-
公开(公告)号：CN100578778C
公开(公告)日：2010-01-06
申请号：CN200610095821.3
申请日：2001-12-19
申请人： 株式会社日立制作所
CPC分类号： H01L24/01 , B23K3/063 , B23K2101/40 , H01L24/27 , H01L24/29 , H01L24/33 , H01L24/73 , H01L24/75 , H01L24/83 , H01L2224/0401 , H01L2224/04026 , H01L2224/16225 , H01L2224/29 , H01L2224/29076 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/292 , H01L2224/29211 , H01L2224/29311 , H01L2224/29347 , H01L2224/29499 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/83101 , H01L2224/8319 , H01L2224/83801 , H01L2924/00011 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/13091 , H01L2924/15311 , H01L2924/15724 , H01L2924/15747 , H01L2924/15787 , H01L2924/1579 , H01L2924/16152 , H01L2924/166 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H05K3/3478 , H05K2201/0215 , H05K2203/0143 , H05K2203/0278 , H05K2203/0405 , H05K2203/0425 , Y10T428/12528 , Y10T428/12708 , Y10T428/12903 , H01L2924/00014 , H01L2924/05432 , H01L2924/00 , H01L2924/01007 , H01L2924/01031 , H01L2924/01022 , H01L2924/01026 , H01L2924/01049 , H01L2924/01083 , H01L2924/00012 , H01L2924/3512 , H01L2224/13111 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/29298
摘要： 将含有作为金属颗粒的Cu等颗粒和作为焊锡颗粒的Sn颗粒的焊锡材料压延而形成的箔适用于温度分层焊接中的高温侧的锡焊，用这种锡焊方法获得的半导体器件、电子器件在机械特性等方面具有优良的可靠性。
-
公开(公告)号：CN1482956A
公开(公告)日：2004-03-17
申请号：CN01821243.3
申请日：2001-12-19
申请人： 株式会社日立制作所
CPC分类号： H01L24/01 , B23K3/063 , B23K2101/40 , H01L24/27 , H01L24/29 , H01L24/33 , H01L24/73 , H01L24/75 , H01L24/83 , H01L2224/0401 , H01L2224/04026 , H01L2224/16225 , H01L2224/29 , H01L2224/29076 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/292 , H01L2224/29211 , H01L2224/29311 , H01L2224/29347 , H01L2224/29499 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/83101 , H01L2224/8319 , H01L2224/83801 , H01L2924/00011 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/13091 , H01L2924/15311 , H01L2924/15724 , H01L2924/15747 , H01L2924/15787 , H01L2924/1579 , H01L2924/16152 , H01L2924/166 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H05K3/3478 , H05K2201/0215 , H05K2203/0143 , H05K2203/0278 , H05K2203/0405 , H05K2203/0425 , Y10T428/12528 , Y10T428/12708 , Y10T428/12903 , H01L2924/00014 , H01L2924/05432 , H01L2924/00 , H01L2924/01007 , H01L2924/01031 , H01L2924/01022 , H01L2924/01026 , H01L2924/01049 , H01L2924/01083 , H01L2924/00012 , H01L2924/3512 , H01L2224/13111 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/29298
摘要： 将含有作为金属颗粒的Cu等颗粒和作为焊锡颗粒的Sn颗粒的焊锡材料压延而形成的箔适用于温度分层焊接中的高温侧的锡焊，用这种锡焊方法获得的半导体器件、电子器件在机械特性等方面具有优良的可靠性。
-
公开(公告)号：CN102789966A
公开(公告)日：2012-11-21
申请号：CN201210157001.8
申请日：2012-05-18
申请人： 英飞凌科技股份有限公司
发明人： 哈利勒·哈希尼 , 汉斯-约阿希姆·舒尔茨
CPC分类号： C23C4/005 , C23C4/01 , C23C4/08 , C23C4/134 , H01L21/76898 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/48 , H01L24/741 , H01L24/743 , H01L24/83 , H01L24/85 , H01L2224/03332 , H01L2224/03442 , H01L2224/04026 , H01L2224/04042 , H01L2224/05824 , H01L2224/05847 , H01L2224/05939 , H01L2224/05944 , H01L2224/05966 , H01L2224/05979 , H01L2224/0598 , H01L2224/05981 , H01L2224/0603 , H01L2224/27442 , H01L2224/29082 , H01L2224/292 , H01L2224/29324 , H01L2224/29347 , H01L2224/29439 , H01L2224/29444 , H01L2224/29466 , H01L2224/29479 , H01L2224/2948 , H01L2224/29481 , H01L2224/32245 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/73265 , H01L2224/83191 , H01L2224/83801 , H01L2224/8382 , H01L2224/85 , H01L2224/85181 , H01L2224/85205 , H01L2224/85207 , H01L2224/85801 , H01L2924/00011 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2224/48 , H01L2224/45099 , H01L2224/83205 , H01L2924/00012
摘要： 本发明涉及用于在基板上制造金属层的方法和器件。具体地，本发明提供了一种在半导体基板上制造金属层的方法。通过沉积金属颗粒在半导体基板上制造金属层。该金属颗粒包括由第一金属材料制成的核和包围该核的壳。该壳由抗氧化的第二金属材料制成。本发明还涉及一种用于制造半导体基板中的通孔的方法以及制造半导体芯片的方法。本发明还涉及一种半导体器件，其包括包含第一电极的半导体芯片；和施加于该半导体芯片的第一电极的金属颗粒。
-
公开(公告)号：CN1612331A
公开(公告)日：2005-05-04
申请号：CN200410087755.6
申请日：2004-10-29
申请人： 株式会社电装
IPC分类号： H01L23/36 , H01L23/488
CPC分类号： H01L23/42 , H01L23/36 , H01L23/492 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/26175 , H01L2224/27013 , H01L2224/291 , H01L2224/2919 , H01L2224/292 , H01L2224/29298 , H01L2224/32057 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83051 , H01L2224/83101 , H01L2224/83136 , H01L2224/83385 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： 一种半导体器件，包括：半导体芯片(10)；第一金属板(20)，通过第一焊料层(51)布置在芯片(10)的一侧上；第二金属板(40)，通过第二焊料层(52)布置在芯片(10)的另一侧上；第三金属板(30)，通过第三焊料层(53)布置在第二金属板(40)上；支撑装置(80、85、87)，用于保持芯片(10)与第一金属板(20)之间距离和芯片(10)与第二金属板(40)之间距离中的至少一个；以及多余焊料容纳装置(90)，用于在第三焊料层(53)包括多余焊料时容纳多余焊料。
-
公开(公告)号：CN105575928B
公开(公告)日：2018-12-11
申请号：CN201510708562.6
申请日：2015-10-27
申请人： 丰田自动车株式会社
发明人： 门口卓矢
IPC分类号： H01L23/485 , H01L21/60
CPC分类号： H01L24/32 , H01L21/4853 , H01L23/4334 , H01L23/488 , H01L23/4924 , H01L23/49537 , H01L23/49582 , H01L24/05 , H01L24/29 , H01L24/33 , H01L24/83 , H01L2224/04026 , H01L2224/05655 , H01L2224/292 , H01L2224/29211 , H01L2224/29347 , H01L2224/32245 , H01L2224/32503 , H01L2224/32505 , H01L2224/33181 , H01L2224/83455 , H01L2224/8381 , H01L2224/83815 , H01L2924/181 , H01L2924/00014 , H01L2924/014 , H01L2924/01029 , H01L2924/01028 , H01L2924/01015 , H01L2924/01083 , H01L2924/01051 , H01L2924/01047
摘要： 一种半导体装置，包括：半导体元件；被接合构件，其被接合到半导体元件并且包括镍膜；以及接合层，其被接合至所述被接合构件并且包含2.0wt％或以上的铜，其中接合层包括焊料部分和Cu6Sn5部分，焊料部分的基体金属至少包含作为构成元素的锡并且包含单质的铜，并且Cu6Sn5部分与镍膜接触。
-
公开(公告)号：CN104112677A
公开(公告)日：2014-10-22
申请号：CN201410150243.3
申请日：2014-04-15
申请人： 富士电机株式会社
IPC分类号： H01L21/52
CPC分类号： H01L24/75 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/92 , H01L2224/26175 , H01L2224/29007 , H01L2224/291 , H01L2224/29111 , H01L2224/292 , H01L2224/29299 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2224/75303 , H01L2224/7531 , H01L2224/75705 , H01L2224/83065 , H01L2224/83101 , H01L2224/83209 , H01L2224/83385 , H01L2224/83815 , H01L2224/92247 , H01L2924/00014 , H01L2924/12042 , H01L2924/13055 , H01L2924/3511 , H01L2924/01051 , H01L2924/014 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： 本发明提供一种半导体装置的制造方法以及用于该制造方法的焊接用压块,其在制造功率半导体模块的焊接工序中，抑制在接合面的熔融焊锡中产生厚度不均及空隙，并且即使在焊接构件上配置有布线等上部结构物，上部结构物与焊接用压块也互不干扰而使稳定的焊接成为可能。在因基材的翘曲而在基材接合面上出现高度差时，重心从压块主体的中心偏移，使用只在压块主体的与焊接物面对的一侧的边缘部配置有腿的焊接用压块，在基材主面的预定范围的边缘部中因翘曲而高度相对变低的一侧的边缘部配置阻隔材料，并且以使重心位于因翘曲而高度相对变低的一侧的方式将压块载置于焊接物上，然后实施使焊锡熔融的升温处理。
-
公开(公告)号：CN1873971A
公开(公告)日：2006-12-06
申请号：CN200610095821.3
申请日：2001-12-19
申请人： 株式会社日立制作所
CPC分类号： H01L24/01 , B23K3/063 , B23K2101/40 , H01L24/27 , H01L24/29 , H01L24/33 , H01L24/73 , H01L24/75 , H01L24/83 , H01L2224/0401 , H01L2224/04026 , H01L2224/16225 , H01L2224/29 , H01L2224/29076 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/292 , H01L2224/29211 , H01L2224/29311 , H01L2224/29347 , H01L2224/29499 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/83101 , H01L2224/8319 , H01L2224/83801 , H01L2924/00011 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/13091 , H01L2924/15311 , H01L2924/15724 , H01L2924/15747 , H01L2924/15787 , H01L2924/1579 , H01L2924/16152 , H01L2924/166 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H05K3/3478 , H05K2201/0215 , H05K2203/0143 , H05K2203/0278 , H05K2203/0405 , H05K2203/0425 , Y10T428/12528 , Y10T428/12708 , Y10T428/12903 , H01L2924/00014 , H01L2924/05432 , H01L2924/00 , H01L2924/01007 , H01L2924/01031 , H01L2924/01022 , H01L2924/01026 , H01L2924/01049 , H01L2924/01083 , H01L2924/00012 , H01L2924/3512 , H01L2224/13111 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/29298
摘要： 将含有作为金属颗粒的Cu等颗粒和作为焊锡颗粒的Sn颗粒的焊锡材料压延而形成的箔适用于温度分层焊接中的高温侧的锡焊，用这种锡焊方法获得的半导体器件、电子器件在机械特性等方面具有优良的可靠性。
-
公开(公告)号：CN105575928A
公开(公告)日：2016-05-11
申请号：CN201510708562.6
申请日：2015-10-27
申请人： 丰田自动车株式会社
发明人： 门口卓矢
IPC分类号： H01L23/485 , H01L21/60
CPC分类号： H01L24/32 , H01L21/4853 , H01L23/4334 , H01L23/488 , H01L23/4924 , H01L23/49537 , H01L23/49582 , H01L24/05 , H01L24/29 , H01L24/33 , H01L24/83 , H01L2224/04026 , H01L2224/05655 , H01L2224/292 , H01L2224/29211 , H01L2224/29347 , H01L2224/32245 , H01L2224/32503 , H01L2224/32505 , H01L2224/33181 , H01L2224/83455 , H01L2224/8381 , H01L2224/83815 , H01L2924/181 , H01L2924/00014 , H01L2924/014 , H01L2924/01029 , H01L2924/01028 , H01L2924/01015 , H01L2924/01083 , H01L2924/01051 , H01L2924/01047 , H01L24/27 , H01L2224/27 , H01L2924/0105
摘要： 一种半导体装置，包括：半导体元件；被接合构件，其被接合到半导体元件并且包括镍膜；以及接合层，其被接合至所述被接合构件并且包含2.0wt％或以上的铜，其中接合层包括焊料部分和Cu6Sn5部分，焊料部分的基体金属至少包含作为构成元素的锡并且包含单质的铜，并且Cu6Sn5部分与镍膜接触。
-
公开(公告)号：CN100343987C
公开(公告)日：2007-10-17
申请号：CN200410087755.6
申请日：2004-10-29
申请人： 株式会社电装
IPC分类号： H01L23/36 , H01L23/488
CPC分类号： H01L23/42 , H01L23/36 , H01L23/492 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/26175 , H01L2224/27013 , H01L2224/291 , H01L2224/2919 , H01L2224/292 , H01L2224/29298 , H01L2224/32057 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83051 , H01L2224/83101 , H01L2224/83136 , H01L2224/83385 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： 一种半导体器件，包括：半导体芯片(10)；第一金属板(20)，通过第一焊料层(51)布置在芯片(10)的一侧上；第二金属板(40)，通过第二焊料层(52)布置在芯片(10)的另一侧上；第三金属板(30)，通过第三焊料层(53)布置在第二金属板(40)上；支撑装置(80、85、87)，用于保持芯片(10)与第一金属板(20)之间距离和芯片(10)与第二金属板(40)之间距离中的至少一个；以及多余焊料容纳装置(90)，用于在第三焊料层(53)包括多余焊料时容纳多余焊料，其中多余焊料容纳装置(90)为凹槽(90)，所述凹槽(90)被布置在和第二金属板(40)的外部周围对应的一部分第三金属板(30)上。
-
公开(公告)号：CN1269612C
公开(公告)日：2006-08-16
申请号：CN01821243.3
申请日：2001-12-19
申请人： 株式会社日立制作所
CPC分类号： H01L24/01 , B23K3/063 , B23K2101/40 , H01L24/27 , H01L24/29 , H01L24/33 , H01L24/73 , H01L24/75 , H01L24/83 , H01L2224/0401 , H01L2224/04026 , H01L2224/16225 , H01L2224/29 , H01L2224/29076 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/292 , H01L2224/29211 , H01L2224/29311 , H01L2224/29347 , H01L2224/29499 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/83101 , H01L2224/8319 , H01L2224/83801 , H01L2924/00011 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/13091 , H01L2924/15311 , H01L2924/15724 , H01L2924/15747 , H01L2924/15787 , H01L2924/1579 , H01L2924/16152 , H01L2924/166 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H05K3/3478 , H05K2201/0215 , H05K2203/0143 , H05K2203/0278 , H05K2203/0405 , H05K2203/0425 , Y10T428/12528 , Y10T428/12708 , Y10T428/12903 , H01L2924/00014 , H01L2924/05432 , H01L2924/00 , H01L2924/01007 , H01L2924/01031 , H01L2924/01022 , H01L2924/01026 , H01L2924/01049 , H01L2924/01083 , H01L2924/00012 , H01L2924/3512 , H01L2224/13111 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/29298
摘要： 将含有作为金属颗粒的Cu等颗粒和作为焊锡颗粒的Sn颗粒的焊锡材料压延而形成的箔适用于温度分层焊接中的高温侧的锡焊，用这种锡焊方法获得的半导体器件、电子器件在机械特性等方面具有优良的可靠性。
-
-
-
-
-
-
-
-
-
搜索结果
10 条记录 (耗时 0.014 秒)
