公开(公告)号：EP1199744A1

公开(公告)日：2002-04-24

申请号：EP00122781.8

申请日：2000-10-19

申请人： Agilent Technologies, Inc. (a Delaware corporation)

发明人： Ruby, Richard C. ,  Bell, Tracy E. ,  Geefay, Frank S. ,  Desai, Yogesh M.

IPC分类号： H01L21/50 ,  H01L23/10

CPC分类号： H01L24/05 ,  H01L21/50 ,  H01L23/04 ,  H01L23/10 ,  H01L23/481 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05109 ,  H01L2224/05138 ,  H01L2224/05599 ,  H01L2224/05609 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/48463 ,  H01L2224/85409 ,  H01L2224/85424 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2224/45099 ,  H01L2924/00

摘要： A microcap wafer-level package [10] is provided in which a micro device [14] is connected to bonding pads [16, 18] on a base wafer [12]. A peripheral pad [20] on the base wafer [12] encompasses the bonding pads [16, 18] and the micro device [14]]. A cap wafer [24] has gaskets [22, 34, 36] formed thereon using a thick photoresist semiconductor photolithographic process. Bonding pad gaskets [34, 36] match the perimeters of the bonding pads and a peripheral pad gasket [22] matches the peripheral pad [20] on the base wafer [12]. Wells [56, 58] are located inside the perimeters of the bond pad gaskets [34, 36] and are formed to a predetermined depth in the cap wafer [24]. The cap wafer [24] is then placed over the base wafer [12] to cold weld bond the gaskets [22, 34, 36] to the pads [20, 16, 18] and form a hermetically sealed volume [25] between the bonding pad gaskets [34, 36] and the peripheral pad gasket [22]. The cap wafer [24] is then thinned below the predetermined depth until the wells [56, 58] become through holes [26, 28 ] that provide access to the bonding pads [16, 18] inside the package [10], but outside the hermetically sealed volume [25], for connecting wires [30, 32] from a micro device [14] utilizing system.

摘要翻译： 提供了一种微型晶圆级封装件，其中微型器件Ä14Ü连接到基底晶片Ä12Ü上的焊盘Ä16,18Ü。 基底晶片Ä12Ü上的外围垫片Ä20Ü包括接合垫Ä16,18Ü和微型器件Ä14ÜÜ。 盖片Ä24Ü使用厚的光致抗蚀剂半导体光刻工艺在其上形成垫圈Ä22,34,36u。 粘合垫垫Ä34,36u与焊盘的周长相匹配，外围垫片垫圈Ä22Ü与基片Ä12Ü上的外围垫片Ä20Ü相匹配。 井Ä56,58Ü位于粘结垫垫圈Ä34,36Ü的周边内，并且形成在盖晶片Ä24Ü中的预定深度。 然后将盖晶片Ä24Ü放置在基底晶片Ä12Ü上，将垫圈Ä22,34,36Ü冷焊接到焊盘Ä20,16,1818，并在焊盘垫片Ä34,36Ü和外围焊盘之间形成密封的体积Ä25Ü 垫圈Ä22Ü。 然后将盖晶片Ä24Ü在预定深度之下变薄，直到孔Ä56,58Ü变得通过孔Ä26,28Ü，其提供对包装Ä10Ü内部的接合焊盘Ä16,18U的访问，但是在密封体积Ä25Ü之外，用于连接线 Ä30，32Ü从微型设备Ä14Ü利用系统。

公开(公告)号：EP1573811A4

公开(公告)日：2010-01-06

申请号：EP03814225

申请日：2003-12-19

申请人： ADVANCED ANALOGIC TECH INC ,  ADVANCED ANALOGIC TECH INC

发明人： WILLIAMS RICHARD ,  CORNELL MICHAEL ,  CHAN WAI TIEN

IPC分类号： H01L23/62 ,  H01L23/485 ,  H01L23/495 ,  H01L23/58 ,  H01L23/60 ,  H01L27/02 ,  H01L29/78

CPC分类号： H01L23/60 ,  H01L22/32 ,  H01L23/49562 ,  H01L23/62 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0266 ,  H01L29/7802 ,  H01L29/7813 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05138 ,  H01L2224/05552 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48464 ,  H01L2224/49111 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  Y10S257/904 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor die has a bonding pad for a MOSFET such as a power MOSFET and a separate bonding pad for ESD protection circuitry. Connecting the bonding pads together makes the ESD protection circuitry functional to protect the MOSFET. Before connecting the bonding pads together, the ESD protection circuitry and/or the MOSFET can be separately tested. A voltage higher than functioning ESD protection circuitry would permit can be used when testing the MOSFET. A packaging process such as wire bonding or attaching the die to a substrate in a flip-chip package can connect the bonding pads after testing.

公开(公告)号：EP1071126A3

公开(公告)日：2004-07-07

申请号：EP00113697.7

申请日：2000-06-28

申请人： Agilent Technologies, Inc. (a Delaware corporation)

发明人： Ruby, Richard C. ,  Bell, Tracy E. ,  Geefay, Frank S. ,  Desai, Yogesh M.

IPC分类号： H01L21/48 ,  H01L21/768 ,  H01L23/498 ,  H01L23/055 ,  H01L23/10

CPC分类号： B81B7/007 ,  H01L23/04 ,  H01L23/055 ,  H01L23/10 ,  H01L23/481 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05093 ,  H01L2224/05096 ,  H01L2224/05109 ,  H01L2224/05138 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/48463 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2224/45099 ,  H01L2924/00

摘要： A microcap wafer-level package [10] is provided in which a micro device [14] is connected to bonding pads [16, 18] on a base wafer [12]. A peripheral pad [20] on the base wafer [12] encompasses the bonding pads [16, 18] and the micro device [14]. A cap wafer [24] is processed to form wells [40, 42] of a predetermined depth in the cap wafer [24]. A conductive material [27, 29] is made integral with the walls [46, 47] of the wells [40, 42] in the cap wafer [24]. The cap wafer [24] has contacts [30,32] and a peripheral gasket [22] formed thereon where the contacts [30,32] are capable of being aligned with the bonding pads [16, 18] on the base wafer [12], and the gasket [22] matches the peripheral pad [20] on the base wafer [12]. The cap wafer [24] is then placed over the base wafer [12] so as to bond the contacts [30, 32] and gasket [22] to the pads [16, 18, 20] and form a hermetically sealed volume [25] within the peripheral gasket [22]. The cap wafer [24] is thinned to form a "microcap" [24]. The microcap [24] is thinned below the predetermined depth until the conductive material [27, 29] is exposed to become conductive vias [26, 28] through the cap wafer [24] to outside the hermetically sealed volume [25].

公开(公告)号：EP1071126A2

公开(公告)日：2001-01-24

申请号：EP00113697.7

申请日：2000-06-28

申请人： Agilent Technologies Inc

发明人： Ruby, Richard C. ,  Bell, Tracy E. ,  Geefay, Frank S. ,  Desai, Yogesh M.

IPC分类号： H01L21/48 ,  H01L21/768 ,  H01L23/498 ,  H01L23/055 ,  H01L23/10

CPC分类号： B81B7/007 ,  H01L23/04 ,  H01L23/055 ,  H01L23/10 ,  H01L23/481 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05093 ,  H01L2224/05096 ,  H01L2224/05109 ,  H01L2224/05138 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/48463 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2224/45099 ,  H01L2924/00

摘要： A microcap wafer-level package [10] is provided in which a micro device [14] is connected to bonding pads [16, 18] on a base wafer [12]. A peripheral pad [20] on the base wafer [12] encompasses the bonding pads [16, 18] and the micro device [14]. A cap wafer [24] is processed to form wells [40, 42] of a predetermined depth in the cap wafer [24]. A conductive material [27, 29] is made integral with the walls [46, 47] of the wells [40, 42] in the cap wafer [24]. The cap wafer [24] has contacts [30,32] and a peripheral gasket [22] formed thereon where the contacts [30,32] are capable of being aligned with the bonding pads [16, 18] on the base wafer [12], and the gasket [22] matches the peripheral pad [20] on the base wafer [12]. The cap wafer [24] is then placed over the base wafer [12] so as to bond the contacts [30, 32] and gasket [22] to the pads [16, 18, 20] and form a hermetically sealed volume [25] within the peripheral gasket [22]. The cap wafer [24] is thinned to form a "microcap" [24]. The microcap [24] is thinned below the predetermined depth until the conductive material [27, 29] is exposed to become conductive vias [26, 28] through the cap wafer [24] to outside the hermetically sealed volume [25].

公开(公告)号：EP2594928B1

公开(公告)日：2016-04-27

申请号：EP12007744.1

申请日：2012-11-15

申请人： Micronas GmbH

发明人： Wilbertz, Christoph ,  Kolleth, Tobias ,  Frerichs, Heinz-Peter

IPC分类号： G01N27/414 ,  H01L23/485 ,  H01L21/56 ,  H01L25/00 ,  H01L23/482

CPC分类号： H01L29/66 ,  G01N27/4143 ,  G01N27/4148 ,  H01L23/3171 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05017 ,  H01L2224/05138 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05578 ,  H01L2224/05582 ,  H01L2224/05638 ,  H01L2224/05684 ,  H01L2224/05686 ,  H01L2224/05687 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16058 ,  H01L2224/16112 ,  H01L2224/1613 ,  H01L2224/16145 ,  H01L2224/17505 ,  H01L2224/17517 ,  H01L2224/26145 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32058 ,  H01L2224/32112 ,  H01L2224/3213 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/33505 ,  H01L2224/33517 ,  H01L2224/48247 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/8185 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2924/01014 ,  H01L2924/0476 ,  H01L2924/01074 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

公开(公告)号：EP2606509A4

公开(公告)日：2015-09-16

申请号：EP11819399

申请日：2011-08-16

申请人： BYD CO LTD ,  SHENZHEN BYD AUTO R & D CO LTD

发明人： LIU YINGCE ,  HUO DONGMING ,  SUN TIANBAO

IPC分类号： H01L21/58 ,  H01L33/40

CPC分类号： H01L33/40 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L33/0079 ,  H01L33/641 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05138 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/27472 ,  H01L2224/27622 ,  H01L2224/27831 ,  H01L2224/29011 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/29138 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83345 ,  H01L2224/83805 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/29018 ,  H01L2924/00012 ,  H01L2924/01014 ,  H01L2924/01048 ,  H01L2924/01034

公开(公告)号：EP1199744B1

公开(公告)日：2005-12-28

申请号：EP00122781.8

申请日：2000-10-19

申请人： Agilent Technologies, Inc. (a Delaware corporation)

发明人： Ruby, Richard C. ,  Bell, Tracy E. ,  Geefay, Frank S. ,  Desai, Yogesh M.

IPC分类号： H01L21/50 ,  H01L23/10

CPC分类号： H01L24/05 ,  H01L21/50 ,  H01L23/04 ,  H01L23/10 ,  H01L23/481 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05109 ,  H01L2224/05138 ,  H01L2224/05599 ,  H01L2224/05609 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/48463 ,  H01L2224/85409 ,  H01L2224/85424 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2224/45099 ,  H01L2924/00

公开(公告)号：EP2594928A2

公开(公告)日：2013-05-22

申请号：EP12007744.1

申请日：2012-11-15

申请人： Micronas GmbH

发明人： Wilbertz, Christoph ,  Kolleth, Tobias ,  Frerichs, Heinz-Peter

IPC分类号： G01N27/414

CPC分类号： H01L29/66 ,  G01N27/4143 ,  G01N27/4148 ,  H01L23/3171 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05017 ,  H01L2224/05138 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05578 ,  H01L2224/05582 ,  H01L2224/05638 ,  H01L2224/05684 ,  H01L2224/05686 ,  H01L2224/05687 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16058 ,  H01L2224/16112 ,  H01L2224/1613 ,  H01L2224/16145 ,  H01L2224/17505 ,  H01L2224/17517 ,  H01L2224/26145 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32058 ,  H01L2224/32112 ,  H01L2224/3213 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/33505 ,  H01L2224/33517 ,  H01L2224/48247 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/8185 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2924/01014 ,  H01L2924/0476 ,  H01L2924/01074 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Halbleiter-Gassensor auf der Basis eines integrierten Feldeffekttransistors mit einen Halbleiterkörper mit einer an der Oberfläche des Halbleiterkörpers ausgebildeten Passivierungsschicht, der eine durch einen Spalt von einen Kanalbereich getrennte gassensitive Steuerelektrode aufweist und als Suspended Gate Feldeffekttransistor (SGFET) ausgebildet ist, oder die Steuerelektrode als eine erste Platte eines Kondensators mit Spalt angeordnet ist und eine zweite Platte des Kondensators mit einem Gate des als Capacitve Controlled ausgebildeten Feldeffekttransistors (CCFET) verbunden ist, und die Steuerelektrode eine Halbleiter-Trägerschicht mit einer aufliegenden Haftvermittlerschicht und einer auf der Haftvermittlerschicht aufliegenden gassensitiven Schicht aufweist, und mit einem Referenzpotential verschaltet ist, und die Oberfläche der gassensitiven Schicht dem Kanalbereich oder der zweiten Platte zugewandt ist, und ein Stützgebiet mit einer ersten Tragstruktur mit einem ersten Auflagebereich und einer zweiten Tragstruktur mit einem zweiten Auflagebereich vorgesehen ist, wobei auf der Oberfläche des Halbleiterkörpers ein Anschlussgebiet vorgesehen ist und das Stützgebiet innerhalb des Anschlussgebletes angeordnet ist, und das Anschlussgeblet einen ersten Anschlussberelch und einen zweiten Anschlussbereich aufweist und der erste Anschlussbereich mit der Steuerelektrode mittels eines ersten Verbindungsmittels eine elektrische Verbindung und eine kraftschlüssige Verbindung aufweist und der zweiten Anschlussbereich mit der Steuerelektrode mittels eines zweiten Verbindungsmittels wenigstens eine kraftschlüssige Verbindung aufweist.

摘要翻译： 传感器（10）具有具有钝化层（30）和控制电极（100）的主要部分（20）。 接触区域具有第一接触区域，其具有通过钝化层并且具有导电层的底表面的结构（112）。 第一接触区域经由连接部件（130）与控制电极具有摩擦和电连接。 第二接触区域经由连接部件（140）与控制电极摩擦连接。 连接部件（130）至少部分地填充地层并将电极连接到导电层。

公开(公告)号：EP2304783A1

公开(公告)日：2011-04-06

申请号：EP09755734.2

申请日：2009-05-28

申请人： MVM Technologies, Inc.

发明人： MACKAY, John ,  ROSKOS, Henry

IPC分类号： H01L21/60

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/05138 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/11334 ,  H01L2224/114 ,  H01L2224/1148 ,  H01L2224/116 ,  H01L2224/11901 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13116 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2224/13099

摘要： Methods of producing a solder bump are presented. Preferred methods lack a requirement for photoresist processing or masking a target substrate. Contemplated methods include forming a well around one or more bond pads on a wafer where the walls of the well are formed by a passivation layer material. Contact material can comprise a solder paste or an under bump metallization layer, which can be placed within the wells as a contact bed for solder balls. A priori prepared solder balls, in solid form or in molten form, can deposited on the contact material to produce the solder bump.

公开(公告)号：EP1573811A1

公开(公告)日：2005-09-14

申请号：EP03814225.3

申请日：2003-12-19

申请人： Advanced Analogic Technologies, Inc. ,  Advanced Analogic Technologies (Hong Kong) Limited

发明人： WILLIAMS, Richard ,  CORNELL, Michael ,  CHAN, Wai Tien

IPC分类号： H01L23/62

CPC分类号： H01L23/60 ,  H01L22/32 ,  H01L23/49562 ,  H01L23/62 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0266 ,  H01L29/7802 ,  H01L29/7813 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05138 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48464 ,  H01L2224/49111 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  Y10S257/904 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor die has a bonding pad for a MOSFET such as a power MOSFET and a separate bonding pad for ESD protection circuitry. Connecting the bonding pads together makes the ESD protection circuitry functional to protect the MOSFET. Before connecting the bonding pads together, the ESD protection circuitry and/or the MOSFET can be separately tested. A voltage higher than functioning ESD protection circuitry would permit can be used when testing the MOSFET. A packaging process such as wire bonding or attaching the die to a substrate in a flip-chip package can connect the bonding pads after testing.

摘要翻译： 半导体管芯具有诸如功率MOSFET的MOSFET的接合焊盘和用于ESD保护电路的单独的焊盘。 将焊盘连接在一起可使ESD保护电路起到保护MOSFET的作用。 在将焊盘连接在一起之前，ESD保护电路和/或MOSFET可以单独测试。 当测试MOSFET时，可以使用高于功能ESD保护电路的电压。 诸如引线接合或将芯片附接到倒装芯片封装中的衬底的封装工艺可以在测试之后连接焊盘。