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公开(公告)号:CN102789966A
公开(公告)日:2012-11-21
申请号:CN201210157001.8
申请日:2012-05-18
申请人: 英飞凌科技股份有限公司
发明人: 哈利勒·哈希尼 , 汉斯-约阿希姆·舒尔茨
CPC分类号: C23C4/005 , C23C4/01 , C23C4/08 , C23C4/134 , H01L21/76898 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/48 , H01L24/741 , H01L24/743 , H01L24/83 , H01L24/85 , H01L2224/03332 , H01L2224/03442 , H01L2224/04026 , H01L2224/04042 , H01L2224/05824 , H01L2224/05847 , H01L2224/05939 , H01L2224/05944 , H01L2224/05966 , H01L2224/05979 , H01L2224/0598 , H01L2224/05981 , H01L2224/0603 , H01L2224/27442 , H01L2224/29082 , H01L2224/292 , H01L2224/29324 , H01L2224/29347 , H01L2224/29439 , H01L2224/29444 , H01L2224/29466 , H01L2224/29479 , H01L2224/2948 , H01L2224/29481 , H01L2224/32245 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/73265 , H01L2224/83191 , H01L2224/83801 , H01L2224/8382 , H01L2224/85 , H01L2224/85181 , H01L2224/85205 , H01L2224/85207 , H01L2224/85801 , H01L2924/00011 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2224/48 , H01L2224/45099 , H01L2224/83205 , H01L2924/00012
摘要: 本发明涉及用于在基板上制造金属层的方法和器件。具体地,本发明提供了一种在半导体基板上制造金属层的方法。通过沉积金属颗粒在半导体基板上制造金属层。该金属颗粒包括由第一金属材料制成的核和包围该核的壳。该壳由抗氧化的第二金属材料制成。本发明还涉及一种用于制造半导体基板中的通孔的方法以及制造半导体芯片的方法。本发明还涉及一种半导体器件,其包括包含第一电极的半导体芯片;和施加于该半导体芯片的第一电极的金属颗粒。