摘要:
The invention describes a laser capable of continuous wave operation at visible wavelengths. A diode laser lasing in the 340 to 640 nm wavelength range is used to pump a suitably doped solid state material within an optical cavity, which then emits visible light. Suitable solid state materials include ionic solids which are doped with rare earth ions. The solid state laser may be end-pumped or side-pumped.
摘要:
The present invention is related to a Programmable Acquisition Module for the acquisition of synchronisation signals in a spread-spectrum communication system, comprising
a matched filter with programmable length (1) accumulator with RAM (3), using input either directly from said matched filter or via the first energy calculation block hardware synchronisation counter (7) that supports the SW such that the HW acquisition process can be started at precise defined moments a dwell counter (8) an address generator (4) all arranged for control or programming by a software controller,
a first energy calculation block (2) a second energy calculation block (5) to calculate the energy of the accumulated values a maximum finder block (6) to find the maximum energy value of the accumulated values, whereby the accumulator (3), connected with the matched filter (1) both directly and via the energy calculation block (2), is arranged for getting inputs from the address generator and the software controller, characterised in that the module is configurable for the acquisition of
codes with a length up to the matched filter's maximum length with non-coherent dwell, codes with a length up to the matched filter's maximum length with coherent dwell, and codes with a length larger than the matched filter's maximum length.
摘要:
A fabrication and adhesion method for a polyaryl-ether-ketone (PAEK) device, such as a microfluidic device (400), is disclosed. At least one glassy uncrystallized PAEK substrate (250) is heated up to near or above the glass transition temperature to allow the substrate (250) to crystallize from the glass state, while embossing the substrate (250) with patterns (325). Bonding the PAEK substrate (250) to another substrate (255) is accomplished using a solvent-resistant adhesive (270), such as a polyimide-based adhesive, in combination with an adhesion enhancement treatment. In certain embodiments, the adhesion enhancement treatment is a plasma treatment or a chemical sulfonation treatment.
摘要:
The power of a digital signal such as an optical data stream is set via digital-to-analog converter (12) having a reference input (12a) for connection to a DC reference signal (14). The pilot tone is injected into the reference input (12a) of the digital-to-analog converter. In the place of a dual amplitude control (modulation current and pilot tone), the arrangement of the invention only requires a single control, thereby reducing cost, power consumption, microcontroller input/output activity, area occupation (PCB real estate) and failure rate.
摘要:
Systems and methods of manufacturing etchable heterojunction interfaces and etched heterojunction structures are described. A bottom layer (14) is deposited on a substrate (16), a transition etch layer (20) is deposited over the bottom layer (14), and a top layer (12) is deposited over the transition etch layer (20). The transition etch layer (20) substantially prevents the bottom layer (14) and the top layer (12) from forming a material characterized by a composition substantially different than the bottom layer (14) and a substantially non-selective etchability with respect to the bottom layer (14). By tailoring the structure of the heterojunction interface to respond to heterojunction etching processes with greater predictability and control, the transition etch layer (20) enhances the robustness of previously unreliable heterojunction device manufacturing processes. The transition etch layer (20) enables one or more vias (72) to be etched down to the top surface of the bottom layer (14) in a reliable and repeatable manner. In particular, because the transition etch layer (20) enables use of an etchant that is substantially selective with respect to the bottom layer (14), the thickness of critical device layers may be determined by the precise epitaxial growth processes used to form the bottom layer (14) rather than relatively imprecise non-selective etch processes.
摘要:
A microcap wafer-level package [10] is provided in which a micro device [14] is connected to bonding pads [16, 18] on a base wafer [12]. A peripheral pad [20] on the base wafer [12] encompasses the bonding pads [16, 18] and the micro device [14]. A cap wafer [24] is processed to form wells [40, 42] of a predetermined depth in the cap wafer [24]. A conductive material [27, 29] is made integral with the walls [46, 47] of the wells [40, 42] in the cap wafer [24]. The cap wafer [24] has contacts [30,32] and a peripheral gasket [22] formed thereon where the contacts [30,32] are capable of being aligned with the bonding pads [16, 18] on the base wafer [12], and the gasket [22] matches the peripheral pad [20] on the base wafer [12]. The cap wafer [24] is then placed over the base wafer [12] so as to bond the contacts [30, 32] and gasket [22] to the pads [16, 18, 20] and form a hermetically sealed volume [25] within the peripheral gasket [22]. The cap wafer [24] is thinned to form a "microcap" [24]. The microcap [24] is thinned below the predetermined depth until the conductive material [27, 29] is exposed to become conductive vias [26, 28] through the cap wafer [24] to outside the hermetically sealed volume [25].