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    METHOD FOR CRITICAL DIMENSION REDUCTION USING CONFORMAL CARBON FILMS
    2.
    发明申请
    METHOD FOR CRITICAL DIMENSION REDUCTION USING CONFORMAL CARBON FILMS 审中-公开
    使用一致的碳膜减少关键尺寸的方法

    公开(公告)号：WO2016025114A1

    公开(公告)日：2016-02-18

    申请号：PCT/US2015/040420

    申请日：2015-07-14

    Applicant: APPLIED MATERIALS, INC.

    Inventor： MEBARKI, Bencherki ,  KIM, Bok Hoen ,  PADHI, Deenesh ,  MIAO, Li Yan ,  MANNA, Pramit ,  BENCHER, Christopher ,  NIAK, Mehul B. ,  DAI, Huixiong ,  NGAI, Christopher S. ,  DIEHL, Daniel Lee

    IPC: H01L21/027

    CPC classification number: H01L21/3088 ,  H01L21/02115 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31144

    Abstract: Embodiments of the disclosure generally provide a method of forming a reduced dimension pattern in a hardmask that is optically matched to an overlying photoresist layer. The method generally comprises of application of a dimension shrinking conformal carbon layer over the field region, sidewalls, and bottom portion of the patterned photoresist and the underlying hardmask at temperatures below the decomposition temperature of the photoresist. The methods and embodiments herein further involve removal of the conformal carbon layer from the bottom portion of the patterned photoresist and the hardmask by an etch process to expose the hardmask, etching the exposed hardmask substrate at the bottom portion, followed by the simultaneous removal of the conformal carbon layer, the photoresist, and other carbonaceous components. A hardmask with reduced dimension features for further pattern transfer is thus yielded.

    Abstract translation: 本公开的实施例通常提供在与上覆光致抗蚀剂层光学匹配的硬掩模中形成减小尺寸图案的方法。 该方法通常包括在低于光致抗蚀剂的分解温度的温度下，在图案化光致抗蚀剂的场区域，侧壁和底部施加尺寸收缩的保形碳层。 本文的方法和实施例还包括通过蚀刻工艺从图案化的光致抗蚀剂和硬掩模的底部部分去除保形碳层，以露出硬掩模，在底部蚀刻暴露的硬掩模衬底，随后同时去除 保形碳层，光致抗蚀剂等碳质组分。 因此产生了用于进一步模式转移的尺寸减小特征的硬掩模。

    METHODS FOR DEPOSITING DIELECTRIC FILMS VIA PHYSICAL VAPOR DEPOSITION PROCESSES
    3.
    发明申请
    METHODS FOR DEPOSITING DIELECTRIC FILMS VIA PHYSICAL VAPOR DEPOSITION PROCESSES 审中-公开
    通过物理蒸发沉积工艺沉积介电膜的方法

    公开(公告)号：WO2016205349A1

    公开(公告)日：2016-12-22

    申请号：PCT/US2016/037599

    申请日：2016-06-15

    Applicant: APPLIED MATERIALS, INC.

    Inventor： ZENG, Weimin ,  NGUYEN, Thanh X. ,  CHENG, Yana ,  CAO, Yong ,  DIEHL, Daniel Lee ,  GUGGILLA, Srinivas ,  WANG, Rongjun ,  TANG, Xianmin

    IPC: H01L21/02 ,  H01L21/203 ,  H01L21/205

    CPC classification number: H01L21/0234 ,  H01L21/0214 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02266

    Abstract: In some embodiments a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) depositing a dielectric layer to a first thickness atop a first surface of the substrate via a physical vapor deposition process; (b) providing a first plasma forming gas to a processing region of the physical vapor deposition process chamber, wherein the first plasma forming gas comprises hydrogen but not carbon; (c) providing a first amount of bias power to a substrate support to form a first plasma from the first plasma forming gas within the processing region of the physical vapor deposition process chamber; (d) exposing the dielectric layer to the first plasma; and (e) repeating (a)-(d) to deposit the dielectric film to a final thickness.

    Abstract translation: 在一些实施例中，处理设置在物理气相沉积处理室中的衬底支架顶上的衬底的方法包括：（a）通过物理气相沉积工艺在介质的第一表面顶部沉积介电层至第一厚度; （b）向所述物理气相沉积处理室的处理区域提供第一等离子体形成气体，其中所述第一等离子体形成气体包括氢而不是碳; （c）向所述衬底支撑件提供第一量的偏置功率以从所述物理气相沉积处理室的处理区域内的所述第一等离子体形成气体形成第一等离子体; （d）将介电层暴露于第一等离子体; 和（e）重复（a） - （d）将电介质膜沉积到最终厚度。

    OPTICALLY TUNED HARDMASK FOR MULTI-PATTERNING APPLICATIONS
    4.
    发明申请
    OPTICALLY TUNED HARDMASK FOR MULTI-PATTERNING APPLICATIONS 审中-公开
    用于多种应用的光学调谐硬件

    公开(公告)号：WO2014179694A1

    公开(公告)日：2014-11-06

    申请号：PCT/US2014/036586

    申请日：2014-05-02

    Applicant: APPLIED MATERIALS, INC.

    Inventor： BENCHER, Christopher Dennis ,  DIEHL, Daniel Lee ,  DAI, Huixiong ,  CAO, Yong ,  XU, Tingjun ,  ZENG, Weimin (Wilson) ,  XIE, Peng

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: H01L21/0337 ,  C23C14/0042 ,  C23C14/06 ,  C23C14/14 ,  C23C14/351 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02266 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/31144

    Abstract: The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiO x N y C z :H w , where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.

    Abstract translation: 本文的实施方案提供了用于形成PVD氧化硅或富硅氧化物或PVD SiN或富硅SiN或富SiC或富硅SiC的方法或前述组合，包括将氢控制掺入到迄今为止参考的化合物 作为SiO x N y C z：H w，其中w，x，y和z可以在0％至100％的浓度范围内变化，作为具有与曝光波长下的光致抗蚀剂基本匹配的光学性质的硬掩模。 因此使相对于光致抗蚀剂光学平坦化的硬掩模。 这允许在硬掩模中的多个序列的光刻和蚀刻，而光致抗蚀剂基本上保持没有光学形貌或反射率变化。

    SUBSTRATE CARRIER
    6.
    发明申请
    SUBSTRATE CARRIER 审中-公开

    公开(公告)号：WO2020154238A1

    公开(公告)日：2020-07-30

    申请号：PCT/US2020/014314

    申请日：2020-01-21

    Applicant: APPLIED MATERIALS, INC.

    Inventor： RUHLAND, Fred Eric ,  PATANKAR, Sumit S. ,  PARKHE, Vijay D. ,  DIEHL, Daniel Lee ,  ZHU, Mingwei ,  TAKAHAMA, Hiroyuki ,  SCHMIEDING, Randal D.

    IPC: H01L21/687 ,  H01L21/683 ,  C23C14/50

    Abstract: Embodiments of a substrate carrier are provided herein. In some embodiments, a substrate carrier includes a base plate, wherein the base plate is a thin, solid plate with no through holes or embedded components; and a plurality of raised portions extending from the base plate, wherein the plurality of raised portions include first raised portions and second raised portions, the first raised portions disposed radially inward from the second raised portions, wherein the base plate and the plurality of raised portions define pockets configured to retain a plurality of substrates, and wherein an upper surface of the second raised portions have a greater surface area than an upper surface of the first raised portions.

    LIGHT WAVE SEPARATION LATTICES AND METHODS OF FORMING LIGHT WAVE SEPARATION LATTICES
    7.
    发明申请
    LIGHT WAVE SEPARATION LATTICES AND METHODS OF FORMING LIGHT WAVE SEPARATION LATTICES 审中-公开
    光波分离光栅和形成光波分离光栅的方法

    公开(公告)号：WO2015156991A1

    公开(公告)日：2015-10-15

    申请号：PCT/US2015/022119

    申请日：2015-03-24

    Applicant: APPLIED MATERIALS, INC.

    Inventor： DIEHL, Daniel Lee ,  CAO, Yong ,  ZHU, Mingwei ,  CHEN, Tai-Chou Papo

    IPC: G02B27/10

    CPC classification number: G02B27/1013 ,  C23C14/0676 ,  G02B5/285

    Abstract: Light wave separation lattices and methods of formation are provided herein. In some embodiments, a light wave separation lattice includes a first layer having the formula RO X N Y , wherein the first layer has a first refractive index; and a second layer, different from the first layer, disposed atop the first layer, and having the formula R'O X N Y , wherein the second layer has a second refractive index different from the first refractive index, and wherein R and R' are each one of a metal or a dielectric material. In some embodiments, a method of forming a light wave separation lattice includes depositing a first layer having a predetermined desired refractive index atop a substrate by a physical vapor deposition process; and depositing a second layer, different from the first layer, atop the first layer, wherein the second layer has a predetermined second refractive index different from the first refractive index.

    Abstract translation: 本文提供光波分离晶格和形成方法。 在一些实施例中，光波分离晶格包括具有式ROXNY的第一层，其中第一层具有第一折射率; 和与第一层不同的第二层，设置在第一层上，并具有式R'OXNY，其中第二层具有不同于第一折射率的第二折射率，并且其中R和R'各自为一个 的金属或介电材料。 在一些实施例中，形成光波分离晶格的方法包括通过物理气相沉积工艺沉积具有预定折射率的第一层; 以及在所述第一层的顶部上沉积与所述第一层不同的第二层，其中所述第二层具有与所述第一折射率不同的预定的第二折射率。

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