公开(公告)号：EP4428917A1

公开(公告)日：2024-09-11

申请号：EP24162631.6

申请日：2024-03-11

申请人： Advanced Technical Ceramics Company

发明人： FITZSIMMONS, Aaron ,  MINEHAN, William T. ,  CUSHING, David A. ,  JONES, Kera

IPC分类号： H01L23/498 ,  H01L23/15 ,  H01L23/48 ,  H01L23/367

CPC分类号： H01L23/49833 ,  H01L24/32 ,  H01L23/49827 ,  H01L23/15 ,  H01L24/48 ,  H01L23/3677 ,  H01L2224/4809120130101 ,  H01L23/49866 ,  H01L23/24 ,  H01L23/3735 ,  H01L23/055

摘要： The disclosed technology generally relates to metallization of substrates, and more particularly to selective metallization of ceramic substrates without using a magnetic metal such as nickel (Ni). A ceramic package configured to house an electronic device. The ceramic package comprises a ceramic substrate and a non-magnetic metallization stack formed on the ceramic substrate. The non-magnetic metallization stack comprises a base metal layer formed on the ceramic substrate, a palladium (Pd)-based layer formed on the base metal layer, and a gold (Au)-based layer formed on the Pd-based layer. The non-magnetic metallization stack does not include a magnetic metal layer.

公开(公告)号：EP2884534B1

公开(公告)日：2018-10-17

申请号：EP14186235.9

申请日：2014-09-24

申请人： SEMIKRON Elektronik GmbH & Co. KG

发明人： Lemke, Peter

IPC分类号： H01L25/07 ,  H01L23/057 ,  H01L23/10 ,  H01L23/498

CPC分类号： H05K1/181 ,  H01L23/055 ,  H01L23/057 ,  H01L23/10 ,  H01L23/49861 ,  H01L25/072 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1884994B1

公开(公告)日：2018-10-10

申请号：EP07015307.7

申请日：2007-08-03

申请人： SHINKO ELECTRIC INDUSTRIES CO., LTD.

发明人： Murayama, Kei ,  Taguchi, Yuichi ,  Koizumi, Naoyuki ,  Sunohara, Masahiro ,  Shiraishi, Akinori ,  Higashi, Mitsutoshi

IPC分类号： H01L23/498 ,  H01L23/13 ,  H01L23/14 ,  H01L23/055 ,  B81C1/00

CPC分类号： H01L23/055 ,  B81B2207/012 ,  B81C1/0023 ,  H01L23/13 ,  H01L23/147 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/1532 ,  H01L2924/16195 ,  H01L2924/00 ,  H01L2224/0401

摘要： A semiconductor device includes a laminated substrate (104; 204) formed by laminating a plurality of semiconductor substrates (101, 103; 201, 203), a concave part (103B; 208) formed in the laminated substrate, and a semiconductor element (109; 211, 213) mounted in the concave part. A method of manufacturing a semiconductor device includes a first step of forming a laminated substrate by laminating a plurality of semiconductor substrates, a second step of forming a concave part by etching the laminated substrate, and a third step of mounting a semiconductor element in the concave part.

公开(公告)号：EP2688094B1

公开(公告)日：2018-05-23

申请号：EP12758356.5

申请日：2012-02-21

申请人： Omron Corporation

发明人： KANAI, Akinobu ,  ADACHI, Yoshitaka ,  SHIMIZU, Masao ,  TANAKA, Junichi ,  SASAKI, Sho

IPC分类号： H01L23/02 ,  G01F1/684 ,  G01L9/00 ,  H01L23/08 ,  H01L23/12 ,  H01L29/84 ,  G01L19/14 ,  B81B7/00 ,  H01L23/055 ,  H01L23/13 ,  H01L23/00 ,  H01L23/498

CPC分类号： B81B7/0048 ,  G01L19/141 ,  G01L19/145 ,  H01L23/055 ,  H01L23/13 ,  H01L23/49827 ,  H01L23/562 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/15156 ,  H01L2924/1579 ,  H01L2924/16195 ,  H01L2924/00 ,  H01L2924/00014

摘要： In order to easily be able to injection mold a stress-mitigating structure having grooves that are difficult to injection mold, while maintaining a stress-mitigating effect, this sensor package has: a groove (4) formed on the rear surface (2b), on the opposite side of a semiconductor chip (1), so as to encircle a semiconductor sensor chip mounting region (2a); and a cross-linking section (5), which links a resin section on the inside of the groove (4) and a resin section on the outside of the groove (4), formed on the rear surface (2b).

公开(公告)号：EP2189765B1

公开(公告)日：2018-04-11

申请号：EP08167856.7

申请日：2008-10-29

申请人： VEGA Grieshaber KG

发明人： Schultheiss, Daniel ,  Fischer, Michael

IPC分类号： G01S7/03 ,  G01S13/88 ,  H01L23/055 ,  H01L23/552 ,  H01L23/66 ,  H01L23/00 ,  G01F23/284

CPC分类号： G01F23/284 ,  G01S7/032 ,  G01S13/88 ,  H01L23/055 ,  H01L23/552 ,  H01L23/66 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01078 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

公开(公告)号：EP3051582A4

公开(公告)日：2017-05-03

申请号：EP14847934

申请日：2014-09-24

申请人： KYOCERA CORP

发明人： MORI RYUUJI

IPC分类号： H01L23/10 ,  H05K5/00

CPC分类号： H01L23/10 ,  H01L23/055 ,  H01L23/26 ,  H01L2224/48091 ,  H01L2224/48227 ,  H05K5/0095 ,  H05K5/062 ,  H05K7/02 ,  H01L2924/00014

摘要： A lid body (3) according to the invention includes a plate body (5) containing silicon; a protective film (6) disposed on a main surface of the plate body (5), the protective film (6) protecting the plate body (5) from a joining brazing material (10); a frame-like hole (7) passing through the protective film (6), the frame-like hole (7) being provided at an outer periphery of the protective film (6); and a sealing metallic layer (8) made of metal, disposed so as to fill in the hole (7).

摘要翻译： 根据本发明的盖体（3）包括含有硅的板体（5） 设置在所述板体（5）的主表面上的保护膜（6），所述保护膜（6）保护所述板体（5）免受接合硬钎焊材料（10）的影响; 一个穿过保护膜（6）的框状孔（7），框状孔（7）设置在保护膜（6）的外围; 和一个由金属制成的密封金属层（8），其被设置成填充在孔（7）中。

公开(公告)号：EP2983203A1

公开(公告)日：2016-02-10

申请号：EP15183032.0

申请日：2006-03-23

申请人： FUJITSU LIMITED ,  Sumitomo Electric Device Innovations, Inc.

发明人： SHIMURA, Toshihiro ,  OHASHI, Yoji ,  NUNOKAWA, Mitsuji

IPC分类号： H01L23/552 ,  H01L23/66 ,  H01L23/055 ,  H01L23/06

CPC分类号： H01L23/66 ,  H01L23/055 ,  H01L23/06 ,  H01L23/552 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73253 ,  H01L2924/16152 ,  H01L2924/1616 ,  H01L2924/1617 ,  H01L2924/3011

摘要： In a high-frequency circuit module, a resistance film (7a) is formed on a side of a semiconductor circuit chip (6), mounted above a dielectric substrate (1) through a ground metal layer (4), facing the dielectric substrate. A distance from the ground metal layer (2) to the resistance film (7) is a 1/4 wavelength at a predetermined frequency, and the resistance film has a sheet resistance equal to a characteristic impedance of air. A second dielectric substrate (12) with a metal layer (13) formed on a side opposite to the resistance film (7a) can be mounted. When being adhered to the second dielectric substrate (12), the resistance film (7a) has a characteristic impedance determined by a permittivity of a material of the semiconductor circuit chip (6). When it is formed spaced apart from the semiconductor circuit chip, the resistance film has a sheet resistance equal to a characteristic impedance of air. The thickness of the second dielectric substrate is a 1/4 wavelength in a desired frequency.

摘要翻译： 在高频电路模块中，电阻膜（7a）形成在半导体电路芯片（6）的一侧，通过接地金属层（4）安装在电介质基片（1）的上方，面对电介质基片。 距接地金属层（2）至电阻膜（7）的距离为预定频率的1/4波长，电阻膜具有与空气的特性阻抗相等的薄层电阻。 可以安装具有形成在与电阻膜（7a）相对的一侧上的金属层（13）的第二电介质基板（12）。 当粘附到第二电介质基板（12）时，电阻膜（7a）具有由半导体电路芯片（6）的材料的介电常数确定的特性阻抗。 当其形成为与半导体电路芯片间隔开时，电阻膜具有等于空气的特性阻抗的薄层电阻。 第二电介质基板的厚度为期望频率的1/4波长。

公开(公告)号：EP2854173A3

公开(公告)日：2015-04-29

申请号：EP14176899.4

申请日：2014-07-14

申请人： SEMIKRON Elektronik GmbH & Co. KG

发明人： Kulas, Hartmut

IPC分类号： H01L23/473 ,  H01L23/373 ,  H01L21/48 ,  H01L21/58 ,  H01L23/055

CPC分类号： H01L21/4878 ,  H01L21/4882 ,  H01L23/055 ,  H01L23/367 ,  H01L23/3735 ,  H01L23/473 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/32225 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/13055 ,  H01L2924/13091 ,  H05K7/20927 ,  H01L2924/00014 ,  H01L2924/00

摘要： Die Erfindung betrifft eine Leistungshalbleitereinrichtung mit einem Leistungshalbleitermodul und einem Kühlkörper, wobei das Leistungshalbleitermodul eine Kühlplatte aufweist, wobei der Kühlkörper eine Öffnung aufweist, die von einer die Öffnung umlaufenden lateralen ersten Fläche des Kühlkörpers begrenzt wird, wobei die Kühlplatte in der Öffnung angeordnet ist, wobei eine die Kühlplatte umlaufende laterale erste Fläche der Kühlplatte und die erste Fläche des Kühlkörpers einen jeweiligen Winkel zu einer den Leistungshalbleiterbauelementen zugewandten Hauptfläche der Kühlplatte von kleiner als 90° aufweisen, wobei die erste Fläche der Kühlplatte und die erste Fläche des Kühlkörpers, umlaufend entlang der ersten Fläche der Kühlplatte und umlaufend entlang der ersten Fläche des Kühlkörpers, aneinander gepresst angeordnet sind. Weiterhin betrifft die Erfindung ein Verfahren zur Herstellung einer diesbezüglichen Leistungshalbleitereinrichtung. Die Erfindung schafft eine Leistungshalbleitereinrichtung, die eine gute Wärmeleitung von den Leistungshalbleiterbauelementen zu einem von einem Flüssigkeit durchströmbaren Kühlkörper der Leistungshalbleitereinrichtung aufweist und bei der der Kühlkörper langfristig und zuverlässig dicht ist.

公开(公告)号：EP2725610A4

公开(公告)日：2015-02-25

申请号：EP12836375

申请日：2012-09-03

申请人： FUJI ELECTRIC CO LTD

发明人： TAKAMIYA YOSHIKAZU ,  KODAIRA YOSHIHIRO ,  ONISHI KAZUNAGA

IPC分类号： H01L23/48 ,  H01L23/049 ,  H01L23/28 ,  H01L23/498 ,  H01L25/07 ,  H01L25/18

CPC分类号： H01L23/055 ,  H01L21/52 ,  H01L23/049 ,  H01L23/3735 ,  H01L23/49811 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/49 ,  H01L24/73 ,  H01L25/072 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/4911 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00

摘要： A semiconductor device is constituted by a metal base (6), a wiring substrate (2) joined to the metal base (6), a semiconductor chip (1) and a control terminal (5) joined to circuit patterns (2a, 2b) of the wiring substrate (2), and a resin case (20) bonded to the metal base (6). The control terminal (5) is constituted by a through section (5a) passing through a lid (21) of the resin case (20), a linking section (5b) linked to the through section (5a), and a connection section (5c) linked to the linking section (5b). A blocking section (5d) and a cut-out section (5e) are provided in the portion of the control terminal (5) that passes through the lid (21). The blocking section (5d) is in contact with a step (21b) formed on the front surface of the lid (21). When the through section (5a) passes through the lid (21) of the resin case (20), the blocking section (5d) is accommodated inside the cut-out section (5e). The linking section (5b) is in contact with a protrusion (21c) provided on the rear surface of the lid (21).

公开(公告)号：EP2339619B1

公开(公告)日：2015-01-07

申请号：EP10191826.6

申请日：2010-11-19

申请人： SIAE Microelettronica S.p.A.

发明人： Favre, Gaetano ,  Pini, Alberto

IPC分类号： H01L23/66 ,  H01L23/373 ,  H01L23/498

CPC分类号： H01L23/498 ,  H01L23/055 ,  H01L23/3737 ,  H01L23/562 ,  H01L23/66 ,  H01L24/48 ,  H01L2223/6644 ,  H01L2223/6683 ,  H01L2224/32265 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/15311 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207