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    CHIP SCALE LIGHT EMITTING DEVICE PACKAGE IN MOLDED LEADFRAME
    1.
    发明申请
    CHIP SCALE LIGHT EMITTING DEVICE PACKAGE IN MOLDED LEADFRAME 审中-公开
    芯片尺寸LED发光设备包装在模制的铅笔

    公开(公告)号：WO2014184698A1

    公开(公告)日：2014-11-20

    申请号：PCT/IB2014/061155

    申请日：2014-05-02

    Applicant: KONINKLIJKE PHILIPS N.V.

    Inventor： AKRAM, Salman ,  BHARDWAJ, Jyoti, Kiron ,  SILLEVIS SMITT, Johannes, Willem, Herman

    IPC: H01L33/62 ,  H01L33/48

    CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Light Emitting Diodes (LEDs) (20) are fabricated on a wafer substrate (40) with one or more thick metal layers (28,30) that provide structural support to each LED (20). The streets (33), or lanes, between individual LEDs (20) do not include this metal, and the wafer can be easily sliced/diced into singulated self-supporting LEDs (20). Before singulation, further processes may be applied at the wafer- level; after singulation, these self-supporting LEDs (20) can be picked and placed directly upon a leadframe (210). The leadframe (210) may be molded to provide a particular shape that enhances the light output efficiency and/or facilitates subsequent fabrication processes.

    Abstract translation: 发光二极管（LED）（20）在具有向每个LED（20）提供结构支撑的一个或多个厚金属层（28,30）的晶片衬底（40）上制造。 各个LED（20）之间的街道（33）或车道不包括该金属，并且可以容易地将晶片切片/切割成单独的自支撑LED（20）。 在分割之前，可以在晶片级应用进一步的工艺; 在分离之后，可以将这些自支撑LED（20）拾取并直接放置在引线框架（210）上。 引线框架（210）可以被模制以提供增强光输出效率和/或促进后续制造工艺的特定形状。

    LED WITH STRESS-BUFFER LAYER UNDER METALLIZATION LAYER
    2.
    发明申请
    LED WITH STRESS-BUFFER LAYER UNDER METALLIZATION LAYER 审中-公开
    LED在金属化层下的应力缓冲层

    公开(公告)号：WO2015001446A1

    公开(公告)日：2015-01-08

    申请号：PCT/IB2014/062535

    申请日：2014-06-23

    Applicant: KONINKLIJKE PHILIPS N.V.

    Inventor： AKRAM, Salman ,  ZOU, Quanbo

    IPC: H01L33/44 ,  H01L33/48

    CPC classification number: H01L33/44 ,  H01L33/0066 ,  H01L33/0079 ,  H01L33/486 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066

    Abstract: Semiconductor LED layers are epitaxially grown on a patterned surface of a sapphire substrate (10). The patterned surface improves light extraction. The LED layers include a p-type layer and an n-type layer. The LED layers are etched to expose the n-type layer. One or more first metal layers are patterned to electrically contact the p- type layer and the n-type layer to form a p-metal contact (32) and an n-metal contact (33). A dielectric polymer stress-buffer layer (36) is spin-coated over the first metal layers to form a substantially planar surface over the first metal layers. The stress-buffer layer has openings exposing the p-metal contact and the n-metal contact. Metal solder pads (44, 45) are formed over the stress-buffer layer and electrically contact the p-metal contact and the n-metal contact through the openings in the stress-buffer layer. The stress-buffer layer acts as a buffer to accommodate differences in CTEs of the solder pads and underlying layers.

    Abstract translation: 在蓝宝石衬底（10）的图案化表面上外延生长半导体LED层。 图案化表面改善了光提取。 LED层包括p型层和n型层。 蚀刻LED层以露出n型层。 将一个或多个第一金属层图案化以与p型层和n型层电接触以形成p金属接触（32）和n-金属接触（33）。 电介质聚合物应力缓冲层（36）被旋涂在第一金属层上，以在第一金属层上形成基本平坦的表面。 应力缓冲层具有暴露p金属接触和n-金属接触的开口。 金属焊盘（44,45）形成在应力缓冲层之上，并通过应力缓冲层中的开口与p-金属触点和n-金属触点电接触。 应力缓冲层用作缓冲器以适应焊盘和下层的CTE的差异。

    LASER DE-BOND OF CARRIER WAFER FROM DEVICE WAFER
    4.
    发明申请
    LASER DE-BOND OF CARRIER WAFER FROM DEVICE WAFER 审中-公开
    载体波形从器件波形的激光去耦

    公开(公告)号：WO2014037829A1

    公开(公告)日：2014-03-13

    申请号：PCT/IB2013/056588

    申请日：2013-08-12

    Applicant: KONINKLIJKE PHILIPS N.V.

    Inventor： ZOU, Quanbo ,  AKRAM, Salman ,  BHAT, Jérôme Chandra ,  TRIEU, Minh Ngoc ,  BLANK, Robert

    IPC: H01L25/16 ,  H01L33/00

    CPC classification number: H01L33/0079 ,  H01L21/76894 ,  H01L21/78 ,  H01L24/83 ,  H01L25/167 ,  H01L25/50 ,  H01L2224/81205 ,  H01L2224/83805 ,  H01L2224/8385 ,  H01L2924/0002 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

    Abstract: In one embodiment, a semiconductor device wafer (10) contains electrical components and has electrodes (28) on a first side of the device wafer (10). A transparent carrier wafer (30) is bonded to the first side of the device wafer (10) using a bonding material (32) (e.g., a polymer or metal). The second side of the device wafer (10) is then processed, such as thinned, while the carrier wafer (30) provides mechanical support for the device wafer (10). The carrier wafer (30) is then de-bonded from the device wafer (10) by passing a laser beam (46) through the carrier wafer (30), the carrier wafer (30) being substantially transparent to the wavelength of the beam. The beam impinges on the bonding material (32), which absorbs the beam's energy, to break the chemical bonds between the bonding material (32) and the carrier wafer (30). The released carrier wafer (30) is then removed from the device wafer (10), and the residual bonding material is cleaned from the device wafer (10).

    Abstract translation: 在一个实施例中，半导体器件晶片（10）包含电子部件，并且在器件晶片（10）的第一侧上具有电极（28）。 使用接合材料（32）（例如聚合物或金属）将透明载体晶片（30）结合到器件晶片（10）的第一侧。 然后，当载体晶片（30）为器件晶片（10）提供机械支撑时，器件晶片（10）的第二侧被处理，例如变薄。 然后，通过使激光束（46）穿过载体晶片（30）将载体晶片（30）从器件晶片（10）去结合，载体晶片（30）对于波束的波长基本上是透明的。 光束撞击吸收光束能量的接合材料（32），以破坏接合材料（32）和载体晶片（30）之间的化学键。 然后将释放的载体晶片（30）从器件晶片（10）移除，并且从器件晶片（10）清除残留的接合材料。

    CHIP SCALE LIGHT EMITTING DEVICE PACKAGE WITH DOME
    5.
    发明申请
    CHIP SCALE LIGHT EMITTING DEVICE PACKAGE WITH DOME 审中-公开
    芯片灯泡发光设备包装与DOME

    公开(公告)号：WO2014188296A1

    公开(公告)日：2014-11-27

    申请号：PCT/IB2014/061198

    申请日：2014-05-05

    Applicant: KONINKLIJKE PHILIPS N.V.

    Inventor： AKRAM, Salman ,  BHARDWAJ, Jyoti Kiron

    IPC: H01L33/00 ,  H01L33/48 ,  H01L33/54

    CPC classification number: H01L33/54 ,  H01L33/0079 ,  H01L33/486 ,  H01L33/502 ,  H01L33/60 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0058

    Abstract: Light Emitting Devices (LEDs) are fabricated on a wafer substrate with one or more thick metal layers that provide structural support to each LED. The streets, or lanes, between individual LEDs do not include this metal, and the wafer can be easily sliced/diced into singulated self-supporting LEDs. Because these devices are self-supporting, a separate support submount is not required. Before singulation, further processes may be applied at the wafer-level; after singulation, these self-supporting LEDs may be picked and placed upon an intermediate substrate for further processing as required. In an embodiment of this invention, protective optical domes are formed over the light emitting devices at the wafer-level or while the light emitting devices are situated on the intermediate substrate.

    Abstract translation: 发光器件（LED）在具有一个或多个厚金属层的晶片衬底上制造，所述厚金属层为每个LED提供结构支撑。 单个LED之间的街道或车道不包括该金属，并且可以容易地将晶片切片/切割成单独的自支撑LED。 因为这些设备是自支持的，所以不需要单独的支持子安装。 在分割之前，可以在晶片级应用进一步的工艺; 在分离之后，可以将这些自支撑LED拾取并放置在中间基板上，以便根据需要进一步处理。 在本发明的一个实施例中，保护性光学圆顶形成在晶片级上的发光器件上，或者当发光器件位于中间衬底上时。

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