Abstract:
Methods and systems for optically characterizing a turbid sample are provided. A structured light beam is impinged on the sample. The sample includes an embedded region. A reflected light image of the structured light beam is detected from the sample. A measured reflectance image of the structured light beam for the sample is determined based on the reflected light image and a reflectance standard. The following parameters are determined: absorption coefficients ÿa, scattering coefficient ÿs and anisotropy factor g of the sample from the reflectance image. A size parameter of the embedded region is estimated based on the absorption coefficients ÿa, scattering coefficient ÿs and/or anisotropy factor g of the sample from the measured reflectance image.
Abstract:
Methods and systems for optically characterizing a turbid sample are provided. A structured light beam is impinged on the sample. The sample includes an embedded region. A reflected light image of the structured light beam is detected from the sample. A measured reflectance image of the structured light beam for the sample is determined based on the reflected light image and a reflectance standard. The following parameters are determined: absorption coefficients ÿa, scattering coefficient ÿs and anisotropy factor g of the sample from the reflectance image. A size parameter of the embedded region is estimated based on the absorption coefficients ÿa, scattering coefficient ÿs and/or anisotropy factor g of the sample from the measured reflectance image.
Abstract:
An embodiment of a method of performing thermoreflectance measurements with an imaging system comprises: reflecting radiation from a number of points in a sample in response to an illuminating radiation while a temperature modulation is applied to the sample; acquiring digital images of the reflected radiation after the reflected radiation passes through an aperture; and deriving a map of relative reflectivity of the sample based on the digital images. At least a portion of the illuminating radiation can pass through at least a portion of the sample and is reflected at a change refractive index interface.
Abstract:
An integrated optical sensor operating in the frequency domain is disclosed together with a system and method for detecting the presence of a sample to be detected with the optical sensor. The optical sensor comprises a substrate for supporting the optical sensor, at least two substantially identical gratings or grating-based resonators, a waveguide directional coupler coupled to the gratings and arranged to receive light from a light source and propagate the light through to the gratings, and a flow cell for housing each of the gratings, each flow cell having a fluidic input and a fluidic output, one flow cell for receiving a reference fluid and another flow cell for receiving a fluid with the sample to be detected; the sample to be detected alters the effective refractive index of the propagating mode inside the grating by binding or being adsorbed by the grating to alter the optical frequency of the light that propagates through the grating. In an embodiment, the grating is surface functionalized with a sensitive layer to enable sample adherence or adsorption.
Abstract:
Acoplador de red de difracción (100, 200, 300, 400) que comprende una guiaonda óptica (101, 201, 301, 401) con una primera superficie (102, 202, 302, 402) y una segunda superficie (103, 203, 303, 403) opuesta a dicha primera superficie (102, 202, 302, 402), donde dicha guiaonda óptica (101, 201, 301, 401) tiene una red de difracción (110, 210, 310, 410) en una de dichas superficies. Adicionalmente comprende una película de polímero blando (120, 220, 320, 420) depositada sobre y fijada a dicha guiaonda óptica (101, 201, 301, 401), donde dicha película de polímero blando (120, 220, 320, 420) rodea parcialmente dicha guiaonda óptica (101, 201, 301, 401) y deja despejada una de dichas dos superficies de dicha guiaonda óptica (101, 201, 301, 401), siendo así el acoplador de red de difracción (100, 200, 300, 400) montable sobre y temporalmente adherible a un espécimen (230, 330, 430) mediante la fijación de dicha película de polímero blando (120, 220, 320, 420) a dicho espécimen (230, 330, 430).
Abstract:
The invention relates to a carrier (11) and an apparatus (100) for optical detection in a sample (1) in a sample chamber (2). The carrier (11) comprises an optical structure (50) for refracting an input light beam (Ll) into the adjacent sample chamber (2) and for collecting an output light beam (L2) from light that originates in the sample chamber (2) from the input light beam. Preferably, the optical structure (50) comprises grooves in the surface (12) of the carrier (11) in which the input light beam is transmitted over a short distance through a sample. The optical structure (50) can also be used for a wetting detection.
Abstract:
The invention relates to a carrier (11) and an apparatus (100) for optical detection in a sample (1) in a sample chamber (2). The carrier (11) comprises an optical structure (50) for refracting an input light beam (Ll) into the adjacent sample chamber (2) and for collecting an output light beam (L2) from light that originates in the sample chamber (2) from the input light beam. Preferably, the optical structure (50) comprises grooves in the surface (12) of the carrier (11) in which the input light beam is transmitted over a short distance through a sample. The optical structure (50) can also be used for a wetting detection.
Abstract:
Ein System (30) zum Bestimmen einer Brechzahl (n (Objekt)) eines Messobjekts (31), mit einer Lichtquelle (32) zum Aussenden von Licht (33) einer vordefinierten Wellenlänge, einem integrierten Sensorelement (35) mit einem optoelektronischen Sensor (36) und einer Schichtstruktur (37) mit wenigstens einer strukturierten Metallschicht (44), wobei der opto-elektronische Sensor (36) und die Schichtstruktur (37) gemeinsam auf einem Halbleitersubstrat (38) integriert sind, einer Einrichtung (39) zum Halten des Messobjekts (31) zwischen dem integrierten Sensorelement (35) und der Lichtquelle (32), so dass die Schichtstruktur (37) zwischen dem Messobjekt (31) und dem optoelektronischen Sensor (36) angeordnet ist, und so dass sich ein Ausgangssignal des opto-elektronischen Sensors (36) auf das Licht (33) mit der vordefinierten Wellenlänge abhängig von der Brechzahl (n(Objekt)) des Messobjekts (31) ändert, und einer Einrichtung (40) zum Ermitteln der Brechzahl (n(Objekt)) des Messobjekts (31) basierend auf dem Ausgangssignal des opto-elektronischen Sensors (36).
Abstract:
The device is based on a cross-correlator which measures the signal between a pair of oppositely chirped laser pulses. Two laser pulses, one with a positive chirp and one with a negative chirp, are mixed on a beamsplitter. The two resulting beams pass through a reference or a sample arm and are subsequently mixed on a non-lmear crystal. The signal from the interferometer is the sum frequency generation produced in that crystal. The reference arm contains a moveable delay which is used to change the relative timing of the two beams in the interferometer. The sum frequency generation in the narrow band of frequencies is the signal from the device and is measured as a function of the delay. Alternatively, a pure dispersive phase shift could be used in place of the two laser pulses.