Abstract:
This invention relates to a semiconductor having protruding contacts comprising, a first semiconductor substrate (2) having at least one interconnect (8) located substantially within the first substrate (2), and a second semiconductor substrate (20) having at least one protruding contact point (26) that substantially contacts at least one interconnect (8).
Abstract:
This invention relates to a semiconductor having protruding contacts comprising, a first semiconductor substrate (2) having at least one interconnect (8) located substantially within the first substrate (2), and a second semiconductor substrate (20) having at least one protruding contact point (26) that substantially contacts at least one interconnect (8).
Abstract:
Various devices and methods employing a resistive phase change material (28, 428) are disclosed, including a voltage modulator comprising: a power source (30) having a first terminal (40) and a second terminal (42); a first electrode (20) electrically connected to the first terminal (40); a second electrode (22) electrically connected to the second terminal (42); a third electrode (26) electrically connected to the first electrode (20); and a resistive phase change (28) material between the second electrode (22) and the third electrode (26) , for use in displays.
Abstract:
A method of singulating electronic devices, including aligning a saw blade (215, 415, 515) over a lid street (244, 344, 544, 744) disposed on a lid substrate (240, 340, 440, 540, 740, 840) that is disposed over a device substrate (120, 220, 320, 420, 520, 620, 620, 820). The device substrate includes an electronic device (122a, 122b, 122c, 122d, 222, 222') disposed thereon, and the electronic device includes a bond pad (224, 224', 324, 324', 424, 424', 524, 524' 624, 824, 824') disposed on the device substrate, wherein the lid street is disposed over the bond pad. In addition, the method also includes sawing partially through the lid street to form a trench (246, 346) in the lid street. The trench includes a trench bottom (248, 348) disposed in the lid substrate.
Abstract:
A method and apparatus are provided for implementing an impulse ultra-wideband communications system which combines the technique of transmitted reference (TR) with a code-sifted reference scheme that separates the reference and the data pulses with a sequence of codes such as a subset of Walsh codes. The joint use of shifting codes (at the transmitter) and detection codes (at the receiver) enable correct detection of information bits from the reference pulse sequence and data pulse sequences which are transmitted simultaneously. The combination of the two techniques in ultra-wideband (UWB) radio systems removes the wideband delay elements required by conventional TR UWB systems. The invention provides a system with no analog carriers and lower complexities than other UWB systems, and which has better performances, higher tolerance to nonlinearity, and larger capacities.
Abstract:
A semiconductor storage device (30) including a tip electrode (40, 42, 114), a media electrode (48) and a storage media (44). The storage media has a storage area (46) configurable to be in one of a plurality of structural states to represent information stored at the storage area, by passing a current (60) through the storage area between the tip electrode and media electrode.
Abstract:
A method (700) is provided for selecting a pulse for driving a piezoelectric actuator (112). The method includes determining offset voltages and corresponding peak-to-peak voltages that achieve a desired drop velocity, determining energy per pulse for each offset voltage, and selecting an offset voltage and a corresponding peak-to-peak voltage for the pulse based on at least the energy per pulse for each offset voltage.
Abstract:
An imaging apparatus comprising a first electrically conductive pixel (30); and a first two point switching element (40) electrically connected to the pixel (30), a first voltage source (72) electrically coupled to a 'first side of the first two point switching element (40); a second switching element (50,150,250) electrically coupled to the pixel (30) and configured to drain charge from the pixel (30), and a second voltage source (82) electrically connected to the second switching element (50,150,250) to selectively actuate the second switching element (50,150,250).
Abstract:
A semiconductor storage device (30) including a tip electrode (40, 42, 114), a media electrode (48) and a storage media (44). The storage media has a storage area (46) configurable to be in one of a plurality of structural states to represent information stored at the storage area, by passing a current (60) through the storage area between the tip electrode and media electrode.