日:2024-08-22
申请号:US18635039
申请日:2024-04-15
申请人: SOLARPAINT LTD.
IPC分类号: H01L31/0445 , H01L31/0224 , H01L31/18
CPC分类号: H01L31/0445 , H01L31/022458 , H01L31/186
摘要: A flexible photovoltaic (PV) cell having enhanced properties of mechanical impact absorption, includes: a semiconductor wafer that is freestanding and carrier-less; having a thickness, and having a first surface, and a having second surface that is opposite to that first surface; and non-transcending gaps within the semiconductor wafer. Each non-transcending gap penetrates from the first surface towards the second surface, but reaches to a depth of between 50 to 99 percent of the thickness of the semiconductor wafer, and does not reach said second surface. Each non-transcending gap does not entirely penetrate through an entirety of the thickness of the semiconductor wafer. The semiconductor wafer maintains between 1 to 50 percent of the thickness of the semiconductor wafer as an intact and non-penetrated thin layer of semiconductor wafer that remains intact and non-penetrated by the non-transcending gaps. The non-transcending gaps in the semiconductor wafer are filled with an elastomer, and they absorb and dissipate mechanical forces.
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公开(公告)号:US11978815B2
公开(公告)日:2024-05-07
申请号:US17353867
申请日:2021-06-22
申请人: SOLARPAINT LTD.
IPC分类号: H01L31/0445 , H01L31/0224 , H01L31/18
CPC分类号: H01L31/0445 , H01L31/022458 , H01L31/186
摘要: A flexible photovoltaic (PV) cell having enhanced properties of mechanical impact absorption, includes: a semiconductor wafer that is freestanding and carrier-less; having a thickness, and having a first surface, and a having second surface that is opposite to that first surface; a set of non-transcending gaps within the semiconductor wafer. Each non-transcending gap penetrates from the first surface towards the second surface but reaches to a depth of between 80 to 99 percent of the thickness of the semiconductor wafer, and does not reach said second surface. Each non-transcending gap does not entirely penetrate through an entirety of the thickness of the semiconductor wafer. The semiconductor wafer maintains at least 1 percent of the thickness of the semiconductor wafer as an intact and non-penetrated thin layer of semiconductor wafer that remains intact and non-penetrated by the non-transcending gaps. The intact and non-penetrated thin layer of semiconductor wafer absorbs and dissipates mechanical forces.
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公开(公告)号:US11908970B2
公开(公告)日:2024-02-20
申请号:US17460375
申请日:2021-08-30
发明人: Yuya Honishi , Soichiro Shibasaki , Naoyuki Nakagawa , Mutsuki Yamazaki , Yoshiko Hiraoka , Kazushige Yamamoto
IPC分类号: H01L31/18 , H01L31/043 , H01L31/0445 , H01L31/0224 , H01L31/032 , H01L31/074 , H02S10/40 , H02S40/38 , H01L31/072 , H01L31/0725
CPC分类号: H01L31/18 , H01L31/022466 , H01L31/032 , H01L31/043 , H01L31/0445 , H01L31/072 , H01L31/074 , H01L31/0725 , H02S10/40 , H02S40/38
摘要: A process for manufacturing a multilayered thin film, includes: forming a photovoltaic conversion layer, comprising Cu2O as a main component, on a first transparent electrode; and placing, under a first atmosphere at an oxygen level of from 5.0×10−8 [g/L] to 5.0×10−5 [g/L] for 1 h to 1600 h, a member having the photovoltaic conversion layer formed on the first transparent electrode.
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公开(公告)号:US11817524B1
公开(公告)日:2023-11-14
申请号:US17526623
申请日:2021-11-15
发明人: Roger E. Welser , Ashok K. Sood
IPC分类号: H01L31/00 , H01L31/18 , H01L31/0216 , G02B1/115 , H01L31/054 , H01L31/0232 , H01L31/0352 , H01L31/0725 , H01L31/0445 , H01L31/056 , H01L31/0203 , H01L31/0224 , H01L31/0735 , H01L31/048 , H01L31/0304 , H01L31/065
CPC分类号: H01L31/1884 , G02B1/115 , H01L31/0203 , H01L31/0232 , H01L31/02165 , H01L31/02168 , H01L31/022425 , H01L31/022475 , H01L31/035236 , H01L31/035263 , H01L31/048 , H01L31/0445 , H01L31/0481 , H01L31/056 , H01L31/0543 , H01L31/0547 , H01L31/0725 , H01L31/0735 , H01L31/184 , H01L31/186 , H01L31/1844 , H01L31/03046 , H01L31/065 , Y02E10/50 , Y02E10/52 , Y02E10/544
摘要: Refractive optical element designs are provided for high geometric optical efficiency over a wide range of incident angles. To minimize Fresnel reflection losses, the refractive optical element designs employ multiple encapsulant materials, differing in refractive index. Concentrator photovoltaic subassemblies are formed by embedding a high efficiency photovoltaic device within the refractive optical element, along with appropriate electrical contacts and heat sinks. Increased solar electric power output is obtained by employing a single-junction III-V material structure with light-trapping structures.
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公开(公告)号:US20230187822A1
公开(公告)日:2023-06-15
申请号:US17648888
申请日:2022-01-25
发明人: Abu T. Sayem , Juhi H. Godhwani , Mohamed Bouchoucha , Jacob T. Zeller , John M. Kenkel , Oliver R. F. Gagliano , Georgios Atmatzakis , Lionel J. Dupuy
IPC分类号: H01Q1/44 , H01Q13/10 , H01Q7/00 , H01Q9/06 , H01L31/0445
CPC分类号: H01Q1/44 , H01Q13/10 , H01Q7/00 , H01Q9/06 , H01L31/0445
摘要: An electronic device comprises a housing, a display stack, a bezel, a solar cell, and a first antenna. The housing includes a bottom wall and a side wall coupled to the bottom wall, the side wall and the bottom wall define a portion of an internal cavity. The display stack includes a display cover and a solar cell configured to output an electric power having a power level corresponding to an intensity of light received by the solar cell. The bezel is coupled to an upper edge of the side wall of the housing, the bezel enclosing the display cover. The solar cell includes a substrate and a photovoltaic layer, the photovoltaic layer including a mesh of electrically conductive material positioned on the substrate and a first opening. The first antenna is formed by the first opening of the photovoltaic layer.
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公开(公告)号:US11655153B2
公开(公告)日:2023-05-23
申请号:US16659172
申请日:2019-10-21
IPC分类号: C01B32/194 , C07D409/14 , H01L31/0445 , H01L31/0216 , C07D257/08 , C07D513/04 , C07D517/04 , C07D519/00 , H01L51/00 , H01L51/44 , H01G9/20
CPC分类号: C01B32/194 , C07D257/08 , C07D409/14 , C07D513/04 , C07D517/04 , C07D519/00 , H01L31/02167 , H01L31/0445 , H01L51/0067 , H01L51/0068 , H01L51/0072 , C01B2204/32 , H01G9/2059 , H01L51/0071 , H01L51/0094 , H01L51/447
摘要: In an embodiment is provided a method of making a photo-absorbing composition that includes forming a donor-acceptor small molecule (DASM) by bonding an electron donor portion to an electron acceptor portion; and bonding the DASM to a nanographene structure using a Stille coupling reaction, a Suzuki cross-coupling reaction, or a C—H activation cross-coupling reaction. In another embodiment is provided films that include a photo-absorbing composition.
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公开(公告)号:US20220190178A1
公开(公告)日:2022-06-16
申请号:US17682293
申请日:2022-02-28
发明人: Yoonmook KANG , Donghwan KIM , Haeseok LEE , Yongseok JUN
IPC分类号: H01L31/0475 , H01L31/0445 , H02S40/34 , H01L31/18
摘要: Provided, according to the present invention, is a solar cell module having excellent visibility, the solar cell module comprising: a transparent substrate; and a solar cell which is installed inside the transparent substrate and converts sunlight into photoelectricity, wherein the solar cell is installed so as to be horizontally arrayed in the transparent substrate.
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公开(公告)号:US11277095B2
公开(公告)日:2022-03-15
申请号:US16488317
申请日:2018-02-23
发明人: Jörg Ackermann , Sadok Ben Dkhil , Olivier Margeat , David Duché , Ludovic Escoubas , Jean-Jacques Simon , Christine Videlot-Ackermann
IPC分类号: H01L31/0445 , H02S99/00 , H01L51/00 , H01L51/42
摘要: A method for producing a multicoloured optoelectronic device is provided as well as a device produced with that method. An electrically conducting substrate including a first and second portion adjacent to the first portion is obtained. Then a first photoactive material having optical properties in a first frequency range is deposited on the first portion and a second photoactive material differing from the first photoactive material having optical properties in a second frequency range is deposited on the second portion, the first photoactive material contacting the second photoactive material, forming a photoactive layer of the multicoloured optoelectronic device.
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公开(公告)号:US20210313478A1
公开(公告)日:2021-10-07
申请号:US17353867
申请日:2021-06-22
申请人: SOLARPAINT LTD.
IPC分类号: H01L31/0445 , H01L31/0224 , H01L31/18
摘要: A flexible photovoltaic (PV) cell having enhanced properties of mechanical impact absorption, includes: a semiconductor wafer that is freestanding and carrier-less; having a thickness, and having a first surface, and a having second surface that is opposite to that first surface; a set of non-transcending gaps within the semiconductor wafer. Each non-transcending gap penetrates from the first surface towards the second surface but reaches to a depth of between 80 to 99 percent of the thickness of the semiconductor wafer, and does not reach said second surface. Each non-transcending gap does not entirely penetrate through an entirety of the thickness of the semiconductor wafer. The semiconductor wafer maintains at least 1 percent of the thickness of the semiconductor wafer as an intact and non-penetrated thin layer of semiconductor wafer that remains intact and non-penetrated by the non-transcending gaps. The intact and non-penetrated thin layer of semiconductor wafer absorbs and dissipates mechanical forces.
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