DEFECT-INDUCED CONTROL OF THE STRUCTURE OF BORON NITRIDE
    3.
    发明申请
    DEFECT-INDUCED CONTROL OF THE STRUCTURE OF BORON NITRIDE 审中-公开
    硼酸盐结构的缺陷诱导控制

    公开(公告)号:WO1992009717A1

    公开(公告)日:1992-06-11

    申请号:PCT/US1991008912

    申请日:1991-11-26

    CPC classification number: C30B29/403 C23C14/0647 C23C16/342 C30B23/002

    Abstract: A method of controlling defects in boron nitride films in order to stabilize certain crystallographic structures is disclosed. Such defects include, for example, nitrogen vacancies, boron interstitials, and substitutional dopants. In particular, films produced by the method of sputtering in pure inert gas atmospheres have a tetrahedrally coordinated structure and are rich in nitrogen vacancies. Films produced by the same method in inert gas with a sufficient nitrogen overpressure have a completely stoichiometric graphitic structure. These results are expected for any defect type having a greater free energy of formation in the graphitic form of boron nitride than in the tetrahedral forms. The methods of the invention are applicable to any film growth technique capable of incorporating such defects.

    Abstract translation: 公开了一种控制氮化硼膜缺陷的方法,以稳定某些晶体结构。 这些缺陷包括例如氮空位,硼间隙和替代掺杂剂。 特别地,通过溅射在纯惰性气体气氛中的方法生产的膜具有四面体配位结构并且富含氮空位。 通过相同方法在具有足够的氮气超压的惰性气体中制备的膜具有完全化学计量的石墨结构。 对于具有比在四面体形式中的氮化硼的石墨形式的更大的自由形成能量的任何缺陷类型,预期这些结果。 本发明的方法适用于能够引入这种缺陷的任何成膜技术。

    COATED SUBSTRATE
    5.
    发明申请
    COATED SUBSTRATE 审中-公开
    涂层基材

    公开(公告)号:WO2016178003A1

    公开(公告)日:2016-11-10

    申请号:PCT/GB2016/051242

    申请日:2016-04-29

    CPC classification number: C23C14/0623 C23C14/0647

    Abstract: The invention to which this application relates is improvements to the provision of Molybdenum and/or Tungsten containing coatings of the type which can be used to improve certain characteristics of the surface of a substrate to which the coating is applied. In one embodiment the coating also includes Ti to provide the advantages of high adhesion, high humidity and wear resistance of the coating and TiB 2 to promote the formation of a relatively uniform, dense, coating, so strengthening the coating which is formed and improving the high temperature performance of the coatings.

    Abstract translation: 本申请涉及的发明是提供可用于改善施加涂层的基底的表面的某些特性的钼和/或钨含量涂层的改进。 在一个实施方案中,涂层还包括Ti,以提供涂层和TiB 2的高粘附性,高湿度和耐磨性的优点,以促进形成相对均匀的致密涂层,从而加强形成的涂层并提高高 涂层的温度性能。

    ALCRN-BASED COATING PROVIDING ENHANCED CRATER WEAR RESISTANCE
    6.
    发明申请
    ALCRN-BASED COATING PROVIDING ENHANCED CRATER WEAR RESISTANCE 审中-公开
    基于ALCRN的涂料提供增强的耐磨性

    公开(公告)号:WO2016102170A1

    公开(公告)日:2016-06-30

    申请号:PCT/EP2015/078553

    申请日:2015-12-03

    Abstract: Coating (210) deposited on a surface of a substrate (201) comprising a multi-layered film (216) consisting of a plurality of A-layers and a plurality of B-layers deposited alternating one on each other forming a A/B/A/B/A... architecture, the A-layers comprising aluminium chromium boron nitride and the B-layers comprising aluminium chromium nitride and not comprising boron, whereas the multi-layered film (216) comprises at least a first portion (216a) and a last portion (216c), wherein the average boron content in the first coating portion (216a) is higher than the average boron content in the last coating portion (216c), and both the first coating portion (216a) and the last coating portion (216c) exhibit inherent compressive stresses and wherein the inherent compressive stress in the first coating portion (216a) is lower than it in the last coating portion (216c).

    Abstract translation: 沉积在基板(201)的表面上的涂层(210),包括由多个A层组成的多层膜(216)和彼此交替沉积的多个B层形成A / B / A / B / A结构,包括铝铬氮化硼的A层和包含氮化铝的B层,不包含硼,而多层膜(216)至少包括第一部分(216a) )和最后部分(216c),其中第一涂覆部分(216a)中的平均硼含量高于最后涂布部分(216c)中的平均硼含量,并且第一涂布部分(216a)和最后涂布部分 涂覆部分(216c)表现出固有的压缩应力,并且其中第一涂覆部分(216a)中的固有压缩应力低于最后涂布部分(216c)中的固有压缩应力。

    METHOD FOR DEPOSITION OF AN ANTI-SCRATCH COATING
    8.
    发明申请
    METHOD FOR DEPOSITION OF AN ANTI-SCRATCH COATING 审中-公开
    沉积抗划痕涂层的方法

    公开(公告)号:WO2007015023A3

    公开(公告)日:2007-03-22

    申请号:PCT/FR2006050750

    申请日:2006-07-26

    Abstract: The invention relates to a method for vacuum deposition of at least one thin layer made from boron on a substrate, characterised in that at least one type of atomisation either chemically inactive or active with regard to boron is/are selected, a collimated ion beam is generated by means of at least one linear ion source positioned in an industrial scale unit said beam mainly comprising the atomisation species, the beam is directed towards at least one target made from boron, at least one surface section of said substrate is placed facing the target such that the material atomised by the ion bombardment of the target or a material resulting from the reaction of said atomised material with at least one of the atomising species is deposited on said surface section.

    Abstract translation: 本发明涉及一种用于在衬底上真空沉积由硼制成的至少一个薄层的方法,其特征在于,选择化学惰性或关于硼活性的至少一种类型的雾化,准直离子束是 其通过位于工业规模单元中的至少一个线性离子源产生,所述束主要包括雾化物质,所述束被引导至由硼制成的至少一个靶,所述衬底的至少一个表面部分被放置成面对所述靶 使得通过靶的离子轰击而雾化的材料或由所述雾化材料与至少一种雾化物质反应所产生的材料沉积在所述表面部分上。

    RECTANGULAR FILTERED VAPOR PLASMA SOURCE AND METHOD OF CONTROLLING VAPOR PLASMA FLOW
    10.
    发明申请
    RECTANGULAR FILTERED VAPOR PLASMA SOURCE AND METHOD OF CONTROLLING VAPOR PLASMA FLOW 审中-公开
    正交过滤蒸汽等离子体源和控制蒸汽等离子体流的方法

    公开(公告)号:WO2005040451A1

    公开(公告)日:2005-05-06

    申请号:PCT/US2004/030603

    申请日:2004-09-17

    Abstract: The invention provides an arc coating apparatus having a steering magnetic field source comprising steering conductors (62, 64, 66, 68) disposed along the short sides (32c, 32d) of a rectangular target (32) behind the target, and a magnetic focusing system disposed along the long sides (32a, 32b) of the target (32) in front of the target which confines the flow of plasma between magnetic fields generated on opposite long sides (32a, 32b) of the target (32). The plasma focusing system can be used to deflect the plasma flow off of the working axis of the cathode. Each steering conductor (62, 64, 66, 68) can be controlled independently. In a further embodiment, electrically independent steering conductors (62, 64, 66, 68) are disposed along opposite long sides (32a, 32b) of the cathode plate (32), and by selectively varying a current through one conductor, the path of the arc spot shifts to widen the erosion corridor. The invention also provides a plurality of internal anodes, and optionally a surrounding anode for deflecting the plasma flow.

    Abstract translation: 本发明提供了一种具有转向磁场源的电弧涂覆装置,该转向磁场源包括沿靶材后面的矩形靶材(32)的短边(32c,32d)设置的转向导体(62,64,66,68) 所述系统沿着所述目标(32)前方的所述目标(32)的长边(32a,32b)设置在所述目标(32)的相对的长边(32a,32b)上产生的磁场之间限制所述等离子体的流动。 等离子体聚焦系统可用于使等离子体流离开阴极的工作轴线。 每个转向导体(62,64,66,68)可以独立地控制。 在另一个实施例中,电独立的导向导体(62,64,66,68)沿着阴极板(32)的相对的长边(32a,32b)设置,并且通过选择性地改变通过一个导体的电流, 弧线转移以扩大侵蚀走廊。 本发明还提供多个内部阳极,以及可选地用于偏转等离子体流的周围阳极。

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