公开(公告)号：WO2005112095A1

公开(公告)日：2005-11-24

申请号：PCT/US2005/009820

申请日：2005-03-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GATES, Stephen M. ,  GRILL, Alfred ,  MEDEIROS, David R. ,  NEUMAYER, Deborah ,  NGUYEN, Son Van ,  PATEL, Vishnubhai V. ,  WANG, Xinhui

Inventor： GATES, Stephen M. ,  GRILL, Alfred ,  MEDEIROS, David R. ,  NEUMAYER, Deborah ,  NGUYEN, Son Van ,  PATEL, Vishnubhai V. ,  WANG, Xinhui

IPC: H01L21/312

CPC classification number: H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/31695

Abstract: A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition ("PECVD") process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

Abstract translation: 公开了一种使用等离子体增强化学气相沉积（“PECVD”）工艺在平行板化学气相沉积工艺中制造包含Si，C，O和H原子的热稳定超低介电常数膜的方法。 还公开了通过该方法制备的包含热稳定的超低介电常数材料的绝缘层的电子器件。 为了制造热稳定的超低介电常数膜，使用特定的前体材料，例如硅烷衍生物，例如二乙氧基甲基硅烷（DEMS）和有机分子，例如双环庚二烯和环戊烯氧化物。

公开(公告)号：WO2005104140A1

公开(公告)日：2005-11-03

申请号：PCT/US2005/007408

申请日：2005-03-07

Applicant: APPLIED MATERIALS, INC. ,  NGUYEN, Son Van ,  M'SAAD, Hichem ,  KIM, Bok Hoen

Inventor： NGUYEN, Son Van ,  M'SAAD, Hichem ,  KIM, Bok Hoen

IPC: H01B3/46

CPC classification number: H01L21/02126 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/02343 ,  H01L21/31111 ,  H01L21/31695 ,  H01L21/7682

Abstract: A porous dielectric film for use in electronic devices is disclosed that is formed by removal of soluble nano phase porogens. A silicon based dielectric film having soluble porogens dispersed therein is prepared by chemical vapor deposition (CVD) or by spin on glass (S.O.G.). Examples of preferable porogens include compounds such as germanium oxide (GeO 2 ) and boron oxide (B 2 O 3 ). Hot water can be used in processing to wet etch the film, thereby removing the porogens and providing the porous dielectric film. The silicon based dielectric film may be a carbon doped silicon oxide in order to further reduce the dielectric constant of the film. Additionally, the porous dielectric film may be treated by an electron beam to enhance the electrical and mechanical properties of the film.

Abstract translation: 公开了一种用于电子器件的多孔绝缘膜，其通过去除可溶性纳米相致密剂而形成。 通过化学气相沉积（CVD）或通过旋涂在玻璃（S.O.G.）上制备其中分散有可溶性致孔剂的硅基电介质膜。 优选的致​​孔剂的实例包括诸如氧化锗（GeO 2）和氧化硼（B 2 O 3）的化合物。 热水可用于湿法蚀刻膜的处理，从而除去致孔剂并提供多孔介电膜。 硅基电介质膜可以是碳掺杂的氧化硅，以便进一步降低膜的介电常数。 此外，可以通过电子束处理多孔电介质膜以增强膜的电气和机械性能。

公开(公告)号：WO2004079814B1

公开(公告)日：2005-03-17

申请号：PCT/US2004006265

申请日：2004-03-02

Applicant: APPLIED MATERIALS INC ,  NGUYEN SON VAN ,  ZHENG YI

Inventor： NGUYEN SON VAN ,  ZHENG YI

IPC: C23C16/40 ,  C23C16/515 ,  H01L21/312 ,  H01L21/316

CPC classification number: H01L21/02126 ,  C23C16/401 ,  C23C16/515 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/31633 ,  Y10T428/31663

Abstract: A method for depositing a low dielectric constant film is provided. The low dielectric constant film includes alternating sublayers, which include at least one carbon-doped silicon oxide sublayer. The sublayers are deposited by a plasma process than includes pulses of RF power. The alternating sublayers are deposited from two or more compounds that include at least one organosilicon compound. The two or more compounds and processing conditions are selected such that adjacent sublayers have different and improved mechanical properties.

Abstract translation: 提供了用于沉积低介电常数膜的方法。 低介电常数膜包括交替的子层，其包括至少一个碳掺杂的氧化硅子层。 通过等离子体工艺沉积子层，而不包括RF功率的脉冲。 交替的亚层由两种或更多种包含至少一种有机硅化合物的化合物沉积。 选择两种或更多种化合物和加工条件，使得相邻的亚层具有不同的和改进的机械性能。

公开(公告)号：WO2004094702A2

公开(公告)日：2004-11-04

申请号：PCT/US2004/012012

申请日：2004-04-16

Applicant: APPLIED MATERIALS, INC. ,  ELLWANGER, Russell, C. ,  YANG, Michael, X. ,  XI, Ming ,  BRITCHER, Eric, B. ,  DONOSO, Bernardo ,  PANG, Lily, L. ,  SHERMAN, Svetlana ,  HO, Henry ,  NGUYEN, Anh, N. ,  LERNER, Alexander, N. ,  D'AMBRA, Allen, L. ,  SHANMUGASUNDRAM, Arulkumar ,  ISHIKAWA, Tetsuya ,  RABINOVICH, Yevgeniy ,  LUBOMIRSKY, Dmitry ,  MOK, Yeuk-Fai, Edwin ,  NGUYEN, Son, T.

Inventor： YANG, Michael, X. ,  XI, Ming ,  BRITCHER, Eric, B. ,  DONOSO, Bernardo ,  PANG, Lily, L. ,  SHERMAN, Svetlana ,  HO, Henry ,  NGUYEN, Anh, N. ,  LERNER, Alexander, N. ,  D'AMBRA, Allen, L. ,  SHANMUGASUNDRAM, Arulkumar ,  ISHIKAWA, Tetsuya ,  RABINOVICH, Yevgeniy ,  LUBOMIRSKY, Dmitry ,  MOK, Yeuk-Fai, Edwin ,  NGUYEN, Son, T.

IPC: C25D

CPC classification number: H01L21/67167 ,  B08B3/02 ,  C25D5/003 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D21/02 ,  C25D21/08 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/6723 ,  H01L21/68 ,  H01L21/6838 ,  H01L21/68707

Abstract: Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

Abstract translation: 本发明的实施方案通常提供电化学电镀系统。 电镀系统包括位于与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与 主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

公开(公告)号：WO2004079814A2

公开(公告)日：2004-09-16

申请号：PCT/US2004/006265

申请日：2004-03-02

Applicant: APPLIED MATERIALS INC. ,  NGUYEN, Son, Van ,  ZHENG, Yi

Inventor： NGUYEN, Son, Van ,  ZHENG, Yi

IPC: H01L21/312

CPC classification number: H01L21/02126 ,  C23C16/401 ,  C23C16/515 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/31633 ,  Y10T428/31663

Abstract: A method for depositing a low dielectric constant film is provided. The low dielectric constant film includes alternating sublayers, which include at least one carbon-doped silicon oxide sublayer. The sublayers are deposited by a plasma process than includes pulses of RF power. The alternating sublayers are deposited from two or more compounds that include at least one organosilicon compound. The two or more compounds and processing conditions are selected such that adjacent sublayers have different and improved mechanical properties.

Abstract translation: 提供了一种沉积低介电常数膜的方法。 低介电常数膜包括交替的亚层，其包括至少一个碳掺杂的氧化硅子层。 子层通过等离子体处理而不是包括RF功率的脉冲进行沉积。 交替的亚层由两种或更多种包含至少一种有机硅化合物的化合物沉积。 选择两种或更多种化合物和加工条件使得相邻的亚层具有不同的和改进的机械性能。

公开(公告)号：WO2013059102A1

公开(公告)日：2013-04-25

申请号：PCT/US2012/060104

申请日：2012-10-12

Applicant: APPLIED MATERIALS, INC. ,  NG, Tuoh-Bin ,  MELNIK, Yuriy ,  PANG, Lily ,  TUNCEL, Eda ,  CHEN, Lu ,  NGUYEN, Son T.

Inventor： NG, Tuoh-Bin ,  MELNIK, Yuriy ,  PANG, Lily ,  TUNCEL, Eda ,  CHEN, Lu ,  NGUYEN, Son T.

IPC: H01L21/205

CPC classification number: C23C16/303 ,  C23C16/4488 ,  C23C16/45574 ,  C23C16/4558 ,  Y10T137/0318 ,  Y10T137/8593

Abstract: Described herein are exemplary apparatuses having multiple gas distribution assemblies in accordance with one embodiment. In one embodiment, the apparatus includes two or more gas distribution assemblies. Each gas distribution assembly has orifices through which at least one process gas is introduced into a processing chamber. The two or more gas distribution assemblies may be designed to have complementary characteristic radial film growth rate profiles.

Abstract translation: 这里描述的是具有根据一个实施例的多个气体分配组件的示例性装置。 在一个实施例中，该装置包括两个或更多个气体分配组件。 每个气体分配组件具有孔，至少一个处理气体通过该孔被引入处理室。 两个或更多个气体分配组件可被设计成具有互补的特征径向膜生长速率曲线。

公开(公告)号：WO2012078443A1

公开(公告)日：2012-06-14

申请号：PCT/US2011/062839

申请日：2011-12-01

Applicant: ALCOA INC. ,  HARBIN, Thomas ,  LE, Tung ,  NGUYEN, Son

Inventor： HARBIN, Thomas ,  LE, Tung ,  NGUYEN, Son

IPC: F16B39/02

CPC classification number: F16B39/02 ,  F01D5/026 ,  F04D29/054

Abstract: A locking nut assembly (10) including a bearing nut (12) having a plurality of external serrations (30), a shaft nut (14) having a plurality of external serrations (60), and a locking collar (16) having a plurality of internal serrations (92). The bearing nut (12) and the shaft nut (14) are threadedly installed on a shaft assembly (20) having an impeller (106), a bearing (1 16), and a spline adapter (118) installed within the impeller (106). The plurality of serrations (30) of the bearing nut (14) align with the plurality of serrations (60) of the shaft nut (14) when they are installed on the impeller (106). The locking collar (16) is installed on the bearing nut (12) and the shaft nut (14) so that the aligned plurality of serrations (30) of the bearing nut (12) and the plurality of serrations (60) of the shaft nut (14) engage the plurality of serrations (92) of the locking collar (16). The locking collar (16) is retained on the bearing nut (12) and shaft nut (14) by a retaining ring (18).

Abstract translation: 一种锁定螺母组件（10），包括具有多个外部锯齿（30）的轴承螺母（12），具有多个外部锯齿（60）的轴螺母（14）和具有多个外部锯齿 的内部锯齿（92）。 轴承螺母（12）和轴螺母（14）螺纹地安装在轴组件（20）上，轴组件（20）具有安装在叶轮（106）内的叶轮（106），轴承（116）和花键适配器（118） ）。 当轴承螺母（14）的多个锯齿（30）安装在叶轮（106）上时，与轴螺母（14）的多个锯齿（60）对准。 锁定环（16）安装在轴承螺母（12）和轴螺母（14）上，使得轴承螺母（12）的对齐的多个锯齿（30）和轴的多个锯齿（60） 螺母（14）接合锁定环（16）的多个锯齿（92）。 锁定环（16）通过保持环（18）保持在轴承螺母（12）和轴螺母（14）上。

公开(公告)号：WO2010129292A4

公开(公告)日：2011-03-31

申请号：PCT/US2010032597

申请日：2010-04-27

Applicant: APPLIED MATERIALS INC ,  NIJHAWAN SANDEEP ,  BURROWS BRIAN H ,  ISHIKAWA TETSUYA ,  KRYLIOUK OLGA ,  VASUDEV ANAND ,  SU JIE ,  QUACH DAVID H ,  CHANG ANZHONG ,  MELNIK YURIY ,  RATIA HARSUKHDEEP S ,  NGUYEN SON T ,  PANG LILY

Inventor： NIJHAWAN SANDEEP ,  BURROWS BRIAN H ,  ISHIKAWA TETSUYA ,  KRYLIOUK OLGA ,  VASUDEV ANAND ,  SU JIE ,  QUACH DAVID H ,  CHANG ANZHONG ,  MELNIK YURIY ,  RATIA HARSUKHDEEP S ,  NGUYEN SON T ,  PANG LILY

IPC: H01L33/00

CPC classification number: H01L21/67109 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/67207 ,  H01L33/007

Abstract: The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.

Abstract translation: 本发明通常提供用于形成LED结构的装置和方法。 本发明的一个实施例提供了一种用于制造化合物氮化物结构的方法，包括：通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素和氮的第一层或氮 化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中的第一层上形成包括第二III族元素和氮的第二层，并且形成包含第三III族元素和氮上的第三层 第二层采用MOCVD工艺。

公开(公告)号：WO2010123877A3

公开(公告)日：2011-01-20

申请号：PCT/US2010031723

申请日：2010-04-20

Applicant: APPLIED MATERIALS INC ,  TRAN BINH ,  CUI ANQING ,  HWANG BERNARD L ,  NGUYEN SON T ,  NGUYEN ANH N ,  SEUTTER SEAN M ,  TAO XIANZHI

Inventor： TRAN BINH ,  CUI ANQING ,  HWANG BERNARD L ,  NGUYEN SON T ,  NGUYEN ANH N ,  SEUTTER SEAN M ,  TAO XIANZHI

IPC: H01L21/205

CPC classification number: H01L21/6719 ,  C23C16/4401 ,  C23C16/4409 ,  C23C16/45512 ,  C23C16/45561 ,  H01L21/68742 ,  H01L21/68785

Abstract: Embodiments of the invention provide improved apparatus for depositing layers on substrates, such as by chemical vapor deposition (CVD). The inventive apparatus disclosed herein may advantageously facilitate one or more of depositing films having reduced film thickness non-uniformity within a given process chamber, improved particle performance (e.g., reduced particles on films formed in the process chamber), chamber-to-chamber performance matching amongst a plurality of process chambers, and improved process chamber serviceability.

Abstract translation: 本发明的实施例提供了用于在衬底上沉积层（例如通过化学气相沉积（CVD））的改进的装置。 本文公开的本发明的装置可以有利地促进一种或多种在给定的处理室内具有减小的膜厚度不均匀的沉积膜，改善的颗粒性能（例如，在处理室中形成的膜上的还原颗粒），室到室的性能 在多个处理室之间进行匹配，以及改进的处理室可维护性。

公开(公告)号：WO2010129292A2

公开(公告)日：2010-11-11

申请号：PCT/US2010/032597

申请日：2010-04-27

Applicant: APPLIED MATERIALS, INC. ,  NIJHAWAN, Sandeep ,  BURROWS, Brian, H. ,  ISHIKAWA, Tetsuya ,  KRYLIOUK, Olga ,  VASUDEV, Anand ,  SU, Jie ,  QUACH, David, H. ,  CHANG, Anzhong ,  MELNIK, Yuriy ,  RATIA, Harsukhdeep, S. ,  NGUYEN, Son, T. ,  PANG, Lily

Inventor： NIJHAWAN, Sandeep ,  BURROWS, Brian, H. ,  ISHIKAWA, Tetsuya ,  KRYLIOUK, Olga ,  VASUDEV, Anand ,  SU, Jie ,  QUACH, David, H. ,  CHANG, Anzhong ,  MELNIK, Yuriy ,  RATIA, Harsukhdeep, S. ,  NGUYEN, Son, T. ,  PANG, Lily

IPC: H01L33/00

CPC classification number: H01L21/67109 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/67207 ,  H01L33/007

Abstract: The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.

Abstract translation: 本发明总体上提供了用于形成LED结构的装置和方法。 本发明的一个实施方案提供了一种用于制造氮化物复合结构的方法，包括通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素的第一层和氮 化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中在第一层上形成包含第二组III元素的第二层和氮，并且形成包含第三族III族元素和氮的第三层 第二层通过MOCVD过程。