公开(公告)号：EP0286106A2

公开(公告)日：1988-10-12

申请号：EP88105573.5

申请日：1988-04-07

申请人： HITACHI, LTD.

发明人： Kato, Takahiko ,  Aihara, Katsuzo ,  Kuniya, Jiro ,  Misawa, Yutaka ,  Wadayama, Yoshihide ,  Ogihara, Masahiro ,  Nishino, Toshikazu ,  Kawabe, Ushio ,  Hasegawa, Haruhiro Hitachi Daini Kyoshinryo ,  Takagi, Kazumasa ,  Fukazawa, Tokuumi ,  Miyauchi, Katsuki

IPC分类号： H01L39/24

CPC分类号： H01L39/2464 ,  H01F6/06 ,  H01F41/048 ,  H01L39/143 ,  H01L39/249 ,  H01L39/2496 ,  Y10S505/725 ,  Y10S505/73

摘要： A process for controlling an oxygen content of a non-superconductive or superconductive oxide is provided, in which a beam of particles such as ions, electrons or neutrons or an electromagnetic radiation is applied to the non-superconductive or superconductive oxide of a perovskite type such as YBa₂Cu₃O 7-x , thereby increasing or reducing the oxygen content of the oxide at the sites of oxygen in the crystal lattice of the oxide. Furthermore, a superconductive device such as a superconductive magnet, superconductive power transmission wire, superconductive transformer, superconductive shield, permanent current switch and electronic element is made by utilizing the process for controlling the oxygen concentration of the superconduc­tive oxide.

摘要翻译： 一种用于非超导或超导氧化物的氧含量控制处理提供，其中颗粒的光束：诸如离子，电子或中子或电磁辐射施加于钙钛矿型搜索的非超导性或超导氧化物 如YBa2Cu3O7-X，从而增加或减少已氧化物中的氧的氧化物的晶格位点中的氧含量。 进一步，超导装置，诸如超导磁体，超导输电线，变压器超导，超导屏蔽，永久电流开关和电子元件通过利用用于控制所述超导性氧化物中的氧浓度的方法制备。

公开(公告)号：EP0252206A3

公开(公告)日：1988-08-31

申请号：EP87101113

申请日：1987-01-27

申请人： HITACHI, LTD.

发明人： Homma, Hideo ,  Misawa, Yutaka ,  Momma, Naohiro

IPC分类号： H01L21/82 ,  H01L21/285 ,  H01L21/00

CPC分类号： H01L29/66272 ,  H01L21/0337 ,  H01L21/32137 ,  H01L21/8249 ,  H01L29/41783 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/78

摘要： A method of fabricating a semiconductor device includes the steps of: forming at least one first semi­conductor region (51) of a first conductivity type and at least one second semiconductor region (50) of a second conductivity type in a main surface of a semiconductor layer of the first conductivity type; forming a three-layer film having a desired shape on each of the first and second semiconductor regions, the three-layer film being made up of a bottom layer which is a conductive film (56), an intermediate layer which is a silicon nitride film (57), and a top layer which is a polycrystalline silicon film (58) doped with one of arsenic and phosphorus; forming a first insulating layer (61) on the side wall of the three-layer film; forming a second polycrystalline silicon film (62) on the whole surface, and diffusing one of arsenic and phosphorus from the first polycrystal­line silicon film (58) into the second polycrystalline silicon film (62); selectively etching off the first polycrystalline silicon film (58) and that portion (62A) of the second polycrystalline silicon film, in which one of arsenic and phosphorus has been diffused; forming a second insulating layer (64) at least on the surface of that portion (63A) of the second polycrystalline silicon film which exists on the second semiconductor region (50); removing the silicon nitride film (57) and the conductive film (56) which exist on the second semiconductor region (50), while using the second insulating layer (64) as a mask, to form an aperture and forming a third polycrystalline silicon film (69) so that the aperture (68) is covered by the third polycrystalline silicon film.

公开(公告)号：EP0197531A2

公开(公告)日：1986-10-15

申请号：EP86104695.1

申请日：1986-04-07

申请人： HITACHI, LTD.

发明人： Mimura, Akio ,  Hosokawa, Yoshikazu ,  Suzuki, Takaya ,  Aoyama, Takashi ,  Konishi, Nobutake ,  Misawa, Yutaka ,  Miyata, Kenji

IPC分类号： H01L29/54 ,  H01L29/78 ,  H01L29/52

CPC分类号： H01L29/66757 ,  H01L29/456 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/7866 ,  H01L29/78675

摘要： A thin film transistor formed on an insulating substrate (1, 11) is disclosed in which metal silicide layers (10a, 10b; 15, 16) are formed in a thin film (2, 12) made of a monocrystalline, polycrystalline, or amorphous semiconductor material, to be used as source and drain regions, and further a gate electrode includes a metal silicide layer (10c, 17).

公开(公告)号：EP0626718A1

公开(公告)日：1994-11-30

申请号：EP94112066.9

申请日：1992-09-08

申请人： HITACHI, LTD.

发明人： Oishi, Tomoji ,  Maekawa, Sachiko ,  Kato, Akira ,  Nishizawa, Masahiro ,  Tomita, Yoshifumi ,  Okude, Kojiro ,  Tochigi, Kenji ,  Misawa, Yutaka

IPC分类号： H01J29/89 ,  G02B1/10

CPC分类号： G02B1/11 ,  H01J29/896 ,  H01J2209/012

摘要： The invention describes a display which comprises a film (2) mainly composed of silica which film absorbs a light having a wavelength of 250 nm more intensely than a light having a wavelength of 190 nm. It also describes a display, which comprises a film (2) mainly composed of silica which film does not substantially fluorescent when irradiated by argon gas laser at an output power of 100 mW. The display may be a cathode-ray tube or a liquid crystal display.

摘要翻译： 本发明描述了一种显示器，其包括主要由二氧化硅组成的膜（2），该膜比波长为190nm的光更强烈地吸收波长为250nm的光。 它还描述了一种显示器，其包括主要由二氧化硅构成的膜（2），该膜在以100mW的输出功率照射氩气激光时基本不荧光。 显示器可以是阴极射线管或液晶显示器。

公开(公告)号：EP0256397B1

公开(公告)日：1992-02-19

申请号：EP87111116.7

申请日：1987-07-31

申请人： HITACHI, LTD.

发明人： Homma, Hideo ,  Misawa, Yutaka ,  Momma, Naohiro

IPC分类号： H01L21/74 ,  H01L21/20 ,  H01L21/76 ,  H01L29/72

CPC分类号： H01L21/2007 ,  H01L21/74 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/76281 ,  H01L21/76297 ,  H01L29/7325

公开(公告)号：EP0286106A3

公开(公告)日：1990-03-28

申请号：EP88105573.5

申请日：1988-04-07

申请人： HITACHI, LTD.

发明人： Kato, Takahiko ,  Aihara, Katsuzo ,  Kuniya, Jiro ,  Misawa, Yutaka ,  Wadayama, Yoshihide ,  Ogihara, Masahiro ,  Nishino, Toshikazu ,  Kawabe, Ushio ,  Hasegawa, Haruhiro Hitachi Daini Kyoshinryo ,  Takagi, Kazumasa ,  Fukazawa, Tokuumi ,  Miyauchi, Katsuki

IPC分类号： H01L39/24

CPC分类号： H01L39/2464 ,  H01F6/06 ,  H01F41/048 ,  H01L39/143 ,  H01L39/249 ,  H01L39/2496 ,  Y10S505/725 ,  Y10S505/73

摘要： A process for controlling an oxygen content of a non-superconductive or superconductive oxide is provided, in which a beam of particles such as ions, electrons or neutrons or an electromagnetic radiation is applied to the non-superconductive or superconductive oxide of a perovskite type such as YBa₂Cu₃O 7-x , thereby increasing or reducing the oxygen content of the oxide at the sites of oxygen in the crystal lattice of the oxide. Furthermore, a superconductive device such as a superconductive magnet, superconductive power transmission wire, superconductive transformer, superconductive shield, permanent current switch and electronic element is made by utilizing the process for controlling the oxygen concentration of the superconduc­tive oxide.

公开(公告)号：EP0256397A1

公开(公告)日：1988-02-24

申请号：EP87111116.7

申请日：1987-07-31

申请人： HITACHI, LTD.

发明人： Homma, Hideo ,  Misawa, Yutaka ,  Momma, Naohiro

IPC分类号： H01L21/74 ,  H01L21/20 ,  H01L21/76 ,  H01L29/72

CPC分类号： H01L21/2007 ,  H01L21/74 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/76281 ,  H01L21/76297 ,  H01L29/7325

摘要： A semiconductor device has a structure in which two semiconductor substrates (1, 2) are coupled to each other through a semiconductor oxide film (3) and a metal silicide film (9), and a semiconductor element, for example, a bi-polar transistor is formed in the semicon­ductor substrate (2) on the metal silicide film side, whereby a metal silicide layer (9) having a high melting point is provided beneath one region of the bi-polar transistor for example, an n⁺ buried collector layer (5) and in ohmic contact with the n⁺ buried collector layer. An electrical isolation between the adjacent semiconduc­tor elements is made by an insulating layer (12, 18).

摘要翻译： 半导体器件具有其中两个半导体衬底（1,2）通过半导体氧化膜（3）和金属硅化物膜（9）彼此耦合的结构，以及半导体元件，例如双极性 晶体管形成在金属硅化物膜侧的半导体衬底（2）中，由此例如在双极晶体管的一个区域的下方设置具有高熔点的金属硅化物层（9），n +掩埋 集电极层（5）并与n +掩埋的集电极层欧姆接触。 相邻的半导体元件之间的电绝缘由绝缘层（12,18）制成。

公开(公告)号：EP0082224B1

公开(公告)日：1986-04-16

申请号：EP81306038.1

申请日：1981-12-22

申请人： Hitachi, Ltd.

发明人： Misawa, Yutaka ,  Takahashi, Masaaki ,  Hachino, Hiroaki

IPC分类号： H01L23/28

CPC分类号： H01L23/291 ,  H01L23/3178 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP0111932A3

公开(公告)日：1985-08-28

申请号：EP83112853

申请日：1983-12-20

申请人： HITACHI, LTD.

发明人： Hidaka, Toshiyuki ,  Sakamoto, Hisashi ,  Fukuhara, Toshiaki ,  Fujieda, Sadao ,  Misawa, Yutaka

IPC分类号： H01L21/56 ,  H01L23/30

CPC分类号： H01L21/56 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/3171 ,  H01L2924/0002 ,  Y10T29/49171 ,  H01L2924/00

摘要： The invention relates to resin-molded axial lead-type semiconductor devices comprising a sub-assembly consisting of a semiconductor pellet (1) brazed between a pair of axial leads (5). The sub-assembly is sealed in an epoxy resin, which is formed by applying an epoxy resin, preferably a one-can-epoxy resin, onto the sub-assembly followed by curing the epoxy resin. Preferably, an epoxy resin having a thixotropic index of 1.0 to 2.5 and a gelation time 0.8 to 3 minutes is used. The invention further relates to a process for manufacturing these semiconductor devices which is characterised by:
(A) horizontally holding the sub-assembly and dropping a predetermined amount of an epoxy resin onto the semiconductor pellet while turning the sub-assembly with the axial leads as rotation axis, (B) curing the epoxy resin, preferably by heating at 160° to 180°C for a period of 2 to 10 min, while turning the sub-assembly, so that the surface portions of the epoxy resin are cured, and (C) curing the epoxy resin, preferably by heating at 160° to 200°C for a period of 3 to 24 h while maintaining the sub-assembly stationary without turning it, so that the epoxy resin is completely hardened.

公开(公告)号：EP0084859A2

公开(公告)日：1983-08-03

申请号：EP83100477.5

申请日：1983-01-20

申请人： Hitachi, Ltd.

发明人： Hachino, Hiroaki ,  Misawa, Yutaka ,  Ishizuka, Takeshi

IPC分类号： H01L23/30 ,  H01L23/48

CPC分类号： H01L24/01 ,  H01L23/291 ,  H01L23/3107 ,  H01L23/4924 ,  H01L25/074 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/12036 ,  H01L2924/207 ,  H01L2224/48 ,  H01L2924/0002 ,  H01L2924/00

摘要： An axial-lead glass-molded diode having at least one semiconductor element (3) clamped between a pair of electrode leads (2) by means of a brazing material, and provided with glass (5) covering the periphery thereof by means of molding. Each of the electrode leads comprises an electrode (6) composed of a core material (6a) and a tubular material (6b) and a lead (2) made of a material of the same kind as the core material (6a) and welded thereto. As the core material, a metal excellent in thermal and electrical conductivities, such as copper, is employed, while as the tubular material a metal having a thermal expansion coefficient smaller than that of the core material, such as an invar alloy, is employed, and the core material and the tubular material are metallurgically connected together. The thermal expansion coefficient of the electrode in the longitudinal sectional direction can be regulated by adjusting the thickness of the tubular material with respect to the core material in the crosssectional direction.

摘要翻译： 一种轴向铅玻璃模制二极管，其具有通过钎焊材料夹持在一对电极引线（2）之间的至少一个半导体元件（3），并且通过模制设置有覆盖其周边的玻璃（5）。 每个电极引线包括由芯材料（6a）和管状材料（6b）组成的电极（6）和由与芯材料（6a）相同种类的材料制成的引线（2）并焊接在其上 。 作为芯材，采用铜等导热性优异的金属，作为管状材料，使用热膨胀系数小于芯材的热膨胀系数的金属，例如殷钢合金， 并且芯材料和管状材料冶金连接在一起。 电极在纵向截面方向上的热膨胀系数可以通过调节管状材料相对于核心材料在横截面方向上的厚度来调节。