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公开(公告)号：EP0959541A3
公开(公告)日：2000-11-29
申请号：EP99109970.6
申请日：1999-05-20
发明人： Hayakawa, Toshiro, c/o Fuji Photo Film Co.,Ltd. , Fukunaga, Toshiaki, c/o Fuji Photo Film Co.,Ltd. , Wada, Mitsugu, c/o Fuji Photo Film Co.,Ltd.
IPC分类号： H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/2004 , H01S5/22 , H01S5/2214 , H01S5/2231 , H01S5/3213 , H01S5/32333 , H01S5/3407 , H01S5/343 , H01S5/3434 , H01S5/3436
摘要： A semiconductor laser has an active region which includes at least a quantum well layer and upper and lower optical waveguide layers and is of In x Ga 1-x As y P 1-y (0≦x≦1, 0≦y≦1). Upper and lower AlGaAs cladding layers are formed on opposite sides of the active region. At least one of the optical waveguide layers is not smaller than 0.25µm in thickness, and a part of the upper cladding layer on the upper optical waveguide layer is selectively removed up to the interface of the upper cladding layer and the upper optical waveguide layer.
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公开(公告)号：EP0712181B1
公开(公告)日：2000-10-11
申请号：EP95308104.9
申请日：1995-11-13
CPC分类号： H01L33/105 , H01L33/405 , H01L33/465 , H01S5/0207 , H01S5/0425 , H01S5/18305 , H01S5/18341 , H01S5/18369 , H01S5/2214 , H01S5/423
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23.发明公开Semiconductor light emitting device and method for fabricating the same 失效Lichtemittierende Halbleitervorrichtung und deren Herstellung
公开(公告)号：EP0924824A3
公开(公告)日：2000-03-01
申请号：EP99102776.4
申请日：1996-01-18
发明人： Yokogawa, Toshiya , Yoshii, Shigeo , Sasai, Yoichi
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/0083 , H01L33/0087 , H01L33/105 , H01L33/465 , H01S5/0207 , H01S5/02461 , H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/2063 , H01S5/2081 , H01S5/2211 , H01S5/2214 , H01S5/2231 , H01S5/327 , H01S5/347 , H01S2301/166
摘要： In a II-VI group semiconductor laser, on an n type GaAs substrate, n type ZnSe layer, a multiquantum well layer of a ZnCdSe well layer and a ZnSe barrier layer, and a p type ZnSe layer are deposited in this order. A polycrystalline ZnO layer is provided on both sides of the p type ZnSe layer for constricting current. Multifilm reflecting mirrors, respectively constituted with a polycrystalline SiO 2 layer and a polycrystalline TiO 2 layer, for obtaining laser oscillation are provided on, the p type ZnSe layer as well as on a surface of the n type ZnSe layer exposed by etching the GaAs substrate. Furthermore, a p type AuPd electrode and an n type AuGeNi electrode are respectively provided. Alternatively, on an n type GaAs substrate, an n type ZnSe epitaxial layer, an n type ZnMgSSe cladding layer, an n type ZnSSe optical waveguide layer, a ZnCdSe active layer, a p type ZnSSe optical waveguide layer, a p type ZnMgSSe cladding layer, a p type ZnTe contact layer and a polycrystalline ZnO burying layer are respectively formed. Furthermore, a p type AuPd electrode and an n type In electrode are respectively provided.
摘要翻译： 在II-VI族半导体激光器中，在n型GaAs衬底上，依次沉积n型ZnSe层，ZnCdSe阱层的多量子阱层和ZnSe阻挡层以及p型ZnSe层。 在p型ZnSe层的两侧设置多晶ZnO层，用于收缩电流。 在p型ZnSe层以及通过蚀刻GaAs衬底露出的n型ZnSe层的表面上，设置分别由多晶SiO 2层和多晶TiO 2层构成的用于获得激光振荡的多光反射镜。 此外，分别设置p型AuPd电极和n型AuGeNi电极。 或者，在n型GaAs衬底上，n型ZnSe外延层，n型ZnMgSSe覆层，n型ZnSSe光波导层，ZnCdSe有源层，ap型ZnSSe光波导层，ap型ZnMgSSe覆层，ap 分别形成ZnTe接触层和多晶ZnO掩埋层。 此外，分别设置p型AuPd电极和n型In电极。 一个实施例包括垂直腔半导体激光器。
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公开(公告)号：EP0971465A1
公开(公告)日：2000-01-12
申请号：EP98910983.0
申请日：1998-03-25
发明人： TAKATANI, Kunihiro
IPC分类号： H01S3/18
CPC分类号： B82Y20/00 , H01S5/2211 , H01S5/2214 , H01S5/2218 , H01S5/2231 , H01S5/32341 , H01S5/34333
摘要： A compound semiconductor laser of a III group nitride semiconductor of the present invention includes a first cladding layer 104 of a first conduction type formed on a substrate 101 , an active layer 106 formed on the first cladding layer, a second cladding layer 108 of a second conduction type formed on the active layer 106 , and a buried layer 110 formed on the second cladding layer 108 , the buried layer having an opening portion for constricting a current in a selected region of the active layer, wherein an upper portion of the second cladding layer 108 has a ridge portion, the ridge portion residing in the opening portion of the buried layer 110 , and the buried layer 110 does not substantially absorb light output from the active layer 106 , and the buried layer has a refractive index which is approximately identical with that of the second cladding layer 108 .
摘要翻译： 本发明的III族氮化物半导体的化合物半导体激光器包括形成在基板101上的第一导电类型的第一包覆层104，形成在第一包层上的有源层106，第二包覆层108 形成在有源层106上的导电类型以及形成在第二覆层108上的掩埋层110，该掩埋层具有用于限制有源层的选定区域中的电流的开口部分，其中第二覆层 层108具有脊部，脊部位于掩埋层110的开口部分中，并且掩埋层110基本上不吸收从有源层106输出的光，并且掩埋层具有大致相同的折射率 与第二包层108相同
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25.发明公开SURFACE LIGHT EMITTING LASER AND METHOD OF PRODUCTION THEREOF 有权OBERFLÄCHENEMITTIERENDERLASER UND DESSEN HERSTELLUNGSVERFAHREN
公开(公告)号：EP0944142A1
公开(公告)日：1999-09-22
申请号：EP98945610.8
申请日：1998-10-05
发明人： KANEKO, Takeo
IPC分类号： H01S3/18
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18338 , H01S5/18394 , H01S5/2214 , H01S5/4081 , H01S5/423 , H01S2301/18
摘要： The present invention provides a surface-emitting laser wherein the transverse modes are controlled and phase-synchronized laser beams are emitted from a plurality of light-emitting portions to produce what appears to be a single laser beam, and a method of fabrication thereof. This laser comprises a columnar portion (20) forming part of a reflective mirror on a light-emitting side, an embedding layer (22) surrounding the periphery of the columnar portion (20), an upper electrode (23) formed on the columnar portion (20) and the embedding layer (22), and an insulating layer (18) formed below the columnar portion (20) and the embedding layer (22). A plurality of aperture portions (23a) are formed in the upper electrode (23) above the columnar portion (20), and aperture portions (18a) are formed in the insulation layer (18) at positions corresponding to the aperture portions (23a). The absolute refractive index of the embedding layer (22) is slightly smaller than that of the columnar portion (20), so that the transverse modes are controlled thereby.
摘要翻译： 本发明提供了一种表面发射激光器，其中横模被控制，并且相位同步的激光束从多个发光部分发射以产生看起来是单个激光束，以及其制造方法。 该激光器包括形成在发光侧的反射镜的一部分的柱状部分（20），围绕柱状部分（20）的周围的嵌入层（22），形成在柱状部分上的上部电极（23） （20）和嵌入层（22），以及形成在柱状部（20）和嵌入层（22）的下方的绝缘层（18）。 在柱状部分（20）上方的上部电极（23）中形成多个开口部分（23a），并且在对应于开口部分（23a）的位置处，在绝缘层（18）中形成开口部分（18a） 。 嵌入层（22）的绝对折射率略小于柱状部分（20）的绝对折射率，从而控制横向模式。
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公开(公告)号：EP0723322A2
公开(公告)日：1996-07-24
申请号：EP96100699.6
申请日：1996-01-18
发明人： Yokogawa, Toshiya , Yoshii, Shigeo , Sasai, Yoichi
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/0083 , H01L33/0087 , H01L33/105 , H01L33/465 , H01S5/0207 , H01S5/02461 , H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/2063 , H01S5/2081 , H01S5/2211 , H01S5/2214 , H01S5/2231 , H01S5/327 , H01S5/347 , H01S2301/166
摘要： In a II-VI group semiconductor laser, on an n type GaAs substrate, n type ZnSe layer, a multiquantum well layer of a ZnCdSe well layer and a ZnSe barrier layer, and a p type ZnSe layer are deposited in this order. A polycrystalline ZnO layer is provided on both sides of the p type ZnSe layer for constricting current. Multifilm reflecting mirrors, respectively constituted with a polycrystalline SiO 2 layer and a polycrystalline TiO 2 layer, for obtaining laser oscillation are provided on the p type ZnSe layer as well as on a surface of the n type ZnSe layer exposed by etching the GaAs substrate. Furthermore, a p type AuPd electrode and an n type AuGeNi electrode are respectively provided. Alternatively, on an n type GaAs substrate, an n type ZnSe epitaxial layer, an n type ZnMgSSe cladding layer, an n type ZnSSe optical waveguide layer, a ZnCdSe active layer, a p type ZnSSe optical waveguide layer, a p type ZnMgSSe cladding layer, a p type ZnTe contact layer and a polycrystalline ZnO burying layer are respectively formed. Furthermore, a p type AuPd electrode and an n type In electrode are respectively provided. One embodiment comprises a vertical cavity semiconductor laser.
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公开(公告)号：EP0451843A2
公开(公告)日：1991-10-16
申请号：EP91105789.1
申请日：1991-04-11
CPC分类号： H04B10/2914 , H01S5/028 , H01S5/0282 , H01S5/2214 , H01S5/2231 , H01S5/32308 , H01S5/50
摘要： A semiconductor device includes a substrate, a plurality of semiconductor layers stacked on the substrate and including an active layer having two opposite end faces, a first thin film coated on at least one of the end faces and consisting of a material having a stable composition and a high passivation function, a second thin film coated on the first thin film and having a predetermined refractive index, and electrodes for supplying a current to the active layer. A method of manufacturing the semiconductor device is also disclosed.
摘要翻译： 一种半导体器件，包括：衬底;多个半导体层，堆叠在衬底上并且包括具有两个相对端面的有源层;第一薄膜，涂覆在至少一个端面上并且由具有稳定组成的材料构成;以及 高钝化功能，涂覆在第一薄膜上并具有预定折射率的第二薄膜以及用于向有源层提供电流的电极。 还公开了制造半导体器件的方法。
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公开(公告)号：EP3073587A4
公开(公告)日：2017-07-26
申请号：EP14864863
申请日：2014-11-06
申请人： SONY CORP
发明人： WADA SHINICHI , KURAMOTO MASARU , WATANABE HIDEKI
CPC分类号： H01S5/34333 , H01S5/0287 , H01S5/0425 , H01S5/0602 , H01S5/065 , H01S5/141 , H01S5/2214
摘要： A semiconductor laser element includes a stacked structure body, a second electrode 62, and a first electrode 61; a ridge stripe structure 71 formed of at least part of the stacked structure body is formed; a side structure body 72 formed of the stacked structure body is formed on both sides of the ridge stripe structure 71; the second electrode 62 is separated into a first portion for sending a direct current to the first electrode via a light emitting region and a second portion 62B for applying an electric field to a saturable absorption region; a protection electrode 81 is formed on a portion adjacent to the second portion 62B of the second electrode of at least one side structure body 72; and an insulating layer 56 made of an oxide insulating material is formed to extend from on a portion of the ridge stripe structure 71 to on a portion of the side structure body 72, on which portions neither the second electrode nor the protection electrode 81 is formed.
摘要翻译： 半导体激光元件包括层叠结构体，第二电极62以及第一电极61， 形成由至少一部分叠层结构体形成的脊条结构71; 在脊条形结构71的两侧形成由叠层结构体形成的侧面结构体72， 第二电极62被分成用于经由发光区域向第一电极发送直流电的第一部分和用于向可饱和吸收区域施加电场的第二部分62B; 保护电极81形成在与至少一个侧面结构体72的第二电极的第二部分62B相邻的部分上; 并且由氧化物绝缘材料制成的绝缘层56形成为从脊条形结构71的一部分延伸到侧结构体72的未形成第二电极和保护电极81的部分上的部分 。
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公开(公告)号：EP1436869B1
公开(公告)日：2016-06-01
申请号：EP02776184.0
申请日：2002-10-08
申请人： Infinera Corporation
发明人： Kish, Jr. Fred A. , Joyner, Charles H. , Webjorn, Jonas , Taylor, Robert B. , Nilsson, Alan C. , Welch, David F.
IPC分类号： H04B10/291 , H04B10/50 , H04B10/572 , H04J14/02 , H01S5/34 , B82Y20/00 , G02F1/017 , G02B6/02 , G02B6/12 , G02B6/124 , H01S5/00 , H01S5/024 , H01S5/026 , H01S5/042 , H01S5/06 , H01S5/0625 , H01S5/0683 , H01S5/0687 , H01S5/12 , H01S5/50 , H01S5/22
CPC分类号： G02B6/12033 , B82Y20/00 , G02B6/02204 , G02B6/12004 , G02B6/12007 , G02B6/12019 , G02B6/12023 , G02B6/12026 , G02B6/12028 , G02B6/124 , G02F1/01725 , G02F2001/0175 , G02F2001/01758 , H01S5/0085 , H01S5/024 , H01S5/02415 , H01S5/02453 , H01S5/02461 , H01S5/02476 , H01S5/026 , H01S5/0261 , H01S5/0264 , H01S5/0265 , H01S5/0268 , H01S5/0425 , H01S5/0612 , H01S5/06256 , H01S5/06258 , H01S5/0683 , H01S5/0687 , H01S5/12 , H01S5/1228 , H01S5/2077 , H01S5/22 , H01S5/2214 , H01S5/2224 , H01S5/227 , H01S5/2272 , H01S5/2275 , H01S5/3408 , H01S5/34306 , H01S5/4025 , H01S5/4031 , H01S5/4087 , H01S5/50 , H04B10/2914 , H04B10/50 , H04B10/506 , H04B10/572 , H04J14/02
摘要： An optical transmitter comprises a monolithic transmitter photonic integrated circuit (TxPIC) chip that includes an array of modulated sources formed on the PIC chip and having different operating wavelengths approximating a standardized wavelength grid and providing signal outputs of different wavelengths. A wavelength selective combiner is formed on the PIC chip having a wavelength grid passband response approximating the wavelength grid of the standardized wavelength grid. The signal outputs of the modulated sources optically coupled to inputs of the wavelength selective combiner to produce a combined signal output from the combiner. A first wavelength tuning element coupled to each of the modulated sources and a second wavelength tuning element coupled to the wavelength selective combiner. A wavelength monitoring unit is coupled to the wavelength selective combiner to sample the combined signal output. A wavelength control system coupled to the first and second wavelength tuning elements and to said wavelength monitoring unit to receive the sampled combined signal output. The wavelength control system adjusts the respective wavelengths of operation of the modulated sources to approximate or to be chirped to the standardized wavelength grid and for adjusting the optical combiner wavelength grid passband response to approximate the standardized wavelength grid.
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30.发明公开Hybrid waveguide lasers and methods for fabricating hybrid waveguide lasers 有权Hybride Wellenleiterlaser und Verfahren zum Herstellen von hybriden Wellenleiterlasern
公开(公告)号：EP2866317A1
公开(公告)日：2015-04-29
申请号：EP14174064.7
申请日：2014-06-26
申请人： IMEC , Universiteit Gent
CPC分类号： H01S5/2077 , G02B6/12 , H01S5/0203 , H01S5/021 , H01S5/02236 , H01S5/026 , H01S5/042 , H01S5/2027 , H01S5/2214 , H01S5/2218 , H01S5/2272 , H01S5/3013 , H01S2301/176
摘要： The present invention relates to a method for integrating a sub-micron III-V waveguide laser on a semiconductor photonics platform as well as to a corresponding device/system. The method comprises providing on a semiconductor substrate (1) an electrically insulating layer (2), etching a trench (10) having a width in the range between 50 nm and 800 nm through the electrically insulating layer (2), thereby locally exposing the silicon substrate (1), providing a III-V layer stack in the trench (10) by local epitaxial growth to form a channel waveguide; and providing a light confinement element for confining radiation in the local-epitaxial-grown channel waveguide.
摘要翻译： 本发明涉及一种用于在半导体光子平台以及相应的器件/系统上集成亚微米III-V波导激光器的方法。 该方法包括在半导体衬底（1）上提供电绝缘层（2），通过电绝缘层（2）蚀刻宽度在50nm和800nm之间的沟槽（10），从而局部暴露 硅衬底（1），通过局部外延生长在沟槽（10）中提供III-V层堆叠以形成沟道波导; 以及提供用于将辐射限制在局部外延生长的通道波导中的光限制元件。
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